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WO/2003/010803A1 |
An exposure device (100) having a vertically movable stage device (120) and adapted to effect exposure by projecting a pattern recorded on a hologram mask (130) onto an exposure subject substrate (110) formed with a photosensitive materi...
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WO/2003/010802A1 |
A stage control system (19), while restricting a reduction in a control performance in one stage when an exposure operation is performed in that stage (WST1), performs an alignment operation in the other stage (WST2), thereby restricting...
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WO2001088467A9 |
A method for compensating data age in measurement signals from an interferometer includes measuring a value of the measurement signal and adjusting the measured value based on the measurement signal with a data age adjustment value to co...
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WO/2003/004967A1 |
A position detection apparatus includes comparison area selection means (34) for selecting a comparison area for comparing to a template image indicating an electronic part from an input image, phase difference calculation means (42) for...
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WO/2003/004966A1 |
The invention features an interferometry system (100) that uses a small angular difference in the propagation directions of orthogonally polarized components of an input beam to an interferometer (110). The orthogonally polarized compone...
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WO/2003/003457A2 |
A method for producing a semiconductor device having an alignment mark, the method comprising forming a first dielectric layer within which a trench having predetermined dimensions is etched and depositing a first layer of metal into the...
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WO2000043731A9 |
An alignment system (10) includes two or more alignment devices (28, 30) arranged in close proximity and sharing a common processing device (44). The alignment devices (28, 30) are located adjacent to each other, yet while one substrate ...
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WO/2002/101464A2 |
A method for producing a computer readable definition of photolithographic mask used to define a target pattern is provided. The phase shift mask patterns include phase shift windows, and the trim mask patterns include trim shapes, which...
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WO/2002/097534A2 |
A screen printer apparatus including an alignment apparatus comprises a lower camera located between a printed circuit board (PCB) and a stencil and an upper camera located above the stencil. A batch setup procedure involves the upper ca...
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WO/2002/097363A1 |
A position detection apparatus detecting a position of a mark similar to a template image from an input image has a calculation block. The calculation block includes phase difference calculation means and mark position detection means. T...
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WO/2002/097366A1 |
An X−ray (5a) beamed onto a substrate (15) serving as a circuit board forms a fluorescent image as an alignment mark of the substrate (15) on a scintillator film (19). A visible ray (21a) shone onto a mask substrate (17) forms a projec...
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WO/2002/093464A1 |
A fast multi-resolution template search method (106) uses a manually selected or an automatically selected (102) template set, learned application specific variability (530, 532), and optimized image pre-processing to provide robust, acc...
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WO/2002/093485A1 |
In an alignment or overlay measurement of patterns on a semiconductor wafer (1) an error ocurring during performing a measurement in one of a predefined number of alignment structures (20) in an exposure field (2) of a corresponding pred...
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WO/2002/093567A2 |
Method and apparatus to enable detection of a position of an article, and thereby enable maintenance of a desired position thereof. The apparatus includes an illumination unit, focusing optics (6) and a focus detection unit (8), the focu...
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WO/2002/093626A1 |
An aligning method and an aligner in which a high productivity can be attained by shortening the preparation time before starting alignment when a gas transmitting an exposing light substitutes for the gas around a mask. When a wafer (W)...
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WO/2002/084213A1 |
A method and system to measure misalignment error between two overlying or interlaced periodic structures (13, 15) are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation from a light source (1...
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WO/2002/084719A1 |
An electron beam exposing device characterized by comprising a plurality of individual exposure data storing units for storing shot position data representing the position of each shot pattern which is to be exposed by an electron beam i...
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WO/2002/082188A2 |
A method for substrate alignment on a stepper comprises imposing predetermined corrections on each of a plurality of substrates, a different set of corrections for each substrate. The actual corrections occurring on the substrates are me...
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WO/2002/079882A2 |
In a lithography method with the steps coating (13) a lithography resist onto a wafer, exposing (14) the wafer, stabilizing (16), performing (17) a metrology inspection of the resulting lithography resist pattern, etching, and wet proces...
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WO/2002/077922A1 |
An image detection apparatus (20) detects from an input image a first region similar portion similar to a first region containing a predetermined first mark. The image detection apparatus (20) includes first region candidate portion dete...
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WO/2002/077716A2 |
The lithographic process described herein ivolves aligning a patterned mold with respect to an alignment mark that is disposed on a subrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned...
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WO/2002/077485A1 |
A fluid mount (10) for an exposure apparatus includes a first subsystem (12) and a second subsystem (14). The first subsystem (12) includes a first cylinder (18) and a first piston (20). The first piston (20) moves within the first cylin...
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WO/2002/077911A1 |
Mark detection and position determination are improved by use of directional elongated filters (5102), symmetry, gray scale image processing, structural constraints, and learning. Directional elongated filters are used to pre-process ima...
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WO/2002/069047A1 |
Semiconductor wafers (1, 2), e.g. a lot (10), are exposed after an alignment (20) in a wafer stepper or scanner (35) with each determining their alignment parameters. Using, e.g., a linear formula with tool specific coefficients the over...
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WO/2002/069053A2 |
A method and apparatus for imaging an overlying pattern over an underlying pattern on a substrate, by determining deviations between the actual locations and the nominal locations of predetermined reference targets in the underlying patt...
