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WO/2023/070639A1 |
In certain aspects, a memory device includes a vertical transistor, a storage unit, and a bit line. The vertical transistor includes a semiconductor body extending in a first direction. The semiconductor body includes a doped source, a d...
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WO/2023/072028A1 |
Disclosed in the embodiments of the present application are a music caching method and apparatus, and an electronic device and a storage medium. The method comprises: in response to a music playing instruction being received, determining...
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WO/2023/070845A1 |
Provided in the present disclosure are a storage array structure testing method and apparatus, and a storage medium. The method comprises: corresponding to each preset test mode, writing storage data into a storage array to be tested, wh...
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WO/2023/076764A1 |
Methods, systems, and devices for techniques for indicating row activation are described. A memory device may receive an indication associated with an activation command, which may enable the memory device to begin some aspects of an act...
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WO/2023/071144A1 |
A memory structure and a memory, which relate to the technical field of integrated circuit manufacturing. The memory structure comprises: a plurality of storage arrays (11), which are arranged in parallel in a first direction and extend ...
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WO/2023/070614A1 |
A waveform driving device (212) for a tester channel (210) includes a waveform generator (404), a bit map register (402), and an output logic circuit (406). The waveform generator (404) is configured to generate a waveform signal based o...
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WO/2023/076830A1 |
A stacked memory device comprises a stack of dies including respective core memories. An interface die in the stack includes interface circuitry for interfacing between a data bus coupled to a memory controller and the respective core me...
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WO/2023/070337A1 |
The present application relates to the technical field of storage. Provided is a single-port memory, which can solve the existing problem of the read speed of a single-port memory being slow. The single-port memory comprises storage unit...
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WO/2023/073488A1 |
The present invention provides a novel display device. The display device comprises a first layer and a second layer on the first layer. The first layer comprises a functional circuit. The second layer comprises a display unit including ...
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WO/2023/076671A1 |
A memory transparent in-system built-in self-test may include performing in-system testing on subsets of memory cells over one or more test intervals of one or more test sessions. A test interval may include copying contents of a subset ...
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WO/2023/076124A1 |
A trace gimbal is described herein. In some embodiments, the trace gimbal includes outer struts including a front outrigger at a distal end of the trace gimbal and a rear outrigger at a proximal end of the trace gimbal. The front outrigg...
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WO/2023/069145A1 |
A non-volatile storage apparatus comprises one or more memory die assemblies, each of which includes an inference circuit positioned in the memory die assembly. The inference circuit is configured to use a pre-trained model (received pre...
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WO/2023/065004A1 |
There is provided a light detection and ranging (LiDAR) system and a method of operation of same. The LiDAR system is a neuromorphic LiDAR system-on-chip (SOC) may include a CMOS chip that includes a field analog vision (FAV) module for ...
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WO/2023/067367A1 |
The present disclosure relates to a memory device comprising an array including a plurality of memory cells and an operating unit, the operating unit comprising an encoding unit configured to store user data in a plurality of memory cell...
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WO/2023/066643A1 |
An approach to provide a semiconductor structure for a phase change memory cell with a first liner material (30) surrounding a sidewall of a hole in a dielectric material (16) where the hole in the dielectric is on a bottom electrode (15...
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WO/2023/067686A1 |
This memory device is provided with a page formed from multiple memory cells arranged in columns on a substrate, and sets, during a page write operation, the voltage of a channel semiconductor layer to a first data retention voltage by c...
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WO/2023/067748A1 |
A memory device according to the present invention is provided with a page which is composed of a plurality of memory cells that are arranged in columns on a substrate. This memory device performs: a page write operation for holding a ho...
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WO/2023/069147A1 |
A control circuit connected to non-volatile memory cells applies a programming signal to a plurality of the non-volatile memory cells in order to program the plurality of the non-volatile memory cells to a set of data states. The control...
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WO/2023/069935A1 |
In accordance with some embodiments of the present disclosure, an apparatus for performing convolution operations is provided. The apparatus includes a first crossbar circuit comprising a first plurality of cross-point devices; a second ...
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WO/2023/068143A1 |
This electronic device comprises a housing and a jack component. The jack component is housed in the housing for connecting a plug of an external device. The jack component comprises a body portion and a ventilation hole. The body portio...
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WO/2023/069867A1 |
Various embodiments include a memory device that is capable of performing memory access operations with reduced power consumption relative to prior approaches. The memory device receives early indication as to whether a forthcoming memor...
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WO/2023/068833A1 |
Disclosed are a 3-dimensional flash memory and an operation method therefor.
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WO/2023/065596A1 |
The present invention provides an MRAM and a manufacturing method therefor. The MRAM comprises a first substrate and a second substrate, a read-write control circuit being formed on the first substrate, and a magnetic tunnel junction arr...
