Title:
METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2004279570
Kind Code:
A
Abstract:
To form a desired pattern on a substrate to be processed by forming a resist pattern having no tilt or collapse, and to manufacture a semiconductor device by using the method for forming a pattern.
An antireflection film 2 containing an acidic substance or a basic substance is formed on a semiconductor substrate 1, and a chemically amplifying resist film 3 containing an acid generating agent is formed on the antireflection film 2. The resist film 3 is irradiated with exposure light through a specified mask, heated and developed to form a resist pattern 8. The cross section of the resist pattern 8 has structure composed of a tapered part 8a in contact with the antireflection film 3 and a square part 8b on the tapered part 8a.
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Inventors:
IRIE SHIGEO
Application Number:
JP2003068379A
Publication Date:
October 07, 2004
Filing Date:
March 13, 2003
Export Citation:
Assignee:
SEMICONDUCTOR LEADING EDGE TEC
International Classes:
G03F7/039; G03F7/11; G03F7/26; H01L21/027; (IPC1-7): G03F7/26; G03F7/039; G03F7/11; H01L21/027
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Atsuko Oaku
Hideki Takahashi
Atsuko Oaku
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