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JP2004140288A |
To provide a method and a device for manufacturing an electrode of higher electron emission efficiency and superior durability, and to provide a thermal power generation device using the electrode.An electrode manufacturing device 200 co...
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JP3523588B2 |
To manufacture a semiconductor device where heat detectors can be disposed at high density by a method having superior in matching with a silicon mass-production process. This semiconductor device includes a silicon substrate 10, a heat-...
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JP3519720B2 |
To provide an electronic device, and its manufacturing method, in which a cap body for sustaining vacuum is provided for each cell utilizing an existing fabrication process of electronic device. An Al film 151 is formed on a wafer 150 fo...
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JP3517876B2 |
To control a crystal orientation of a ferroelectric thin film in accordance with a use of a ferroelectric thin film element. A lower electrode 71 including at least iridium is formed on an undercoat layer 6 essentially consisting of zirc...
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JP3514207B2 |
To provide a small ferroelectric thin film element which has a superior performance and is easy to process cheaply, a sensor using the same and a method of manufacturing the ferroelectric thin film element. Buffer layers are formed on an...
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JP3513048B2 |
To obtain a thermosensitive flow-rate sensor whose sensitivity is high and reliability is high and to obtain its manufacturing method. This flow-rate sensor is provided with a flow-rate detecting element 21 in which a heating resistor 4 ...
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JP2004093535A |
To provide a thermal type infrared solid state imaging device, capable of increasing the density of detector array, having least sensitivity unevenness and thermal crosstalks between pixels, and being small in size and low in cost, and t...
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JPWO2002039508A1 |
A bolometer thin film having a high temperature coefficient of resistance (| TCR |) is formed by a simple manufacturing process to provide a highly sensitive infrared detection element. In the present invention, ZyCuOx having a higher re...
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JP2004506332A |
The method for group manufacturing of pyroelectric sensors by forming a thin pyroelectric layer on the upper side of a silicon wafer, where each sensor comprises several pixels (4) and each pixel is defined by an upper electrode (6) situ...
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JP2004506188A |
Pyroelectric sensor has each pixel's secondary electrode made with no contact with other secondary electrodes. The pyroelectric sensor consists of a series of pixels (12A) with primary (14) and secondary (28) electrodes on opposite surfa...
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JP3494747B2 |
PURPOSE: To provide a thin film temperature sensor having a film bridge structure, and stabilized in electric characteristic, and a method for manufacturing it. CONSTITUTION: An electrode layer 6 is formed into a bridge form on a substra...
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JP3495309B2 |
To realize a thermal infrared imaging element in which the temperature of a photosensitive part can be made uniform and which can obtain an infrared imaging output with a small noise. A dummy thin-film thermosensitive element array 13 is...
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JP2004037291A |
To provide a high-performance pyroelectric infrared sensor for eliminating a thermal process causing quality degradation when manufactured and a thin film forming process using a wet process.The pyroelectric infrared sensor is provided w...
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JP2004006814A |
To reduce 1/f noise of a resistance change material in a bolometer type infrared ray sensor and to improve S/N of the infrared ray sensor.This method for manufacturing the resistance change material comprises the process of forming a thi...
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JP3484990B2 |
To provide a multilayer ferroelectric thin film having an optically smooth and transparent surface, and applicable to electro-optic elements, etc., using a light waveguide. This multilayer ferroelectric thin film is composed of a substra...
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JP3482883B2 |
To provide a ferrelectrics thin film element having a ferroelectrics thin film of a perovskite oxide excellent in orientation and its manufacturing method. A ferroelectrics thin film element 10 contains a single crystal substrate 12 on w...
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JP3480624B2 |
PURPOSE: To enhance a leak current characteristic, and manufacture a thin film showing large residual spontaneous polarization in a low temperature process by arranging a ferroelectric thin film on a substrate through a metallic oxide bu...
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JP3476443B2 |
To reduce a thermal conductance and a heat capacity in heat insulation structure. This sensor is provided with a silicon substrate 1 formed with a main circuit, the heat insulation structure 2 arranged in an upper part of the silicon sub...
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JP2003347609A |
To provide an apparatus structure which improves the figure of merit of an apparatus utilizing Nernst effect and Seebeck effect. The apparatus comprises a plurality of elements which are made of a thermoelectric material and each have at...
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JP2003344151A |
To provide a thermal infrared sensor and an infrared sensor array having a high detection sensitivity to infrared rays of a predetermined wavelength band. The thermal infrared sensor for detecting the infrared rays of the predetermined w...
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JP2003344155A |
To provide an infrared sensor capable of relaxing stress from a protective film to a thermoelectric converter. The infrared sensor includes a thermoelectric converter 5 for converting heat into electricity, and the protective film 6 for ...
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JP3472087B2 |
To form a conductive thin film exhibiting a high surface flatness, which can control stress of a ferroelectric thin film, especially a PZT thin film exhibiting a high surface flatness and an enough selfpolarization which is to be formed ...
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JP2003337066A |
To provide a bolometric infrared detector and a manufacturing method for the bolometric infrared detector that keep a high-speed response and high sensitivity, and at the same time can increase the bandwidth of a detection wavelength.The...
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JP3470546B2 |
To provide an infrared detector that is reduced in size further while being made to have no malfunction due to noise. At least a current/voltage conversion means 20 and a human body detection signal output means 50 are formed on the same...
