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WO/2022/093551A1 |
Systems and methods for synchronization of radio frequency (RF) pulsing schemes and of sensor data collection are described. One of the methods includes receiving, by an RF generator, a first set of one or more variable levels and one or...
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WO/2022/093280A1 |
A confinement ring for use in a plasma processing chamber includes a lower horizontal section, a vertical section, and a upper horizontal section. The lower horizontal section extends between an inner lower radius and an outer radius of ...
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WO/2022/091860A1 |
This plasma processing device includes: a processing vessel inside which a substrate to be subjected to plasma processing is placed; a plasma generating unit for generating plasma in the processing vessel; a focusing unit which is dispos...
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WO/2022/092208A1 |
This membrane protein analysis substrate comprises: an electron microscope grid having a plurality of through holes; a lipid bilayer membrane provided covering at least one of the plurality of through holes; and a membrane protein retain...
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WO/2022/094381A1 |
An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a...
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WO/2022/089320A1 |
Provided are a wafer carrying mechanism and a semiconductor process apparatus. The wafer carrying mechanism is used for the semiconductor process apparatus and comprises a mounting support, a carrying plate, a heater, a cooling structure...
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WO/2022/091234A1 |
The purpose of the present invention is to resolve a trade-off among throughput, SNR, and spatial resolution in a charged particle beam device. For this purpose, a computer 18 sets a charged particle optical system or a detection system ...
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WO/2022/088682A1 |
The present application relates to the technical field of semiconductor manufacturing, and provides a disassembling and assembling device for a gas distribution plate of an etching machine, and the etching machine for solving the problem...
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WO/2022/085990A1 |
The present invention relates to a substrate treatment apparatus comprising: a process chamber; a first electrode positioned in the upper part of the process chamber; a second electrode positioned below the first electrode and including ...
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WO/2022/087004A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater emb...
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WO/2022/085309A1 |
[Problem] To provide a focused energy beam device having high inspection accuracy and processing accuracy by increasing the degree of vacuum in a processing space through which an energy beam passes. [Solution] A focused energy beam devi...
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WO/2022/087365A1 |
Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence o...
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WO/2022/082991A1 |
A high-resolution in-situ suspension-type temperature difference and voltage applying chip for a transmission electron microscope and a preparation method therefor. The chip comprises a substrate (1) with two faces covered with insulatin...
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WO/2022/086638A1 |
An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bond layer disposed over the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed over the bo...
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WO/2022/087145A1 |
Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may defin...
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WO/2022/086827A1 |
A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, ...
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WO/2022/086788A1 |
Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a...
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WO/2022/087573A1 |
Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includ...
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WO/2022/086869A1 |
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends ...
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WO/2022/086673A1 |
Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target di...
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WO/2022/083170A1 |
Embodiments of the present disclosure provide a grid, comprising: a carrier body; and at least one support column, the support column being located on the carrier body, the support column having a top surface for supporting a sample, at ...
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WO/2022/086724A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assem...
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WO/2022/086709A1 |
Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In ...
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WO/2022/086670A1 |
A system and method for creating various dopant concentration profiles using a single implant energy is disclosed. A plurality of implants are performed at the same implant energy but different tilt angles to implant ions at a variety of...
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WO/2022/083789A1 |
Disclosed in the embodiments of the present invention is an electron microscope, comprising: an electron source, which is configured to generate an electron beam; a first beam conduit, which is configured to accelerate the electron beam;...
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WO/2022/081373A1 |
The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handlin...
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WO/2022/081449A1 |
A radio-frequency (RF) power circuit for a multi-electrode cathode in a processing chamber may include an RF source and inductive element(s) that are conductively coupled to the RF source. A first inductive element may be inductively cou...
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WO/2022/078802A1 |
Disclosed herein is an aperture array configured to define sub-beams that are scanned in a scanning direction in a charged particle apparatus, the aperture array comprising a plurality of apertures arranged in an aperture pattern that co...
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WO/2022/080658A1 |
The present invention relates to an RF sputtering apparatus for controlling an atomic layer of a thin film and, more specifically, to an RF sputtering apparatus which comprises a power cable and a power line as a single crystal copper wi...
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WO/2022/081458A1 |
Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing regi...
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WO/2022/080629A1 |
A linear movement sealing device is disclosed. The linear movement sealing device according to an embodiment of the present invention is mounted to a chamber in which a semiconductor substrate is processed while a susceptor with the semi...
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WO/2022/081499A1 |
Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electros...
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WO/2022/080688A1 |
The present invention relates to an apparatus and method for forming a thin film, the apparatus comprising: a chamber having inside a substrate processing space; a substrate support unit connected to the chamber so as to support a substr...
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WO/2022/081354A1 |
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded ...
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WO/2022/079203A1 |
Apparatus for generating a plasma via the transient hollow cathode discharge effect is disclosed. The apparatus comprises a chamber comprising an inlet through which gas may enter the chamber and an outlet through which the gas may exit ...
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WO/2022/081700A1 |
Disclosed is a multilayer sintered ceramic body comprising at least one first layer comprising at least one crystalline phase of YAG, wherein the at least one first layer has at least one surface; and at least one second layer comprising...
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WO/2022/080656A1 |
The present invention relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ej...
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WO/2022/081849A1 |
A magnetron sputtering system includes a substrate mounted within a vacuum chamber. A plurality of cathode assemblies includes a first set of cathode assemblies and a second set of cathode assemblies, and is configured for reactive sputt...
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WO/2022/081714A1 |
A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are flui...
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WO/2022/081535A1 |
A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of ele...
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WO/2022/082208A1 |
Exemplary substrate processing systems may include a body that defines processing and transfer regions. The systems may include a liner atop the body. The systems may include a faceplate atop the liner. The systems may include a support ...
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WO/2022/081715A1 |
Exemplary substrate processing system may include a chamber body that defines a processing region. The systems may include a liner positioned atop the chamber body. The liner may include first disconnect members. The systems may include ...
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WO/2022/078592A1 |
According to one aspect of the present disclosure, a sputter deposition source (100) for coating a substrate (10) arranged in a coating area (105) of a deposition chamber (101) is provided. The sputter deposition source (100) includes a ...
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WO/2022/078336A1 |
Provided by the present invention are an impedance matching method applied to a semiconductor process device, an impedance matcher and the semiconductor process device. The impedance matching method comprises: at the beginning of a proce...
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WO/2022/081343A1 |
Exemplary semiconductor processing systems may include a remote plasma source and a processing chamber. The processing chamber may include a gasbox defining an access into the processing chamber. The systems may include an adapter positi...
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WO/2022/076162A1 |
An electron source is disclosed. The electron source may include an electron emitter configured to generate one or more electron beams. The electron source may further include a magnetic suppressor electrode surrounding at least a portio...
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WO/2022/073613A1 |
The present disclosure provides a carrier transport system for transporting a carrier 100 within a vacuum chamber, a method of transportation of a carrier, and an apparatus for vacuum processing of a substrate. The carrier transport syst...
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WO/2022/076227A1 |
A moveable edge ring system for a substrate processing system includes a top moveable ring including a first annular body arranged around a substrate support. The top moveable ring is exposed to plasma during substrate processing. A move...
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WO/2022/076179A1 |
Exemplary semiconductor processing systems may include a processing chamber, an inductively coupled plasma (ICP) source disposed in or on the processing chamber, and a support configured to position a substrate. The support can be dispos...
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WO/2022/074262A1 |
The invention provides a system and method for measuring a characteristic of a plasma or a plasma chamber, wherein the plasma chamber has a viewport or a surface which is permeable to electromagnetic radiation such that at least a portio...
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