Title:
化学機械的平坦化のための材料及び方法
Document Type and Number:
Japanese Patent JP2006518940
Kind Code:
A
Abstract:
Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.
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Inventors:
Baliger Paris, Sudhakar
Aldrich, Dale Jay.
Grier, Laura A.
Aldrich, Dale Jay.
Grier, Laura A.
Application Number:
JP2006503725A
Publication Date:
August 17, 2006
Filing Date:
February 19, 2004
Export Citation:
Assignee:
Dow Global Technologies Incorporated
International Classes:
H01L21/304; B24B37/04
Domestic Patent References:
| JP2002079456A | 2002-03-19 | |||
| JP2001127022A | 2001-05-11 | |||
| JP2000117616A | 2000-04-25 | |||
| JP2002313760A | 2002-10-25 | |||
| JP2003051469A | 2003-02-21 | |||
| JP2000164595A | 2000-06-16 | |||
| JP2001522729A | 2001-11-20 |
Foreign References:
| WO2003007360A1 | 2003-01-23 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Masaya Nishiyama
Takashi Ishida
Tetsuji Koga
Masaya Nishiyama