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WO/2021/183696A1 |
Improved surface acoustic wave structures (or elements) that can be used to realize any of a wide variety of dispersive or non-dispersive transversal SAW filters that are distinct from prior known means for producing such filters are dis...
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WO/2021/179729A1 |
Provided are a thin-film bulk acoustic wave resonator and a method for manufacture thereof, the thin-film bulk acoustic wave resonator comprising: a carrier substrate (100); a support layer (102), bonded to the carrier substrate (100); t...
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WO/2021/177340A1 |
The present invention reduces Rayleigh mode spurious responses generated in a lower frequency band than an excitation mode used to obtain characteristics, and reduces higher mode spurious responses generated in a higher frequency band th...
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WO/2021/177108A1 |
The present invention reduces the intensity of spurious in the same elastic wave resonator, while maintaining resonance frequency uniformity. An elastic wave resonator (4) is provided with a piezoelectric body (6) and a plurality of elec...
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WO/2021/177341A1 |
The present invention reduces Rayleigh mode spurious responses generated in a lower frequency band than an excitation mode used to obtain characteristics, and reduces a higher mode spurious responses generated in a higher frequency band ...
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WO/2021/177091A1 |
The present invention is a polycrystalline film which is formed of potassium sodium niobate and contains at least one metal element that is selected from the group consisting of Cu and Mn, wherein the ratio of the concentration B of the ...
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WO/2021/172032A1 |
[Problem] To provide an acoustic wave device that exhibits good characteristics in ultra-high frequency bands of 6 GHz or above using overtones. [Solution] The acoustic wave device comprises a piezoelectric substrate 11, an electrode 12 ...
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WO/2021/172259A1 |
In the present invention, a layered part (120) includes, above at least a recess (113), a single crystal piezoelectric layer (130) and a pair of electrode layers that apply voltage to the single crystal piezoelectric layer (130). A lower...
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WO/2021/169584A1 |
A method for adjusting a filter circuit, and a filter, a multiplexer and a communication device. In the method, the structure of a resonator is adjusted, such that the resonator is equivalent to a series body or a parallel body connected...
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WO/2021/172245A1 |
The present invention provides a high frequency filter which uses a novel piezoelectric material that has a high electromechanical coupling coefficient. A high frequency filter according to one embodiment of the present invention is prov...
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WO/2021/172588A1 |
[Problem] To provide a sensor device with which it is possible to ensure stable oscillation characteristics in a piezoelectric resonance device, and a method for manufacturing the sensor device. [Solution] The sensor device according to ...
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WO/2021/172432A1 |
A piezoelectric element 10 is provided with: a main piezoelectric layer 11 which is a layer of a piezoelectric material; a first electrode 121 and a second electrode 122 sandwiching the main piezoelectric layer 11 therebetween; and a hig...
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WO/2021/166568A1 |
Provided are: a glass composition which does not contain lead that is an environmentally harmful substance and which can seal by low-temperature firing; and a sealing material using the glass composition. A glass composition characterize...
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WO/2021/164733A1 |
A method for transferring a nano-structure, comprising: uniformly spin-coating a target substrate (1) with an interface bonding layer so that the target substrate (1) is in full contact with the interface bonding layer; bringing the targ...
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WO/2021/166875A1 |
Provided is an acoustic wave device in which higher order modes can be suppressed in a wide bandwidth. The acoustic wave device 1 is provided with a base substrate 2, a piezoelectric film 7 and an IDT electrode 8. When the wavelength d...
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WO/2021/159881A1 |
A method for adjusting an FBAR parasitic component, a filter, a multiplexer, and a communication device. A position where a parasitic component appears in a frequency domain is changed, so that the passband performance is improved. In th...
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WO/2021/159677A1 |
Disclosed are a cavity structure of a thin film bulk acoustic resonator and a manufacturing process. The manufacturing process comprises: providing a supporting layer on a substrate provided with a sacrificial material layer so that the ...
