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WO/2013/175860A1 |
A method for manufacturing abrasive grains, said method being provided with a step wherein an alkaline solution is mixed with a metal-salt solution containing a salt of a tetravalent metal, yielding particles containing a hydroxide of sa...
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WO/2013/177251A1 |
The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method ...
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WO/2013/175854A1 |
A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an ab...
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WO/2013/175976A1 |
Provided is a polishing agent composition for CMP, capable of minimizing the generation of scratches and giving the surface of a device wafer a good evenness.　The polishing agent for chemical and mechanical polishing of the invention c...
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WO/2013/175853A1 |
A method for manufacturing abrasive particles, said method being provided with the following steps: a step in which an alkaline solution is mixed with a metal-salt solution containing a salt of a tetravalent metal, yielding particles con...
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WO/2013/175859A1 |
A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an ab...
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WO/2013/175857A1 |
A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an ab...
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WO/2013/175856A1 |
A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an ab...
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WO/2013/176122A1 |
The purpose of the present invention is to provide a polishing solution composition which, in the polishing of a wafer for a substrate in the electronic industry, can impart hydrophilicity to the surface of the wafer and can improve a ha...
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WO/2013/172111A1 |
This polishing composition contains an abrasive grit and a water-soluble polymer. The water-soluble polymer is an anionic compound having an acid dissociation constant (pKa) of no greater than 3. Cited as specific examples of such a comp...
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WO/2013/161049A1 |
Provided is a SiC single crystal substrate which can form excellent epitaxial growth films and with which a high-quality epitaxial substrate can be obtained. This SiC single crystal substrate has a surface polished by CMP processing, and...
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WO/2013/161591A1 |
Provided is a SiC single crystal substrate which can form excellent epitaxial growth films and with which a high-quality epitaxial substrate can be obtained. This SiC single crystal substrate has a surface polished by CMP processing, and...
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WO/2013/162950A1 |
The present invention provides methods and apparatus for a pre-CMP semiconductor substrate buffing module. The invention includes a polishing pad assembly adapted to be rotated against a major surface of a substrate; a chuck adapted to h...
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WO/2013/162856A1 |
A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a ...
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WO/2013/161701A1 |
A method for manufacturing a polishing composition, characterized in comprising: a step for mixing silica particles as abrasive grains, a basic compound, and water, and preparing a mixture; and a step for adding an aqueous solution conta...
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WO/2013/157442A1 |
The present invention provides a polishing composition capable of limiting the occurrence of level differences due to etching on the surface of the object that is being polished when polishing an object to be polished that has a germaniu...
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WO/2013/157554A1 |
A composition for a silicon wafer polishing agent, wherein: the composition comprises silica particles (Component A), at least one kind of nitrogen-containing basic compound (Component B) selected from among amine compounds and ammonium ...
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WO/2013/157465A1 |
This polishing composition contains an oxidizing agent having a reference electrode potential of 350-740 mV, a polishing accelerator for silicon, a polishing speed increasing agent for a silicon through electrode material, a contaminatio...
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WO/2013/153880A1 |
Provided is a method for polishing a glass substrate, in which the glass substrate is polished while supplying a polishing solution between the glass substrate and a polishing pad, said method being characterized in that the polishing so...
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WO/2013/153875A1 |
The purpose of the present invention is to provide a method for readily producing a laminated polishing pad that is less susceptible to peeling between a polishing layer and a support layer or an intermediate layer even if polishing for ...
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WO/2013/154913A1 |
The invention provides a polishing pad that contains at least one light-transmitting region and optionally a polishing pad body. The light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least on...
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WO/2013/146133A1 |
A carrier (500) has: one first holding through hole (520C) disposed in the proximity of the center position thereof; and a plurality of second holding through holes (520P) disposed in a circular shape around the first holding through hol...
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WO/2013/146517A1 |
The present invention provides a material for holding an item to be polished that improves warpage and thickness precision of the material, inhibits scratching of the object to be polished, improves wear resistance, and is economically a...
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WO/2013/146135A1 |
If the diameter of a glass substrate (1) is Dmm, and the distance from the center position (C1) of a carrier (500) to the center position (C2) of a first holding through hole (520C) of the carrier (500) is rmm, the central position (C2) ...
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WO/2013/146131A1 |
A carrier (500) has a glass-substrate non-holding region (S) that does not hold a glass substrate (1). If the diameter of the glass substrate (1) is Dmm, the glass-substrate non-holding region (S) includes a circular region encompassing ...
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WO/2013/146132A1 |
A carrier (500) has a glass-substrate non-holding region (S) that does not hold a glass substrate (1). If the diameter of the glass substrate (1) is Dmm, the glass-substrate non-holding region (S) includes a circular region encompassing ...
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WO/2013/146892A1 |
Provided are a method for manufacturing a finishing polishing pad, and the polishing pad, allowing few polishing flaws and being capable of forming a stable film, by means of a polishing pad having a polyurethane resin film as a polishin...
