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WO/2021/215036A1 |
The present invention comprises: a vibration part having a base part having a front end and a rear end facing the front end, and a plurality of vibration arms, fixed ends of which are connected to the front end of the base part and which...
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WO/2021/215463A1 |
In an electronic component, a chip has a functional unit that vibrates, and a terminal, on a first surface. An intermediate member is overlapped onto the first surface. The intermediate member has a first through hole above the functiona...
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WO/2021/215037A1 |
The present invention comprises: a lower lid having a recess; and a resonator mounted on the lower lid, the resonator having a vibration arm which is capable of out-of-plane bending vibration in a space including the recess, and a holdin...
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WO/2021/213040A1 |
A resonance circuit and a filtering device, which relate to the technical field of electronic devices. The resonance circuit (100) comprises: a connection port, wherein the connection port comprises a first port (111) and a second port (...
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WO/2021/215315A1 |
A piezoelectric device (100) comprises: a support substrate (110); an intermediate layer (140) that is positioned in a first region (RG1) on the support substrate (110); a piezoelectric layer (130) that is positioned on the intermediate ...
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WO/2021/213670A1 |
The present disclosure relates to Bulk Acoustic Wave (BAW) devices, in particular to the fabrication of BAW devices. The disclosure provides accordingly a BAW device and a method for fabricating the BAW device, wherein the BAW device has...
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WO/2021/209682A2 |
A silicon microelectromechanical system, MEMS, resonator assembly, comprising four flexural beam elements forming a rectangular frame, each beam element being connected at an end thereof to an end of a neighboring one of the beam element...
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WO/2021/210214A1 |
A piezoelectric vibrator (1) comprises: a piezoelectric vibration element (10); a base member (30); a bonding member (50) of electrically conductive material; and a lid member (40) of electrically conductive material. The base member (30...
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WO/2021/210551A1 |
Provided is an elastic wave device capable of suppressing unwanted waves, such as high-order modes, in a wide band. An elastic wave device 1 according to the present invention is provided with: a silicon substrate 2; a first high acous...
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WO/2021/208925A1 |
A method for improving out-of-band rejection of a piezoelectric filter. The piezoelectric filter has a ladder structure (100), and each step of the ladder structure (100) comprises a series resonator (110) and a parallel resonator (120)....
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WO/2021/210595A1 |
The present invention comprises a single crystal piezoelectric layer (130) in which a first recessed section (132) is formed in a first facing surface (131) facing one main surface (111) of a base part (110). The single crystal piezoelec...
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WO/2021/210596A1 |
The present invention is provided with a base part (110) and a laminated part (120). The base part (110) includes one main surface (111) that is a flat surface, and the other main surface (112) located on the opposite side from the one m...
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WO/2021/203761A1 |
The present invention relates to the technical field of filters, and in particular to a filter, a multiplexer, and a communication device. In the filter, inductive coupling or capacitive coupling is added between different parallel branc...
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WO/2021/205685A1 |
Provided are an assembly substrate and a method for manufacturing an assembly substrate, whereby the alignment precision of a device unit can be increased. The method for manufacturing an assembly substrate 100 comprises: a step S302 i...
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WO/2021/205347A1 |
Systems and methods for packaging an acoustic device (408A) in an integrated circuit (400) include walls formed on a wiring substrate (504). The walls (405) have a height which is just shorter than an expected height of a solder bump (50...
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WO/2021/203732A1 |
Provided are a fingerprint recognition module and a method for forming same. The method for forming the fingerprint recognition module comprises: providing a substrate (100) with a signal processing circuit; forming a discrete sacrificia...
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WO/2021/205987A1 |
An elastic wave device (1) propagates elastic waves in the x-axis direction. The elastic wave device (1) is provided with an elastopiezoelectric substrate (2) and a first electrode finger (4b) that extends in the y-axis direction and tha...
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WO/2021/206050A1 |
A piezoelectric device (100) is provided with: a support substrate (110); an intermediate layer (140) disposed on the support substrate; a piezoelectric layer (130) disposed on the intermediate layer; a functional element (120) disposed ...
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WO/2021/200677A1 |
Provided is an elastic wave device in which intermodulation distortion (IMD) can be effectively suppressed. An elastic wave device 10 of the present invention is provided with a piezoelectric body layer 2, first and second upper electr...
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WO/2021/197500A1 |
The present disclosure relates to a semiconductor device, comprising: a substrate, which is provided with a first side and a second side opposite each other in the thickness direction of the substrate; a first group of resonator units, w...
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WO/2021/196750A1 |
Disclosed are a film piezoelectric acoustic wave filter and a manufacturing method therefor. The manufacturing method for a film piezoelectric acoustic wave filter comprises: providing a first substrate, and forming a piezoelectric stack...
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WO/2021/200280A1 |
An electronic component (100) is provided with a mounting substrate (200), and a first device (101) and a second device (102) each including a function element. The first device (101) is spaced apart from the mounting substrate (200) and...
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WO/2021/200861A1 |
This bonded substrate is obtained by bonding a support substrate containing silicon single crystals and a piezoelectric substrate containing lithium tantalate or lithium niobate single crystals with, interposed therebetween, an amorphous...
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WO/2021/200469A1 |
An IDT electrode (11) is disposed on a piezoelectric substrate (10) and comprises a first busbar electrode (16) and a second busbar electrode (18) which oppose each other, a first electrode finger (17) extending from the first busbar ele...
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WO/2021/196725A1 |
A thin-film piezoelectric acoustic wave filter and a manufacturing method therefor. The manufacturing method comprises: providing a first substrate (100), a plurality of first cavities (120a) isolated from each other being formed on the ...