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JP3470881B2 |
To exactly measure a wide range of flow by placing a plurality of pair of temperature sensors at difference distances from a micro heater by each pair on an upper and down streams of the microheater laced in air flow of a measurement flu...
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JP3470471B2 |
To obtain a polymeric electret material having a dielectric constant smaller than that of e.g. polyvinylidene fluoride and being excellent in piezoelectric properties, mechanical strengths, moldability, etc., by melting a polylactic acid...
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JP2003332573A |
To provide a gate insulating transistor having a ferroelectric dielectric layer in a gate insulator.A heat detector is provided with a conversion layer constituted of a semiconductor yttrium barium copper oxide, and this conversion layer...
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JP2003532067A |
A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and i...
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JP3461242B2 |
To allow characteristics of a pyroelectric thin film itself to be exhibited by preventing other members from being interposed between the pyroelectric thin film and an upper electrode and a lower electrode. After a lower electrode 5 is f...
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JP3460683B2 |
To provide a chip-type electronic component, having a glass coat layer resistant to crackings and a ceramic member whose insulation resistance is hard to degrade, and to provide a method of manufacturing the same. A laminate capacitor ha...
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JP2003298068A |
To provide a small-sized heating element for micro-reaction chamber.A thin film transistor formed of polycrystalline silicon is positioned adjacently to a thermal reaction chamber. The gate electrode of the transistor is formed in a sili...
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JP2003530538A |
A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower...
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JP2003529068A |
The invention relates to a device for detecting thermal radiation (3), comprising at least one thermal detector element (2) that converts the thermal radiation into an electric signal (4). The inventive device is further provided with at...
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JP2003270047A |
To provide an infrared sensor capable of preventing a sensor element from breaking due to heat when the sensor element having a membrane is directly mounted to a circuit board to achieve compactness.In the sensor element 30, a membrane p...
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JP2003267796A |
To provide an oxide capable of exerting excellent properties as a piezoelectric material, etc.The oxide having a perovskite structure comprises a component A, a component B and oxygen, wherein the component A denotes an alkali metal elem...
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JP2003528441A |
(57) [Summary] We discovered that the current plane of the current, which consists of an aggregate of extremely fine rectifying planes with the same rectifying direction, has the function of rectifying the thermokinetic electrons existin...
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JP2003527300A |
A green ceramic body, in particular a green ceramic film having a function layer which contains platinum and is applied in at least some areas is described; this function layer is photostructurable in daylight and in the presence of oxyg...
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JP2003259672A |
To obtain a creative technique capable of converting heat into electricity or light by discharge and luminance by establishing a principle enabling voltage amplification using thermal energy.This thermal dielectric amplification method i...
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JP2003250285A |
To provide an apparatus, system, and method for thermal power generation, excellent in conversion efficiency from thermal energy to electric energy.There are provided a heat absorbing window 12 which is so provided to a part of an outer ...
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JP3442080B2 |
To provide a gate insulating transistor having a ferroelectric dielectric layer in a gate insulator. A heat detector is provided with a conversion layer constituted of a semiconductor yttrium barium copper oxide, and this conversion laye...
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JP3440583B2 |
PURPOSE: To reduce a thin film resistance element forming process. CONSTITUTION: A thin film thermistor 24 of a structure where a lamination resistor 25 is sandwitched by the low resistivity layers 25b, 25c, in which a first resistance l...
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JP3435633B2 |
To form a ferroelectric thin film exhibiting excellent crystallinity in the shape of a silicon substrate by employing a platinum based element having face-centered cubic structure as a metallic material of a conductive thin film. A thin ...
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JP2003521118A |
The invention relates to a passive high-temperature resistant resistance element for measuring temperature consisting of an insulation layer (9; 10), which is essentially located in the interior, and of two conductive layers (8), which a...
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JP2003520447A |
A method of combining components to form an integrated device, wherein the components are provided on a first sacrificial wafer, and a second non-sacrificial wafer, respectively. The sacrificial wafer carries a first plurality of compone...
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JP3420432B2 |
To provide a pyroelectric infrared ray thin film element, of good sensitivity and good responsiveness, which can be manufactured in a simple process. Relating to a pyroelectric infrared ray thin film element S wherein an upper part elect...
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JP2003166883A |
To provide a flexible sensor material capable of increasing the internal resistance by a shape change, which is a detection material for acquiring an electric signal by a resistance change.This material is constituted by dispersing carbo...
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JP2003166877A |
To provide a manufacturing method of a pyroelectric detection element capable of stabilizing electric characteristics by suppressing a popcorn noise, increasing greatly quantity productivity, and simplifying furthermore, and having high ...
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JP3409848B2 |
To provide a thermal infrared detector which can control the drift of output from the detector caused by environmental temperature and/or the self-heating of the elements in the detector without a temperature controller such as a Peltier...
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JP3409944B2 |
PURPOSE: To provide a high-sensitivity and low-cost ferroelectric material element. CONSTITUTION: An MgO thin film 102, of which crystal is preferentially orientated and which consists of an NaCl crystal structure, is arranged on the sur...
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JP3406347B2 |
PURPOSE: To simultaneously produce an org. pyroelectric and piezoelectric body excellent in heat resistance and insulating property by forming a large-area polyurea film on a substrate in uniform thicknesss and quality with this device. ...
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