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WO/2013/146733A1 |
A method for producing a polishing pad having a polyurethane resin film as a polishing layer on a film substrate, the method comprising: a step in which a polyurethane resin film-forming composition containing a polyurethane resin and an...
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WO/2013/147569A1 |
The present application relates to an adhesive tape, a polishing pad, a method for manufacturing the polishing pad, a polishing apparatus, and a method for manufacturing a glass substrate. An illustrative adhesive tape can be an adhesive...
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WO/2013/147046A1 |
This polishing composition polishes a tungsten-containing metallic layer formed on an insulating layer, wherein the polishing composition contains abrasive grains; one or more halogen acid selected from the group consisting of iodic acid...
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WO/2013/142134A1 |
The present invention is directed to a self-conditioning polishing pad. The self-conditioning polishing pad comprises an insoluble polymeric foam matrix and insoluble polymeric foam particles within the foam matrix. The particles are coa...
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WO/2013/141225A1 |
[Problem] To provide a polishing material for a lapping process, and a method for manufacturing a substrate using the material, in which polishing speed and surface roughness are simultaneously improved. [Solution] A polishing material f...
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WO/2013/137220A1 |
The present invention pertains to a grinding method having: a step for preparing a substrate having (1) silicon nitride as a stopper and at least a portion of (2) a wiring metal and at least a portion of (3) an insulating material at the...
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WO/2013/137212A1 |
This abrasive composition is used in applications at a pH of at least 7 and when abrading a silicon substrate. The abrasive composition contains an abrasive grit and a water-soluble polymer. The water-soluble polymer is a copolymer compr...
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WO/2013/133198A1 |
This polishing composition contains an abrasive and water. By mass, grains (A) with diameters from 40 to 80 nm constitute at least 50% of the abrasive and grains (B) with diameters from 150 to 300 nm constitute at least 10% of the abrasi...
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WO/2013/129426A1 |
Provided is a polishing pad which enables the improvement of a polishing rate and in-plane uniformity, the suppression of increase of a PCR, and the achievement of a good step elimination property. A polishing pad comprises a plurality o...
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WO/2013/129619A1 |
Provided is a production method for a glass substrate for a magnetic disk whereby: a high-quality glass substrate can be produced for which surface defects such as minute scratches, etc., can be reduced; polishing using free abrasive gra...
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WO/2013/125445A1 |
This abrasive contains: water; an abrasive grit including a hydroxide of a tetravalent metallic element; and a specific glycerin compound.
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WO/2013/125446A1 |
This polishing agent contains: water; abrasive grains including a tetravalent metallic element hydroxide; a polyalkylene glycol; and at least one type of cationic polymer selected from a group comprising an arylamine polymer, a diarylami...
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WO/2013/125441A1 |
This abrasive contains: abrasive grit containing a hydroxide of a tetravalent metallic element; a specific glycerin compound; and a specific positive ionic polymer.
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WO/2013/121932A1 |
This polishing composition contains: abrasive grains (A) which have an average primary particle diameter of from 15nm to 45 nm (inclusive); and abrasive grains (B) which have an average primary particle diameter that is from 0.25 to 0.8 ...
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WO/2013/121706A1 |
The present invention is a polishing head, which: is formed with a rigid circular ring, an elastic membrane bonded to the rigid ring, and an intermediate plate that is connected to the rigid ring so as to be capable of moving in the vert...
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WO/2013/121718A1 |
The present invention is a method for polishing both surfaces of a wafer in which: a wafer is held in a holding hole of a carrier; said held wafer is placed between upper and lower surface plates on which polishing cloths have been affix...
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WO/2013/118648A1 |
The present invention provides a method for producing a glass product, which produces a glass product through a polishing step wherein glass is polished using a cerium-based polishing agent and a cleaning step wherein the glass is cleane...
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WO/2013/118578A1 |
The present invention relates to a polishing pad which comprises: a plurality of first grooves that are provided in parallel at a predetermined interval in a surface to be polished; a plurality of second grooves that are provided in the ...
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WO/2013/119271A1 |
Embodiments of the present invention relate to an apparatus and a method for transferring substrate processing equipment. One embodiment of the present invention includes a track assembly having a continuous guide rail formed from a unit...
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WO/2013/118710A1 |
This polishing composition contains: silicon dioxide particles that have an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by a BET method; a nitrogen-containing water-soluble p...
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WO/2013/115172A1 |
The present invention relates to a polishing fluid for metal for polishing at least part of a metal portion of a substrate. The polishing fluid for metal comprises an A constituent that is a metal solubilizer including an amino acid, a B...
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WO/2013/112301A1 |
Methods, apparatus, and systems are provided for detecting the presence of a substrate in a load cup. The invention includes a proximity sensor having a detection pad disposed below a contact surface of a load cup assembly and a target d...
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WO/2013/112307A1 |
Methods, apparatus, and systems are provided for retaining a substrate in a polishing head of a CMP system. The invention includes a flexible inner retaining ring adapted to contour to an edge of a substrate and an inner ring support cou...
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