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WO/2021/060523A1 |
Provided is an elastic wave device capable of increasing Q values, even if made more compact, and capable of easily adjusting frequency. The elastic wave device 1 comprises: a piezoelectric layer 2 comprising lithium niobate or lithium...
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WO/2021/062421A1 |
There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the sur...
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WO/2021/060509A1 |
Even when progress is made on miniaturization, the present invention can increase a Q value and reduce size. This elastic wave device further includes a piezoelectric layer (4), a first electrode (51) and a second electrode (52), a first...
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WO/2021/060512A1 |
Provided is an elastic wave device that makes it possible to achieve size reduction but also increase Q value and that also makes it possible to adjust resonant frequency. An elastic wave device (1) that comprises a piezoelectric layer (...
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WO/2021/060444A1 |
This elastic wave filter comprises a first chip and a second chip electrically connected to the first chip. Each of the chips includes a support substrate, a plurality of acoustic films, a piezoelectric film, and an excitation electrode ...
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WO/2021/059581A1 |
A piezoelectric vibrator (1) is provided with: a piezoelectric vibration element (10) that has a piezoelectric piece (11) and a pair of electrodes (14a, 14b) including electrodes facing each other with the piezoelectric piece (11) sandwi...
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WO/2021/059576A1 |
This piezoelectric oscillator (1) comprises: a base (31) having a main surface (31A); a piezoelectric oscillating element (10) mounted to the main surface (31A) of the base (31); a lid member (40) having a recessed section that accommoda...
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WO/2021/060507A1 |
Provided is an elastic wave device with which it is possible to raise the Q-value and increase capacity while reducing the size. The elastic wave device (1) comprises a piezoelectric layer (4), and a first electrode (51) and a second ele...
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WO/2021/060510A1 |
The present invention increases the Q value and maintains strength even when the size of a device is reduced. This electric wave device is provided with a piezoelectric layer (4), a first electrode (51) and a second electrode (52), a fir...
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WO/2021/060150A1 |
Provided is an elastic wave filter that can both suppress transverse mode ripple and improve the steepness of filter characteristics, even when made more compact. The elastic wave filter comprises a plurality of elastic wave resonators...
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WO/2021/060521A1 |
Provided is an elastic wave device that can increase a Q value even when progress is made on miniaturization, and can control the position and size of spurious emissions. This elastic wave device 1 comprises a piezoelectric layer 2 made ...
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WO/2021/059731A1 |
Comprised are first and second excitation electrodes formed on both main surfaces of a piezoelectric substrate, and first and second mounting terminals respectively connected to the first and second excitation electrodes, wherein the fir...
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WO/2021/060508A1 |
An elastic wave device is provided which can increase the Q value even when miniaturization is advanced, and which can improve distortion characteristics. This elastic wave device (1) is provided with a piezoelectric layer (4), and a fir...
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WO/2021/051812A1 |
A bulk acoustic resonator. The bulk acoustic resonator comprises: a substrate (10), acoustic mirrors (21, 22, 23), bottom electrodes (31, 32, 33), top electrodes (61, 62, 63), and a piezoelectric layer (40), wherein an overlapping area o...
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WO/2021/052836A1 |
The SAW filter chip comprises a plurality of SAW filters (1, 2), wherein at least one of the several electric filters is a first-type electric filter (1) comprising at least one first-type SAW-resonator (10). The first-type SAW-resonator...
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WO/2021/051811A1 |
A semiconductor device, comprising: first and second substrates (10, 20), wherein an accommodating space is formed between the first and second substrates; a semiconductor element disposed on the second substrate (20) in the accommodatin...
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WO/2021/053519A1 |
A doubly rotated quartz crystal resonator comprises a cantilever-mounted doubly rotated resonating element having a line of geometrical symmetry running from a supported end to a free end which is not perpendicular to the resonating elem...
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WO/2021/053892A1 |
Provided is a piezoelectric device (100) in which a membrane part (120) is indirectly supported by a base part (110), is located on the upper side relative to the base part (110), and is formed of a plurality of layers (130). The membran...
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WO/2021/054768A1 |
An electronic device according to one embodiment comprises: an antenna; a filter for passing a signal of a specific frequency band among signals transmitted and received through the antenna; and a processor for controlling the filter to ...
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WO/2021/053401A2 |
The invention relates to a transducer structure for a surface acoustic device comprising a composite substrate comprising a piezoelectric layer, a pair of interdigitated comb electrodes, comprising a plurality of electrode means with a p...
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WO/2021/055324A1 |
Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric p...
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WO/2021/053399A2 |
The invention relates to a transducer structure for a surface acoustic device comprising a composite substrate comprising a piezoelectric layer, a pair of interdigitated comb electrodes, comprising a plurality of electrode means with a p...
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WO/2021/055265A1 |
Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group Ill-nitride (III-N) piezoelectric semicond...
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WO/2021/049087A1 |
The present invention enables operations involving energization to be performed in a short time and in a simple manner. A resonance device comprises: a first board including a resonator having an upper electrode; a second board arranged ...
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WO/2021/047362A1 |
Provided are an oscillation apparatus and electronic device, used for an electronic device; the electronic device comprises a fan, and the oscillation apparatus comprises a detection module (10), an oscillation module (20), a variable ca...
