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Title:
METHOD OF PRODUCING SUBLIMABLE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2014034504
Kind Code:
A
Abstract:

To provide a method of producing a sublimable single crystal by which cracking of the sublimable single crystal such as SiC due to sublimation and thermal stress of a surface of the single crystal can be suppressed.

A gas generation source 12 capable of generating a gas including a component constituting a sublimable single crystal is arranged in a container 10' and a sublimable single crystal 18' is arranged at a position opposed to the gas generation source 12. Then the sublimable single crystal 18' is annealed while given a temperature gradient ΔT so that the gas generation source 12 is at a higher temperature. After the annealing, a crystal may be further grown on a growth surface.


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Inventors:
GUNJISHIMA TSUKURU
SUGIYAMA NAOHIRO
URAGAMI YASUSHI
MASUDA TAKASHI
KOBAYASHI MASAKAZU
Application Number:
JP2012177834A
Publication Date:
February 24, 2014
Filing Date:
August 10, 2012
Export Citation:
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Assignee:
TOYOTA CENTRAL RES & DEV
DENSO CORP
SHOWA DENKO KK
International Classes:
C30B29/36; C30B33/02
Domestic Patent References:
JP2005179155A2005-07-07
JP2007290880A2007-11-08
JP2005225710A2005-08-25
JP2011051861A2011-03-17
JPH11246297A1999-09-14
JP2010531803A2010-09-30
JP2005132703A2005-05-26
JP2011219296A2011-11-04
JP2010064919A2010-03-25
JP2006290705A2006-10-26
Foreign References:
WO2012079439A12012-06-21
US7767022B12010-08-03
Attorney, Agent or Firm:
Fumio Hatakeyama



 
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