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WO/2016/038995A1 |
The present invention provides a polishing composition which can achieve a high polishing rate against a copper-containing layer and can simultaneously prevent the dissolution of a cobalt-containing layer during the polishing of an objec...
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WO/2016/039265A1 |
A polishing composition for polishing a work including an oxide film and a nitride film, the composition having a pH of 2.0 or higher and containing silica that shows a positive zeta potential.
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WO/2016/038752A1 |
The present invention relates to a holding pad for holding a member to be polished. A holding pad according to the present invention comprises a holding layer. This holding pad is characterized in that: the holding layer has a template f...
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WO/2016/039334A1 |
Provided is a polishing pad which is capable of achieving sufficient polishing accuracy if used for mirror finish polishing. This polishing pad 1 is obtained by bonding a polishing film 9 to the outer circumferential surface of a circula...
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WO/2016/038771A1 |
A polishing composition comprising metal oxide particles as abrasive grains, wherein the metal oxide particles include those in which the half-value width of the peak portion at which the diffraction intensity in a powder X‐ray diffrac...
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WO/2016/035499A1 |
The present invention relates to a polishing method and polishing device for performing chemical treatment of a substrate prior to polishing and between polishings for semiconductor wafers and other substrates. The polishing method for p...
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WO/2016/035250A1 |
The purpose of the present invention is to provide a method for manufacturing a polishing composition for which dispersion stability as an undiluted solution is good and which even when diluted, for example, at a high ratio, is able to a...
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WO/2016/037143A1 |
An apparatus, system, and method using an elastic biasing element in combination with an encoder arrangement for precise control of force or torque applied to a moving object, is applied for controlling a feed force applied to an abrasiv...
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WO/2016/035673A1 |
To improve accuracy of polishing end point detection. Disclosed is an end point detection method whereby an end point is detected on the basis of a drive current to be supplied to a drive unit (a first electric motor or a second electric...
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WO/2015/146320A9 |
A single-crystal silicon carbide substrate (1) which includes a first main surface (1b) and a second main surface (1a) on the reverse side from the first main surface (1b). The first main surface (1b) has a maximum diameter of 100 mm or ...
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WO/2016/031310A1 |
This invention is provided with: a first polishing step for polishing the surface of a wafer (W) while a rough-polishing polishing solution (224) is fed onto the polishing surface of a rough-polishing polishing cloth (223); a protective ...
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WO/2016/031143A1 |
Provided is a polishing pad capable of removing waviness on a resin-coated surface of an object to be polished having a curved surface. This polishing pad (10) is provided with a structure (40, 50) which has a polishing surface (30) made...
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WO/2016/033253A1 |
A cover for an electronic device (100) and methods of forming a cover (112) is disclosed. The electronic device (100) may include a housing (102), and a cover (112) coupled to the housing (102). The cover (112) may have an inner surface ...
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WO/2016/031485A1 |
The present invention provides a polishing composition with which it is possible to adequately control the polishing rate with respect to a material having a low relative dielectric constant. The present invention is a polishing composit...
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WO/2016/031142A1 |
A polishing method capable of removing waviness on a resin-coated surface having a curved surface is provided. The resin-coated surface having the curved surface is polished using a polishing pad (10) having a polishing surface (30) made...
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WO/2016/027903A1 |
The present invention provides a holder for a polishing device which prevents a polishing pad from being damaged while also suppressing sagging of an edge of an object to be polished and detachment thereof, and which also prevents a fram...
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WO/2016/024624A1 |
Taking into consideration the situation that conventional α-alumina particles for polishing have not been sufficient in terms of polishing speed and with regards to mirror surface processing, provided is an α-alumina for polishing that...
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WO/2016/021254A1 |
[Problem] To provide a composition for polishing a titanium alloy material with which it is possible to polish a titanium alloy material at a high polishing rate and obtain a polished titanium alloy material having excellent surface smoo...
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WO/2016/021708A1 |
A polishing agent for tungsten, the polishing agent containing abrasive grains, hydrogen peroxide, a silicomolybdic acid compound, and a water-soluble polymer.
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WO/2016/021325A1 |
A polishing liquid for CMP according to the present invention contains abrasive grains, a first additive, a second additive and water. The first additive is a 4-pyrone compound represented by general formula (1), and the second additive ...
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WO/2016/021317A1 |
The present invention addresses the problem of providing a urethane composition with excellent heat resistance and with which very hard moldings can be obtained. The present invention provides: a urethane composition comprising a base re...
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WO/2016/021094A1 |
Provided is a method for polishing a work piece, whereby the amount of polishing of the work piece can be controlled with higher precision. In this method for polishing a work piece, a work piece (20) is held between an upper surface pla...
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WO/2016/021117A1 |
A final polishing method comprising using: a polishing agent which contains colloidal silica, ammonia and hydroxyethyl cellulose, and in which the primary particle diameter of the colloidal silica is 20 nm or more and less than 30 nm, th...
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WO/2016/017819A1 |
Provided are a method for producing a polishing slurry, polishing abrasive grains, and a polishing slurry with which polishing rate can be improved and the occurrence of damage to a glass substrate can be suppressed. Further provided is ...
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WO/2016/017063A1 |
The present invention is a method for polishing a germanium wafer having a surface made of germanium, in which a hydrogen peroxide solution is added to a first polishing slurry, which is an alkaline aqueous solution containing colloidal ...
