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WO/2021/024564A1 |
This film capacitor (1) comprises: a first dielectric film (10) made of a resin and having a first principal surface (11) and a second principal surface (12); a first electrode layer (30) provided on the first principal surface (11) of t...
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WO/2021/024558A1 |
A film capacitor 1 comprises: a capacitor element 10 having a metallized film 11 in which a metal layer 15 is provided on the surface of a resin film 13; an exterior case 20 that houses the capacitor element 10 therein; and a filling res...
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WO/2021/020557A1 |
Provided is a conductive paste for gravure printing in which separation of a conductive powder and a ceramic powder is extremely suppressed. This conductive paste for gravure printing contains a conductive powder, a ceramic powder, an ad...
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WO/2021/019028A1 |
Electronic component (1), comprising: - a first electrically conductive layer (17) at a first electrical potential - a second electrically conductive layer (18) at a second electrical potential, - a first capacitor (11) having a first te...
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WO/2021/020322A1 |
Provided is a trench capacitor which facilitates the supply of a film formation material into a trench, while ensuring the mechanical strength of wall portions defining the trench. The trench capacitor 1 is provided with a base material ...
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WO/2021/019867A1 |
A chip component (1) is provided with: an electronic component (10) including a first electrode (11) and a second electrode (12) disposed at an interval from the first electrode in a first direction (A); a first bonding portion (21) bond...
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WO/2021/014927A1 |
Provided is a capacitor in which the metal plate does not easily come off the outside of the case when a configuration is adopted in which a metal plate is insert molded to a case. A film capacitor, according to the present invention, co...
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WO/2021/015019A1 |
Provided are a capacitor-forming system and capacitor-forming method for increasing surface area. The capacitor-forming system comprises: a lower electrode-forming device for forming a lower electrode on a substrate; a dielectric film-...
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WO/2021/009386A1 |
A method for manufacturing a metallized film is provided, comprising the steps: a) Deposition of at least one pre-nucleation layer (1) on at least one main surface (2´) of a polymer based substrate (2) by magnetron sputtering, b) Deposi...
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WO/2021/008802A1 |
The present invention concerns a capacitor, comprising a winding element arranged in a case (1), a mounting plate (11) which comprises a non-conductive material and which is fixed to the case (1), and a metal element (7) which is arrange...
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WO/2021/005911A1 |
This circuit element (101) comprises: a laminate (1) formed by lamination of base layers; an internal element provided inside the laminate (1); and first external electrodes (E12, E13, E14) and second external electrodes (E21, E22, E23, ...
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WO/2021/005822A1 |
This film capacitor is provided with a dielectric resin film and a metal layer disposed on one surface of the dielectric resin film. The dielectric resin film has a glass transition temperature of 160°C or higher and a density at 25°C ...
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WO/2021/005928A1 |
The present invention improves the accuracy of adjustment of LC filter characteristics. A first electrode (131) is connected to a first via conductor (V1) between both ends of the first via conductor (V1). A second electrode (132) is con...
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WO/2021/005927A1 |
The present invention facilitates adjustment of the passing characteristic of an LC filter. A first capacitor electrode (121) is connected to one end of a first via conductor (V1), and faces a first ground electrode (111) in a stacking d...
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WO/2021/005823A1 |
The film capacitor according to the present invention is provided with: a dielectric resin film having a first face and a second face facing each other in the thickness direction; and a metal layer disposed on the first face of the diele...
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WO/2020/262013A1 |
A filter unit according to the present invention includes a substrate, capacitors mounted on the substrate, and two inductors. The inductors each include a wire and a core. The core includes two core bodies. The core bodies each have a r...
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WO/2020/255876A1 |
A wiring module 20 mounted to a power storage element group 12 in which a plurality of power storage elements 11 having electrode terminals 13 have been aligned, the wiring module comprising a bus bar 21 that is connected to the electrod...
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WO/2020/253638A1 |
Disclosed is a composite electrode-based solid cell, comprising at least one first composite electrode and at least one second composite electrode. The first composite electrode and the second composite electrode are alternately arranged...
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WO/2020/246322A1 |
Provided is a polypropylene film roll whereby vapor deposition of a metal can be performed with high precision while maintaining high flatness on the polypropylene film unwound from the polypropylene film roll, the resultant capacitor el...
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WO/2020/241145A1 |
Provided is a capacitor wherein overheating does not occur readily during energization. In this invention, a film capacitor comprises capacitor elements, a first bus bar connected to a first end surface electrode from each of the capacit...
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WO/2020/241122A1 |
The surface-modified glass 1 is equipped with a glass 2 and a silicate film 3 provided on the surface of the glass 2. The glass 2 contains at least one polyvalent metal ion, and the silicate film 3 contains a polyvalent metal ion in comm...
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WO/2020/240986A1 |
Provided is a novel dielectric ceramic composition having a high relative permittivity and a high resistivity, wherein the relative permeability is increased under a DC voltage. The dielectric ceramic composition contains an oxide of A, ...
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WO/2020/237543A1 |
The embodiments of the present application provide a capacitor and a preparation method therefor. The capacitor comprises: a first electrode and a second electrode which are respectively used for connecting an external circuit; at least ...
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WO/2020/232693A1 |
The present invention relates to the technical field of electronic encapsulation materials, in particular to a buried capacitive material, a preparation method therefor and a printed circuit board. The capacitive material comprises: two ...
