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JP2000266596A |
To provide a pyroelectric infrared sensor capable of preventing misinformation with respect to the ambient temperature change in terms of a pyroelectric infrared sensor for detecting infrared rays. This pyroelectric infrared sensor compr...
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JP2000230860A |
To reduce the occupied area of a thermal infrared sensor, surely detect an object, improve the production yield of this sensor and reduce the element area of a thermal infrared array element. On a semiconductor substrate 18, a circuit wi...
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JP2000230859A |
To provide a microdevice having a thermally isolated diaphragm structure such as pyroelectric infrared sensors or gas sensors wherein the temp. of the diaphragm structure can be easily and quickly reset. A microdevice having a diaphragm ...
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JP2000230857A |
To raise the numerical aperture of a thermal type infrared sensor and also the production yield of a thermal type infrared array element. A semiconductor substrate 31 has a hollow 32 on which a diaphragm 33 having 8 beams 38 and a body 3...
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JP3080093B2 |
An oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1.5<=x<=2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (C...
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JP2000213991A |
To suppress the occurrence of noise and the crack breakage of a crystal and improve sensor sensitivity by forming a substrate section with a sash bar structure. An upper electrode 2a and a lower electrode 2b are formed on the upper face ...
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JP3070669B2 |
To provide a production method by which the adhesion of micro-bridge structure to a base after drying can be prevented and the micro-bridge structure adhered thereto can be recovered in the case where the surface of substrate made of sil...
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JP2000205950A |
To improve detecting sensitivity by laminating a ferroelectric layer, an electrode and an infrared ray absorbing layer in order on a semiconductor channel, and isolating the edge part and a transistor electrode formed on both sides of th...
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JP3062627B2 |
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JP3061012B2 |
To improve a contact strength of a transition metal oxide layer with a protective film interface, by inserting the step of forming a first protective film such as a silicon oxide film or the like between the step of forming the metal oxi...
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JP2000186958A |
To effectively reduce the heat capacity of an infrared ray absorbing diaphragm layer and to improve the sensitivity of an element by forming a mesh structure on a part or over the entire infrared ray absorbing diaphragm layer. A bolomete...
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JP2000169297A |
To provide a method for producing a thin ferroelectric oxide film, enabling the production of the thin ferroelectric oxide film having an arbitrary ferroelectric characteristic by controlling an arbitrary orientation direction and the am...
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JP2000164946A |
To provide a pyroelectric element which can have good detection performance by suppressing the generation of noise.An element piece 5, having electrodes formed at its both surfaces in its thickness direction is cut out from a Z-cut singl...
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JP3046615B2 |
A mesa (31) is formed from polyimide (or a similar polymer material) to achieve a high thermal resistance. In an exemplary thermal imaging application, an array of thermal isolation mesa structures (30) are disposed on an integrated circ...
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JP3040356B2 |
To raise pixel aperture ratio without depending on design for supporting leg, metal wiring, contact part, etc., which form heat-insulation structure, by providing a structure where an infrared ray absorbing part which absorbs infrared ra...
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JP3034291B2 |
PURPOSE:To allow the independent taking out of a thin film and the prevention of the failure thereof by solidifying liquid while applying a pressure stop the thin film and thereby forming the thin film at the time of forming the thin fil...
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JP2000106422A |
To provide a high ferroelectric thin film element and a manufacturing method thereof.This ferroelectric thin film element composed of an Si substrate, a conductive thin film having NaCl crystalline structured on the Si substrate and a co...
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JP2000103675A |
To provide a method for producing a pyroelectric ceramic composition by which the pyroelectric ceramic composition having the high pyroelectric coefficient and flat temperature characteristics, i.e., small temperature dependence is obtai...
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JP3030344B1 |
To enable an infrared detector to be improved in detection sensitivity in a room temperature range by a method, wherein infrared detection material is one or more kinds of metals selected from among rare earth metals and alkaline earth m...
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JP2000095522A |
To obtain a thin perovskite type manganese oxide film usable even in an electronic cooling temp. range and to obtain a high sensitivity IR sensing element using the film.In the thin perovskite type manganese oxide film contg. the element...
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JP2000077833A |
To form the electrode for mounting precise part in high accuracy, to achieve the efficiency of the process and to attribute to the compact configuration and the low cost of the part. A thin film electrode 12 is formed on a glass board 11...
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JP2000074740A |
To make a pyroelectric infrared sensor incorporable in such small package as TO-5 type package while not requiring a expensive part such as Zener diode and to obtain sufficient effect to an ESD. A stem 12 which, capped with a cap 2 provi...
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JP2000074739A |
To facilitate the mounting of fragile members and to make the process efficient to contribute to make components smaller and low in cost, especially for a pyroelectric infrared ray sensor. A plurality of elements are arranged closely to ...
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JP3013418B2 |
PURPOSE:To stick a substrate and a thin-film fast and firmly by composing a buffer layer of an oxide containing Ti. CONSTITUTION:For manufacture a dielectric thin-film, a sapphire substrate 2 as a face (c) in 10mmX15mm is fixed into a re...
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JP3006364B2 |
PURPOSE:To protect a heat insulating film from etching when a semiconductor thin film is etched even if the semiconductor thin film is overetched. CONSTITUTION:A substrate 2 has a hollow part 1. A heat insulating film 3 is so formed as t...
