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WO/2009/099627A1 |
A nano-imprint lithography process includes forming a multiplicity of hydroxyl groups on a surface of a substantially inorganic nano-imprint lithography template, heating the template, and reacting a pre-selected percentage of the hydrox...
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WO/2009/093594A1 |
The position of a surface to be measured is detected with high accuracy without being influenced by the movement of an optical member. A surface position detecting device comprises a reference member (9) having a reference surface (9a) p...
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WO/2009/090389A1 |
A method of providing registration holes in a workpiece (10) having a defined working area (11) including forming a raised portion (12) on the part of the workpiece not contained within the working area for providing a datum (16) in a fi...
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WO/2009/085004A1 |
The present invention provides a method of producing a two-sided microstructured product and a registration structure that can be used for the method. The method comprises the steps of: (800) providing primary product features (80) at a ...
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WO/2009/082226A1 |
A lithographic apparatus configured to project a patterned radiation beam onto a substrate, comprising: a support configured to hold a patterned object; and a measurement system configured to detect orientations and/or densities of user ...
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WO/2009/075970A1 |
A method includes scanning a radiation beam with respect to a multiphoton curable photoreactive composition. The radiation beam includes a power sufficient to at least partially cure a volume of the multiphoton curable photoreactive comp...
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WO/2009/072881A1 |
The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation b...
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WO/2009/067149A1 |
A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and r...
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WO/2009/063736A1 |
An exposure apparatus (100) for efficiently exposing patterns onto corresponding regions of a substrate (Wl). The apparatus includes a first wafer stage (WSTl), a second wafer stage (WST2), an alignment sensor (26) which detects marks of...
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WO/2009/064016A1 |
A surface position detecting apparatus which detects position information of a predetermined surface in an object, comprising a first optical system (51E) which projects light from an oblique direction to the predetermined surface (14a);...
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WO/2009/060999A1 |
On the +X and -X sides of a projection unit (PU), a plurality of Z heads (76, 74) are arranged in parallel to the X-axis, by a distance (WD) half or less than half the effective width of a Y scale so that two Z heads each constantly form...
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WO/2009/060998A1 |
On the +X and -X sides of a projection unit (PU), a plurality of Z heads (76, 74) are arranged in parallel to the X-axis, by a distance (WD) half or less than half the effective width of a Y scale so that two Z heads each constantly form...
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WO/2009/040241A2 |
A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three di...
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WO/2009/028695A1 |
A controller uses two Z heads (ZsR, ZsL), which are positioned above a reflection surface (39Y1, 39Y2) installed on the +X end and the -X end of the upper surface of a table (WTB), to measure the height and tilt of the table (WTB). Accor...
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WO/2009/028696A1 |
Positional information of a wafer stage (WST) in a Z-axis direction and a tilt direction with respect to the XY plane (for example, a θy direction) is measured, using a surface position measurement system, such as, for example, a Z head...
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WO/2009/028698A1 |
A position of a stage (WST) in a perpendicular (Z) direction with respect to a movement plane and a tilt (θy) direction is measured, using a surface position sensor (72k, 74i, 76j) and a Z interferometer (43A, 43B). And, the stage is dr...
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WO/2009/028694A1 |
By moving a wafer stage (WST) while monitoring an XY position of the wafer stage using an interferometer system, and scanning a Y scale (39Y3, 39Y4) in an X-axis direction and a Y-axis direction using a surface position sensor (72k, 74i,...
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WO/2009/028697A1 |
A wafer stage (WST) is moved while monitoring a position using an X interferometer (127) and a Y interferometer (16), and a Z position of a Y scale (39Y1, 39Y2) arranged on the wafer stage upper surface is measured using a sensor (72a to...
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WO/2009/028693A1 |
A controller uses two Z heads (ZsR, ZsL), which are positioned above a reflection surface (39Y1, 39Y2) installed on the +X end and the -X end of the upper surface of a wafer table (WTB), to measure the height and tilt of the wafer table....
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WO/2009/023518A1 |
A method and system characterizing and monitoring an automated inspection system are provided. A method for automatically characterizing an automatic inspection system for photomasks may include removing portions of an optical attenuator...
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WO/2009/008090A1 |
A method for manufacturing a substrate structure for PDP which can improve accuracy of alignment between a transparent electrode and a bus electrode. The method for manufacturing a substrate structure for PDP includes a step for forming ...
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WO/2008/157588A2 |
Methods and systems for forming a displacement scale comprising TIR prisms on a substrate are described. A system for forming the displacement scale includes one or more rollers having a pattern of total internal reflection (TIR) prism f...
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WO/2008/157619A2 |
Methods and systems for determining the displacement of a substrate using a scale comprising TIR scale features are described. A scale that includes a number of total internal reflection (TIR) prisms as scale elements is disposed on the ...
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WO/2008/151107A2 |
An adjustment structure used in conjunction with an imprinting structure is provided. The adjustment structure includes a sample mount for mounting a sample. An actuator mechanism is coupled to the sample mount, the actuator mechanism pr...
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WO/2008/146946A2 |
An exposure method includes measuring coordinates of alignment marks before and after exposing a first wafer to determine a fluctuation amount Δpi of a parameter of the alignment (Steps 201, 204, 205); measuring coordinates of alignment...