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WO/2021/200700A1 |
Provided is a multiplexer in which intermodulation distortion (IMD) is reduced and degradation of sensitivity of a reception filter is suppressed. In a multiplexer 1, a first transmission filter 11, a second transmission filter 13, and...
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WO/2021/200835A1 |
Provided is an elastic wave device which can increase a Q value and is less likely to be deteriorated in resonance characteristics even when the size is reduced. The elastic wave device 1 according to the present invention is provided ...
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WO/2021/193167A1 |
Provided are a laminate having sufficient crystal orientation, even in a region in which a piezoelectric layer is of submicron thickness, and a piezoelectric device using the same. The laminate comprises a first wurtzite thin film, a fir...
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WO/2021/189964A1 |
Disclosed in the present invention is a thin film bulk acoustic resonator and a manufacturing method therefor, the thin film bulk acoustic resonator comprising: a first substrate; a support layer bonded on the first substrate, a first em...
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WO/2021/189965A1 |
A film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a bearing substrate, the bearing substrate comprising a first semiconductor layer (100A) and a first device layer (100B); a f...
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WO/2021/193345A1 |
[Problem] To provide a bulk wave resonator having a pass band of high frequencies. [Solution] This bulk wave resonator using bulk waves comprises: a supporting substrate; an acoustic multilayered film in which a plurality of types of die...
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WO/2021/189966A1 |
Disclosed in the present invention is a film bulk acoustic resonator, comprising: a first substrate; a support layer provided on the first substrate, the support layer being internally provided with a first cavity penetrating through the...
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WO/2021/186839A1 |
The present invention makes it possible to reduce a CI value without the need to precisely process a quartz blank. A quartz resonator (1) according to the present invention has an electrode structure which comprises excitation electrod...
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WO/2021/187200A1 |
Provided is an elastic wave device capable of improving linearity and reducing the level of higher harmonics. This elastic wave device is provided with: an IDT electrode that is laminated on a piezoelectric substrate 2 and that constit...
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WO/2021/184863A1 |
A film bulk acoustic resonator and a manufacturing method therefor, a filter, and an electronic device. The manufacturing method comprises: forming an electrode layer (02) and etching the electrode layer (02). The step of etching the ele...
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WO/2021/186790A1 |
This crystal vibration element (10) comprises: a crystal piece (11) that uses as main surfaces (11A, 11B) the surface obtained by rotating by φ degrees with the Z axis as the center, and further rotating by θ degrees with an X' axis as...
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WO/2021/184252A1 |
Provided are a solidly mounted resonator and a manufacturing method thereof The solidly mounted resonator comprises a piezoelectric structure. The piezoelectric structure comprises an upper electrode layer, a lower electrode layer and a ...
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WO/2021/185258A1 |
A method for adjusting the resonant frequency of a filter, a filter, a multiplexer, and a communication device, which are beneficial to better matching of the full passband and the out-of-band of the filter. In the method, the frequency ...
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WO/2021/187537A1 |
Provided is an elastic wave device with which, even when miniaturization has advanced, it is possible to increase a Q value, to reduce spuriousness in an elastic wave resonator, and to suppress spuriousness in filter characteristics. A...
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WO/2021/184138A1 |
A preparation process for a thin film bulk acoustic wave resonator that is provided with a flexible insulating substrate, and an oscillator circuit comprising the thin film bulk acoustic wave resonator that has the flexible substrate. Th...
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WO/2021/187397A1 |
Provided is an elastic wave device that is unlikely to have structural weakness when a cavity is provided in a support substrate. This elastic wave device 1 comprises: a support substrate 2 having a cavity 10; a piezoelectric membrane ...
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WO/2021/180377A1 |
The invention relates to an electrical switch for opening or closing a current path, wherein the electrical switch comprises a contact system having a movable contact and a stationary contact, each of which has a contact piece, wherein, ...
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WO/2021/183149A1 |
A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the tr...
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WO/2021/179728A1 |
Disclosed are a film piezoelectric acoustic resonator, a filter, and an electronic device, comprising: an upper electrode, a piezoelectric layer, and a lower electrode stacked in order from top to bottom; the upper electrode, the piezoel...
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WO/2021/183696A1 |
Improved surface acoustic wave structures (or elements) that can be used to realize any of a wide variety of dispersive or non-dispersive transversal SAW filters that are distinct from prior known means for producing such filters are dis...
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WO/2021/179729A1 |
Provided are a thin-film bulk acoustic wave resonator and a method for manufacture thereof, the thin-film bulk acoustic wave resonator comprising: a carrier substrate (100); a support layer (102), bonded to the carrier substrate (100); t...
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WO/2021/177340A1 |
The present invention reduces Rayleigh mode spurious responses generated in a lower frequency band than an excitation mode used to obtain characteristics, and reduces higher mode spurious responses generated in a higher frequency band th...
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WO/2021/177108A1 |
The present invention reduces the intensity of spurious in the same elastic wave resonator, while maintaining resonance frequency uniformity. An elastic wave resonator (4) is provided with a piezoelectric body (6) and a plurality of elec...
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WO/2021/177341A1 |
The present invention reduces Rayleigh mode spurious responses generated in a lower frequency band than an excitation mode used to obtain characteristics, and reduces a higher mode spurious responses generated in a higher frequency band ...
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WO/2021/177091A1 |
The present invention is a polycrystalline film which is formed of potassium sodium niobate and contains at least one metal element that is selected from the group consisting of Cu and Mn, wherein the ratio of the concentration B of the ...
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