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WO/2017/171890A1 |
In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for reducing Optical Proximity Correction (OPC) model error via a machine learning algorithm. For instance, in accordance with one embodiment,...
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WO/2017/169635A1 |
A substrate processing device (1) comprises: a substrate holding and rotating mechanism (41) which holds a substrate (W) in horizontal attitude and causes the substrate (W) to rotate about a vertical rotating axis (AX) passing through a ...
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WO/2017/161644A1 |
Disclosed is a mask plate (4), comprising a plurality of baffles (5), a frame body (6) and a light-transmitting region (7). The frame body (6) is provided with supporting components (8) and moving components (9). The baffles (5) are conf...
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WO/2017/156842A1 |
Disclosed are a system for generating mask patterns, a method for generating mask patterns and an exposure system, wherein the system for generating mask patterns comprises mask pattern providing equipment (101), mask pattern transmittin...
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WO/2016/112050A9 |
A method of fabricating a multi-tone amplitude photomask (50) includes providing a mask substrate (24). The method includes providing a stepped pattern in at least one layer (20a, 20b) of material on a surface of the mask substrate. The ...
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WO/2017/156388A1 |
High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns g...
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WO/2017/153152A1 |
A reflector for EUV radiation, the reflector comprising a reflector substrate and a reflective surface, the reflector substrate having a plurality of coolant channels formed therein, the coolant channels being substantially straight, sub...
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WO/2017/155872A1 |
A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape, feature location, and dimension along a first direction within a substrate plane; depositing a layer comprising a layer mate...
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WO/2017/153085A1 |
A measurement system to determine a deformation of an object having a front surface and a back surface and being provided with a pattern is described, the measurement system comprising: ∙ a processor and ∙ an interferometer system co...
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WO/2017/148350A1 |
Provided are a pattern structure and an exposure method of a patterned sapphire substrate mask. The pattern structure is formed by joining a plurality of identical polygons. Each polygon has at least two fan-shaped non-optically transmis...
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WO/2017/151383A1 |
Methods and systems for selective silicon anti-reflective coating (SiARC) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a SiARC layer, a pa...
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WO/2017/144252A1 |
The present invention discloses methods and a system for scanning scattering contrast inspection for the identification of defects (4) in an actual pattern block (6) on a sample (2) as compared to the desired pattern block on the sample ...
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WO/2017/143662A1 |
A mask, a mask exposure method, a mask system, and a pattern control device. The mask is provided with a pattern control layer (100) and a light conversion layer (200). The pattern control layer (100) comprises multiple transparent units...
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WO/2017/141605A1 |
Provided is a mask blank (100) for manufacturing a phase-shift mask wherein a high-precision and fine pattern can be formed on a light-shielding film (3). The mask blank (100) is provided with the light-shielding film (3) comprising a ma...
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WO/2017/140030A1 |
Provided are a curing method, a method for manufacturing a display panel, a display panel, and a mask. The curing method comprises: providing a curable material; providing a mask; and providing an incident beam at the mask side to cure t...
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WO/2017/140052A1 |
Provided are a mask plate cover (10) and a mask plate. The mask plate cover (10) comprises a support (11) and at least one adjusting unit (12). Each adjusting unit (12) comprises a baffle plate (121) and a drive assembly (122). The suppo...
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WO/2017/140083A1 |
An optimization method for thickness uniformity of an alignment film (600). The optimization method comprises the following steps: providing a thin film transistor array substrate (2) deposited with a passivation layer (100); coating the...
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WO/2017/142141A1 |
The present invention relates to a method for manufacturing a pellicle for lithography used as a dust protective film when manufacturing a semiconductor device or a liquid crystal display or the like and, more particularly, to a method f...
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WO/2017/131358A1 |
Provided is a method for manufacturing an extreme ultraviolet (EUV) pellicle structure, comprising the steps of: preparing a pellicle membrane comprising an intermediate layer structure in which a plurality of EUV transmission layers and...
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WO/2017/132331A1 |
A system for removing debris from a surface of a substrate, the system including a cantilever arm and a tip supported by the cantilever arm. The tip has a proximal portion and a distal portion such that the tip is supported by the cantil...
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WO/2017/127233A1 |
Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable...
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WO/2017/126215A1 |
The present invention is a device for measuring the phase shift amount of a phase shift mask 15, said device being provided with: a diffraction grating 7 for diffracting linearly polarized light and generating a plurality of diffracted l...
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WO/2017/125362A1 |
In order also to facilitate high reflectivities over relatively large angle-of-incidence ranges or wavelength ranges, a reflective optical element for the extreme ultraviolet wavelength range is proposed, said reflective optical element ...
