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WO/2014/077107A1 |
Provided is a polishing composition which has good storage stability and can polish an object having poor chemical reactivity at a high speed. The present invention is a polishing composition which comprises a silica having an organic ac...
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WO/2014/076955A1 |
In this device for polishing both surfaces of a semiconductor wafer, flat polishing is not performed by arranging only a semiconductor wafer (50) within a round hole (42) formed in a carrier (40), but is performed by arranging the semico...
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WO/2014/074612A1 |
A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH ≤ 3 or pH greater th...
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WO/2014/073344A1 |
The purpose of the present invention is to provide a multilayer polishing pad having a long service life, which is not susceptible to separation between a polishing layer and a cushion layer even in cases where the multilayer polishing p...
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WO/2014/069457A1 |
Provided is a polishing composition which is suitable for the polishing of an object having a metal wiring layer (14) formed thereon and can reduce the occurrence of uneven defects while keeping the polishing speed at a high level. A pol...
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WO/2014/069042A1 |
The purpose of the present invention is to provide: a polishing pad which exhibits high water absorption and is still capable of maintaining high dimensional stability upon absorption of moisture or water, and which does not easily cause...
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WO/2014/069043A1 |
Provided is a polishing composition with which a high-gloss surface can be achieved, and with which smoothness of a surface of an alloy material is improved while maintaining a sufficiently high polishing speed with respect to the alloy ...
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WO/2014/069139A1 |
[Problem] To provide a polishing composition that makes it possible to adequately maintain a high polishing speed with respect to a barrier layer and an insulating film and that can minimize the occurrence of surface defects such as eros...
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WO/2014/065029A1 |
This CMP polishing solution for polishing a substrate including an aluminium-based material includes abrasive grains, an oxidant, and a liquid medium. The circularity of the abrasive grains is not more than 0.90. The pH of the CMP polish...
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WO/2014/061417A1 |
A polishing solution for CMP, which can be used for polishing a base comprising an aluminum-containing material, and which comprises abrasive grains, an oxidizing agent, at least one component selected from the group consisting of diethy...
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WO/2014/061423A1 |
[Problem] To provide a grindstone and a grinding/polishing device using same with which, in addition to it being possible to perform the three processes of rough processing, lapping, and polishing with the same device: double-sided proce...
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WO/2014/057932A1 |
This process for manufacturing a polishing composition includes a step for mixing a water-soluble polymer powder with water to form a water-soluble polymer mixture, wherein the content of particles having diameters of 50μm or smaller in...
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WO/2014/054611A1 |
In this polishing method, an alloy material is polished using a polishing pad and a polishing composition that is supplied to the polishing pad. The polishing composition contains a polishing material that is formed of silica or alumina,...
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WO/2014/051127A1 |
A method for manufacturing a glass substrate for a magnetic disk, wherein, when the end face of a glass substrate is to be polished, lines of magnetic force that proceed in the thickness direction of the glass substrate are formed using ...
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WO/2014/049844A1 |
This method for polishing a board-like body is provided with: a planarity measuring step wherein planarity of a board-like body surface to be polished is measured; and a polishing step wherein the surface of which the planarity has been ...
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WO/2014/051104A1 |
Provided is a polishing pad capable of shortening the time for the polishing process to start and of improving smoothness. A polishing pad (10) comprises a polyurethane sheet (2) formed by the wet deposition method. The polyurethane shee...
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WO/2014/045653A1 |
In this method for manufacturing a glass substrate for an information recording medium, the adsorption force of a polishing pad (410) on a glass substrate (1) is 0.50 g/cm2 to 15 g/ cm2 when slurry is supplied to the polishing pad (410).
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WO/2014/045654A1 |
This method for producing a glass substrate for a recording medium is provided with: a precision polishing step (S18) for precision polishing the primary surface of a glass member with an acidic, colloidal-silica-containing polishing liq...
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WO/2014/045937A1 |
[Problem] To provide a polishing composition suited to polishing an object having a metal wiring layer, the polishing composition being capable of reducing step defects while maintaining a high polishing speed. [Solution] A polishing com...
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WO/2014/041991A1 |
Provided is a polishing composition capable of adequately maintaining a high polishing rate for a barrier layer and an insulating film, capable of adequately suppressing the polishing rate of a low-dielectric material, and capable of pre...
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WO/2014/038129A1 |
The present invention is a double surface polishing method for polishing both surfaces of a wafer simultaneously by: holding the wafer in a carrier comprising a holding hole for holding the wafer and a ring-shaped resin insert that is di...
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WO/2014/038704A1 |
The purpose of the present invention is to provide: a polishing auxiliary agent capable of improving the polishing efficiency of a polishing agent (particularly abrasive grains) while inhibiting polishing blemishes at least to the extent...
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WO/2014/034425A1 |
A polishing composition containing a water-soluble polymer having a weight average molecular weight of 1,000,000 or less and a molecular weight distribution represented by the weight average molecular weight (Mw)/the number average molec...
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WO/2014/034358A1 |
A polishing agent according to one embodiment of the present invention contains a liquid medium, abrasive grains that contain a hydroxide of a tetravalent metal element, a polymer compound that has an aromatic ring and a polyoxyalkylene ...
