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WO/2021/242440A1 |
A package that includes a first filter (312) comprising a first polymer frame (318), a substrate cap (320), a second filter (332) comprising a second polymer frame (338), at least one interconnect (340), an encapsulation layer (450) and ...
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WO/2021/238873A1 |
A surface acoustic wave device includes a substrate that has a top surface and that contains a plurality of protrusions protruding from the top surface and spaced apart from each other, an intermediate layer disposed on the substrate so ...
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WO/2021/241435A1 |
Provided is an elastic wave device which can more reliably suppress diffusion of Cu into a piezoelectric substrate, the CU constituting an IDT electrode. This elastic wave device comprises: a piezoelectric substrate 2; a barrier layer ...
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WO/2021/241355A1 |
Provided is an elastic wave device wherein it is difficult for there to be deterioration of a characteristic due to a high-order mode. In this elastic wave device 1, on a support substrate 2, an intermediate layer 3 and a piezoelectric...
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WO/2021/232763A1 |
A film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a carrier substrate (100); a supporting layer (102) bonded to the carrier substrate (100), the supporting layer (102) enclosi...
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WO/2021/236613A1 |
A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branch...
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WO/2021/231132A1 |
A filter can include a monolithic substrate and at least one conductive layer formed over a top surface of the monolithic substrate and along at least a portion of one or more of a first top edge of the monolithic substrate or a second t...
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WO/2021/226826A1 |
A surface acoustic wave filter production method and a surface acoustic wave filter, relating to the field of surface acoustic wave, and capable of reducing the difficulty in making pistons and reducing the production costs of surface ac...
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WO/2021/229872A1 |
A crystal oscillator 1 according to the present invention is provided with: a crystal oscillator element 40; a first substrate 10 on which the crystal oscillator element 40 is mounted; a resin layer 30 which is provided around the crysta...
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WO/2021/230315A1 |
This capacitive element comprises: a piezoelectric substrate; a first electrode finger extending in a first direction as a positive direction; and a second electrode finger that is disposed to be spaced apart from the first electrode fin...
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WO/2021/227347A1 |
A band-pass filter circuit and a multiplexer. The band-pass filter circuit comprises at least one electromagnetic LC filter circuit (00) and at least one sound wave resonance unit (10). The sound wave resonance unit (10) comprises an inp...
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WO/2021/229941A1 |
A temperature sensor (400) uses a Micro-Electro Mechanical Systems (MEMS) resonator (500). The temperature sensor (400) comprises: a MEMS resonator (500); a sweep unit (401) for sweeping the frequency of an excitation signal of an oscill...
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WO/2021/227208A1 |
A cavity (405) machining process for a MEMS device, comprising the following steps: depositing a mask layer (102, 202) on a substrate (101, 201, 301, 401); etching off, by using photolithography and etching processes, the mask layer (102...
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WO/2021/227170A1 |
Provided in the embodiments of the present invention are a bulk acoustic wave resonance device, a filtering device and a radio frequency front end device. The bulk acoustic wave resonance device comprises: a first passive part comprising...
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WO/2021/223731A1 |
The present application relates to a bulk acoustic wave resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer. The top electrode is provided with raised portions at both a ...
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WO/2021/225419A1 |
The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting higher data transmission rates than 4th generation (4G) communication systems such as Long Term Evolution (LTE). According to various e...
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WO/2021/222412A1 |
An acoustic resonator device includes a piezoelectric plate attached to a substrate. A portion of the piezoelectric plate forms a diaphragm suspended over a cavity in the substrate. A first conductor level includes first and second inter...
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WO/2021/217748A1 |
A method for forming a filtering device, comprising: (S101) forming a first layer, comprising providing a first substrate; forming a resonant device pre-processing layer, the resonant device pre-processing layer comprising a first side a...
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WO/2021/220974A1 |
Provided is an elastic wave device having small loss. In an elastic wave device 1, an IDT electrode 6 and reflector electrodes 7, 8 are provided on a piezoelectric substrate 2. The IDT electrode 6 includes a first electrode finger 6c a...
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WO/2021/220544A1 |
A piezoelectric vibrator (1) according to the present invention comprises: a piezoelectric vibration element (10) which has a piezoelectric piece (11) and excitation electrodes (14a, 14b) provided on the piezoelectric piece (11); and a s...
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WO/2021/217749A1 |
Provided are a filtering device, a radio frequency front-end device and a wireless communication device. The filtering device comprises: a substrate, a passive device and at least one resonance device, wherein the passive device comprise...
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WO/2021/220936A1 |
Provided is an elastic wave device capable of suppressing a lateral mode and high-order modes. An elastic wave device 1 according to the present invention is provided with a piezoelectric substrate 2 and an IDT electrode 7. The IDT ele...
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WO/2021/220889A1 |
The present invention provides an elastic wave device in which the response caused by Rayleigh waves is suppressed. An elastic wave device 1 comprises: an IDT electrode 5 that is provided upon a piezoelectric substrate; and reflector e...
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WO/2021/220887A1 |
The present invention provides an elastic wave device that enables more reliable transverse mode suppression. An elastic wave device 1 according to the present invention comprises: a piezoelectric substrate 2; and an IDT electrode 7 th...
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WO/2021/221162A1 |
Provided is an elastic wave device that is capable of suppressing ripples caused by undesired waves and has a high Q value even if the device is further downsized. This elastic wave device 1 is provided with: a piezoelectric layer 2 co...
