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WO/2013/141184A1 |
Provided is a method for manufacturing an elastic wave filter element having an improved heat dissipation performance. This elastic wave filter element (1) is provided with a transmission-side elastic wave filter chip (11a) and a recepti...
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WO/2013/141168A1 |
Provided is an elastic wave device that is capable of higher sound velocity, and is also resistant to an effect of a response by another mode that is spurious. The elastic wave device (1) comprises a lithium niobate film (5) and uses an ...
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WO/2013/134077A1 |
This disclosure provides implementations of electromechanical systems (EMS) piezoelectric resonator structures, transformers, devices, apparatus, systems, and related processes. In one aspect, a piezoelectric resonator structure includes...
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WO/2013/128823A1 |
Provided is an elastic wave device comprising: a piezoelectric substrate; a comb-shaped electrode that is provided to the upper surface of the piezoelectric substrate; wiring that is connected to the comb-shaped electrode; an element cov...
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WO/2013/129175A1 |
The objective of the present invention is to provide a surface acoustic wave element which is resistant to intrusion of solder or flux into the perimeter of an interdigital transducer at mounting time or after mounting. This surface acou...
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WO/2013/110041A9 |
A device has a resonant structure (106) having a diamond layer coupled to a substrate (102) with a plurality of support tethers (108). A piezoelectric material (104) overlies the resonant structure (106). The device has and input electro...
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WO/2013/125371A1 |
Provided is a method with which a piezoelectric bulk-acoustic wave element exhibiting excellent properties can be produced. A sacrificial layer (21) is formed above one section of a main surface (10a) of a substrate (10). A piezoelectric...
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WO/2013/121689A1 |
The purpose of the present invention is to obtain an electronic part that is not liable to malfunction even when thermal shock is applied thereto repeatedly, such as in a thermal shock test. In this electronic part (1), an electronic par...
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WO/2013/114919A1 |
Provided is a method of manufacturing an electronic part, wherein an intermediate inspection can be executed during manufacturing processes. In a process wherein a plurality of element electrodes (11) and a feeding line (22) are formed o...
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WO/2013/094517A1 |
A boundary acoustic wave device is provided, wherein even if frequency adjustment is performed by etching a first dielectric layer, a first electrode layer is unlikely to break. In this boundary acoustic wave device (6), a first electrod...
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WO/2013/074261A1 |
This disclosure provides implementations of electromechanical systems combined resonator and passive circuit component structures, devices, apparatus, systems, and related processes. In one aspect, the device includes a piezoelectric res...
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WO/2013/068633A2 |
The invention provides systems and methods for producing a chip comprising a radio-frequency filter which is based on MEMS and is arranged inside an integrated circuit. In one aspect, the systems and methods provide a chip which includes...
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WO/2013/068652A1 |
The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter (70) comprising a vibration layer (73) for carrying bulk acoustic waves, electrode means (71, 72, 74) comprising a first electrode (71) coupled to the vibratio...
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WO/2013/064351A1 |
The invention relates to a thermally-compensated resonator (1, 11) comprising a body (5, 15) capable of deformation, the core (8. 18) of the body (5, 15) being made of ceramic. According to the invention, at least a portion of the body (...
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WO/2013/062203A1 |
The present invention relates to a thin film bulk acoustic resonator. The thin film bulk acoustic resonator includes: an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the f...
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WO/2013/050521A1 |
A volume wave piezoelectric and ferroelectric transducer operating at a predetermined frequency f comprises a substrate block (4), having a first thickness e1 and consisting of a first material, and a piezoelectric and ferroelectric tran...
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WO/2013/050533A1 |
A volume wave piezoelectric resonator operating at a predetermined frequency comprises a substrate block (4), a carrier having a plane face (16) and a first thickness e1 and consisting of a first material, a resonant plate (6) having a l...
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WO/2013/031724A1 |
Provided are: a piezoelectric bulk wave device that uses an LiTaO3 thickness shear mode and has little variation in electrical properties caused by variation in electrode film thickness or LiTaO3 thickness; and a production method theref...
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WO/2013/031651A1 |
Provided is an elastic wave device that uses a laminated substrate comprising a plurality of stacked piezoelectric single crystals, and whereby the linear expansion coefficient difference between piezoelectric single crystals as well as ...
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WO/2013/031725A1 |
Provided are: a piezoelectric bulk wave device that uses an LiTaO3 thickness shear mode and has little variation in electrical properties caused by variation in electrode film thickness or LiTaO3 thickness; and a production method theref...
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WO/2013/031617A1 |
The purpose of the present invention is to achieve a method of manufacturing a piezoelectric device wherein a strong junction is stably attained while the type of the device is not limited. In order to achieve this purpose, a hygroscopic...
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WO/2013/031747A1 |
A piezoelectric bulk wave device using a thickness-shear mode of vibration for LiTaO3 and having a high electromechanical coupling coefficient (k2) is obtained. The piezoelectric bulk wave device (1): comprises a piezoelectric thin plate...
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WO/2013/031748A1 |
A piezoelectric bulk wave vibration device that uses a thickness-shear vibration mode for LiTaO3, and whereby a filter or resonator capable of having a higher frequency can be formed using a thick LiTaO3 thin plate. The piezoelectric bul...
