Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6211850
Kind Code:
B2
Abstract:
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided. Oxide semiconductor films are stacked so that the conduction band has a well-shaped structure. A second oxide semiconductor film having a crystalline structure is provided over the first oxide semiconductor film and a third oxide semiconductor film is provided over the second oxide semiconductor film. The bottom of a conduction band in the second oxide semiconductor film is deeper from a vacuum level than the bottom of a conduction band in the first oxide semiconductor film and the bottom of a conduction band in the third oxide semiconductor film.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2013163834A
Publication Date:
October 11, 2017
Filing Date:
August 07, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368
Domestic Patent References:
| JP2012134475A | ||||
| JP2012084851A | ||||
| JP2011138934A | ||||
| JP2011228689A | ||||
| JP2012054547A | ||||
| JP2012134467A | ||||
| JP2012064932A |
Foreign References:
| WO2005021436A1 |