Title:
炭化珪素単結晶製造装置およびそれを用いた炭化珪素単結晶の製造方法
Document Type and Number:
Japanese Patent JP6859800
Kind Code:
B2
Abstract:
To provide an SiC single-crystal manufacturing device that facilitates reuse even if SiC is recrystallized at a bottom part.SOLUTION: A silicon carbide single-crystal manufacturing device comprises: a crucible 1 having a container body 1a and a lid material 1b closing one face as an opening part of the container body 1a; and a heating device 5 which heats a cylindrical outer peripheral wall to heat the crucible 1, the silicon carbide single-crystal manufacturing device being characterized in that the container body 1a is filled with a silicon carbide raw material 4, a silicon carbide single-crystal substrate 2 as a seed crystal is arranged for the lid material 1b, and the crucible 1 is heated by the heating device 5 to sublime the silicon carbide raw material 4 for growth of a silicon carbide single crystal 3 on a surface of the silicon carbide single-crystal substrate 2. The crucible 1 has an underlay member 1c which is arranged on a bottom part of the container body 1a to cover at least a center part of the bottom part, and also configured to be removed from the container body 1a. Even if SiC6 is recrystallized on the lower-part member 1c, it can be recovered together with the lower-part member 1c.SELECTED DRAWING: Figure 1
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Inventors:
Takataka Hidetaka
Youhei Fujikawa
Youhei Fujikawa
Application Number:
JP2017065593A
Publication Date:
April 14, 2021
Filing Date:
March 29, 2017
Export Citation:
Assignee:
株式会社デンソー
昭和電工株式会社
昭和電工株式会社
International Classes:
C30B29/36; C23C14/06; C30B23/08; F27B14/04
Domestic Patent References:
| JP2010076990A | ||||
| JP2016034880A | ||||
| JP2012171832A |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office