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WO/2002/051589A1 |
The invention relates to an arrangement of a chemical-mechanical polishing tool for chemical-mechanical polishing a surface on a wafer, comprising a polishing pad (4), a drive unit (9), pressing means (6), a wafer holder (5), first dispe...
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WO/2002/043923A1 |
A cleaning device for cleaning a polishing pad (12) has a first cleaning system (5) with an abrasive disk (50) and a second cleaning system (2) with a distributor device (20) for discharging a gas-water mixture at high pressure. The poli...
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WO/2002/038335A1 |
Methods and apparatus (10) for chemical mechanical planarization of an article (25) such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning...
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WO/2002/030618A1 |
A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems (200a) is provided. The method includes applying radiation to an amount of slurry (218) before the slurry (2...
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WO/2002/026444A1 |
The present invention provides device and system for suppressing edge instability during a chemical mechanical planarization (CMP) process for planarizing a surface topography on a wafer. A wafer carrier (308) holds and rotates a wafer o...
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WO/2002/022284A1 |
The invention relates to a roller cage (6) for at least one hard-rolling roller (3) of a tool for hard-rolling grooves or radii on bearing points (1) of crankshafts, whereby the hard-rolling roller (3), on a section of the periphery ther...
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WO/2002/014015A1 |
In a chemical-mechanical polishing machine (101) where a polishing head (100) holds a wafer (150) against a polishing pad (140), a retaining ring (300) that surrounds the wafer (150) has an open chamber (350) to distribute pressurized sl...
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WO/2002/001618A1 |
A slurry recycling system for use in a chemical mechanical polishing (CMP) apparatus for polishing a workpiece by using a slurry containing an abrasive, a pH agent and a deionized water is provided. The slurry recycling system includes a...
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WO2000062977A9 |
A method of conditioning a polishing pad for use with a polishing machine. The method includes installing the polishing pad to be conditioned on the polishing machine's platen (12) and applying a conditioning load force to the pad (20). ...
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WO/2001/091974A1 |
A method of conditioning a polish pad (202) at the point of polish and for dispensing slurry at the point of polish. In one embodiment, the method comprises several steps. In the first step, polishing slurry is received at a CMP machine....
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WO/2001/091973A1 |
A method of dispensing slurry at the point of polish. In one embodiment, the method comprises several steps. In the first step, polishing slurry is received at a CMP machine. Next, a polish pad (202) is rotated. Then, the polishing slurr...
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WO/2001/089767A2 |
A method of manufacturing a semiconductor component includes forming a first layer over a semiconductor substrate, providing a mixture comprised of a first component and a second component, optically detecting a concentration of the firs...
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WO/2001/081496A1 |
A polishing agent comprising mother grains and, being held on the surface thereof, ultra fine abrasive grains; a method for preparing the polishing agent which comprises a step of adding mother grains to ultra fine abrasive grains and a ...
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WO/2001/081042A1 |
A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a...
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WO/2001/076819A1 |
The present invention provides a method of polishing and/or cleaning a substrate using a multi-component polishing and/or cleaning composition, wherein the components of the polishing and/or cleaning composition are mixed at the point-of...
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WO/2001/073259A1 |
A flow completion apparatus for controlling the flow of fluid through a tubing string which extends into a well bore and defines a tubing annulus surrounding the tubing string, the flow completion apparatus comprising a wellhead housing ...
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WO/2001/073257A1 |
A flow completion system for controlling the flow of fluid from a well bore, comprising a tubing spool and a production outlet which communicates with a central bore; a tubing hanger which is supported in the central bore and which inclu...
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WO/2001/070462A1 |
A method of polishing a surface of a substrate wafer wherein slurry is recycled back to the interface between the polishing pad and the substrate surface during the polishing and newly-formulated slurry is supplied to the interface durin...
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WO/2001/066309A1 |
A method for polishing articles comprising soft acrylic materials is disclosed. The method includes a polishing step and a cleaning step. In the polishing step, a receptacle is charged with polishing beads of various sizes, alumina, a sw...
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WO/2001/064354A2 |
A method for repairing and lustering defects on a hydrophilic coat surface is reported. The method comprises the steps of applying a buffing composition on a hydrophilic coat surface; and buffing the hydrophilic coat surface to which the...
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WO/2001/062441A1 |
The mixing devices currently on offer by manufacturers are sophisticated equipment and are therefore expensive. To achieve the thorough mixing of the various components introduced into the mixing container, an impeller is often used to s...
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WO/2001/057150A1 |
A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective si...