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WO/2023/069183A1 |
Memory devices (100) may perform read operations and write operations with different bit error correction rates to satisfy a bit error correction rate. However, improving the bit error correction rate of the memory device (100) using a s...
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WO/2023/067770A1 |
This magnetic domain wall movement element comprises a wiring layer that includes a first ferromagnetic layer and extends in a first direction, a second ferromagnetic layer, and a spacer layer interposed between the wiring layer and the ...
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WO/2023/065272A1 |
A memory device includes a plurality of banks, each bank including memory cells, a plurality of cache modules, each cache module configured to store an address and a data of the respective bank, and a plurality of control modules, each c...
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WO/2023/070127A1 |
A memory stick configured for use with a processor in a computer is provided. The memory stick includes a printed circuit board with first and second sides, each of the first and second sides including eighteen memory chips, each of the ...
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WO/2023/064548A1 |
Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a fi...
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WO/2023/064055A1 |
Some memory dies in a stack can be connected externally to the stack and other memory dies in the stack can be connected internally to the stack. The memory dies that are connected externally can act as interface dies for other memory di...
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WO/2023/064855A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments, wherein the unencoded data file is a dataset for use with an EHR process; mappi...
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WO/2023/064829A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments wherein the unencoded data file is a dataset for use with a direct-coupled commu...
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WO/2023/064862A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments, wherein the unencoded data file is a dataset for use with a blockchain process;...
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WO/2023/063733A1 |
The present invention relates to a stateful logic-in-memory using silicon diodes, and the stateful logic-in-memory using silicon diodes according to an embodiment of the present invention comprises a plurality of silicon diodes each of w...
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WO/2023/064827A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments wherein the unencoded data file is a dataset for use with a short-range wireless...
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WO/2023/060475A1 |
A spintronic device, a storage unit, a storage array, and a read-write circuit, applied to the technical field of integration. The spintronic device comprises: bottom electrodes (101, 104); a spin-orbit coupling layer (102) provided on t...
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WO/2023/061036A1 |
A writing method and apparatus for an MRAM, and a circuit. The method comprises: when a 0 writing operation is performed on an MRAM, setting a resistance value of a reference resistor to be a first resistance value; within a write period...
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WO/2023/064828A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments wherein the unencoded data file is a dataset for use with a long-range wireless ...
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WO/2023/064310A1 |
Methods and devices for driving a laser diode are disclosed herein. An example method includes a boost regulator outputting a maximum boost voltage to drive a laser diode that is configured to output light within a wavelength range of 49...
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WO/2023/064244A1 |
Methods and systems are disclosed for performing operations for deforming an external mesh. The operations comprise receiving a video that includes a depiction of a real -world object. The operations comprise generating a three-dimension...
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WO/2023/064839A1 |
An electronic assembly for handling a storage module is provided. The electronic assembly includes an open frame structure having a front frame including a front opening configured to receive air, and two side rails coupled to opposite s...
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WO/2023/062987A1 |
As a lens barrel with a lens such that it is possible to improve a light reception amount at a light-receiving element in a configuration wherein a portion of light emitted from a light source is reflected by a half mirror and received b...
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WO/2023/064826A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments; mapping each of the plurality of file segments to a portion of a dictionary fil...
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WO/2023/063621A1 |
A processor included in an electronic device may be configured to: display an audio input selection screen related to a plurality of audio inputs in a multiple camera recording mode; receive a first user input for selecting an external e...
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WO/2023/064842A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments, wherein the unencoded data file is a dataset for use with a satellite-based com...
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WO/2023/064151A1 |
A memory is provided that includes a write multiplexer, which multiplexes among a plurality of bit line columns. The multiplexer includes a positive boost circuit that applies a positive boost to a voltage at the gates of transistors to ...
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WO/2023/064865A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments, wherein the unencoded data file is a dataset for use with a disaster recovery p...
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WO/2023/064729A1 |
A system and method for efficiently capturing data by sequential circuits across multiple operating conditions are described. In various implementations, an integrated circuit includes multiple signal arrival adjusters both at its I/O bo...
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WO/2023/064852A1 |
A computer-implemented method, computer program product and computing system for: processing an unencoded data file to identify a plurality of file segments, wherein the unencoded data file is a dataset for use with an ML process; mappin...
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WO/2023/064694A1 |
Methods, systems, and devices for cross point array architecture for multiple decks are described. A memory array may include multiple decks, such as six or eight decks. The memory array may also include sockets for coupling access lines...
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WO/2023/059772A1 |
Memory devices and methods for operating the same are provided. Generally, the device includes an array of multibit-memory-cells, each operable to store multiple bits in separate locations of a charge-trapping layer, and control-circuitr...
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