Title:
COMPOUND SEMICONDUCTOR WAFER HAVING POLYCRYSTALLINE SiC SUBSTRATE, COMPOUND SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THESE
Document Type and Number:
WIPO Patent Application WO/2007/122669
Kind Code:
A1
Abstract:
A compound semiconductor device which employs a polycrystalline SiC substrate, has the high thermal conductivity of SiC, and has a buffer layer formed on the SiC substrate and having oriented crystal axes; and a process for producing the device. The process for compound semiconductor device production comprises: (a) a step in which a mask pattern having openings disposed in a stripe arrangement defined with parallel opposed sides or of a hexagonal shape having a vertex angle of 120° is formed on a polycrystalline SiC substrate, the surface of the polycrystalline SiC substrate being exposed in the openings; (b) a step in which the growth of a nitride semiconductor is initiated on those parts of the polycrystalline SiC substrate which are exposed in the openings of the mask pattern to embed the mask pattern therewith and deposit a nitride semiconductor buffer layer having a flat surface; and (c) a step in which a GaN compound semiconductor layer is grown on the nitride semiconductor buffer layer.
More Like This:
Inventors:
KIKKAWA TOSHIHIDE (JP)
Application Number:
PCT/JP2006/306508
Publication Date:
November 01, 2007
Filing Date:
March 29, 2006
Export Citation:
Assignee:
FUJITSU LTD (JP)
KIKKAWA TOSHIHIDE (JP)
KIKKAWA TOSHIHIDE (JP)
International Classes:
H01L21/205; H01L21/20; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO1997011518A1 | 1997-03-27 | |||
| WO2004112112A1 | 2004-12-23 | |||
| WO1999023693A1 | 1999-05-14 |
Foreign References:
| JP2002284600A | 2002-10-03 | |||
| JP2002261392A | 2002-09-13 | |||
| JP2005513799A | 2005-05-12 | |||
| JP2005136001A | 2005-05-26 | |||
| JP2002053398A | 2002-02-19 |
Attorney, Agent or Firm:
TAKAHASHI, Keishiro (Okachimachi Tohsei Bldg.,,3-12-1, Taito, Taito-ku, Tokyo 16, JP)
Download PDF: