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JP3290332B2 |
PURPOSE: To manufacture an emission efficiency controlling element easily, lower the driving voltage, make the size small, and improve the responsiveness by adjusting the voltage to be applied between a first electrode of a plate and a s...
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JP2002515645A |
A semiconductor manufacturing tool configuration and corresponding process for applying one or more levels of interconnect metallization to a generally planar dielectric surface of a semiconductor workpiece with a minimal number of workp...
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JP3287173B2 |
PURPOSE: To provide an infrared detecting element that is able to improve both infrared detecting and absorbing sensitivities in a thermally-sensitive semiconductor layer, also capable of doing both of absorption and detection of the inf...
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JP3287104B2 |
PURPOSE: To provide a pyroelectric light receiving element of high quality and high sensitivity without cracking, chipping and micro surface cracks at the time of being machined into thin plate shape by forming pyroelectric body material...
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JP2002131106A |
To improve long-term stability of a thermal air flow sensor.The microheater is provided with a thin film heating section established over a cavity section 3 formed on a monocrystal silicon substrate 2 to heat flowing gas to be measured. ...
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JP2002124708A |
To provide a thin film forming method capable of forming a ferroelectric thin film suitable for an infrared ray detecting element with high detecting sensitivity.Solution wherein organic polymer compound and inorganic compound turning to...
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JP3277097B2 |
PURPOSE: To obtain a ferroelectric thin film having a sufficiently high ferroelectric property and a smooth and compact surface by mixing a paraelectric substance in a ferroelectric substance. CONSTITUTION: At the formation of a ferroele...
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JP2002118295A |
To provide a thermoelectric conversion material and a thermoelectric conver sion element using it where the synergetic effect of a Seebeck effect and a Nernst effect is utilized while the Seebeck coefficient is high, for improved thermoe...
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JP2002107224A |
To provide a highly sensitive non-cooling type infrared sensor at a low cost.This infrared sensor is provided with infrared ray absorbing parts 201 and 202 absorbing an infrared ray, a thermoelectric conversion part 9 converting a temper...
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JP2002095959A |
To provide a reaction vessel of minute volume, in which temperature in a plurality of reaction regions equipped in one substrate is controlled easily and efficiently.The reaction vessel of minute volume, in which temperature in a plurali...
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JP2002090219A |
To provide a high-performance thermopile infrared detector with the membrane size fixed.A silicon substrate 1 has a hollow 13 formed by anisotropical etching into the backside and an LOCOS oxide film 2 formed therein. Bird beaks 12 are f...
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JP2002087882A |
To provide a semiconductor ceramic composition capable of increasing resistance and decreasing the gradient of B constant at a temperature near room temperature, increasing the gradient of the B constant at a high temperature and having ...
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JP2002076291A |
To provide a method for manufacturing a piezoelectric/ferroelectric thin-film device, capable of having the degrees of freedom for selecting substrate material and eliminating residue of the peel-off layer to a structure without bringing...
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JP2002071456A |
To prevent dispersion of sensitivity and detection errors arising from deterioration in anti-disturbance-light characteristics by preventing a element from being inclined.The infrared detector is provided with a base 1 with leads 31 and ...
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JP2002071451A |
To provide a thermal infrared detecting element of high sensitivity which is not complicated in its structure and improved in its infrared absorptivity and to provide an infrared image pickup device using it.The thermal infrared detectin...
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JP2002071450A |
To provide a thermal infrared detecting element and the manufacturing method and an infrared image pick-up device using the thermal infrared detecting element which can prevent deterioration of the reliability of the without adding the m...
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JP2002064941A |
To provide an image processing apparatus which uses heat generated inside effectively, and is able to reduce the cost.Heat generated in the microprocessor of a CPU 1 is converted into electric energy by a Peltier element 14, and a second...
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JP2002064005A |
To provide a semiconductor porcelain device such as a PTC thermistor which is possessed of a semiconductor porcelain whose temperature at which it starts increasing in resistance is low and resistance change rate is high.A PTC thermistor...
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JP2002054995A |
To obtain high detecting sensitivity by stably improving infrared ray absorptivity in a specific wave length band or a wide wave length band in a thermal type infrared ray detecting element.In this thermal type infrared ray detecting ele...
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JP2002054997A |
To provide a thermal type infrared ray detecting element and an infrared ray image pickup device having high detecting sensitivity by having high infrared ray absorptivity.This thermal infrared ray detecting element has a diaphragm struc...
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JP2002048636A |
To provide an infrared sensor in which the number of manufacturing processes is small, which comprises a diaphragm structure having the high strength of a leg and which can prevent the disconnection of a wiring part.The diaphragm structu...
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JP3254787B2 |
PURPOSE: To obtain an infrared sensor which has a small size and high sensitivity and can be manufactured at high productivity. CONSTITUTION: A semiconductor substrate 502 in which an infrared sensor element 501 and an infrared filter 50...
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JP3255704B2 |
PURPOSE: To attain an integration, and to easily cut off a noise, in a pyroelectric signal transmitting element for performing an electric insulation between a driving system and control system by using a pyroelectric material. CONSTITUT...
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JP3252626B2 |
PURPOSE: To provide a method of forming an infrared-ray absorbing layer excellent in infrared-ray absorption efficiency and accurately in a desired pattern into the diaphragm structure separated favorably in a thermal manner from a semic...
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JP3249174B2 |
PURPOSE: To eliminate the gap between an electrode and an insulation film, while eliminating fluctuation in the electric resistance of an infrared ray sensitive film, even upon occurrence of side etching in the electrode at the time of e...
