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JP3206427B2 |
To obtain a TGS crystal having a uniform characteristic in a growing direction by measuring the growing speed of the crystal in a specific axial direction, when growing the TGS single crystal in a solvent, and controlling super saturatio...
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JP3204130B2 |
To provide an infrared sensor element that can be further improved in sensitivity and specific detection rate, and also can be mass-produced inexpensively. The element 10 includes, for example, a square substrate 12 in terms of a top vie...
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JP2001223398A |
To provide a small pyroelectric element of improved detection sensitivity, with no degradation in mechanical strength.Plural grooves or recess are formed at a light-receiving electrode formation part which is formed on the surface of the...
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JP2001214270A |
To provide a method for securely synthesizing a PLZT thin film of a large area and high quality at the time of synthesizing a PLZT thin film onto a substrate of a large area such as an 8-inch Si substrate by controlling the composition o...
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JP3196823B2 |
To decrease the resistance of a leg part and to suppress the voltage drop on the leg part while heat conductance, which is same as the case where titanium is used, is being maintained using titanium silicide as the wiring material of the...
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JP3193994B2 |
PURPOSE:To obtain a thin film having excellent composition uniformity for multi-component solid solution by lead-containing substance, substance containing calcium and titanium-containing substance in solvent, providing the mixture solut...
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JP2001196651A |
To provide a highly reliable pyroelectric infrared detector which can reduce popcorn noises. A conductor pattern is formed on the back of a multi-polarized pyroelectric substrate and electrically grounded. Then, charged particles are irr...
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JP3188179B2 |
To crystallize a ferroelectric thin film by coating a substrate with a precursor solution containing the constitutive elements of ferroelectric thin film material, drying the solution to form a thin film, subjecting the thin film to heat...
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JP3186603B2 |
To provide a pyroelectric infrared sensor device capable of improving the specific detection ratio, readily varying the specific detection ratio, and being mass-produced at a low cost. A pyroelectric infrared sensor element 10 comprises ...
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JP3182703B2 |
PURPOSE: To obtain an inexpensive downsized infrared ray detecting element having high sensitivity by arranging a pair of conductive parts oppositely, While spacing apart from each other, on a semiconductor fiber thereby forming a hybrid...
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JP2001508637A |
The present invention embodies a piezo-pyroelectric energy converter and is directed to a method and apparatus for conversion of thermal energy to electrical energy and refrigeration. The present invention utilizes one or more piezo-pyro...
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JP3179861B2 |
PURPOSE: To make a contact hole in an electrode pad without destroying a cross-linked part. CONSTITUTION: A chromium(Cr) film 16 and a copper(Cu) film 17 are deposited sequentially on an electrode wiring layer 15 to form electrode pads 3...
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JP3180323B2 |
PURPOSE: To provide a semiconductor thin film thermistor whose semiconductor thin film is capable of maintaining a high resistance change rate and which is capable of obtaining excellent contact with a metal electrode and what is more, t...
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JP3177664B2 |
PURPOSE: To provide the lightweight discoloring means having both functions for heating and cooling to easily discolor the thermal coloration layer of an object which is thermally decolored and is provided with the thermal coloration lay...
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JP2001147156A |
To lower a thermal loss to efficiently increase temperature of a heat sensitive part by improving a film forming shape of an infrared absorbing material. This infrared absorbing material formed on the surface of the heat sensitive part 1...
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JP2001127260A |
To provide a semiconductor device with a ferroelectrics which is excellent in switching characteristics of at least 10 kV or less as hysteresis angular ratio. Related to a ferroelectrics of a formula PbZrxTi1-xO3, where 0.75
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JP2001116617A |
To provide a thin-film type device capable of increasing an area of a floating area without causing adhesion between the floating area and a substrate, and provide a manufacturing method therefor. This manufacturing method is as follows....
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JP3162097B2 |
PURPOSE:To eliminate a step between a temperature sensing part and an electrode of a thermal infrared-ray sensor, to reduce a stepwise disconnection and to prevent improper contact on a boundary. CONSTITUTION:After a temperature sensitiv...
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JP2001110996A |
To eliminate a difficulty in forming a buffer layer having an Si surface entirely coated with an even thickness, the difficulty resulted from the influence of an interface energy difference between a buffer layer material and Si serving ...
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JP2001099712A |
To provide a resistance type bolometer sensor capable of sensing a temperature more accurately by reducing distortion of an output value caused by a temperature change, and having a reduced manufacturing cost. In this bolometer, a bridge...
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JP3154513B2 |
PURPOSE: To improve the dispersibility of the subject powder by reacting a Ti compound with a Ba compound and optionally an Sr compound in wet state in the presence of H2O2, a semiconductivity-imparting agent and one or more compounds se...
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JP2001094162A |
To provide a method for using a thermoelectric conversion element with improved Seebeck coefficient by applying magnetic field to a thermoelectric conversion material, and provide a high-performance thermoelectric element with a large th...
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JP2001094161A |
To provide a pyroelectric element having a function of detecting an incident angle of infrared rays. A pillar part 1 of a shape like a pillar with its height in the z-direction, where a pyroelectric coefficient becomes greatest, is forme...
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JP2001091354A |
To provide a pyroelectric infrared thin-film element by which infrared rays can be measured with stable accuracy without being influenced by an ambient temperature even when the ambient temperature is changed. In this pyroelectric infrar...
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JP2001085752A |
To provide a semiconductor device for preventing the occurrence of damages to functioning film formed at a site which is likely to be affected by thermal stresses, and for reducing to the utmost the increase of manufacturing man-hours in...
