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WO/2022/014497A1 |
The present invention provides a filter that can easily adjust the frequencies of resonators individually. This filter comprises: a piezoelectric film 3 that comprises lithium niobate or lithium tantalate; an acoustic wave resonator 1 ...
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WO/2022/012437A1 |
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a lead-out electrode, a piezoelectric layer, and an external electrode t...
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WO/2022/012438A1 |
The present invention relates to a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a first electrode, a piezoelectric layer and a second electrode which are stacked; an effect...
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WO/2022/014496A1 |
The present invention provides a filter that can easily adjust the frequencies of resonators individually. This filter comprises: a piezoelectric film 3; an acoustic wave resonator 1 that has a functional electrode 4 provided upon the ...
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WO/2022/012334A1 |
The present disclosure relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer provided between th...
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WO/2022/014276A1 |
Provided is an elastic wave device in which Q characteristic degradation tends not to occur. An elastic wave device 1 comprises a piezoelectric substrate 2 and an IDT electrode 7 provided on the piezoelectric substrate 2. The IDT elect...
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WO/2022/014494A1 |
Provided is an elastic wave device capable of suppressing ripples in frequency characteristics. An elastic wave device 10 according to the present invention is provided with: a support substrate; a piezoelectric layer 14 provided on th...
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WO/2022/014332A1 |
An elastic wave filter (1) comprises a first filter circuit (10) disposed on a first path (r1) connecting a first signal terminal (T1) and a second signal terminal (T2), and an additional circuit (20) having an elastic wave resonator gro...
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WO/2022/014440A1 |
Provided is an elastic wave device that can suppress ripples in frequency characteristics. The elastic wave device 10 according to the present invention is provided with: a support substrate; a piezoelectric layer 14 provided on the su...
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WO/2022/008957A1 |
Methods and apparatuses are provided for a matched band pass filter utilized in a duplexer or multiplexer. In one embodiment, the matched band pass filter includes a filter part and a port-matching part that is coupled to and in signal c...
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WO/2022/007234A1 |
Provided is a resonator (100), comprising a substrate (1), a composite film (2), and a longitudinal acoustic wave reflector (3); the composite film (2) comprises a first electrode (21), a piezoelectric functional film (22), a second elec...
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WO/2022/010843A1 |
Dual thickness shear mode resonators that include a piezoelectric crystal with a contoured shape. A first electrode that extends along a first side of the piezoelectric crystal, and a second electrode that extends along the second side o...
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WO/2022/009976A1 |
The present invention makes it easier to perform printing on a module surface. This high frequency module (100) comprises a mounting substrate (9), an elastic wave filter (1), a protective member (4), a resin layer (5), and a shield laye...
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WO/2022/007238A1 |
Provided is a resonator, comprising a substrate (1), a composite film (2) arranged on the substrate (1) along a first direction, and a vertical soundwave reflector (3) disposed on the composite film (2) at a side near the substrate (1). ...
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WO/2022/009692A1 |
This multiplexer (1) is provided with a first filter and a second filter (2a and 2b) which share a common connection at a common terminal (3); the passband of the second filter (2b) overlaps, at least partially, with a band 0.75-0.8 time...
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WO/2022/007246A1 |
A resonator (100), comprising a substrate (1), a composite film (2), and a longitudinal acoustic wave reflector (3). The composite film (2) comprises, arranged sequentially in a first direction, a first electrode (21), a piezoelectric fu...
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WO/2022/010833A1 |
An acoustic wave device for performing at least one of emitting acoustic energy into a fluid and receiving the acoustic energy from the fluid. The device includes a substrate with a cavity that is configured to hold the fluid. A resonato...
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WO/2022/000809A1 |
Provided in the present disclosure is a resonator structure, comprising a substrate, a bottom electrode formed on the substrate, a piezoelectric layer formed on the bottom electrode and a top electrode formed on the piezoelectric layer. ...
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WO/2022/000153A1 |
A cavity (201) structure of a bulk acoustic resonator, and a manufacturing process. The cavity structure comprises a substrate (101) and cavities (201) formed in the substrate (101), wherein supporting layers (301) are arranged on the su...
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WO/2022/004190A1 |
The present invention improves the filter characteristic of a first filter while suppressing degradation of the filter characteristic of a second filter. A multiplexer (1) is provided with a first terminal (101), a second terminal (102),...
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WO/2022/004071A1 |
This piezoelectric oscillator (1) is provided with a piezoelectric oscillator element (10), a piezoelectric oscillator element (10), a base member (30), and a lid member (40). The lid member (40) comprises a top wall section (41) and sid...
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WO/2022/001194A1 |
The present invention provides a filter and duplexer of a miniature acoustic resonator based on a cancellation technology. The filter comprises two hybrid couplers which are connected to each other. Each hybrid coupler comprises an input...
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WO/2022/004069A1 |
This piezoelectric oscillator (1) comprises a piezoelectric oscillation element (10), a base member (30), and a lid member (40), wherein: the lid member (40) has a top wall part (41) and a side wall part (42); the side wall part (42) has...
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WO/2022/004070A1 |
A piezoelectric oscillator (1) is provided with a piezoelectric oscillation element (10), a base member (30), and a lid member (40). The lid member (40) has a top wall part (41) and a side wall part (42), the side wall part (42) having a...
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WO/2022/003251A2 |
A MEMS (microelectromechanical system) resonator, comprising a first layer of single-crystalline silicon, a second layer of single-crystalline silicon, and a piezoelectric layer in between said first layer of single-crystalline silicon a...
