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WO/2010/069149A1 |
The invention provides a chemical-mechanical polishing liquid. It contains star polymer with a pigment-affinity group, abrasive particles, chelant，oxidant and water. The polishing liquid can reduce the dishing of a polished copper bloc...
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WO/2010/070354A1 |
A clean-up fluid for cleaning fluid-carrying apparatus is described. The clean-up fluid comprises a liquid, typically water, and sufficient particles in admixture therewith to initiate a cleaning action in use within a fluid-carrying app...
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WO/2010/063165A1 |
The invention discloses a chemical-mechanical polishing liquid which can remove dielectric material. The polishing liquid contains dimeric dumbbell-like and/or polymeric chain-like colloid silica abrasive particles having regular shape. ...
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WO/2010/041223A1 |
The invention relates to molten grains having the following chemical composition in wt % in terms of oxides: Al2O3: balance to 100%; Zr02+Hf02: 16-24%; MgO in an amount such that the weight ratio (ZrO2+ HfO2)/MgO is between 25 and 65; ot...
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WO/2010/040280A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising abrasive particles, hydrogen peroxide，persulfate and water. The pH value of the liquid is 9 ~12. The chemical-mechanical polishing liquid according to th...
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WO/2010/037265A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising abrasive particles, oxidant and water. The liquid further comprises at least one inorganic salt for improving the removal rate of silicon dioxide, and at l...
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WO/2010/037264A1 |
A chemical-mechanical polishing slurry is provided, which comprises abrasive particles and one or more organic salts selected from the group of aliphatic amine hydrochloride, aliphatic amine sulfate, amide hydrochloride, amide sulfate, a...
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WO/2010/034181A1 |
The present invention discloses the use of an amine compound as shown by formula 1 for preparing a polishing liquid used to polish oxide dielectric materials, in which R1, R2 and R3 are hydrogen, (CH2)nCOOR4 or (CH2)nCONH2 respectively, ...
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WO/2010/025623A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising colloidal silicon dioxide particles, organic carboxylic acid and/or organic phosphonic acid, potassium nitrate and water. To satisfy the demand of a chemic...
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WO/2010/020466A1 |
The invention relates to a suspension of cerium oxide particles, of which the particles (secondary particles) have an average size of at most 200 nm, these secondary particles consisting of primary particles whose average size measured b...
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WO/2010/017693A1 |
The present invention discloses a polishing liquid for chemical-mechanical abrading comprising water, abrasive particles and oxidant, wherein the oxidant comprises nitrate and metal salt at the same time. The cation of the nitrate is met...
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WO/2010/012159A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising collosol-type silicon dioxide, a rate accelerator, a surfactant and water. The present invention overcomes the disadvantages that the content of the abrasi...
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WO/2010/009304A2 |
A glaze composition for application to a substrate includes a dry powder latex, a liquid latex emulsion, a coalescing solvent, a wax, a thickener and water The glaze is rewettable during application and is extremely durable after fully d...
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WO/2009/153853A1 |
[PROBLEMS] To provide a coating composition which meets a desire in the market to maintain or recover the beauty of a coating surface through a simpler maintenance operation, and which can be efficiently applied to a coating surface and ...
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WO/2009/133282A2 |
The invention relates to a liquid perfumed patina for covering surfaces, characterised in that the patina comprises a mixture containing: a vegetable oil; a natural plant or fruit essence particular in that it is perfumed; a cereal alcoh...
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WO/2009/122921A1 |
Disclosed is an emulsion composition for floor polishing that, even though a film forming assistant is not substantially contained, has excellent film forming properties at a low temperature and, at the same time, can form a film having ...
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WO/2009/110729A1 |
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing ab...
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WO/2009/107986A1 |
The present invention relates to an aqueous slurry composition for chemical mechanical polishing that can show good polishing rate to the target layer, and yet has a high polishing selectivity and can maintain superior surface condition ...
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WO/2009/102615A2 |
A particulate material comprising cerium oxide particles having a secondary particle size distribution in a range of 80 nm to 199 nm and a density of at least 6.6 g/cm3.
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WO/2009/097937A1 |
Process for polishing silicon surfaces, in which a dispersion which comprises cerium oxide particles, at least one polymeric, anionic dispersing additive and at least one oxidizing agent and which has a pH of 7 to 10.5 is used, said ceri...
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WO/2009/097737A1 |
A chemical mechanical polishing liquid which contains abrasive particles and water. The said polishing liquid further contains biguanides and azoles. The coexistence of biguanides and azoles produces synergistic effect and results in a s...
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WO/2009/097938A1 |
Dispersion which contains cerium oxide particles and one or more polymeric, anionic dispersing additives, which are soluble in the liquid phase of the dispersion, and which has a pH in the range from 6 to 8, wherein the cerium oxide part...
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WO/2009/077412A2 |
The present invention pertains to an aqueous slurry comprising inorganic oxygen-containing particulates having an average particle size below 165 nm, wherein the slurry comprises inorganic oxygen-containing particulates which have been m...
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WO/2009/070967A1 |
A chemical-mechanical polishing liquid is disclosed, which comprises water, silica doped by metal and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine salts and the derivatives there...
