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WO/2015/041153A1 |
Provided is an elastic wave device in which a plating film can be reliably formed on a wiring portion connected to an IDT electrode, and in which, even when the plating film is formed by packing an electroconductive material into holes, ...
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WO/2015/025716A1 |
Provided is a piezo-resonator in which the resonance frequency dispersion due to the thickness dispersion of Si is minimized. This piezo-resonator (1) is provided with: single-crystal Si (5); a piezo-electric thin film (8) which consists...
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WO/2015/025618A1 |
Provided are a surface acoustic wave device and a manufacturing method therefor such that separation of feed lines from a piezoelectric substrate during dicing can be suppressed and degradation in airtightness of a sealed space can be su...
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WO/2015/022931A1 |
This elastic wave device (1) comprises a piezoelectric substrate (10), an IDT electrode (11), a wiring line (14), a pad (20), an underbump metal (18), a first dielectric layer (15) and a second dielectric layer (16). At least a part of t...
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WO/2015/012005A1 |
A composite board (10) is obtained by joining a piezoelectric board (12) and a support board (14) together by means of a direct joining using an ion beam. One surface of the piezoelectric board (12) is a polarization minus surface (12a),...
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WO/2015/008351A1 |
Provided are: an electronic component that has superior electromagnetic shielding properties at an electronic component unit body and that effects increased compactness of the electronic component itself; and a method for producing the e...
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WO/2015/005193A1 |
This method for manufacturing a diaphragm-type resonant MEMS device comprises: a lamination step wherein a first silicon oxide film that is formed by thermal oxidation or a process comprising a heat treatment at 900°C or more, a second ...
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WO/2014/188842A1 |
A piezoelectric substrate (22) and a supporting substrate (27) are prepared (step (a)); a composite substrate (20) is obtained by bonding these substrates with an adhesive layer (26) being interposed therebetween (step (b)); and the piez...
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WO/2014/190240A1 |
Various embodiments of an interconnect device and modules and systems that utilize such interconnect device are disclosed. In one or more embodiments, the interconnect device can include a printed circuit board (PCB). The PCB can include...
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WO/2014/188317A1 |
A method for manufacturing microelectromechanical flexural resonators with a deforming element that has an elongate body extending along a spring axis. A deforming element is positioned on the semiconductor wafer with a defined nominal n...
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WO/2014/185331A1 |
An IDT electrode (12) of an elastic wave device (10) is provided with: a first electrode film (26) that is composed of Al or mainly composed of Al; a second electrode film (22) that has a higher density than the first electrode film (26)...
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WO/2014/185599A1 |
An ESD-EMI common mode semiconductor filter element according to the present invention enables a filter circuit and comprises: a substrate; a plurality of TVS zener diode elements formed on top of the substrate; a plurality of PIN diodes...
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WO/2014/185379A1 |
The present invention has, as a main component thereof, an alkali-metal-containing alkali niobate compound having a perovskite crystal structure represented by the general formula AmBO3. Sn is present in some of the A sites. Zr is presen...
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WO/2014/178308A1 |
Provided is a crystal oscillation device in which changes in oscillation frequencies as well as electrical or mechanical connection part breakages, etc., due to impacts from falls or the like can be suppressed without giving rise to incr...
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WO/2014/176770A1 |
A method and apparatus comprising: at least one resonating portion; and at least one attachment portion shaped to engage with at least one fastener.
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WO/2014/166722A1 |
The present invention relates to a method of fabrication of a surface acoustic wave device (20) comprising the step (a) of providing a piezoelectric structure (200), the step (b) of providing a dielectric structure, wherein the step (b) ...
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WO/2014/163729A2 |
Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction,...
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WO/2014/156777A1 |
A hollow electronic device sealing sheet in which the hollow electronic device sealing sheet is immersed in 50 ml of deionized water, and in which at least one from among the chloride ion concentration, sodium ion concentration, phosphat...
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WO/2014/156834A1 |
Provided are a hollow sealing resin sheet which is capable of preparing hollow packages in high yield even if the width of the void in the hollow structure is approximately 100 μm, and a production method for a hollow package. This holl...
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WO/2014/156833A1 |
Provided are a hollow sealing resin sheet which is capable of preparing hollow packages in high yield even if the width of the void in the hollow structure is approximately 100 μm, and a production method for a hollow package. This holl...
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WO/2014/156775A1 |
Provided are a sealing sheet capable of preparing an electronic component package which has excellent flexibility and is highly reliable even if the object to be sealed has a hollow structure, a production method for the sealing sheet, a...
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WO/2014/156015A1 |
An unleaded piezoelectric ceramic composition includes a first crystalline phase comprising a niobate/tantalate alkali-based perovskite oxide having piezoelectric properties, and a second crystalline phase comprising an M-Ti-O spinel com...
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WO/2014/135379A1 |
The invention relates to a microacoustic component (MAC) comprising a cover (CAP) which forms a hermetic seal and having improved acoustic properties, e.g. as a result of the positioning of the cover. The component comprises a functional...
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WO/2014/138059A1 |
A circuit (10) captures the response of a resonant sensor (50) to a target. Sensor (50) includes a resonator (51) characterized by a resonant impedance Z (53) and a resonance state that corresponds to resonator oscillation amplitude and ...
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WO/2014/129433A1 |
A composite substrate (10) is obtained by bonding a semiconductor substrate (12) and an insulating supporting substrate (14) with each other. The supporting substrate (14) is obtained by bonding a first substrate (14a) and a second subst...
