| Document |
Document Title |
|
WO/2005/022600A2 |
Disclose are methods, systems, and processor program products for filtering overlay measurements, including generating a residual between a measured overlay displacement (212) and an overlay displacement based on a model of reticle erros...
|
|
WO/2005/022269A2 |
The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer (900, 1250). The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surfac...
|
|
WO/2005/019938A1 |
A system, method and structures employing proportional variable resistors suitable for electrically measuring unidirectional misalignment of stitched masks in etched interconnect layers. In an example embodiment, there is a structure (10...
|
|
WO/2005/015317A1 |
A pattern exposing system comprising a plurality of optical units, a control means (23) delivering a signal for controlling a pattern width being exposed based on pattern data concerning a target exposure pattern to each optical unit, an...
|
|
WO/2005/013006A1 |
The present invention relates to alignment of a writing system and a workpiece. In particular, it relates to alignment to write a second layer pattern on a workpiece that has a first layer pattern, using an SLM. It extends to producing a...
|
|
WO/2005/012990A1 |
Provided is a method for manufacturing a patterned optical retarder including a) forming an alignment layer on a substrate, b) surface aligning an overall surface of the alignment layer (the first aligning step), c) surface aligning only...
|
|
WO/2005/010612A2 |
A dark-field imaging method for detecting defects in reflective lithography masks (e.g., extreme ultraviolet (EUV) masks) used, e.g., in processes for the fabrication of microelectronic devices. A mask blank is coated with a photoresist ...
|
|
WO/2005/010986A1 |
An in-print method capable of transferring a mold pattern on the films by pressing a mold member (40) having the mold pattern formed thereon against the films formed on the principal planes of substrates (50) as workpieces. The plurality...
|
|
WO/2005/008752A1 |
Position shift amounts in the X direction and Y direction are detected between a transfer image of the mark formed by scan exposure under a low-speed scan condition and a transfer image of the mark formed by the scan exposure under a hig...
|
|
WO/2005/008753A1 |
There is disclosed a method for easily creating a template corresponding to a pattern deformation by the optical condition and the process condition pattern and appropriately performing position detection. According to a first method, a ...
|
|
WO/2005/005153A1 |
A printing machine comprises an X-Y table (50) for moving a substrate (30) with respect to a print head (20). During a printing process, the substrate (30) is moved, whereas the print head (20) is intermittently activated to fire ink dro...
|
|
WO/2005/001898A2 |
A method of designing and forming a reticle (404), as well as the manufacture of a semiconductor substrate (410) using the reticle, includes defining a first edge of a reticle layout file. The first edge corresponds to a reference featur...
|
|
WO/2005/001913A1 |
A feedback control part (70a) feedback controls, in accordance with sensing results of a sensor (78), the attitude and position, in the Z-direction, of a wafer stage in response to the movement of the wafer stage, which holds a wafer, in...
|
|
WO/2005/001912A1 |
A plurality of sets of first measurement patterns each including a convex pattern consisting of a resist film and a concave pattern having a space with a shape corresponding to the convex pattern are formed on a first substrate so as to ...
|
|
WO2004027684B1 |
Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission an...
|
|
WO/2004/114382A1 |
A method for forming a pattern is disclosed which comprises a step wherein a fluid film is made from a material with fluidity, a step wherein a pressing surface of a pressing member which has at least one of a projected portion and a rec...
|
|
WO/2004/107042A1 |
A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually (SET1, SET2) and then o...
|
|
WO/2004/099879A2 |
An alignment method for an exposure mask and an object to be exposed, wherein exposure is carried out while the exposure mask having a light blocking film formed at a membrane portion thereof is closely contacted to the object to be expo...
|
|
WO/2004/095135A2 |
An autofocus unit is provided to an immersion lithography apparatus for having a fluid over a target surface of a workpiece and an image pattern projected on this target surface through the fluid. The autofocus unit has an optical elemen...
|
|
WO/2004/092829A2 |
The invention relates to, among other things, a masking arrangement comprising two partial areas (16, 18) each containing a pattern for an integrated circuit arrangement. One partial area (16) is surrounded by an auxiliary pattern frame ...
|
|
WO/2004/092865A2 |
In step (401), a sub-set consisting of an arbitrary umber of shot areas is selected from a plurality of shot areas. In step (403), according to the design value of the position information relating to the shot areas contained in the sub-...
|
|
WO/2004/090979A2 |
An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with and in particular developed on a first layer and a second mark ...
|
|
WO/2004/090635A1 |
A method of producing a photomask (10) that poses a problem with a CD accuracy lowered due to a loading effect; and technique for restricting a loading effect. A method of producing a photomask (10) in which a chromium pattern (21) havin...
