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WO/2022/046461A1 |
A plasma processing system includes a radical source chamber including a gas inlet, an electrode coupled to a radio frequency (RF) power source, where the electrode is configured to generate radicals within the radical source chamber, an...
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WO/2022/046643A1 |
A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized ...
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WO/2022/037980A1 |
Detector modules, systems and methods for detecting signal beams are disclosed using a detector module and a support comprising a feedthrough. Furthermore, apparatuses, systems, and methods for sealing a vacuum system configured to provi...
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WO/2022/040233A1 |
A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surfa...
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WO/2022/039042A1 |
An emitter according to the present disclosure comprises: a first and a second heater that each produce heat upon electrification; an electron source that emits electrons through heating by the first and the second heater and that is com...
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WO/2022/038904A1 |
[Solution] Provided is a focused ion beam device comprising: a differential exhaust device and a focused ion beam column, and further comprising a vacuum pad made of a porous material that exposes a suction surface so as to surround the ...
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WO/2022/038080A1 |
A load-lock system (300) includes a chamber (302) enclosing a supporting structure (308) configured to support a wafer (310); a gas vent (312) arranged at a ceiling (304) of the chamber (302) and configured to vent gas into the chamber (...
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WO/2022/039984A1 |
A system for estimating stress on a component of a processing chamber during a process includes a plurality of sensors configured to sense temperatures at a plurality of locations of the component during the process and a controller a co...
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WO/2022/038841A1 |
According to the present invention, one desired beam among multiple beams is quickly aligned with a small diameter aperture. This multi-electron beam inspection device comprises: a beam selection aperture substrate provided with a first ...
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WO/2022/039251A1 |
The purpose of the present invention is to provide a graphene grid which makes it possible to suppress or prevent the uneven distribution of a structure analysis target substance, i.e., a substance to be analyzed with respect to the stru...
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WO/2022/038866A1 |
The photoelectric surface electron source 1 is provided with: a glass substrate 40 which, upon receiving laser beams 101 incident from a substrate back surface 44, emits the laser beams 101 from a substrate main surface 43; a photoelectr...
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WO/2022/038867A1 |
A photoelectric-surface electron source 1 includes: a glass substrate 40 that receives laser light 101 from a substrate light-receiving surface 50a including microlenses 41 and that focuses the laser light 101 toward a substrate main sur...
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WO/2022/039311A1 |
The present invention relates to a method and a system for controlling a plasma process by using a smart sensor, the method comprising the steps of: correcting, by the smart sensor, spectral data by classifying the spectral data included...
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WO/2022/035300A1 |
This plasma generator comprises: a reactor main body having a gas inlet on one side; and a collector, connected to the other side of the reactor main body, having a collection space therein. The reactor main body and collector provide re...
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WO/2022/035565A1 |
In an embodiment, the a semiconductor processing tool is disclosed. In an embodiment, the semiconductor processing tool comprises a chamber, and a displaceable column that passes through a surface of the chamber. In an embodiment, the co...
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WO/2022/035629A1 |
A substrate support assembly for supporting a substrate includes a baseplate, a ceramic plate arranged on the baseplate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers ...
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WO/2022/033941A1 |
Disclosed herein is an actuator arrangement (70) comprising: a wall (504) defining a cavity (71); a casing (72) protruding from the wall (504) and defining an interior (73) in fluid communication with the cavity (71); an actuator (901) c...
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WO/2022/033757A1 |
The present invention relates to a slit diaphragm, to a slit diaphragm system comprising at least two slit diaphragms positioned adjacent to one another, and to a coating module or a coating unit having a slit diaphragm.
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WO/2022/036222A1 |
A surface treatment device includes a body and a plasma source disposed within the body. The plasma source includes a first inlet through the body and an ionization wave generator adjacent the first inlet to receive feedstock gas via the...
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WO/2022/032463A1 |
Disclosed in the present invention are a transmission electron microscope high-resolution in-situ fluid freezing chip and a preparation method therefor. A support layer, a freezing layer, an insulating layer, a hole and a central window ...
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WO/2022/035099A1 |
The present invention relates to a substrate treatment apparatus and a substrate treatment method, the apparatus comprising: a first chamber in which a first treatment process is performed on a substrate; a second chamber in which a seco...