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WO/2016/009629A1 |
Provided is a polishing composition whereby polishing rate can be enhanced while good surface quality is realized. The present invention provides a polishing composition including silica particles as abrasive grains and a basic compound ...
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WO/2016/006553A1 |
A CMP polishing liquid that is for polishing an insulating material and that contains cerium oxide particles that satisfy conditions (A) and (B), a 4-pyrone-based compound, and water. Condition (A): The average particle size (R) of the c...
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WO/2016/006631A1 |
An embodiment of the present invention relates to a CMP polishing solution that is to be used for polishing a surface to be polished, the surface including at least a cobalt-containing portion and a metal-containing portion that contains...
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WO/2016/002707A1 |
Provided are: a gallium oxide substrate production method whereby the occurrence of defects can be reduced and a gallium oxide substrate can be obtained from an ingot of monocrystalline gallium oxide; and a gallium oxide substrate having...
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WO/2016/000277A1 |
A fiber end-surface grinder comprises a housing (1). The top of the housing is provided with a fiber fixing module (3). The bottom of the housing is provided with a base (4) capable of rotating relative to the housing. The base is provid...
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WO/2015/198561A1 |
In order to provide is a composition for polishing silicon wafers that has excellent haze-reduction performance and low aggregation characteristics, this composition for polishing silicon wafers includes an amide group-containing polymer...
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WO/2015/194092A1 |
This automatic handling apparatus is characterized by being provided with: a suction head for applying suction to and holding workpieces; an arm which is connected to the suction head, and which moves the suction head; and a stage upon w...
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WO/2015/192814A1 |
A dual copper plate lapping process for a sapphire substrate, comprising: lapping a sapphire substrate disposed between a top lapping plate and a bottom lapping plate; the lapping plates are copper plates having a rough surface and are u...
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WO/2015/194136A1 |
Provided is a method for polishing a silicon wafer with which it is possible to effectively realize a high grade surface. The provided method for polishing a silicon wafer includes an intermediate polishing step for polishing using a pol...
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WO/2015/195488A1 |
Polishing pads having porogens with liquid filler and methods of fabricating polishing pads having porogens with liquid filler are described. In an example, a polishing pad for polishing a substrate includes a polishing body having a pol...
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WO/2015/194278A1 |
The purpose of the present invention is to provide a polishing pad that is capable of achieving a good balance between processing efficiency and finish flatness at high levels. A polishing pad according to the present invention has a bas...
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WO/2015/190065A1 |
To provide a polishing composition which exhibits excellent performance of eliminating a bulge in the periphery of a hard laser mark. Provided is a polishing composition for silicon wafers. This polishing composition contains silica part...
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WO/2015/182757A1 |
This polishing pad is configured so that a plastic deformation area (A) that is calculated using the mathematical formula (1) indicated below is 665 or less when the tensile stress of a polishing layer directly prior to breakage when ten...
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WO/2015/182882A1 |
The present invention relates to a high-strength alloy-containing polishing head of a CMP apparatus that can fundamentally prevent cracks of a ceramic material by improving the structure of a circular perforated plate constituting the po...
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WO/2015/182756A1 |
One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the polishing liquid for CMP has a half-value width of the main peak appearing in the 2θ = 27.000-29.980...
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WO/2015/178476A1 |
This polishing solution for metal films includes: a methacrylic-acid-based polymer having a weight average molecular weight of at least 20,000; polishing particles; and an aqueous solvent.
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WO/2015/178289A1 |
Provided is a polishing pad whereby minute defects to be detected after polishing a subject to be polished can be sufficiently reduced in the cases where measurement with a particle size equal to or smaller than 26 nm is performed, and e...
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WO/2015/178110A1 |
The present invention simplifies airbag calibration work. The pressure calibration jig (400) according to the present invention is a pressure calibration jig for calibrating pressures applied to a plurality of airbags (310-1 through 310-...
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WO/2015/174375A1 |
Disclosed is an apparatus for replacing a polishing table that is used in a polishing apparatus for polishing substrates such as wafers. This polishing table replacement apparatus (10) is an apparatus for removing a polishing table (3) f...
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WO/2015/170436A1 |
The present invention is a polishing agent for chemical mechanical polishing (CMP) which comprises abrasive grains, a protective-film formation agent, and water, characterized in that the protective-film formation agent is a copolymer of...
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WO/2015/170743A1 |
This polishing solution composition for a sapphire plate contains alumina particles, an anionic polymer, and an aqueous medium. One example of a manufacturing method for a sapphire plate according to the present invention includes a step...
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WO/2015/170556A1 |
A polishing carrier that comprises a laminate comprising base material layers and resin layers, wherein: the base material layers are formed of an organic fiber assembly impregnated with a resin; the resin layers contain not the aforesai...
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WO/2015/163256A1 |
The purpose of the present invention is to provide a method for polishing a silicon carbide substrate that allows the silicon carbide substrate to be polished at high speed and warping of the polished silicon carbide substrate surface to...
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WO/2015/163164A1 |
The present invention relates to a polishing method and polishing apparatus, whereby a substrate such as a wafer is polished while a film thickness is measured on the basis of optical information included in reflected light from the subs...
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WO/2015/163136A1 |
This abrasive pad (13) is used to abrade a convex curving surface portion (1a) of an abraded article (1) having a convex curving surface portion, wherein the abrasive pad is characterized in that an annular concave abrading portion (13a)...
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