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WO/2021/159880A1 |
A piezoelectric acoustic wave filter, comprising a substrate (1) as well as an upper wafer (4) and a lower wafer (5) which are sequentially arranged on the substrate (1) from top to bottom. A metal shielding layer (13, 14) is arranged on...
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WO/2021/159882A1 |
Disclosed are a method for implementing mass loading of a piezoelectric filter (100), a piezoelectric filter (100), a duplexer, a high-frequency front-end circuit and a communication apparatus. In the method, the piezoelectric filter (10...
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WO/2021/157122A1 |
Provided are an oscillator, a temperature compensating circuit, and a crystal vibrating element with which it is possible for the accuracy required of an oscillation frequency to be expanded to a wider temperature range. An oscillator 10...
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WO/2021/157714A1 |
The present invention reduces spurious emissions in a higher order mode which are generated in a band having a higher frequency than that of an excitation mode used to obtain certain properties. This elastic wave device (1) comprises a s...
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WO/2021/153736A1 |
An elastic wave device (100) comprises: a substrate (105) having a piezoelectric layer (110); a first resonator (101) and a second resonator (102) which are arranged atop the substrate; and a shared reflector (REF 12). The second resonat...
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WO/2021/153734A1 |
An elastic wave device (100) comprises a substrate (105), a first resonator (101), a second resonator (102), and a shared reflector (REF 12). The second resonator is arranged to be adjacent to the first resource and has a different frequ...
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WO/2021/153459A1 |
The present invention suppresses the occurrence of an IMD. When a current flowing through a series circuit, which includes an equivalent resistor, an equivalent inductor, and an equivalent capacitor in an electric equivalent circuit of a...
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WO/2021/153458A1 |
The present invention suppresses occurrence of IMD. A multiplexer 1 satisfies a first condition, i.e., |(2∙θ1Tx1 − θ2Tx1) − (2∙θ1Tx2 − θ2Tx2)| = 180° ± 90°, or a second condition, i.e., |(2∙θ2Tx1 – θ1Tx1) − (2∙...
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WO/2021/153491A1 |
In a piezoelectric device (100), connecting parts (130) connect pairs of adjacent beam parts (120) together among a plurality of beam parts (120). The connecting parts (130) connect with one pair of beam parts (120) at a first end. The c...
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WO/2021/147633A1 |
Disclosed are a filter (600), a duplexer, a high-frequency front-end circuit, and a communication apparatus. The filter (600) comprises a plurality of resonators connected in series (S11, S12, S13, S14) and a plurality of resonators conn...
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WO/2021/149471A1 |
Provided is an elastic wave device which can be improved in electric power resistance and can be prevented from the increase in loss. An elastic wave device 1 having an IDT electrode 8 arranged on a piezoelectric layer 6, wherein the I...
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WO/2021/149469A1 |
Provided is an elastic wave device which has a semiconductor support member and is not susceptible to a deterioration of linearity. This elastic wave device 1 comprises: a semiconductor support substrate 2 having a main surface 2a; a p...
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WO/2021/146848A1 |
The present disclosure proposes a method for manufacturing a radio frequency filter. The radio frequency filter comprises: a substrate, a support electrode and a thin film structure; the support electrode protrudes from the front surface...
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WO/2021/149386A1 |
The present invention provides a piezoelectric component which is capable of suppressing deterioration of the polarization due to a pyroelectric effect, while being capable of suppressing increase of the dielectric loss tan δ and exhibi...
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WO/2021/147646A1 |
Disclosed in the present invention are a film piezoelectric acoustic wave filter and a manufacturing method therefor. The film piezoelectric acoustic wave filter comprises: a first substrate; a plurality of acoustic wave resonator units ...
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WO/2021/149332A1 |
Provided is a filter device which can enhance attenuation characteristics. A filter device 1 comprises: a filter circuit 2 having a plurality of serial arm resonators and wiring lines 17 between the plurality of serial arm resonators; ...