|
|
WO/2004/088425A2 |
A micro-imprinting method, and template for use in such a method, in which at least one surface of the template includes an alkyl silane release coating, where the alkyl silane is free of fluorine atoms.
|
|
WO/2004/086143A2 |
Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle o...
|
|
WO/2004/083960A2 |
The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the p...
|
|
WO/2004/079779A2 |
An attenuated phase shift mask (10 or 20) includes a substrate (12 or 22) and an attenuation stack (11 or 21) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (14 or 24) overlying the substrate,...
|
|
WO/2004/079780A2 |
A patterned reflective semiconductor mask (10) uses a multiple layer ARC (24, 26, 28) overlying an absorber stack (22) that overlies a reflective substrate (12, 14). The absorber stack has more than one layer and an upper layer of the ab...
|
|
WO/2004/077155A1 |
Double exposure is conducted using a halftone phase shift mask (11) comprising gate patterns (1), an assist pattern (2a) having a resoluble line width inserted into a part where the distance between the gate patterns (1) is long, and an ...
|
|
WO/2004/077154A2 |
The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift...
|
|
WO/2004/076963A2 |
Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a seco...
|
|
WO/2004/077156A1 |
Data (pattern data) (21) for forming a mask pattern out of mask data (2) is on an octagon. An electron beam mask lithography apparatus has a high resolution, and it thus requires polygonal pattern data on a polygon having more vertexes t...
|
|
WO/2004/077534A1 |
There is provided a positioning method capable of reducing the affect to the throughput and performing non-linear correction of optimal shot arrangement for each wafer. The non-linear error is corrected by performing EGA calculation havi...
|
|
WO/2004/077535A1 |
A projection exposing method capable of minimizing a reticle aligning time to obtain a high throughput even if the transmittance of a projection optical system is reduced or the number of reticle marks increases. A reticle-side reference...
|
|
WO/2004/072735A1 |
A method for correcting a photomask by the optical proximity effect, enabling decrease of the inter-mask difference in the pattern density-dependent error of the line width between a test mask and a corrected mask. The method comprises a...
|
|
WO/2004/072734A2 |
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask h...
|
|
WO/2004/066358A2 |
The present invention generally relates to improved binary half tone ('BHT') photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices)...
|
|
WO/2004/066028A2 |
A method for determining one or more process parameter settings of a photolithographic system is disclosed. The method is performed using a scatterometry tool (258) to measure a latent image of a pattern, a partially developed pattern, o...
|
|
WO/2004/066027A2 |
Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentration of implanted gallium, the transparency can be substantially restored wit...
|
|
WO/2004/065287A2 |
A photoresist layer (417) on a semiconductor wafer (419) is patterned using a mask (401) with an absorbing layer (107) that has been repaired by using an additional light-absorbing carbon layer (105) that collects ions that are used in t...
|
|
WO/2004/063814A2 |
Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize...
|
|
WO2004047156B1 |
Highly-accurate focus adjustment is performed by eliminating adverse affect attributed to reflectivity distribution. Detection light is applied to a measurement position on a substrate and reflected light reflected from the measurement p...
|
|
WO/2004/059699A2 |
A method for substrate eccentricity detection (815) for determining positions on a perimeter of a first substrate (810) by grouping at least three perimeter positions defining one or more circles in case 1 and case 2 and estimating the l...
|
|
WO/2004/059245A1 |
A position deviation system (10) and method detects and corrects position deviations between the optical axis (118) of an optical system (100), such as an exposure apparatus (150), and the center of a curved shaped object, such as a sphe...
|
|
WO/2004/059690A1 |
The present invention provides a new extractor for a micro-column and an alignment method of the aperture of said extractor and an electron emitter for a micro-column. Further, the present invention provides a measuring system, a method ...
|
|
WO/2004/054784A1 |
A method of controlling dimensional variations in patterns formed using imprint lithography includes the steps of defining a region on the wafer in which to produce a recorded pattern by depositing liquid material (100), producing a cont...
|
|
WO/2004/055607A2 |
A apparatus processes an object (19), such as a semi-conductor wafer at accurately controlled positions. The object (19) is supported by a working platform (12) that is moveable along a path. A suspension actuator part (14) attached to t...
|
|
WO/2004/053426A1 |
Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a...
|
|
WO/2004/053954A1 |
An exposure apparatus (EX) carries out an exposure of a substrate (P) by filling the space between a projection optical system (PL) and the substrate (P) with a liquid (50) and projecting an image of a pattern onto the substrate (P) thro...
|
|
WO/2004/049063A2 |
A photomask and method for creating a protective layer on the photomask are disclosed. The method includes placing a photomask including a patterned layer formed on at least a portion of a substrate in a chamber. Oxygen is introduced int...
|