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JP2001356056A |
To provide a non-contact type temperature sensor which achieves a longer optical path and a smaller size.A pedestal 3 is arranged on a,stem 1 inside a package and a concave type reflection surface 3a is formed on the top surface of the b...
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JP2001356057A |
To increase the effective area of a heat detector in the formation of a metal black absorption film for absorbing infrared rays on a membrane with the heat detector formed thereon.A membrane 16a and a beam 101 for supporting the membrane...
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JP3241385B2 |
Components such as pyroelectric sensors which are particularly sensitive to piezoelectric effects and can be adversely affected as a result by any mechanical stress or vibration are described. These adverse effects may be controlled by i...
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JP3235279B2 |
PURPOSE: To provide a ferroelectric substance thin film element having an optically smooth and transparent surface, a high refractive index and orientative property. CONSTITUTION: An organic metallic compound precursor is applied onto a ...
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JP2001332125A |
To easily form a composite ferroelectric substance thick film, in which temperature characteristics of a specific dielectric constant is flat, and a composite ferroelectric substance in which temperature characteristics of a pyroelectric...
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JP2001324390A |
To provide a thermal type infrared image sensor capable of measuring at high speed without being influenced by self-heat generation.A sensor array formed by arranging in parallel many bolometer type infrared sensor elements 2a is irradia...
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JP2001326367A |
To provide a sensor having a reliable thin film membrane structure.A sensor chip 3 (silicon substrate 10) is bonded on a stem 1. In the silicon substrate 10, a through hole 11 is formed, opening on the upper and lower surfaces of the sub...
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JP3226715B2 |
PURPOSE: To provide a flow rate sensor of which power consumption is little. CONSTITUTION: A pattern 104 of iron and a pattern 103 of platinum are formed on the surface of a thin film 101 of diamond by a sputtering method or a vaporizing...
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JP2001309122A |
To provide an infrared ray image sensor where a size of each pixel can be extended without incurring increase in the time constant or reduce the time constant without changing the size of each pixel.A sensor array is formed on a silicon ...
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JP2001303257A |
To manufacture a thin film having a high resistance temperature coefficient without forming the thin film to an island form in heat treatment even when a film thickness is confined to ≤1 μm and to obtain a thin-film platinum temperatu...
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JP2001304957A |
To provide a pyroelectric infrared sensor as well as method and device for detecting a human body which detects a human body in any attitude present in a specified detection space at various places without being limitted to a toilet, uti...
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JP2001304973A |
To provide an infrared image sensor which provides a stable output even when an environment temperature changes. A silicon substrate 11 is provided with a sensor array where many bolometer type sensor elements 2a are arranged in parallel...
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JP3223461B2 |
PURPOSE: To obtain a pyroelectric element for detecting infrared rays efficiently and stably. CONSTITUTION: In a pyroelectric element for detecting infrared rays through a pyroelectrics 1 and outputting an electric signal, the pyroelectr...
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JP2001284102A |
To provide a temperature sensitive resistance material, having a substantially constant resistance change rate over a wide temperature range which is substantially free of temperature management, has a small specific resistance, and a la...
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JP3217533B2 |
PURPOSE: To provide an infrared ray sensor which can detect both the infrared rays from a body moving as a single element and the infrared rays from a body standing still. CONSTITUTION: A pyroelectric element 15 and thermopile parts 19 a...
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JP2001272271A |
To provide a thermal infrared sensor which has superior infrared-absorbing efficiency, high sensitivity, small heat capacity of a detecting part and superior response characteristics. An infrared-absorbing film 26 is formed on the detect...
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JP2001272270A |
To provide a highly sensitive and low-noise infrared heat sensitive apparatus. This apparatus includes a thermoelectric conversion array 11 of a two-dimensional arrangement of a plurality of thermoelectric conversion parts 12, a photogat...
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JP3214216B2 |
PURPOSE: To constitute a high sensitivity pyroelectric sensor by forming a polarization inversion part in a ferroelectrics. CONSTITUTION: The pyroelectric sensor is constituted by forming a polarization inversion part and an electrode 3 ...
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JP3214031B2 |
PURPOSE: To provide a method for manufacturing a ferroelectric thin film element having a structure in which a ferroelectric single crystal thin film is formed directly or indirectly on a substrate made of a material which cannot be here...
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JP2001267643A |
To provide a pyroelectric infrared detector element which avoids accumulating charges on a pyroelectric substrate to reduce the popcorn noise and greatly improve the detection reliability.The pyroelectric infrared detector element has an...
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JP2001264441A |
To provide a calorimeter and a method for manufacturing it excellent in mechanical strength in placing multiple calorimeters on one substrate.In this calorimeter 1, an absorber 6 for converting radiation energy into heat and a resistor 5...
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JP2001257391A |
To provide a miniaturized, freely attachable/detachable and low-stress type signal coupler for forming a data communication link between circuit boards or between substrates.This signal coupler is provided with a transmitting part and a ...
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JP2001255204A |
To provide a pyroelectric infrared sensor with satisfactory characteristics by eliminating problems such as variations in sensitivity caused by positional displacement among a sensor element, sensor element support bodies, and a circuit ...
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JP3209034B2 |
PURPOSE: To maintain a positional relationship between an infrared detecting element and a supporting part so accurately by forming this supporting part of the infrared detecting element by an organic compound containing conductive powde...
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JP2001247958A |
To provide a method for manufacturing a bolometer material, capable of manufacturing a VOx bolometer material having higher temperature coefficient even in the case of the conventional resistivity and also capable of controlling resistiv...
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