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WO/2002/069049A2 |
The present invention provides a method and system for simultaneously imaging at least two reticles (104a, 104b) onto a substrate. According to the present invention, the wafer is passed through the exposure sequence once with images fro...
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WO/2002/067055A2 |
Described are imprint lithography templates, methods of forming and using the templates, and a template holder device. An imprint lithography template may include a body with a plurality of recesses on a surface of the body. The body may...
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WO/2002/061367A1 |
A position detecting method, comprising the steps of, based on the imaged results of two linear profiles of a notch, as a cutout formed in an object, non-parallel with each other, providing a first set formed of a plurality of equidistan...
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WO/2002/059696A1 |
The invention is concerned with a method f alignment for aligning crystal planes of a wafer substrate (40) to lithographic features thereon, the method characterised in that it includes the steps of: (a) measuring angular orientation of ...
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WO/2002/054462A1 |
A stage device, wherein a reference plate (50) having a reference flat surface with a high flatness at the center part thereof and having a generally annular low rigid part lower in rigidity than the other part of the reference flat surf...
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WO/2002/052350A1 |
For determining the alignment of a substrate (W) with respect to a mask (MA), a substrate alignment mark (P10), having a periodic structure, and an additional alignment mark (P11), having a periodic structure and provided in a resist lay...
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WO/2002/052623A1 |
A calibrating member (200) for calibrating an electron beam irradiation position in an electron beam exposure system, comprising a substrate (202), and a mark unit (204) provided on the substrate (202), for detecting an electron beam irr...
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WO/2002/052620A1 |
Prior to measurement of the wavefront aberration of a projection optical system (PL), the position where the image of the pattern of a test reticle (Rt) the image of which is formed on a predetermined surface is formed is measured by an ...
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WO/2002/052622A1 |
In order to sensitize all the resist in the area irradiated with an electron beam in the direction of the film thickness, it is necessary to increase the acceleration voltage of the electron beam. However, the energy of the accelerated e...
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WO/2002/052351A1 |
In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer (RL), in which a mask pattern (C) is to be imaged, and a substrate (W), use is made of an alignme...
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WO/2002/048798A1 |
A wafer alignment system uses four fine alignment targets (420a, 420b, 430a, 430b) per stepper shot (410). The four alignment targets are disposed within the scribe line (404) on each side of a four-sided stepper shot. The targets on opp...
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WO/2002/049083A1 |
Effects by mask-specific characteristics are minimized and an accuracy with which to measure a mark position is improved. A mask mark RM1 is positioned within an observation visual field in an observation system, any one of a plurality o...
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WO/2002/047919A1 |
A process for adjusting the energy of an imaging laser for imaging of a thermally imageable element and thermally imageable elements suitable for this purpose are described. The process comprises the steps of: (a) providing an imaging un...
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WO/2002/047918A1 |
A process for adjusting the energy of an imaging laser for imaging of a thermally imageable element and thermally imageable elements suitable for this purpose are described. The process comprises the steps of: (a) providing an imaging un...
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WO/2002/047130A1 |
A method for manufacturing an observation device by which the residual aberration including a high-order aberration component of the wave front aberration can be corrected satisfactorily. A method for manufacturing an observation device ...
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WO/2002/046843A1 |
In order to align a mask to a specific crystal plane in a wafer, a first mask having at least one alignment structure is deposited on the wafer surface. The alignment structure is coarsely aligned with the specific crystal plane and has ...
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WO/2002/047131A1 |
An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, a mark part being irradiated with an electron beam in order to det...
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WO/2002/047132A1 |
An X-ray projection exposure device for exposing a desired fine pattern highly precisely onto a circuit pattern on a wafer. This X-ray projection exposure device comprises an X-ray source, an X-ray illuminating optical system for irradia...
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WO/2002/047133A1 |
A high-accuracy alignment is implemented even when the imaging characteristics of a projection optical system are adjusted. A mark formed on an object is imaged via a projection optical system to measure position information of the mark....
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WO/2002/043123A1 |
In an aligner (100), a detection light flux from an irradiation system (20a) is reflected off the surface and rear of a light transmitting protective member for protecting the pattern face of a mask (R), first and second reflected light ...
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WO/2002/041082A1 |
Alignment marks (1) in X- and Y-direction are measured in different layers of a semiconductor wafer (2) using a different filter (5) or algorithm for each direction measurement as well as a different template signal (4) in order to retri...
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WO/2002/041373A1 |
An electron beam correction method for correcting irradiation positions of at least two electron beams in an electron beam exposure system for exposing wafers by at least two electron beams, the method comprising a detection step for det...
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WO/2002/039793A2 |
A method for aligning an image to be recorded by a direct image scanner on an upper layer of a printed circuit board with an image recorded on a lower layer thereof, the method comprising visually imaging a portion of the image on the lo...
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WO/2002/039326A1 |
Targets are inserted throughout the layout of a PCB. Post manufacture measurement of the targets are compared to pre-manufacture positions so as to calculate a non-linear regression analysis best fit model. This model is used to product ...
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WO/2002/039182A1 |
The present invention describes systems (10) and methods for exposure and removal of material on the periphery of a substrate. The system includes an emitting radiation or exposure source, preferably a guide such as an optical assembly (...
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