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WO/2022/033717A1 |
The invention relates to a multiple particle beam system with a mirror mode of operation, a method for operating a multiple particle beam system with a mirror mode of operation and an associated computer program product. The multiple par...
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WO/2022/031467A1 |
Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a d...
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WO/2022/028633A1 |
A method of operation of a charged particle beam device, where the observed place on a sample moves within the field of view of the charged particle beam device as the sample is tilted or rotated. At least one sample image in a first sam...
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WO/2022/031854A1 |
A selected reject band non-RF-coupling tile includes a ground plate disposed on a first side of a printed circuit board. The selected reject band non-RF-coupling tile also includes a planar inductor disposed on a second side of the print...
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WO/2022/029262A1 |
A processing arrangement (10) comprising: a device (240) for providing a focused particle beam (242); a sample (300), which can be processed with the aid of the particle beam (242) and a process gas (PG); and a flushing plate (100) compr...
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WO/2022/031903A1 |
Embodiments disclosed herein are generally related to a system for noise reduction in low signal to noise ratio imaging conditions. A computing system obtains a set of images of a specimen. The set of images includes at least two images ...
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WO/2022/029315A1 |
Method for the particle beam-induced etching of a lithography mask (100), more particularly a non-transmissive EUV lithography mask, having the steps of:a) providing (S1) the lithography mask (100) in a process atmosphere (ATM),b) beamin...
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WO/2022/031614A1 |
Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting...
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WO/2022/031392A1 |
An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive th...
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WO/2022/030064A1 |
A multi charged particle beam drawing device according to one aspect of the present invention is characterized by comprising: a beam formation mechanism that forms a multi charged particle beam; a block region generation circuit that gen...
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WO/2022/025655A1 |
A nozzle for deposition of powder aerosol for coating is disclosed. The nozzle for deposition of powder aerosol for coating comprises: an entrance part through which carrier gas and the powder aerosol for coating are injected, and a disc...
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WO/2022/022993A1 |
A method (100) for determining a three-dimensional atomic distribution of a sample (201) having a tip, during an atom probe tomography process. The method accounts for the tip not being axial symmetric and not having a hemispherical shap...
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WO/2022/026813A1 |
A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner ...
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WO/2022/023695A1 |
There is provided an electron beam welding apparatus (10) comprising socket means (40) formed with a first channel (38) configured to receive a high-voltage supply member, wherein the socket means further comprises a tubular plug (42) ha...
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WO/2022/026363A1 |
Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wa...
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WO/2022/026797A1 |
A power generator includes a plurality of amplifier blocks and a combiner. Each of the amplifier blocks include one or more amplifiers, and the combiner combines modulated power signals output from the amplifier blocks to generate an RF ...
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WO/2022/026133A1 |
A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide la...
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WO/2022/026653A1 |
An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes ...
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WO/2022/025959A1 |
Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of t...
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WO/2022/023304A1 |
Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged- particle source, an optical source, a charged-particle det...
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WO/2022/023232A1 |
A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sa...
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WO/2022/026127A1 |
Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configure...
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WO/2022/022819A1 |
A method of imaging a sample with a charged particle beam device, comprising: determining a first focusing strength of an objective lens of the charged particle beam device, the first focusing strength being adapted to focus a charged pa...
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WO/2022/026130A1 |
A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter...
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WO/2022/024555A1 |
A processing apparatus comprising a substrate support stage on which a substrate to be processed is mounted, and a head part that can move relative to a surface to be processed of the substrate to be processed, and further comprising a d...
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WO/2022/020926A1 |
The present invention is essentially a system comprising: a geometrically configured parabolic mirror (1), at least one convergent lens (2), a precise positioning handle (3), at least one optical fibre (4), at least one optical spectrome...
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WO/2022/026097A1 |
The present disclosure describes material surface treatment systems and methods that employ a byproduct treatment system to receive a byproduct generated by application of a plasma, the byproduct treatment system configured to degrade th...
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WO/2022/023422A1 |
Pulsing assembly (3) and method for delivering power to a plasma reactor (2) with a first load (8) between a first plasma reactor input port (20) and a plasma reactor common port (10) and with a second load (9) between a second plasma re...
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WO/2022/023094A1 |
A gas ion gun comprising an anode electrode (16) to remove electrons from a gas in order to create gas ions. The anode electrode comprising a wire (20) made of an electrical conductive material or of a semiconductor material, the wire ex...
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