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WO/2023/202779A1 |
A lidar apparatus includes a vibration means configured to apply vibrations to a laser part of a lidar sensor to provide sensor pitch variations of an amplitude modulo less than or equal to a resolution of the lidar sensor. The lidar app...
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WO/2023/203026A1 |
A semiconductor component (10) for emitting light comprising a main body (11), which has at least one mesa unit having at least one mesa portion comprising – arranged on a surface (18) of the main body (11) – an emission region (13) ...
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WO/2023/203774A1 |
A semiconductor laser device according to the present disclosure comprises: a stem; a thermoelectric element that is provided to a position which is on an upper surface of the stem and which is displaced to one side with respect to the c...
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WO/2023/204992A1 |
One example includes an atomic optical reference system. The system includes an optical system comprising a laser configured to generate an optical beam. The system also includes a vapor cell comprising alkali metal atoms that are stimul...
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WO/2023/202184A1 |
An optical module (100) and an optical communication device. The optical module (100) comprises a first housing (110), a second housing (120), an optoelectronic element (130) and a circuit board (140). The optoelectronic element (130) an...
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WO/2023/198225A1 |
A lateral optical mode control high power semiconductor device, a preparation method therefor, and a semiconductor packaging structure. The lateral optical mode control high power semiconductor device comprises: a semiconductor substrate...
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WO/2023/199645A1 |
Provided is a surface emission laser which can suppress structural complications and control a polarization direction. A surface-emission laser according to the present technology comprises a resonator including first and second struct...
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WO/2023/200169A1 |
A VCSEL-based optical device having a common anode and a plurality of insulated cathode structures, and an optical module are disclosed. According to one aspect of the present embodiment, provided are: a VCSEL having a common anode struc...
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WO/2023/198429A1 |
The invention relates to an optoelectronic device assemblage (17) having – a substrate body (14) with a plurality of optoelectronic components (15), and a housing body (4, 5) connected to the substrate body (14), or – a substrate (23...
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WO/2023/198604A1 |
A laser circuit (10) comprises a switched-capacitor circuit (110), a video digital-to-analog converter (23) and a laser (20) with a first and a second terminal (21, 22). The first terminal (21) of the laser (20) is coupled to the switche...
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WO/2023/198866A1 |
A method of operating an optoelectronic laser device comprising the steps of: providing the optoelectronic laser device (1) comprising at least one first and at least one second laser ridge (3, 4) arranged on a semiconductor substrate (2...
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WO/2023/199459A1 |
An optical semiconductor device (110) of the present disclosure is configured such that an effective refractive index is nc and a wavelength is λ, and the optical semiconductor device includes an anti-reflection film (10) on an end surf...
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WO/2023/199372A1 |
This DML driver (2) is configured from a PMOS transistor (M1p), an NMOS transistor (M1n), an inductor (L1), a resistor (Rin), and an optical waveform compensation function unit (20) connected between a source and a ground of the NMOS tra...
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WO/2023/198607A1 |
A laser circuit (10) comprises a video digital-to-analog converter (23), a laser (20) with a first and a second terminal (21, 22), a first supply terminal (11) which is coupled via the video digital-to-analog converter (23) to the first ...
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WO/2023/199660A1 |
The present invention provides: a nitride semiconductor light emitting element that has good quality; and a method for producing a nitride semiconductor light emitting element that has good quality. A nitride semiconductor light emitti...
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WO/2023/201378A1 |
An LBM package and method for packaging an LBM using a stamped metallic mirror array that folds light beams, correct beam shapes, fold and/or redirect beam propagations. The mirror array can be integrated or assembled inside an LBM to pr...
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WO/2023/198865A1 |
The invention relates to an optical phased array having a signal input for supplying useful light of a first wavelength, and to a first modulation input for supplying modulation light of a second wavelength. A first waveguide array, havi...
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WO/2023/198605A1 |
A laser circuit (10) comprises a temperature sensor (85), a temperature compensating circuit (86) having an input coupled to the temperature sensor (85), a video digital-to-analog converter (23) and a laser (20) with a first and a second...
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WO/2023/194828A1 |
A pulsed laser diode driver includes multiple resonant laser diode driver cells, each cell including an inductor having a first inductor terminal to receive a source voltage, a source capacitor coupled between the first inductor terminal...
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WO/2023/194100A1 |
The invention relates to a method for producing an optoelectronic component (1), said method having the following steps: - providing a carrier (2); - applying a plurality of semiconductor chips (3) to the carrier (2), wherein the semicon...
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WO/2023/195129A1 |
Provided is a synthesized light generation device that achieves a compact size, has high production efficiency, and has reduced manufacturing costs. This synthesized light generation device comprises: a base substrate (100); an optical...
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WO/2023/193975A1 |
The invention provides a housing cap (1) for an electronics component (130). The housing cap comprises a main body (10) with an opening (12) which is closed by a window (60). The window (60) is connected to the main body (10) using a com...
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WO/2023/189131A1 |
This semiconductor light emitting device comprises: a substrate that has a first principal surface on one side and a second principal surface on the other side; a plurality of via electrodes embedded in the substrate at intervals such th...
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WO/2023/187777A1 |
Systems subsystems and methods for controlling temperature of a laser diode (LD) stack including at least one LD bar of at least one LD emitter, for achieving a desired temperature of the LD stack and corresponding emission wavelength of...