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WO/2008/146933A1 |
An exposure method for exposing a bright-dark pattern onto each exposure region of a substrate (W) via a projection optical system (PL) includes a position detection process (S13) for detecting positions of a plurality of microscopic reg...
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WO/2008/142916A1 |
The measuring system comprises an external storage section (26) for storing the tolerance of first and second profile factors defining the design profile of a measurement object (10), a measuring instrument (14) for obtaining the measure...
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WO/2008/139910A2 |
A method for processing data for a mask pattern. The method includes analyzing data (SF) of the mask pattern and specifying a pattern region (BD) having a predetermined shape and a predetermined dimension from the mask pattern. The patte...
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WO/2008/136666A2 |
The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor c...
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WO/2008/132529A1 |
A method is provided for forming an image, such as a chevron or other irregularly shaped image on a media. The method includes operating an imaging head to direct imaging beams to form a first portion of the image on the media while scan...
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WO/2008/126925A1 |
An exposure apparatus for exposing a bright-dark pattern on a substrate (W) via a projection optical system (PL) includes a position detection system (10) which detects a plurality of predetermined positions in a unit exposure field (10f...
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WO/2008/126926A1 |
An exposure method enabling deformation occurring in a unit exposure field (10f) to be measured rapidly and accurately and enabling a plurality of patterns to be superimposed on a substrate (W) with high accuracy. The exposure method of ...
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WO/2008/117444A1 |
A method for aligning the exposure position for lithography processing, in which an effective feedback method can be determined with regard to adjustment of the exposure position, based on the achievement of lithography processing perfor...
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WO/2008/082983A1 |
An embodiment relates generally to an apparatus for reducing defects. The apparatus includes a spindle (115) adapted to hold a wafer (110); and at least two light sources (105 A, 105B) configured to direct light to a top-side and a back-...
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WO/2008/083114A2 |
A hybrid topography mask is designed for facilitating the fabrication of a semiconductor wafer. The hybrid mask includes a substrate having a light receiving surface. The light receiving surface defines a plane. Pluralities of pattern el...
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WO/2008/074998A1 |
An encoder for measuring for position of an object, comprising a light source, and a scale (1) and readhead arranged for relative movement therebetween, the scale (1) including an optical feature (2) and the readhead comprising an optica...
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WO/2008/071268A1 |
The invention relates to a device for measuring lithography masks, comprising a reticle carrier (1) for the lithography mask (2) to be measured, a measuring objective (6) for reproducing, on a detector, a section of the lithography mask ...
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WO/2008/071269A1 |
There is provided a mask metrology apparatus (1) comprising: a mask holder (2) for holding a mask (3) having an object plane with a plurality of marks (4), a mask positioning device (5) for positioning the mask holder in a predetermined ...
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WO/2008/071296A1 |
A method is provided for determining the position of a structure on a carrier, relative to a reference point of the carrier, said method comprising the steps of: a) providing an image including a reference structure; b) recording an imag...
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WO/2008/056735A1 |
A specified clearance is formed between a detection system and a surface plate by force generating apparatuses (122a-122c, 124a-124c, 102) capable of generating a magnetic attraction force and a gas static pressure between a detection sy...
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WO/2008/052405A1 |
An alignment system (5) of a lithographic apparatus of the present invention includes a optical source module (1) for providing a light source for the alignment system (5); an illumination module (2) for transmitting the light to illumin...
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WO/2008/052600A1 |
The present invention relates to a method to determine a position of at least one mark provided on a substrate, comprising the actions of: detecting a first mark on said substrate by using a first detector, detecting a first set of marks...
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WO/2008/048595A2 |
A contact lithography alignment system (500) and methods (100, 200, 400) use nanoscale displacement sensing and estimation (nDSE) 300, 300' to maintain an alignment and compensate for a disturbance of one or more objects (510) during con...
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WO/2008/047818A1 |
A near-field exposure apparatus includes a near-field exposure mask (101), a mechanism configured to place a substrate (102) to be exposed, opposed to the near-field exposure mask, a mechanism (107) configured to perform relative alignme...
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WO/2008/038752A1 |
A laser beam (Ly1, Ly2 or the like) emitted from an encoder body (16Ya, 16Yb or the like) is incident on a wafer table (WTB) from the outside through a PBS (18), and reaches a grating (24) at a point (IAa) positioned just below an exposu...
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WO/2008/030929A1 |
An interferometric-spatial-phase imaging (ISPI) system includes a substrate wafer. An alignment configuration is permanently embedded in tbe substrate wafer. The alignment configuration uses a global coordinate reference system by provid...
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WO/2008/027821A1 |
Squaraine dyes are incorporated into a separation medium in which protein or polypeptide mixtures are separated, which medium also contains a detergent that forms a complex with the polypeptides or proteins. The dyes, upon excitation in ...
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WO/2008/025492A1 |
By taking into consideration tool specific distortion signatures and reticle specific placement characteristics in an alignment control system the control quality of sophisticated APC strategies may significantly be enhanced. Respective ...
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WO/2008/022178A2 |
A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Sepa...
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WO/2008/016651A2 |
Methods of performing lithography include calculating a displacement vector (74) for a lithography tool (50) using an image (60) of a portion of the lithography tool (50) and a portion of a substrate (10) and an additional image (28) of ...
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