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JP3150331B2 |
An organic thin film element is disclosed which has an organic thin film consisting of a mixed stacked charge-transfer complex of donor and acceptor molecules, wherein the organic thin film is made neutral by forming the mixed stacked ch...
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JP2001074531A |
To stabilize detection accuracy and improve reliability by accurately positioning a temperature sensitive resistor and a drilled hole formed on both surfaces of a silicon substrate. The front surface 1A side of a silicon substrate 1 is p...
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JP2001068748A |
To stabilize the detection characteristic of a pyroelectric sensor by irradiating a cut portion or the facet of an opening for processing with a laser beam in such a manner that the composition of a pyroelectric substrate is improved. A ...
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JP2001066183A |
To improve shock resistance, by forming support parts for loading a pyroelectric element with reversely L-shaped plate materials, in a pyroelectric infrared sensor. A pyroelectric element 7 has a surface electrode 7a and a back electrode...
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JP2001066185A |
To obtain high sensitivity, by forming a surface electrode and a back electrode on the whole front and back surfaces of a pyroelectric element, and by dividing the pyroelectric element after polarization to form plural independent pyroel...
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JP2001068668A |
To obtain a low-noise MOSFET and a sensor device integrating the MOSFET by a method wherein a channel is provided in the deep part of a semiconductor substrate. A channel 5a is provided in a depth of 1 to 10 nm or thereabouts from the su...
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JP3138299B2 |
PURPOSE: To measure maximum output voltage of photosensor or thermosensor, etc., without power source. CONSTITUTION: To a storing inductor element 20 constituted by putting a PZT ferroelectrics having variable thickness between Pt electr...
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JP3135727B2 |
PURPOSE: To provide a pad part formation method, that is not followed by peeling-off at the pad part even with a thinner film of a conduction layer to be used as an electrode, relating to an infrared ray sensor. CONSTITUTION: Relating to...
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JP3136649B2 |
PURPOSE:To provide a composite infrared ray detector which can effectively compensate a radiation thermocouple type infrared ray detecting part and a pyroelectric type infrared ray detecting part each other without cancelling characteris...
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JP3133922B2 |
PURPOSE: To provide a substrate coated with ferroelectric thin film substrate on which a ferroelectric thin film having a compact flat surface and an excellent leakage current characteristic and showing sufficiently large residual sponta...
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JP3132197B2 |
PURPOSE:To absorb infrared ray incident on the detecting part of an infrared sensor efficiently. CONSTITUTION:In a thermal infrared sensor where a pattern 5 for converting incident infrared ray into an electric signal is formed, on a die...
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JP2001015011A |
To provide a highly sensitive electronic device for detecting infrared rays, by injecting the infrared rays into a ferroelectric substance provided under a atmosphere from super high vacuum to atmospheric pressure, and emitting charge ge...
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JP2001012985A |
To provide a thermal air flow rate sensor having high reliability and enhanced measurement accuracy.The thermal air flow sensor comprises heaters 4 and a plurality of temperature measuring resistors 5a, 5b, 6 formed of a semiconductor th...
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JP2000356546A |
To provide a small and highly efficient infrared detection element by forming both a resistor of a first infrared detection part and an electrode of a second infrared detection part set on a same face of a substrate of a same conductive ...
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JP2000349355A |
To hold heat conductivity small, and to reinforce the support of an infrared detector on a substrate.This element is constituted of a substrate 11, an infrared detector(heat absorbing diaphragm) 10 constituted of an infrared absorbing pa...
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JP3114235B2 |
PURPOSE: To provide a simple and inexpensive array sensor for radiant temperature distribution measuring instruments. CONSTITUTION: This pyroelectric array sensor is constituted in such a way that a plurality of electrode pairs, each of ...
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JP3112680B2 |
PCT No. PCT/AU91/00162 Sec. 371 Date Dec. 17, 1992 Sec. 102(e) Date Dec. 17, 1992 PCT Filed Apr. 24, 1991 PCT Pub. No. WO91/16607 PCT Pub. Date Oct. 31, 1991.A thermal infrared detector comprising a dielectric pellicle suspended over a c...
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JP2000321125A |
To improve detecting sensitivity of an infrared sensor element by providing a resonance space between an infrared absorption layer and a reflecting layer, thereby reducing a thermal capacity of the element. An infrared absorption layer 2...
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JP2000321131A |
To provide a pyroelectric infrared sensor of maintenance free without need of selecting an installing place with easy handling by accurately executing a self-diagnosis and accurately sensing the presence of a human body or a heat source....
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JP2000304603A |
To provide an infrared radiation detector capable of simplifying the manufacturing process, reducing the cost, shortening the manufacturing time, and improving the yield. On a substrate 1, an infrared radiation reflecting film 2 and an i...
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JP2000298062A |
To provide a thermal function device of higher thermal reaction speed at lower price and smaller size. When an infrared ray is irradiated toward a diaphragm 2, a heat is generated to increase the output of a thermoelectric conversion ele...
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JP3097591B2 |
A thermal infrared detecting device includes a lower layer portion having a readout circuit, and an upper layer portion having a bolometer thin film covered with an insulating protective film to perform heat/resistance conversion. The up...
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JP3095944B2 |
PURPOSE:To provide a method for producing an oxide crystal thin film having excellent ferroelectricity by which a buffer layer for preparing a c-axis oriented Bi4Ti3O12 thin film is formed on a silicon substrate with good reproducibility...
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JP2000277818A |
To obtain a laminate wherein an yttria stabilizing zirconia layer with a (100) surface and a Pt film with a (100) surface are deposited in order on a silicon substrate with a (100) surface by orienting the silicon substrate, the yttria s...
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JP3094753B2 |
A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin fi...
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