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WO/2022/001861A1 |
The present disclosure relates to a bulk acoustic resonator. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer, wherein the resonator further comprises a...
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WO/2022/001860A1 |
The present disclosure relates to a bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer, wherein an overlapped area of the acoustic mirror, the bottom ele...
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WO/2021/261485A1 |
This elastic wave device comprises a composite substrate and an excitation electrode positioned on an upper surface of the composite substrate. The composite substrate comprises a support substrate, a multilayer film, and a piezoelectric...
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WO/2021/258405A1 |
Disclosed is a thin film bulk acoustic resonator, comprising a bottom electrode layer, a piezoelectric layer and a top electrode layer, which are provided above a substrate where an acoustic wave reflection structure is located, wherein ...
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WO/2021/260978A1 |
This crystal oscillator is provided with a crystal piece, a pair of excitation electrodes formed on a first main surface of the crystal piece and a second main surface thereof on the opposite side to the first main surface, a pair of con...
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WO/2021/261464A1 |
An elastic wave resonator (4) is provided with a piezoelectric body (6) and a plurality of electrode fingers (14, 22) positioned on the piezoelectric body and arrayed in propagation directions (TD) of an elastic wave. The plurality of el...
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WO/2021/258442A1 |
A bulk acoustic wave resonance apparatus, a filter apparatus, and a radio frequency front end apparatus, the bulk acoustic wave resonance apparatus (300) comprising: a first layer (310) comprising a first cavity (330) positioned on a fir...
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WO/2021/254342A1 |
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a first substrate provided with a first cavity; a piezoelectric stacked ...
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WO/2021/256264A1 |
In the present invention, a layered part (120) includes, above at least an opening (113), the following: a first single-crystal piezoelectric layer (130); a second single-crystal piezoelectric layer (140); an intermediate electrode layer...
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WO/2021/256265A1 |
A layered part (120) includes, at least above a recess (113), a first single crystal piezoelectric layer (130), a second single crystal piezoelectric layer (140), an intermediate electrode layer (150), a lower electrode layer (160), and ...
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WO/2021/248572A1 |
Disclosed is a thin film bulk acoustic resonator, comprising a bottom electrode layer, a piezoelectric layer, and a top electrode layer which are provided on the upper part of a substrate on which an acoustic reflection structure is loca...
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WO/2021/248866A1 |
A bulk acoustic resonator and a manufacturing method therefor, a filter and an electronic device. The manufacturing method comprises: providing a substrate (100), a groove (110) being formed in the substrate (100); forming a sacrificial ...
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WO/2021/251159A1 |
This piezoelectric device is provided with a base part (110) and a laminate part (120). The laminate part (120) includes, at least above a recess (113), a piezoelectric layer (130) and a pair of electrode layers (140, 150) that apply vol...
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WO/2021/246447A1 |
Provided is an elastic wave device with which it is possible to increase element capacity and make advances in size reduction. This elastic wave device 1 is provided with: a support member 13 having a void part 13c; a piezoelectric lay...
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WO/2021/246832A1 |
The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transfer rate beyond 4th generation (4G) communication systems such as long term evolution (LTE). According to various em...
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WO/2021/244978A1 |
A layered solid element (100) comprises a ferroelectric layer (2) of a crystalline material Li1-x(Nb1-yTay)1+xO3+2x-z which has X- or 33°Y-orientation with respect to a substrate (10) of the layered solid element. The ferroelectric laye...
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WO/2021/246443A1 |
A membrane section (Mb) is provided with a penetrating groove (180) penetrating in the vertical direction thereof. The width of the penetrating groove (180) in a single crystal piezoelectric layer (130) becomes narrower further downward ...
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WO/2021/246446A1 |
Provided is an elastic wave device having excellent surge resistance and power durability. An elastic wave device 10 of the present invention is provided with: a support member 13 having a recess 13a; a piezoelectric layer 16 provided ...
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WO/2021/246454A1 |
Provided is an elastic wave device in which a piezoelectric film located on a cavity is unlikely to be cracked. An elastic wave device 1 is provided with a piezoelectric film 2 and an IDT electrode 10 on the piezoelectric film 2, where...
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WO/2021/241696A1 |
Provided is a frequency filter using a piezoelectric thin film, the frequency filter being able to perform frequency-filtering on high-frequency power of bulk power handled in a base station of a mobile phone. The frequency filter 10 com...
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WO/2021/241681A1 |
Provided is an elastic wave device which has increased adhesion between layers of a piezoelectric substrate and in which delamination of layers is less likely to occur. An elastic wave device 1 comprises: a support substrate 3; a low a...
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WO/2021/241434A1 |
Provided is an elastic wave device capable of more reliably suppressing diffusion of Cu of which an IDT electrode is made into a piezoelectric substrate. The elastic wave device of the present invention is provided with a piezoelectric...
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WO/2021/241364A1 |
Provided is an elastic wave device in which transverse modes can be effectively suppressed. This elastic wave device 1 comprises a piezoelectric substrate 2 and IDT electrodes 3A to 3C. The IDT electrodes 3A to 3C include a first pitch...
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WO/2021/238558A1 |
Provided are a piezoelectric motor (10) and an electronic device. The piezoelectric motor (10) comprises: a piezoelectric patch (12); a circuit board (14) arranged on a side of the piezoelectric patch (12) and electrically connected to t...
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WO/2021/241117A1 |
In the present invention, an IDT electrode provided on a piezoelectric film comprises: a first busbar (31) and a second busbar (32); and a plurality of first electrode fingers (33) and second electrode fingers (34). In a region where the...
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