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WO/2020/236044A1 |
The present invention relates to system and arrangements for a MIM capacitor in a monolithic integrated circuit and method for manufacturing the same. The monolithic integrated circuit comprising a substrate (101), an active layer (102) ...
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WO/2020/235175A1 |
The present invention provides a capacitor which comprises a substrate, a lower electrode formed on the substrate, a dielectric film formed on the lower electrode, an upper electrode formed on the dielectric film, a first terminal electr...
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WO/2020/230414A1 |
The present invention provides a capacitor characterized by comprising: a substrate; a lower electrode formed on the substrate; a dielectric film formed on the lower electrode; an upper electrode formed on the dielectric film; a protecti...
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WO/2020/231950A1 |
A system is provided which includes a gas supply; a fluidic circuit which includes first and second sub-circuits, wherein said first sub-circuit includes a first one-way valve, and wherein said second sub-circuit includes a second one-wa...
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WO/2020/224992A1 |
The invention relates to a ceramic component having a ceramic main part (1). The ceramic main part contains a ceramic material as the main constituent, having the following general molecular formula AxByC1-x-vTi1-y+wO3 * (Mn2P2O7)z * Du,...
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WO/2020/222501A1 |
The present invention provides a ceramic substrate and a manufacturing method therefor, the ceramic substrate inhibiting warpage caused by the volume occupied by upper and lower metal layers of a ceramic base substrate, and particularly,...
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WO/2020/221389A1 |
The invention relates to a power electronics system (1) for an electric motor (20) of a motor vehicle drive, comprising a first busbar (2), a second busbar (3) which is electrically insulated relative to the first busbar (2), and at leas...
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WO/2020/217709A1 |
A ceramic electronic component according to the present invention comprises a ceramic body, and a plated electrode provided on a part of the surface of the ceramic body. When a region of the surface of the ceramic body from an edge porti...
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WO/2020/217850A1 |
A first conductive layer (120), a first dielectric layer (125), and second conductive layers (130) are each positioned so as to be along the inner surface (114) of at least one continuous groove (113) and the outer surface (116) of at le...
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WO/2020/219357A1 |
An integrated component may include a multilayer capacitor include a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first active terminatio...
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WO/2020/218218A1 |
An electronic component comprising a main component body and an external electrode provided on the obverse surface of the main component body. The external electrode includes a layer having an alloy of at least one first metal and at lea...
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WO/2020/219359A1 |
A low inductance component may include a multilayer, monolithic device including a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first act...
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WO/2020/219354A1 |
A multilayer ceramic capacitor may include a monolithic body and interleaved first and second pluralities of electrodes extending from the first and second ends, respectively, of the monolithic body towards opposite ends of the monolithi...
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WO/2020/219156A1 |
The present invention is directed towards an electrode comprising a porous electrical current collector comprising a surface comprising a plurality of apertures; a conformal coating present on at least a portion of the surface of the por...
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WO/2020/217930A1 |
A polypropylene film wherein the difference [(Δnyz) – (Δnxz)] between a birefringence value Δnxz and a birefringence value Δnyz is 0.009 or less, the ratio [(tensile modulus TD)/(tensile modulus MD)] of a machine-directional tensil...
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WO/2020/210932A1 |
A capacitor, which is built in a semiconductor chip and comprises two electrode plates. The two electrode plates are respectively distributed on two metal layers in the semiconductor chip. Multiple metal layers are further distributed be...
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WO/2020/211093A1 |
Provided are a capacitor and a manufacturing method therefor, wherein a capacitor with a small volume and a high capacitance density can be prepared. The capacitor comprises: at least one multi-wing structure; a laminated structure, the ...
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WO/2020/211975A1 |
The invention relates to a film capacitor comprising a first and a second film, wherein the two films each have a relative permittivity ε r and each have a metal layer coated or vapour-deposited on at least one side. The invention furth...
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WO/2020/211997A1 |
The present invention relates to a component which has a main body (9) and at least one external electrode (1) which is attached to the main body (9) by a connecting material (4), wherein the main body (9) and the external electrode (1) ...
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WO/2020/210832A1 |
In various embodiments, synthetic bridge molecules are disclosed, usable in molecular electronics sensors. In various aspects, bridge molecules comprise fused ring polycyclic aromatic hydrocarbon structures in the shape of a long and nar...
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WO/2020/210261A1 |
The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a...
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WO/2020/207743A1 |
The invention relates to a ceramic component, comprising a ceramic main body (1) and at least one metallization (2), which is applied to an outer surface (1') of the ceramic main body (1). The metallization (2) contains lithium vanadium ...
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WO/2020/209039A1 |
Provided is a dielectric substance which shows a high dielectric constant in a temperature range from -50°C to 350°C wherein the rate of change in the dielectric constant is 30% or less. An inorganic substance characterized by comprisi...
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WO/2020/210257A1 |
The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a...
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WO/2020/207988A1 |
Three-dimensional capacitive structures (150) may be produced by forming a capacitive stack (153-155) conformally over pores (151) in a region (152a) of porous anodic oxide. The porous anodic oxide region is provided on a stack of electr...
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WO/2020/210254A1 |
The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a capacitor comprises a crystallin...
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