Title:
EPITAXIAL STRUCTURE AND PREPARATION METHOD THEREFOR, AND LED
Document Type and Number:
WIPO Patent Application WO/2021/062799
Kind Code:
A1
Abstract:
An epitaxial structure and a preparation method therefor, and an LED. The epitaxial structure comprises: a sapphire substrate (1), a GaN layer (2), a defect exposure layer (21) and a defect termination layer (22) provided in sequence. After a buffer layer (2) is prepared on the sapphire substrate (1), a defect in the buffer layer (2) is expanded and exposed by means of the defect exposure layer (21), and the direction of the defect is then changed and the defect is terminated for continuous expansion by means of the defect termination layer (22). Therefore, when a subsequent layer is continuously prepared on the defect termination layer (22), a larger defect cannot be formed on the subsequent layer on the basis of the defect in the buffer layer (2).
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Inventors:
YANG SHUNGUI (CN)
Application Number:
PCT/CN2019/109724
Publication Date:
April 08, 2021
Filing Date:
September 30, 2019
Export Citation:
Assignee:
CHONGQING KONKA PHOTOELECTRIC TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L29/22
Foreign References:
| US6555846B1 | 2003-04-29 | |||
| US6442184B1 | 2002-08-27 | |||
| US20150064881A1 | 2015-03-05 | |||
| JP2000277803A | 2000-10-06 | |||
| CN104900774A | 2015-09-09 | |||
| CN102456777A | 2012-05-16 |
Attorney, Agent or Firm:
JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN) (CN)
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