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JP3005703B2 |
PURPOSE:To provide a human-body detection and control switch wherein, when a human being goes out from a detection area, a control signal is turned off and a malfunction is not caused. CONSTITUTION:In a human-body detection and control s...
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JP3007795B2 |
A precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solut...
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JP2000030965A |
To prevent the deterioration of the retention and film fatigue characteristics of a piezoelectric element by using an alloy containing two or more platinum group elements selected from among platinum, palladium, iridium, rhodium, osmium,...
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JP2000031549A |
To prevent deterioration in retention characteristic and film fatigue characteristic caused by oxidation of an electrode to improve reliability of a device by using an alloy in which includes more than two kinds of metals among a platinu...
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JP3002720B2 |
To obtain a thin film of vanadium oxide having a large TCR near room temperature close to that of bulk VO2 and applicable to bolometer-type infrared ray sensors operable at room temperature, without using any heat treatment and without r...
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JP3002762B2 |
PURPOSE:To maintain the operating state of a load control appratus as desired by a method wherein a second infrared detection element is installed in a position which is different from a detection region for a first infrared detection el...
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JPH11345833A |
To provide a manufacture of electronic components which contribute to cost reduction of electronic components by facilitating the mounting of weak elements, and realizing the efficiency of process. Man-hours can be reduced through the in...
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JP2987476B2 |
PURPOSE:To provide a manufacturing method of pyro-electric elements which is capable of making the polalization process for various types of pyro-elements easier, and of achieving the improvement of mass-productivity. CONSTITUTION:Leader...
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JPH11330573A |
To provide a bump forming method in which troubles such as damage of an electrode caused by discharge due to rapid temperature change, suction of wafer to a part on a heater, and break of a wafer caused by more rapid temperature change a...
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JP2978653B2 |
PURPOSE: To provide a semiconductor thin film thermistor making good contact with metallic electrodes capable of maintaining the high rate of resistance change in an amorphous alloy semiconductor thin film. CONSTITUTION: This semiconduct...
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JP2969031B2 |
PURPOSE: To provide a semiconductor device, wherein a first thin film of prescribe pattern is formed covering the cavity of a substrate and whose periphery is supported by the substrate, and the first thin film on which a semiconductor t...
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JPH11281475A |
To eliminate reduction in resolution in a distant point of a scanning monitoring area, and to reduce a noise quantity of respective pyroelectric elements by forming the arranging directional length of distant point side pyroelectric elem...
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JPH11284247A |
To invalidate pyroelectric effect even if a piezoelectric ceramics are not of the same performance. When piezoelectric ceramics 2 and 3 are bonded to a metal vibration plate 1 with a bond 6, electrodes 4 and 5 of piezoelectric ceramics a...
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JPH11281476A |
To lengthen the service life, to facilitate maintenance/inspection, and to improve monitoring accuracy by constituting a pyroelectric element of a light receiving electrode plate for monitoring a two-dimensional scanning monitoring area ...
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JPH11242048A |
To reduce a cut-off frequency and to expand a sensitivity range by reducing sensitivity, making a circuit unstable, and eliminating the need for using a high-resistance feedback resistor. A feedback capacitor 4 is connected between the o...
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JPH11230826A |
To provide a pyroelectric element from which the occurrence of such a trouble as the shifting of electrodes on the front and rear surfaces of the element, the turning over of the electrodes during a vapor depositing process, etc., can be...
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JPH11233723A |
To enable a device to sufficiently exhibit the property of a functional oxide film or a dielectric film. The manufacture of a dielectric capacitor is as follows: a Ta-O-N film 4, 5-10 nm in thickness is made by performing ozone annealing...
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JPH11205898A |
To improve the crystallinity of a main conduction layer by providing the main conduction layer for inputting/outputting an electric signal to/from a dielectric thin film, an adhesion layer for making a substrate closely adhere to the mai...
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JP2927117B2 |
PURPOSE:To protect a pyroelectric element against breakage by sealing a metal cap and a board with thermosetting resin and making notches in the board around the metal cap thereby preventing the deforming force from being transmitted to ...
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JP2927116B2 |
PURPOSE:To enhance moisture resistance by covering components with a metal cap fitted with an infrared ray transmissive member and sealing the metal cap and a board with thermosetting resin. CONSTITUTION:A pyroelectric element 5, an FET ...
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JP2920000B2 |
PURPOSE:To inexpensively mass produce lead titanate zirconate of a shape with a high degree of freedom by dissolving a lead compound, a Zr compound and a titanium alkoxide in acetic acid to give a sol solution and burning the solution. C...
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JP2915585B2 |
PURPOSE:To prevent the generation of a dangling bond in an atomic structure, to increase an electric conductivity to increase the figure of merit of an thermoelectric conversion and to obtain a thermoelectric conversion element material ...
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JP2910699B2 |
To provide a thermal type infrared sensor whose reliability can be enhanced by achieving stable levitation of a diaphragm and whose sensitivity can be enhanced by reducing the heat conductance of a beam part. A thermal type infrared sens...
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JPH11168246A |
To reduce a drive voltage, increase amount of displacement, improve stability, and perform miniaturization by providing a displacement enlargement part that is on the same plane as a drive part, is connected to the drive part so that it ...
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JPH11106279A |
To provide a method for readily and rapidly forming a thin membrane having regulated crystal orientation on a substrate by forming an amorphous precursor membrane on the substrate, heating and firing the obtained amorphous precursor memb...
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