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WO/2016/170942A1 |
A treatment composition for chemical mechanical polishing which is for treating a work in which a metal-containing wiring layer has been disposed, the treatment composition comprising (A) a nitrogenous compound, (B) at least one compound...
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WO/2016/166928A1 |
The present invention is a manufacturing method for a polishing head, the manufacturing method comprising: forming a groove in a lower end surface of an intermediate plate, the groove extending from an injection port for an incompressibl...
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WO/2016/168231A1 |
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the ...
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WO/2016/163063A1 |
Disclosed is a polishing device that is provided with: a polishing head that transfers a wafer downward, while holding the wafer; and a polishing cloth that polishes a surface of the wafer transferred downward by means of the polishing h...
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WO/2016/163352A1 |
The present invention relates to a film thickness measuring method that detects a film thickness by analyzing optical information contained in light reflected from a substrate. The film thickness measuring method includes the steps of ge...
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WO/2016/158324A1 |
[Problem] The present invention addresses the problem of providing a polishing composition which has a sufficiently improved polishing rate for an object to be polished which has a silicon-oxygen bond, such as a silicon oxide film, or a ...
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WO/2016/159167A1 |
The present invention addresses the problem of providing a silica-based composite fine-particle dispersion with which it is possible to polish silica films, Si wafers, and even hard-to-process materials at high speed, and simultaneously ...
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WO/2016/158348A1 |
The present invention is an abrasive pad formed of foamed polyurethane, the proportion of the S phase content of the foamed polyurethane exceeding 70%, as determined by pulsed NMR at 25°C.
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WO/2016/146557A1 |
A specimen mover (100) for a grinding and/or polishing machine (120) is disclosed. The specimen mover (100) is configured for rotating one or more specimens (50) in abutment with a preparation surface (75) carried by the grinding and/or ...
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WO/2016/147968A1 |
Provided is a recovery method for an abrasive, with which it is possible to recover a highly pure abrasive from a recovery slurry that contains a used abrasive, by a simple method. This recovery method for an abrasive for recovering an a...
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WO/2016/143323A1 |
Provided are a composition for grinding, which can achieve both excellent surface quality and high grinding speed, and a method for grinding a silicon substrate. The composition for grinding contains abrasive grains, a basic compound, an...
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WO/2016/142237A1 |
Carrier onto which a wafer can be temporarily bonded. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a metal foil or a metal sheet. The plate shaped laminate co...
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WO/2016/142240A1 |
A carrier is disclosed onto which a wafer can be temporarily bonded. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a foil, a sheet or a plate. The plate shaped...
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WO/2016/142238A1 |
A carrier is disclosed onto which a wafer can be temporarily bonded. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a foil, a sheet or a plate. The plate shaped...
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WO/2016/142239A1 |
A carrier is disclosed onto which a wafer can be temporarily bonded. The carrier comprises a plate shaped laminate. The plate shaped laminate comprises a first layer. The first layer comprises a foil, a sheet or a plate. The plate shaped...
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WO/2016/143797A1 |
This polishing agent for resin polishing contains: abrasive particles; a water-soluble polymer that has an ether bond; an organic solvent; and water. Therein, the abrasive particles have a positive charge within the polishing agent, and ...
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WO/2016/140246A1 |
A CMP polishing liquid for polishing a ruthenium-based metal, wherein: the CMP polishing liquid contains abrasive grains, a metal oxidant, and water; the metal oxidant has an oxidation-reduction potential accompanied by exchange of hydro...
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WO/2016/136342A1 |
[Problem] To provide a polishing composition with which it is possible, in at least one of the acidic, neutral, and basic ranges, to sufficiently control the polishing rate for an object to be polished having a silicon-silicon bond. [Sol...
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WO/2016/136177A1 |
A composition for polishing, which is used for polishing of the surface of an object to be polished, said surface containing an oxide of a metal or a semimetal or a composite material of these oxides, and which contains at least water an...
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WO/2016/136314A1 |
A cerium-free polishing material is provided which has an excellent polishing speed, and which can cut production costs and has improved production efficiency; also provided is a production method for conveniently obtaining said polishin...
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WO/2016/136162A1 |
Provided is a polishing composition that, even when used for polishing an object to be polished containing a transition metal having a standard electrode potential between -0.45V and 0.33V inclusive, is less likely to etch or corrode the...
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WO/2016/136447A1 |
A polishing method is provided which yields a negatively charged substrate with excellent surface smoothness with good productivity while achieving high polishing speeds. Also provided is a method for achieving a negatively charged subst...
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WO/2016/135787A1 |
Provided are a single-wafer one-face polishing method and a single-wafer one-face polishing apparatus that make it possible to improve the flatness of semiconductor wafers and to suppress variations in the flatness. A single-wafer one-fa...
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WO/2016/132952A1 |
[Problem] To provide a polishing composition with which it is possible, in at least one of the acidic, neutral, and basic ranges, to sufficiently suppress the polishing rate for an object to be polished having a silicon-nitrogen bond, su...
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WO/2016/132951A1 |
[Problem] To provide a polishing composition with which it is possible, in at least one of the acidic, neutral, and basic ranges, to sufficiently control the polishing rate for an object to be polished having a silicon-oxygen bond, such ...
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WO/2016/132676A1 |
The purpose of the present invention is to polish a silicon wafer, while reducing LPD and preventing contamination of metals, especially contamination of nickel and copper, during the final polishing of the silicon wafer. Provided is a c...