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WO/2021/048080A1 |
An acoustic wave filter device (710) is disclosed. The device includes an acoustic wave filter element (100), and a first resonator (702) and a second resonator (712) coupled to the acoustic wave filter element. The acoustic wave filter ...
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WO/2021/049100A1 |
In a piezoelectric element (100), a second electrode layer (130) is located on a second face (112) side of a single crystal piezoelectric layer (110). The second electrode layer (130) has a hole portion (131) that faces a through-hole (1...
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WO/2021/049206A1 |
This elastic wave filter is provided with at least three division resonators (Sa, Sb, Sc, Sd) connected in series to one another. The at least three division resonators (Sa, Sb, Sc, Sd) each have an Inter Digital Transducer (IDT) electro...
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WO/2021/050828A1 |
A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second po...
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WO/2021/050300A1 |
Embodiments disclosed herein include diagnostic substrates and methods of using such substrates. In an embodiment, a diagnostic substrate comprises a substrate, and a device layer over the substrate. In an embodiment, the diagnostic subs...
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WO/2021/044035A1 |
The present invention relates to an acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when the pressure is applied to the substrate such that an area of a first kind of strai...
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WO/2021/045094A1 |
A crystal oscillator (1) comprising: a crystal oscillating element (10) having a pair of electrodes (14a, 14b) including electrodes that are facing each other; and a holder that houses the crystal oscillating element (10). At least one e...
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WO/2021/042342A1 |
A bulk acoustic wave resonance device (200), comprising: a first layer, the first layer comprising a first cavity on a first side; a first electrode layer, located on the first side, a first end of the first electrode layer being in cont...
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WO/2021/042740A1 |
A bulk acoustic wave resonator comprises: a substrate; an acoustic mirror (10); a bottom electrode (11); a top electrode (13); and a piezoelectric layer (12), wherein: an area where the acoustic mirror (10), the bottom electrode (11), th...
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WO/2021/042344A1 |
A bulk acoustic wave resonance device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200), comprising: a first layer, the first layer comprising a cavity (101a, 201a, 301a, 301b, 401a, 502a, 602a, 602b, 702a, 702b, 802a, 902a...
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WO/2021/045031A1 |
An acoustic filter (1) is provided with a series arm resonator (s1 and s2) and a parallel arm resonator (p1 and p2), each formed from an acoustic resonator that has an IDT electrode, wherein: the IDT electrode has a pair of comb-shaped e...
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WO/2021/042343A1 |
A method for forming a bulk acoustic wave resonance device, comprising: (S201) forming a first layer, which comprises: providing a first substrate; forming a piezoelectric layer located on the first substrate; forming a first electrode l...
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WO/2021/042345A1 |
A method for forming a bulk acoustic wave resonance device, comprising: forming a first layer, which comprises: providing a first substrate; forming a piezoelectric layer which is located on the first substrate; forming a first electrode...
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WO/2021/042741A1 |
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer; the region where the acoustic mirror, bottom electrode, piezoelectr...
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WO/2021/042346A1 |
A multiplexed device (300, 600, 700), comprising: at least one first filter device (301, 400, 601, 603, 701, 703) for signal transmission, and at least one second filter device (303, 500, 605, 705, 707) for signal reception, wherein the ...
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WO/2021/044663A1 |
This package structure is provided with: one pair of substrates (20, 30) located facing each other; a joint part (H) for sealing an element (10) in an internal space surrounded by the one pair of substrates (20, 30); an adsorption layer ...
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WO/2021/039495A1 |
A filter device according to the present invention comprises a port, a reference potential part, a filter, a signal line, a first inductor, and a second inductor. The port handles at least one of signal input and signal output. The refer...
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WO/2021/040955A1 |
Embodiments may relate to a radio frequency (RF) front-end module (FEM). The RF FEM may include an integrated die with an active portion and an acoustic wave resonator (AWR) portion adjacent to the active portion. The RF FEM may further ...
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WO/2021/036758A1 |
Provided is a bulk acoustic wave resonator, comprising: a first electrode (10), a piezoelectric layer (20), and a second electrode (30), said piezoelectric layer (20) being arranged between said first electrode (10) and said second elect...
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WO/2021/039038A1 |
Provided is an elastic wave device that can increase power resistance and is unlikely to have electrode damage caused by instantaneous application of power. The elastic wave device 1 comprises a piezoelectric substrate 2 and an IDT ele...
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WO/2021/039639A1 |
Provided is an elastic wave device having an elastic wave resonator and a vertical coupling type elastic wave resonator filter, the elastic wave device being able to more effectively suppress a transverse mode. This elastic wave device...
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WO/2021/041315A1 |
Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extendi...
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WO/2021/031700A1 |
A resonator and a manufacturing method therefor, a filter, and an electronic device. The manufacturing method comprises: providing a wafer-level substrate, comprising a piezoelectric oscillation effective area, an acoustic transducer bei...
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WO/2021/034365A1 |
A resonator that includes a substrate with a cavity that extends in a principal surface thereof and a vibrating resonator above the principal surface of the substrate and including bottom and top electrodes with a piezoelectric layer dis...
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WO/2021/028281A1 |
A micro-acoustic wave device is proposed for application in ultrahigh frequency range. The device uses a thin film piezoelectric material stacked on a carrier substrate. Additionally, a material is embedded between carrier substrate and ...
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