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WO/2013/023477A1 |
A crystal oscillator and an oscillation circuit are provided. The oscillation circuit includes a crystal resonator (12) and a resonant unit (11) used to generating resonance; wherein, a terminal of the crystal resonator (12) is connected...
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WO/2013/018604A1 |
This piezoelectric device comprises a piezoelectric thin film, a function electrode, a semiconductor layer, and a support substrate. The function electrode is disposed upon a first primary face side of the piezoelectric thin film and ele...
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WO/2013/018603A1 |
An objective of the present invention is to implement a method of manufacturing an acoustic wave device whereby the type of device is not limited while stably achieving a solid weld in an unheated environment. A metallic layer is formed ...
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WO/2013/014869A1 |
Provided is technology capable of preventing connecting electrodes which are electrically connected to functional elements from stripping away from one main surface of an element substrate. Upon one main surface of an element substrate (...
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WO/2013/012638A1 |
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a se...
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WO/2012/169452A1 |
Provided are an elastic wave device that has excellent reliability and a manufacturing method therefor. An elastic wave device (1) is provided with a piezoelectric substrate (20), and an IDT electrode (10) formed on top of the piezoelect...
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WO/2012/148712A1 |
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode...
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WO/2012/140936A1 |
Provided is an electronic component in which a sealing member is bonded using a resin adhesive that is unlikely to spread before hardening. Also provided is a method for manufacturing the electronic component, wherein the resin adhesive ...
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WO/2012/132147A1 |
Provided is an electronic part capable of suppressing leakage from a hollow portion, and being superior in weathering resistance. An electronic part (1) comprises a frame-like support (4) made of a thermosetting resin and formed on one o...
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WO/2012/127979A1 |
Provided is a manufacturing method for an electronic component module in which collapse of hollow spaces is suppressed. The method is characterized in being provided with: a step for preparing an electronic component (10a) which has an e...
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WO/2012/128268A1 |
In order to improve the power durability of an electrode formed upon a piezoelectric film, a piezoelectric device and manufacturing method for the piezoelectric device are provided which are capable of greatly reducing the concentration ...
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WO/2012/127582A1 |
The present invention has: a cutting step (step S11) for obtaining a pre-pattern-formation chip (10) by cutting a wafer (1); and a polishing step (step S12) for collecting the plurality of obtained chips (10) and barrel polishing the cut...
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WO/2012/124210A1 |
Provided is a method whereby it is possible to produce an elastic wave device exerting excellent frequency-temperature characteristics. An elastic wave device (1) provided with a piezoelectric substrate (10), an IDT electrode (11) formed...
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WO/2012/124648A1 |
Provided are a piezoelectric device and a method for manufacturing the piezoelectric device in which an ultrathin piezoelectric thin film is prevented from being oxidized, and the electrode formed on the piezoelectric thin film is preven...
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WO/2012/120457A1 |
An apparatus comprising: a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, comprising at least one graphene electrode configured to transduce a propagatin...
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WO/2012/117978A1 |
Provided is a method for producing an airtight member, capable of enhancing the adhesiveness of a sealing layer to a high-heat conductive substrate and reliability thereof during airtight sealing between a glass substrate and the high-he...
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WO/2012/115239A1 |
At least one pair of excitation electrodes (291, 292) and at least one pair of lead-out electrodes (293, 294) are formed on a piezoelectric vibrating reed (2), the at least one pair of lead-out electrodes (293, 294) being led out of the ...
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WO/2012/114930A1 |
A smaller size and simpler manufacturing steps are achieved with a tunable filter obtained using a variable capacitor provided with a dielectric film in which the capacitance is varied by applied voltage. The tunable filter (1) is provid...
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WO/2012/110708A1 |
The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element (16) made of semiconductor material comprising n-type doping agent and excitation or sensing m...
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WO/2012/086639A1 |
Provided is an elastic wave device that can be used at high frequencies, and that is capable of increasing the Q value. The elastic wave device (1) comprises a high acoustic velocity film (3) layered on a support substrate (2), wherein t...
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WO/2012/086441A1 |
Provided is an elastic wave device utilizing Lamb waves that enables the production process to be simplified, and that also has excellent mechanical strength, ease of use and improved temperature performance, without requiring the format...
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WO/2012/081328A1 |
Provided is a method by which an electronic component that has a sealing structure can be manufactured easily. In an atmospheric pressure atmosphere, a first sealing member piece (10a) and a second sealing member piece (10b) are bonded w...
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WO/2012/073623A1 |
Provided is a method of manufacturing a piezoelectric element with which it is possible to reliably distinguish a first and second primary face in a mother piezoelectric substrate state from outward appearances. The method of manufacturi...
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WO/2012/073871A1 |
Provided is an elastic wave device that is high sonic-speed, is able to suppress the effects of spurious response from modes other than the mode being used, and uses plate waves. An elastic wave device (1) comprising: a supporting layer ...
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WO/2012/063521A1 |
Provided is an elastic wave device in which the occurrence of migration in a wiring electrode or the like is inhibited. Also provided is a method for manufacturing the elastic wave device. The elastic wave device comprises: a first elect...
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WO/2012/049073A1 |
The invention relates to an acoustic structure comprising a layer of material having a first Young's modulus, called intrinsic modulus, and a first density, called intrinsic density, characterized in that the layer comprises at least a f...
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WO/2012/049374A1 |
The invention describes an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin- film BAW filters (LBAW) one can realize transformation ...
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