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WO/2016/129508A1 |
Provided is a polishing composition with which simple silicon substances can be polished at higher speeds. The present invention is a polishing composition to be used for polishing objects to be polished that comprise a simple silicon ...
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WO/2016/129476A1 |
To provide composite particles for polishing, which have high polishing rate and are obtained by having silica particles support a metal oxide, and which enables the achievement of a smooth polished surface. Composite particles for polis...
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WO/2016/129172A1 |
Provided are: an indium phosphorus substrate which is capable of making uniformity of an epitaxial film to be grown on the substrate excellent, and improving PL characteristics and electrical characteristics of an epitaxial wafer wherein...
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WO/2016/129164A1 |
Provided is a glass article which has excellent surface smoothness. The glass article 1 comprises a polished main surface, the arithmetic average roughness (Ra) of the polished main surface being 0.2 nm or less.
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WO/2016/129215A1 |
Provided is a polishing method with which surface defects on a silicon wafer can be further reduced. A method for polishing a silicon wafer, characterized in including a polishing step and a surface treatment step performed after the pol...
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WO/2016/125423A1 |
The present invention is a method for arranging a polishing cloth for polishing silicon wafers, wherein after a urethane foam polishing cloth is attached to a polishing machine and dressing is performed, dummy polishing is executed. Afte...
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WO/2016/125404A1 |
Provided are a method for manufacturing an SiC semiconductor device whereby defects in an SiC epitaxial film formed on an SiC substrate can be reduced, and an SiC semiconductor device obtained by the method. A method for manufacturing an...
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WO/2016/126657A1 |
Methods for strengthening edges of a laminated glass article comprising a glass core layer positioned between a first glass clad layer and a second glass clad layer are disclosed. The methods may comprise polishing the cut edges of the l...
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WO/2016/122888A1 |
Low density polishing pads and methods of fabricating low density polishing pads are described. In an example, a polishing pad (222) for polishing a substrate includes a polishing body having a density approximately in the range of 0.4 -...
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WO/2016/120516A1 |
The invention relates to a polishing pad for polishing a surface, material for a polishing pad and a method for manufacturing material for a polishing pad. A polishing pad according to an embodiment comprises a backing layer and a polish...
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WO/2016/117559A1 |
A polishing composition derived from a sulfonic acid-modified aqueous anionic sol produced by a production method including: a first reaction step in which water and sulfonic acid-modified colloidal silica obtained by immobilizing sulfon...
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WO/2016/117485A1 |
One problem addressed by the invention of the present application is to perform a buffing-amount simulation that considers the pressure concentration that is generated in the vicinity of the edge of a substrate to be polished when a smal...
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WO/2016/117560A1 |
[Problem] To provide modified colloidal silica capable of improving the stability of the polishing rate over time when used as abrasive particles in a polishing composition for polishing an object to be polished that includes a material ...
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WO/2016/111335A1 |
The present invention relates to a CMP device provided with a polishing pad surface property measuring device which measures the surface properties of a polishing pad used to polish a substrate. This CMP device is provided with: a polish...
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WO/2016/111165A1 |
The present invention relates to an abrasive-grain slurry containing both an abrasive material and cellulose nanofibers and to a process for producing the slurry. The purpose of the present invention is to provide an abrasive-grain slurr...
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WO/2016/103576A1 |
Provided is a polishing composition that is inexpensive and can be used to impart a high-quality mirror finish to ceramic. The polishing composition contains abrasive grains made of carbide, and is used for polishing ceramic.
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WO/2016/104611A1 |
This polishing solution composition for silicon oxide film polishing polishes a silicon oxide film on a polysilicon film, and includes: a water-soluble polymer (component A) that includes a polyethylene glycol chain; ceria-coated silica ...
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WO/2016/103575A1 |
Provided is a polishing composition which is inexpensive and capable of imparting a high-quality mirror finish to a ceramic. The polishing composition according to the present invention contains abrasive grains, has a pH of 6.0 to 9.0, a...
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WO/2016/103862A1 |
A circular polishing pad of the present invention is a circular polishing pad including a circular polishing layer. The circular polishing pad is characterized in that: the circular polishing layer has concentric grooves and one cross-sh...
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WO/2016/098817A1 |
A CMP polishing liquid that is used to polish a surface to be polished that has at least a cobalt-containing section and a metal-containing section that contains a metal that is not cobalt. The CMP polishing liquid contains polishing par...
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WO/2016/098501A1 |
The objective of the present invention is to provide a polishing pad which is easy to produce and with which, when mounting the polishing pad to a polishing plate, a release film on an adhesive layer surface provided on the polishing pad...
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WO/2016/098500A1 |
The objective of the present invention is to provide a method of stably producing, in large volume, a light transmitting region that has a desired light transmissivity in a desired wavelength. This manufacturing method of a light transmi...
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WO/2016/095668A1 |
Provided is a cylindrical-component grinding device, comprising a workpiece advancing apparatus (2) and a grinding disc apparatus (1); the grinding disc apparatus comprises first and second grinding discs (11, 12); the two grinding discs...
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WO/2016/095667A1 |
Provided is a double-disc straight groove cylindrical-component surface grinding disc, comprising a first grinding disc (11) and a second grinding disc (12); the two grinding discs rotate relative to each other; the working face (111) of...
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