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WO/2009/071351A1 |
A method for chemically-mechanically polishing patterned surfaces composed of patterned metallic and nonmetallic regions comprising the steps of: (1) selecting an aqueous chemical mechanical polishing composition comprising, based on the...
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WO/2009/070969A1 |
A chemical-mechanical polishing liquid for polysilicon is disclosed, which contains abrasive particles, water and at least one compound having more than two group of [-C(NH)-NH-]. The polishing liquid can improve the removal rate of poly...
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WO/2009/070968A1 |
A chemical-mechanical polishing liquid is disclosed, which comprises silica doped by aluminum, mixed corrosive inhibitors, water and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine ...
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WO/2009/066141A1 |
To provide an agent for the treatment of a top¬ coat paint film to impart stain resistance with which a stain resisting function can be imparted easily to a top-coat paint film which is the outermost paint film irrespective of the type ...
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WO/2009/064010A1 |
The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic a...
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WO/2009/058274A1 |
A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxida...
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WO/2009/056491A1 |
A CMP slurry composition for planarizing surfaces comprising copper and a diffusion barrier layer comprising: an abrasive, an oxidizer, a corrosion inhibitor, amonomeric polyhydroxy compound, a base, the slurry composition having a pH of...
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WO/2009/058463A1 |
A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution...
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WO/2009/045399A1 |
An easily spreadable furniture polish composition that provides dusting benefits and imparts shine with minimal residue to a surface to be treated. The furniture polish composition includes a film former, an aqueous carrier, an anionic a...
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WO/2009/046311A2 |
Improved slurry compositions comprising silicon carbide particles and alumina particles dispersed within an aqueous medium. Slurry compositions in the form of abrasive slurry compositions for use chemcial mechanical planarization (CMP) p...
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WO/2009/042073A2 |
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
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WO/2009/040597A1 |
The invention relates to a liquid cleaning composition for hard surfaces comprising: - a carrier, at least some of which is aqueous; - one or more surfactants; - solid inorganic microparticles having a particle size of from 0.5 to 5 μm,...
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WO/2009/021364A1 |
The present invention provides a method of controlling scratching of the polished surfaces of silicon wafers, which comprises adhering silicon wafers onto the polishing discs of a polisher, then holding the polishing discs onto the polis...
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WO/2009/021363A1 |
The present invention provides a nano silicon dioxide abradant polishing liquid for processing microcrystal glass, which contains abradant I, abradant II, surfactant, pH regulator and deionized water; and the weight percentages of the co...
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WO/2009/020625A1 |
A water-soluble polymer is effective as a removal rate enhancer in a chemical mechanical polishing slurry to polish copper on semiconductor wafers or other copper laid structures, while keeping the etching rate low. The slurry may also i...
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WO/2009/017734A1 |
A chemical mechanical polishing slurry containing multiple oxidizers and nano abrasive particles (including engineered nano diamond particles) suitable for polishing multilayer substrate with tungsten and Ti/TiN barrier layers. The slurr...
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WO/2009/017404A1 |
Described is a polish product, and particularly to a shoe or leather care product, in the form of a paste. The product is essentially free of volatile components (organic components as well as water). It comprises a wax component in an a...
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WO/2009/017652A2 |
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change material (PCM), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises a...
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WO/2009/010626A1 |
The invention relates to a ski wax composition to be arranged on the base of a ski. According to the invention, the ski wax composition contains substantially two components, wherein component A contains an aqueous dispersion and plastic...
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WO/2009/006784A1 |
The invention discloses a modified silicon dioxide sol, manufacturing method and use of the same, and a polishing liquid containing the same. The surface of the silicon dioxide of the modified silicon dioxide sol is bonded with epoxy-gro...
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WO/2008/147796A1 |
Aqueous compositions comprising surfactant represented by a formula selected from the group consisting of: [Rf-(O)t-CHF-(CF2)n-COO-]i Xi+; {[Rf-(O)t-CQH-CF2-O]m-R-COO- }i Xi+; {[Rf-(O)t-CQH-CF2-O]m-R-SO3 -)i, Xi+; and [CF3CFH-O-(CF2)p-CO...
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WO/2008/145482A1 |
A dispersion comprising particles of cerium oxide and colloidal silicon dioxide and in each case one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of the silicon dioxide particles is negative and that of th...
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WO/2008/145480A1 |
A dispersion comprising particles of cerium oxide and sheet silicate and one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of sheet silicate particles is negative and that of the cerium oxide particles is p...
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WO/2008/142093A1 |
The present invention relates to compositions for chemical-mechanical polishing comprising A 0.01 % to 40 % by weight based on the total amount of the composition of abrasive particles of at least one porous metal-organic framework mater...
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WO/2008/122204A1 |
The present invention provides a chemical mechanical polishing liquid for polycrystalline silicon, which contains polyol-type nonionic surfactant, guanidines compound, abrasive particles and water. The polishing liquid of the invention c...
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WO/2008/109270A1 |
The invention relates to an abrasive fluid formulation containing organic polymeric particles. The formulation is useful in cleaning and polishing metals, plastic, glass, skin, ceramics and other materials. The polymer particles can be r...
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