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WO/2017/121157A1 |
A mask plate and a manufacturing method therefor, and the use thereof in a manufacturing process of a display substrate. The mask plate comprises: a transparent substrate (00), and at least two layers of electrochromic film patterns (10)...
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WO/2017/122975A1 |
There may be provided a method for manufacturing an EUV pellicle structure, the method comprising the steps of: preparing a pellicle membrane having a plurality of extreme ultraviolet (EUV) transmitting layers and heat-radiating layers l...
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WO/2017/123464A1 |
Metrology overlay targets are provided, as well as method of monitoring process shortcomings. Targets comprise periodic structures, at least one of which comprising repeating asymmetric elements along a corresponding segmentation directi...
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WO/2017/120373A1 |
An electron beam apparatus addresses blanking issues resulting from sinking high-power heat onto an aperture diaphragm by evenly spreading heat on the aperture diaphragm. The apparatus can include an aperture diaphragm and a deflector th...
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WO/2017/114725A1 |
Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include ...
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WO/2017/102383A1 |
Methods of manufacturing a membrane assembly are disclosed. In one arrangement, a stack comprises a planar substrate and at least one membrane layer. The planar substrate comprises an inner region, a border region around the inner region...
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WO/2017/102380A1 |
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to ...
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WO/2017/102379A1 |
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element se...
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WO/2017/102378A1 |
A membrane assembly (80) for EUV lithography, the membrane assembly comprising: a planar membrane (40); a border (81) configured to hold the membrane; and a frame assembly (50) connected to the border and configured to attach to a patter...
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WO/2017/102321A1 |
A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a ...
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WO/2017/102256A1 |
The invention relates to a reflective optical element particularly for a microlithographic projection exposure system or for a mask inspection system. According to one aspect of the invention, the reflective optical element comprises an ...
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WO/2017/100307A1 |
The present disclosure relates to semiconductor manufacturing, in particular to reticle rack systems. The teachings of the present disclosure may be embodied in a reticle rack unit including a frame with four uprights and multiple crossb...
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WO/2017/092957A1 |
A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders ...
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WO/2017/095811A1 |
A method for optimizing a multi die implementation flow that is aware of mix-and-match die integration for implementing multi-die integrated circuits includes partitioning a netlist into partitions comprehending mix-and-match die integra...
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WO/2017/091738A1 |
A method of fabricating a visible spectrum optical component includes: providing a substrate; forming a resist layer over a surface of the substrate; patterning the resist layer to form a patterned resist layer defining openings exposing...
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WO/2017/090485A1 |
Provided is a reflective mask that is capable of reducing out-of-band light when a predetermined pattern is transferred onto a wafer with exposure light using EUV light in a process for manufacturing a semiconductor device. This substrat...
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WO/2017/091339A1 |
Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decompositi...
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WO/2017/087252A1 |
Apparatus for cleaning a photo mask includes a rotor in a head, with the rotor having a seal plate having a central opening, a resilient mask seal in the central opening, and retractors attached to the resilient mask seal and adapted to ...
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WO/2017/087653A2 |
Methods and systems for generating simulated images from design information are provided. One system includes one or more computer subsystems and one or more components executed by the computer subsystem(s), which include a generative mo...
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WO/2017/087410A2 |
Provided is a method of plasma etching on a substrate using an etchant gas mixture to meet integration objectives, the method comprising: disposing a substrate having a structure pattern layer, a neutral layer, and an underlying layer, t...
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WO/2017/087066A1 |
Techniques disclosed herein provide a method and fabrication structure for pitch reduction for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having...
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WO/2017/087138A1 |
Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxi...
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WO/2017/086196A1 |
Provided is a mask blank having a resist layer and capable of suppressing charging-up during irradiation with electron beams. A mask blank (10) having a resist layer is provided with: a substrate (11) having a thin film (12); a resist la...
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WO/2017/076686A1 |
A method for manufacturing a membrane assembly (80) for EUV lithography, the method comprising: providing a stack (40) comprising a membrane layer (45) between a supporting substrate (41) and an attachment substrate (51), wherein the sup...
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WO/2017/077915A1 |
Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling the formation of a high-precision and fine pattern in a light-blocking film. The mask blank (100) in which a phase shift film (2) formed from a ...
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WO/2017/076694A1 |
A multilayer reflector for use in EUV lithography, for example, comprises alternating layers of Mo and RbxSiy. The RbxSiy and Mo interface is thermodynamically stable, reducing intermingling of the layers and preventing reduction in refl...
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WO/2017/073906A1 |
An embodiment of the present invention provides a photo-mask repair system and method for repairing a photo-mask, which is used in a semiconductor process, through dissociation of gas using a laser beam when the photo-mask is required to...
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