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WO/2021/218858A1 |
An acoustic resonator, used in a wireless communication device and a terminal device. The acoustic resonator comprises: a first electrode made of a conductive material; a second electrode made of a conductive material; and a piezoelectri...
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WO/2021/219821A1 |
Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material (620) and an electrode structure (629). The electrode structure includes a first busbar (622) and a second busbar (624). The electrode s...
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WO/2021/219050A1 |
A resonator assembly and a method for manufacturing same, a filter having the resonator assembly, and an electronic device having the filter or the resonator assembly. The resonator assembly comprises a bulk acoustic resonator and a surf...
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WO/2021/220542A1 |
A piezoelectric vibrator (1) comprises a piezoelectric vibration element (10), a base member (30), an electrically conductive adhesive bonding member (50), and a lid member (40) of electrically conductive material. The lid member (40) ha...
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WO/2021/220536A1 |
Provided are a resonator and a resonance device capable of further improving the DLD. A resonator 10 comprises: a vibration portion 110 which includes three or more of a plurality of vibration arms 121A to 121D, each of the vibration a...
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WO/2021/220737A1 |
Provided are a composite substrate capable of improving temperature characteristics while suppressing the generation of cracks and a method for manufacturing the composite substrate. The method according to the present invention for ma...
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WO/2021/222433A1 |
(Object) To provide elastic wave devices each including a cavity portion but unlikely to cause cracks in a piezoelectric film. (Solution) An elastic wave device (1) includes a piezoelectric film (2) made of lithium niobate or lithium tan...
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WO/2021/219788A1 |
Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar (622) and a second busbar (624). The electrode structure fur...
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WO/2021/221449A1 |
The present invention relates to a filter and to a manufacturing method for same, and particularly, the filter comprises: an RF connector which establishes a predetermined electrical signal line; a filter body which has at least one impe...
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WO/2021/222427A1 |
[Object]To provide an elastic wave device in which a decrease in Q value is unlikely to occur and cracks in a piezoelectric film are unlikely to occur even when the size of the elastic wave device is reduced. [Solution]An elastic wave de...
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WO/2021/220535A1 |
The present invention provides a resonator and a resonance device capable of further improving DLD. A resonator 10 is provided with: a vibration unit 110 including three or more of a plurality of vibration arms 121A-121D which respecti...
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WO/2021/219794A1 |
Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material (602) and an electrode structure (604) that includes a first busbar (622) and a second busbar (624) along with electrode fingers (626) a...
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WO/2021/222409A1 |
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a piezoelectric plate having opposed front and back surfaces. A first electrode and a second electrode are formed on the front surface of the pie...
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WO/2021/216382A1 |
A 3D integrated circuit (3D IC) chip (400) is described. The 3D IC chip includes a die (440) having a compound semiconductor high electron mobility transistor (HEMT) active device (410). The compound semiconductor HEMT active device is c...
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WO/2021/212882A1 |
Disclosed are a resonator and a method for forming same. The method for forming the resonator comprises: forming a first electrode (104); forming a piezoelectric layer (105) located on the first electrode (104); and forming a second elec...
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WO/2021/213401A1 |
A bulk acoustic resonator, an effective region of which has an effective area. In the effective region, a second end point (32') of an input side (31), a first end point (34') of an output side (34), a second end point (35') of the outpu...
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WO/2021/215108A1 |
The present invention improves the thermal dissipation of an acoustic wave filter. A high frequency module (100) comprises a mounting board (9), an acoustic wave filter (1), a resin layer (5), and a shield layer (6). The mounting board (...
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WO/2021/212546A1 |
Provided is a planarization method capable of making the local flatness of a product to be machined more even. A product to be machined is provided with a cavity filled with an oxide, and said product comprises a first electrode layer, a...
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WO/2021/215466A1 |
A bonded substrate according to the present disclosure has a support substrate formed of silicon monocrystals and a piezoelectric substrate formed of monocrystals of lithium tantalate or lithium niobate, the support substrate and the pie...
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WO/2021/215302A1 |
Provided are a composite substrate with which it is possible to construct an elastic wave device capable of suppressing spurious due to high-order modes, and an elastic wave device having the composite substrate. A composite substrate ...
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WO/2021/213402A1 |
Provided is a filter, comprising: a plurality of serial resonators, and a plurality of parallel resonators, wherein each resonator comprises a substrate (101), an acoustic mirror (103), a bottom electrode (102), a top electrode (106), an...
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WO/2021/212547A1 |
Provided is a flattening method, capable of improving a local flatness uniformity of a product to be processed. The product is provided with a cavity filled with an oxide, and comprises a first electrode layer, a piezoelectric layer, and...
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WO/2021/213349A1 |
A filter element. A filter layout of the filter element comprises multiple resonators constituting a filter, and comprises an input pin, an output pin, and one or more grounding pins. A packaging substrate of the filter element comprises...
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WO/2021/213333A1 |
A BAW resonator, comprising: a piezoelectric film array, comprising a plurality of piezoelectric films between a substrate and a cap layer, wherein a plurality of first cavities are provided in the vertical direction between adjacent pie...
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WO/2021/215040A1 |
A crystal oscillator (1) comprising a piezoelectric oscillating element (10), a base member (30) to which the piezoelectric oscillating element (10) is mounted, and a lid member (40) of an electrically conductive material that forms an i...
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