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WO/2014/129432A1 |
A composite substrate (10) is obtained by bonding a piezoelectric substrate (12) and a supporting substrate (14), which has a lower thermal expansion coefficient than the piezoelectric substrate (12), with each other. The supporting subs...
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WO/2014/104098A1 |
This method for fabricating a composite substrate comprises: (a) a step of mirror polishing the piezoelectric substrate side of an adhered substrate with a diameter of four or more inches, which is formed by bonding a piezoelectric subst...
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WO/2014/094884A1 |
An improved BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination (L) for a BAW component comprises a first layer (PM1) with a first piezoelectric material and a second...
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WO/2014/094887A1 |
A MEMS component is provided that comprises a first piezoelectric layer with AIN and Sc between the lower electrode and the upper electrode. Thus, a piezoelectric MEMS component with improved piezoelectric properties is obtained.
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WO/2014/094883A1 |
A BAW component and a method for manufacturing a BAW component are provided. The component comprises a bottom electrode, a top electrode and a first piezoelectric material between the bottom electrode and the top electrode, the material ...
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WO/2014/087752A1 |
Provided is a method for manufacturing an elastic wave device whereby short circuit defects and leak defects can be minimized. A plurality of functional element units (11) and a connection line (12) for electrically connecting the plural...
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WO/2014/087799A1 |
Provided is a piezoelectric member having a high sound speed. A piezoelectric member (1a) is provided with a silicon-containing substrate (10), and a piezoelectric layer (11). The piezoelectric layer (11) is disposed on the silicon-conta...
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WO/2014/077212A1 |
In this composite substrate, a piezoelectric substrate that is a single-crystal substrate of lithium tantalate or lithium niobate, and a support substrate that is a single-crystal substrate of silicon are joined together interposed by an...
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WO/2014/071655A1 |
A constant temperature control crystal oscillator and a manufacturing method thereof. The constant temperature control crystal oscillator comprises a constant temperature chamber (11), a heating device (13), a printed circuit board (PCB)...
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WO/2014/058328A1 |
A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with h...
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WO/2014/053575A1 |
The invention relates to a measurement system including a network of nanoelectromechanical system (NEMS) resonators, characterized in that: each one of said resonators includes: an electrostatic activation device capable of generating a ...
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WO/2014/050450A1 |
Provided is an elastic wave device wherein it is possible to inhibit the electromagnetic-coupling between elastic wave element sections. An elastic wave device (1) wherein: a first electrode structure (5) and a second structure (6) are f...
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WO/2014/050307A1 |
Provided is an elastic wave device wherein it is possible to inhibit the electromagnetic-coupling between elastic wave element sections. An elastic wave device (1) wherein: a first electrode structure (3) and a second electrode structure...
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WO/2014/042020A2 |
Provided is an oscillating device which has outstanding frequency temperature characteristics, and which is not susceptible to a deterioration in Q value. Oscillating arms (3a, 3b, 3c) are connected to a support part (2), and oscillati...
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WO/2014/027538A1 |
In this composite substrate (10), a junction surface (21) of a piezoelectric substrate (20) is a partially planarized, asperity surface. This partially planarized, asperity surface has planar portions (25) at the distal ends of a plurali...
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WO/2014/013831A1 |
Provided is a feature in which the profile of a module can be made lower without impairing handleability. A single surface is formed from the upper surface of a branching filter (10) mounted on a mounting surface (2a) of a module substra...
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WO/2014/014058A1 |
Provided is an easily manufactured electronic part. The electronic part (1) is provided with a substrate (10), a function electrode part (11), pad electrode parts (12a, 12b), and an insulating layer (13). The function electrode part (11)...
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WO/2014/006172A1 |
The present invention discloses an oscillator having an adjustable oscillating frequency, as well as a method for producing this oscillator. Said oscillator comprises a nanomechanical resonator (T); a MEMS- based actuator element (A) to ...
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WO/2014/002891A1 |
Provided is a tuning-fork-type crystal oscillator having low variations in resonant frequency resulting from unevenness in fabrication dimensions. In the tuning-fork-type crystal oscillator (1), vibrating arms (4, 5) are contiguous at th...
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WO/2014/001146A1 |
The invention relates to a method for producing a polycrystalline ceramic film on a surface (12) of a substrate (10), in which a particle stream is directed onto the surface (12) and the ceramic film is formed by deposition of the partic...
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WO/2013/172444A1 |
Provided is a simple manufacturing method for a crystal oscillator in which the oscillation characteristics of the crystalline oscillating element are less susceptible to deterioration. A sealed space (15) for sealing a crystalline oscil...
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WO/2013/172443A1 |
Provided is a method for producing an electronic component in which the oscillating properties of an oscillator cannot easily deteriorate. A method for producing an electronic component (1) involves a joining step in which a dome-shaped ...
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WO/2013/172440A1 |
Provided is a method whereby it is possible to easily produce a crystal oscillator having high frequency accuracy. The present invention involves a joining material arranging step for arranging a metallic joining material (15) on one mai...
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WO/2013/161554A1 |
Provided is a crystal oscillation device in which the oscillation properties of a crystal oscillator tend not to decline. A crystal oscillation device (1) is provided with a substrate (10), a cap (11), a joining element (13) and a crysta...
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WO/2013/146374A1 |
Provided is an elastic wave apparatus in which heat dissipation can be effectively increased. This elastic wave apparatus (1) comprises: elastic wave elements (5-7), to each of which is provided an electrode (14) so as to contact a piezo...
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