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WO/2001/056946A1 |
Fused abrasive particles comprising aluminium oxide (151) -aluminium rare (153) eutetic material (150). The fused abrasive particles can be incorporated into abrasive products such as coated abrasives, bonded abrasives, non-woven abrasiv...
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WO/2001/056742A1 |
A polishing device and a polishing method, wherein high-efficiency high-accuracy mirror finishing of work (including wafers) is made possible; a novel work holding plate for effectively holding work; and a work bonding method capable of ...
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WO/2001/045888A1 |
A lapping compound holding tank (60) positionable at least partially below the lapping chamber of a lapping machine. The cylindrical tank is rotatable about its axis and includes a fixed mixer and scraping assembly (80) positioned in the...
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WO/2001/045897A1 |
An automatic trimmer machine (5) for finding the geometrical center of an optic having a non-round periphery, trimming the edge of the optic to a prescribed diameter for each optic, cleaning and drying the optic, and verifying the diamet...
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WO/2001/045899A1 |
A polishing pad has a structure capable of supplying water to the plane of contact with a workpiece, especially a domain structure with an area of less 1 $m(x) 10?-6¿ m. The pad is suitable for semiconductor applications because it is u...
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WO/2001/044402A1 |
A method of polishing or planarizing a substrate comprising abrading at least a portion of the surface of a substrate comprising a metal, metal oxide, metal composite, or mixture thereof, with a composition comprising a metal oxide abras...
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WO/2001/044396A1 |
The polishing composition of this invention is useful for chemical mechanical polishing of substrates containing noble metals such as platinum and contains sulfur-containing compounds at about 0.1 % to 50 % by weight of the polishing com...
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WO/2001/044395A1 |
This invention provides a polishing composition with a stable pH for use in CMP of semiconductor substrates comprising: high-purity submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The metal salt is prese...
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WO/2001/043933A1 |
The invention relates to a method for separating a machining suspension, which accumulates for example during the mechanical machining of silicon, quartz or ceramic, from a cutting fluid. Abrasive grains, in addition to attrition materia...
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WO/2001/043178A1 |
A polishing-product discharging mechanism adapted to efficiently discharge the polishing-product produced while polishing an object base plate (100) by a grinding stone (90); and a polishing device. The polishing device that is adapted t...
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WO/2001/039260A1 |
The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere ...
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WO/2001/036555A1 |
A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises about 5-90 wt.% of fumed metal oxide and about 10-95 wt.% of abrasive particles, wherein about 90 % or more of...
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WO/2001/036554A1 |
A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt.% of fumed metal oxide, and abou...
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WO/2001/032794A1 |
A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds...
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WO/2001/032793A2 |
Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.
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WO/2001/032358A2 |
The invention relates to a method and a device for rounding edges (6). An erosive liquid enables to round edges (6) even at points that are difficult to access or have a complicated geometry.
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WO/2001/029145A1 |
Abrasive materials comprising silica-coated transitional alumina particles with an average particle size of less than 50 nanometers and a BET surface area of at least 50 m2/gm are useful in CMP processes either in the form of slurries or...
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WO/2001/025505A1 |
The present invention relates to a cemented carbide wear part with a wear surface with improved friction and wear properties. This has been obtained by providing the wear surface with a surface layer with a thickness of 0.5 $g(m)m to 25 ...
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WO/2001/024969A2 |
The present invention is a fluid dispensing fixed abrasive polishing pad CMP system and method that utilizes fixed abrasive components (115) to remove a portion or entire layer of a wafer while dispensing a fluid without suspended abrasi...
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WO/2001/023485A1 |
To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface...
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WO/2001/023139A1 |
A polishing pad is treated for surface conditioning by exposing a polishing surface on the pad to a chemical solvent having a solubility parameter that differs by less than about twenty percent from a solubility parameter of the material...
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WO/2001/019490A1 |
The present invention comprises a process for filtering a slurry and a filter cartridge construction for filtering a slurry having a filtration medium formed of a depth filter such as a cylindrical seamless fibrous depth filter comprisin...
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WO/2001/017724A2 |
The present invention is an ultrasonic transducer slurry dispensing device (110) and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fa...
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WO/2001/014496A1 |
A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinit...
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WO/2001/012741A1 |
The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising: i) a liquid carrier, ii) at least one oxidizing agent, iii) at least one polishi...
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WO/2001/012740A1 |
The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polis...
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WO/2001/012739A1 |
Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.
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WO/2001/006553A1 |
A process for reducing the incorporation of copper into a semiconductor single-crystal silicon wafer during polishing includes the steps of: a) adding a copper-controlling additive to a polishing mixture containing copper, the copper-con...
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