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WO/2023/188826A1 |
[Problem] To provide a light-emitting device having excellent reliability. [Solution] A light-emitting device 10 comprises a first base body 20, wherein: the first base body 20 has a first substrate 21, light-emitting elements 22 which a...
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WO/2023/188967A1 |
This semiconductor laser device comprises a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The ins...
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WO/2023/190278A1 |
[Problem] To accurately correct variations of light-emitting elements and light-receiving elements. [Solution] A light detection device comprising: a plurality of light-emitting elements each of which emits a first light pulse signal; a ...
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WO/2023/188534A1 |
This semiconductor laser device comprises: at least one laser element that emits a laser beam; a housing part that houses thereinside the at least one laser element; a gas supply part that supplies gas from outside the housing part; and ...
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WO/2023/184857A1 |
A laser system and a laser driving method. The laser system may comprise: a main control chip (110); a laser emitter (100), wherein the laser emitter (100) has a reference laser power value; a laser driving circuit (120), which is connec...
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WO/2023/188427A1 |
According to a semiconductor laser evaluating method of the present invention, in a current-to-optical output characteristic, which is a relationship between an injection current of a semiconductor laser and an optical output thereof, wh...
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WO/2023/188405A1 |
A vertical cavity surface emitting laser (VCSEL) includes a distributed Bragg reflector (DBR) including a first dielectric layer and a second dielectric layer alternately arranged in a first axial direction; and a semiconductor section i...
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WO/2023/188426A1 |
This semiconductor device comprises: a substrate (101) formed from a semi-insulating compound semiconductor; a first photoactive element (102) formed above the substrate (101); a second photoactive element (103) formed above the substrat...
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WO/2023/189231A1 |
Provided is a nonlinear conversion processing device capable of applying nonlinear conversion processing to a light signal directly at low electric power consumption and a high speed. This nonlinear conversion processing device compris...
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WO/2023/189523A1 |
This surface-emitting laser element is provided with: a light-transmissive substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer; an air-hole layer which is a photonic crystal layer included in the n-typ...
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WO/2023/185784A1 |
A laser and a laser projection device, relating to the technical field of photoelectricity. The laser comprises: a frame (100); the frame (100) comprising a bottom plate (101) and an annular side wall (102) located on the bottom plate (1...
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WO/2023/191788A1 |
A laser transmitter component including a photonic integrated circuit substrate including a plurality of laser transmitters coupled to at least one optical output, the laser transmitter component configured to emit a light beam from one ...
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WO/2023/190277A1 |
[Problem] To make it possible to accurately correct unevenness in a light-emitting element or a light-receiving element. [Solution] This light detection device comprises: a plurality of light-emitting elements that each emit a first ligh...
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WO/2023/184378A1 |
A laser, a lidar and a movable platform. The laser comprises: a substrate, the substrate comprising a first pad and second pads; a laser diode array, the laser diode array comprising M laser diodes, the M laser diodes sharing an N pole, ...
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WO/2023/186358A1 |
The invention relates to a laser (10) comprising a semiconductor body (2) and a terminal structure (3), wherein - the semiconductor body (2) has a first waveguide (21), a second waveguide (22) and a recombination zone (23) located thereb...
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WO/2023/186864A1 |
A single-mode cascade laser (1) that will lase at a pre-specified lasing wavelength and how to manufacture such a laser. A buried-heterostructure waveguide (5) is terminated to a precisely specified length of ≤ 100 μm by dry etching i...
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WO/2023/186390A1 |
The invention relates to a surface-emitting semiconductor laser diode having an epitaxial semiconductor layer stack (10), the epitaxial semiconductor layer stack (10) comprising: - a first wave guide layer (1) and a second wave guide lay...
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WO/2023/189247A1 |
The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface th...
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WO/2023/190336A1 |
In the present invention, a light-emitting element comprises: a light-emitting body that includes a first-type semiconductor unit that has a first side surface and a first-type electrical conductivity, an active part positioned below the...
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WO/2023/189268A1 |
This light-emitting device comprises, for example: a condenser lens which receives input of an array of a plurality of light beams that travel in a first direction and are aligned at intervals in a second direction; and a light-emitting ...
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WO/2023/188115A1 |
A semiconductor device (100) according to the present disclosure comprises: a semiconductor substrate (20); semiconductor layers (21, 22, 23, 24, 25, 27) formed on the semiconductor substrate (20); identification pattern regions (15, 16)...
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WO/2023/179937A1 |
A laser device (20) is provided, the laser device (20) comprising at least one first ridge structure (21), and at least one second ridge structure (22), wherein the first ridge structure (21) is configured to emit laser radiation, the se...
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WO/2023/181716A1 |
Provided are a surface-emitting laser, a surface-emitting laser array, and an electronic device in which the reliability of a transparent conductive film is increased. The present technology provides a surface-emitting laser in which a...
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WO/2023/180550A1 |
The invention relates to a stacked laser assembly comprising a first laser device with a light outlet side and a semiconductor body forming an resonator and having an active zone and two main sides and substantially perpendicular lateral...
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WO/2023/180788A1 |
The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cl...
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WO/2023/179967A1 |
The invention relates to an optoelectronic component, having: - a support (5) and at least two lasers (1, 2) which are arranged on the support (5), wherein - the surface area of a common beam outlet window (6) of the optoelectronic compo...
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