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WO/2021/147632A1 |
The present invention provides a topological structure of a quadplexer, comprising a first topological structure and a second topological structure. The first topological structure comprises a first bridge, a second phase shift element, ...
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WO/2021/149501A1 |
The present invention improves both Q values at a resonant frequency, and Q values at an antiresonant frequency. This elastic wave device (1) is provided with a piezoelectric substrate (2) and an IDT electrode (3). In the IDT electrode (...
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WO/2021/149333A1 |
Provided is a filter device capable of increasing an attenuation amount in a band other than a passband. Provide is a filter device 1 in which: a filter circuit 3 having a plurality of series arm resonators S1 to S4 is connected betwee...
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WO/2021/143530A1 |
A bulk acoustic resonator, an ultra-narrow band filter, a duplexer, and a multiplexer. The bulk acoustic resonator comprises a silicon substrate (1), a lower electrode (2) formed on the silicon substrate (1), a silicon dioxide temperatur...
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WO/2021/143518A1 |
Provided in the present invention is a bulk acoustic wave duplex filter, comprising a substrate, a plastic sealing body and a metal cover. A transmitting filter and a receiving filter are arranged on the substrate at intervals; the plast...
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WO/2021/143520A1 |
Disclosed are a filter, a duplexer, a high-frequency front-end circuit, and a communication apparatus. The filter comprises a first series branch located between an input end and an output end of the filter, and a plurality of parallel b...
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WO/2021/143517A1 |
A multi-channel filter, comprising first-part resonators and second-part resonators, wherein the two parts each comprise M resonator groups. The first-part resonators constitute a series part of the filter, the series part comprising 2N ...
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WO/2021/143516A1 |
A bulk acoustic wave filter and a signal processing device, which relate to the field of filters. The bulk acoustic wave filter comprises one series branch and a plurality of parallel branches. The series branch is formed by sequentially...
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WO/2021/143409A1 |
The present invention provides a composite substrate and a manufacturing method therefor, and a surface acoustic wave resonator and a manufacturing method therefor. The manufacturing method for a composite substrate comprises: providing ...
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WO/2021/143519A1 |
A multiplexer, comprising at least two chip sets, wherein each chip set comprises two chips located in the same frequency band, which are a receiving chip and a transmitting chip, respectively; two chips of different frequency bands are ...
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WO/2021/140944A1 |
This piezoelectric resonator device is provided with: a base body which has a first surface; a first connection conductor positioned on the first surface; a MEMS element that is positioned on the first surface and that has a second surfa...
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WO/2020/175234A9 |
This elastic surface wave device (1) comprises: a piezoelectric substrate (20) having main surfaces (20a, 20b); and an IDT electrode (40) disposed on the main surface (20a) among the main surfaces (20a, 20b), the main surface (20a) being...
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WO/2021/140691A1 |
A resonator (10) is provided with: a vibration unit (120) which has two parts (121A, 121B) that vibrate in opposite phases from each other; a holding part (140) which is formed so as to surround at least part of the vibration unit (120);...
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WO/2021/139117A1 |
Disclosed are a composite substrate for manufacturing an acoustic wave resonator, a surface acoustic wave resonator and a manufacturing method. The manufacturing method for the composite substrate comprises: providing a substrate (10), w...
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WO/2021/140809A1 |
The present invention is capable of changing an attenuation pole on the low-frequency side of a pass band of a transmission filter and downsizes a high-frequency module. A high-frequency module (1) is provided with a first transmission f...
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WO/2021/139705A1 |
A crystal oscillation device comprises: a substrate (10) comprising a signal layer (110) and a main ground layer (120); a crystal oscillation circuit (20) provided at the signal layer (110) and comprising a crystal (Y1), a first capacito...
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WO/2021/135021A1 |
Disclosed is a bulk acoustic resonator. The bulk acoustic resonator comprises: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, w...
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