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WO/2014/035045A1 |
The present invention relates to a retainer ring structure for a chemical-mechanical polishing (CMP) apparatus, wherein an insert ring according to the present invention is made from two or more metal materials, is provided with a plural...
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WO/2014/034379A1 |
A polishing agent which contains: abrasive grains that contain a hydroxide of a tetravalent metal element; a compound that is obtained by adding oxyethylene and/or oxypropylene to ethylene diamine; and a liquid medium.
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WO/2014/030570A1 |
In the present invention, a polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed onto the silicon dioxide. The carbon-converted...
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WO/2014/032012A1 |
Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.
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WO/2014/026549A1 |
Disclosed is a chemical mechanical polishing method for a shallow trench isolation structure, comprising: performing polishing with a polishing liquid of a first selection ratio; performing polishing with a polishing liquid of a second s...
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WO/2014/018170A1 |
A polishing pad, for polishing of a work piece having portions that are non-planar, the polishing pad comprising a first side and a second side of the polishing pad. The first side is substantially flat, and the second side is configured...
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WO/2014/017148A1 |
The purpose of the present invention is to provide a method for manufacturing a laminated polishing pad wherein a polishing layer and a supporting layer are not easily peeled from each other even when the temperature of the pad becomes h...
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WO/2014/013977A1 |
Provided is a composition for polishing an alloy material, which is used for the purpose of polishing an alloy material. The alloy material contains a first metal species that serves as a main component and a second metal species that is...
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WO/2014/013887A1 |
The present invention relates to an apparatus for polishing a plate-like body, which is provided with: a suction sheet that sucks and holds a plate-like body; a film body to which the suction sheet is attached; a carrier to which the fil...
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WO/2014/010384A1 |
The present invention relates to a polishing device for plate-like body, provided with: a suction sheet for retaining a plate-like body through suction; a film to which the suction sheet is attached; a carrier to which the film is attach...
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WO/2014/007063A1 |
The present invention relates to a polishing solution for CMP, which comprises silica particles, a quaternary phosphonium salt having at least one aromatic ring bound to a phosphorous atom and water, wherein each of the silica particles ...
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WO/2013/191165A1 |
Disclosed is an observation and photography apparatus to which a polishing mechanism (20) is attached. The polishing mechanism (20) is provided with: a turntable (24) with a perpendicular rotation shaft (23); a polishing cloth (26, 27) f...
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WO/2013/191139A1 |
In the present invention, a polishing composition contains abrasive particles, a surface adsorption agent, and water and is used to polish a polishing target comprising crystalline metallic compounds. Compared to the case where the surfa...
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WO/2013/187358A1 |
The purpose of the present invention is to provide a polishing material composition which is capable of combining excellent polishing speed and endurance, and which reduces polish-surface surface roughness so as to inhibit scratches on t...
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WO/2013/187354A1 |
In order to use less cerium oxide and achieve higher durability and polishing speeds, these abrasive particles used in an abrasive have: a shell layer (3) which is the outermost shell layer of the abrasive particles and is formed with ce...
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WO/2013/184465A1 |
Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surf...
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WO/2013/183475A1 |
This polishing pad is a polishing pad including a polishing layer comprising expanded polyurethane resin, characterized in that the expanded polyurethane resin contains an epoxy group-containing urethane polymer and an amine based curing...
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WO/2013/179719A1 |
This polishing composition is used in applications in which an object to be polished containing a phase-change alloy is polished. The polishing composition is characterized in that two carbonyl groups contained in a molecule contain at l...
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WO/2013/180079A1 |
The present invention provides a slurry for chemical mechanical polishing that contains: abrasive grains (a); a compound (b) having an amino group with a pKa value of greater than nine, and three or more hydroxyls; and water.
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WO/2013/179718A1 |
Provided is a polishing composition for use in the polishing of an object to be polished that comprises a phase-change alloy. The polishing composition is characterized by comprising a brittle film-forming agent that is at least one comp...
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WO/2013/179717A1 |
Provided is a polishing composition for use in the polishing of an object to be polished that comprises a phase-change alloy. The polishing composition is characterized by comprising an additive that is at least one compound selected fro...
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WO/2013/179926A1 |
Provided is a polishing material slurry which is capable of smoothly polishing a substrate with high polishing rate even if the substrate is a high-hardness material having a Mohs hardness of 8 or more. The present invention is a polishi...
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WO/2013/181582A1 |
An abrasive pad for use on hard surfaces is described. The pad includes a fibrous, non-woven body with an abrasive coating containing diamond particles applied to a first side thereof. A plurality of diamond-impregnated abrasive elements...
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WO/2013/179716A1 |
Provided is a polishing composition for use in the polishing of an object to be polished that comprises a phase-change alloy. The polishing composition is characterized by comprising an additive that is at least one compound selected fro...
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WO/2013/179721A1 |
This polishing composition contains an oxidizing agent and a polishing accelerator, and is used in applications in which phase-change alloys are polished. The oxidizing agent has sufficient redox potential for oxidizing a single element ...
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WO/2013/179720A1 |
This polishing composition is used in applications in which an object to be polished containing a phase-change alloy is polished, and is characterized by containing a reducing agent. The polishing composition may contain abrasive grains,...
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