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WO/2022/111567A1 |
The present invention provides a semiconductor process device and a power control method. The device comprises an upper electrode assembly, a process chamber and a power adjustment assembly. The process chamber is provided with a chuck f...
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WO/2022/115205A1 |
An apparatus may include a scanner, arranged to receive an ion beam, and arranged to deliver a scan signal, defined by a scan period, to scan the ion beam between a first beamline side and a second beamline side. The apparatus may includ...
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WO/2022/105794A1 |
The present invention provides a process chamber and a semiconductor process device. The process chamber is applied to a semiconductor process device, and comprises a chamber body, a base and a chuck assembly; a reaction chamber is forme...
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WO/2022/108743A1 |
A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic pow...
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WO/2022/106622A1 |
There is provided a drive circuit for a dielectric barrier discharge device. The drive circuit comprises: a power supply connectable in use across a dielectric discharge gap, the dielectric discharge gap providing a capacitance; and an i...
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WO/2022/106161A1 |
A detector may be provided for a charged particle apparatus comprising: a sensing element including a diode; and a circuit configured to detect an electron event caused by an electron impacting the sensing element, wherein the circuit co...
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WO/2022/108526A1 |
Disclosed is an apparatus and method for forming a magnetic recording medium having a recording layer with a plurality of perpendicular magnetic domains configured to store data; and a carbon overcoat formed on the recording layer. The c...
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WO/2022/108754A1 |
An impedance match housing is described. The impedance match housing includes an impedance matching circuit having an input that is coupled to a radio frequency (RF) generator. The impedance matching circuit has an output that is coupled...
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WO/2022/108755A1 |
In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided...
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WO/2022/108888A1 |
Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a porti...
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WO/2022/108789A1 |
Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge r...
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WO/2022/108900A1 |
A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spr...
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WO/2022/109049A1 |
A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input para...
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WO/2022/108332A1 |
Proposed are a gas supplier and a substrate deposition apparatus. The gas supplier is made of a material different from that of conventional gas suppliers so as to exhibit minimized bending deformation in a high-temperature environment, ...
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WO/2022/108753A1 |
A system for performing a plasma process on a wafer is provided, including: a chamber configured to receive a wafer for plasma processing and having an interior defining a plasma processing region in which a plasma is provided for the pl...
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WO/2022/108880A1 |
Gas boxes for providing semiconductor processing gases are provided that incorporate a cross-flow ventilation system that may effectively remove potentially leaking gases from within the gas box at significantly lower volumetric flow rat...
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WO/2022/109016A1 |
Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a subs...
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WO/2022/108707A1 |
A purge ring including a supply port configured for receiving gas. An outer channel is connected to the supply port. An outlet network is configured for an exit flow of the gas proximate to an inner diameter of the purge ring. The purge ...
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WO/2022/106143A1 |
Disclosed herein is an inspection tool and a method for identifying defects in a sample. The method includes steps of scanning a first area of a sample with a first detector-beam and scanning a second area of the sample with a second det...
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WO/2022/102909A1 |
Disclosed is a plasma etching method. The plasma etching method comprises: a first step for vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and pentafluoropropanol (PFP); a second step for supplying a discharge gas compris...
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WO/2022/100538A1 |
A plasma immersion ion implantation apparatus, comprising: a process chamber (1), wherein a base (2) is provided in the process chamber (1), the base (2) comprises a bearing surface for bearing a wafer, the body of the process chamber (1...
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WO/2022/104166A1 |
Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for...
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WO/2022/103467A1 |
Magnetic lens having two or more distinct and separate, detachable assemblies, at least one of the detachable assemblies having a core about which a solenoid is wound so that the solenoid need not be wound or unwound when the assemblies ...
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WO/2022/103765A1 |
An RF signal supply system for plasma generation includes an RF signal generator, an impedance matching system, and a control module. The RF signal generator includes a control system. The impedance matching system has an input connected...
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WO/2022/101072A1 |
Objective lens array assemblies and associated methods are disclosed. In one arrangement, the objective lens array assembly focuses a multi-beam of sub-beams on a sample. Planar elements define a plurality of apertures aligned along sub-...
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WO/2022/101957A1 |
The present invention automatically performs surface activation of a photocathode in a short amount of time with good reproducibility and without requiring any skill. To this end, an activation mechanism is provided in an activation regi...
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WO/2022/102140A1 |
According to the present invention, an input and output device comprises: an instruction analysis unit which generates a conversation manuscript in which conversation uttered by a user is converted into character string data, and recogni...
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WO/2022/103544A1 |
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a su...
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WO/2022/103672A1 |
A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing cha...
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WO/2022/100857A1 |
A carrier transport system (100) for contactlessly transporting a carrier (10) along a track assembly is described. The carrier transport system includes a passive magnet arrangement (120) for generating a carrier levitation force (FL) c...
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WO/2022/103567A1 |
Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, where...
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WO/2022/099687A1 |
Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of ...
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WO/2022/103543A1 |
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a su...
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WO/2022/095794A1 |
Disclosed in the present invention are a carrying device and a semiconductor reaction chamber. In the carrying device, a focusing ring assembly comprises: an upper focusing ring and a lower focusing ring; a groove is formed on the upper ...
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WO/2022/096144A1 |
The invention is directed to transferring alignment information from a first set of images to a second set of images. A first set of cross- section images taken at times Tai in a first imaging mode is obtained. A second set of cross-sect...
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WO/2022/098440A1 |
An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave...
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WO/2022/098567A1 |
A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprisi...
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WO/2022/097760A1 |
A plasma diagnosis system and a plasma diagnosis method are disclosed. The plasma diagnosis system according to an embodiment of the present invention may comprise: a first planar substrate on which at least a part of a plasma to be diag...
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WO/2022/098778A1 |
A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially o...
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WO/2022/090737A2 |
An apparatus and method for treating an effluent stream from a semiconductor processing tool are disclosed. The plasma abatement apparatus is for treating an effluent stream from a semiconductor processing tool, the plasma abatement appa...
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WO/2022/092616A1 |
The present invention relates to a plasma generating apparatus for secondary batteries, comprising: a transfer roller for transferring a separator; a plasma generating unit for forming, on a portion of a surface of the separator transfer...
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WO/2022/089475A1 |
Provided are a semiconductor manufacturing device and a Faraday cup thereof. The Faraday cup comprises a cup body (100) and a cup rim assembly (200), wherein the cup rim assembly (200) is arranged on a cup rim of the cup body (100); and ...
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WO/2022/093597A1 |
Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface faci...
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WO/2022/093974A1 |
A component for use in a plasma processing chamber system is provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids c...
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WO/2022/093404A1 |
An ion implantation system 101, ion source 108, and method are provided, where an ion source is configured to ionize an aluminum- based ion source material 113,132 and to form an ion beam 112 and a by-product including a non-conducting m...
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WO/2022/093753A1 |
A power system for a plasma processing system and associated methods are disclosed. The power system comprises a generator with a frequency-tuning subsystem, a match network coupled between the plasma processing chamber and the generator...
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WO/2022/093273A1 |
In plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. A toroid is provided with one or more wire windings around the toroid, the wire being couple...
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WO/2022/092077A1 |
The present invention overcomes a trade-off between throughput, SNR, and spatial resolution in a charged particle beam device. Accordingly, a computer (18) sets at least one of a charged particle optical system and a detection system so ...
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WO/2022/092386A1 |
The present invention provides a sensor device for diagnosing a semiconductor process, the sensor device comprising: a lower case in which a seating groove is formed; a circuit board which is arranged in the seating groove with a plurali...
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WO/2022/091475A1 |
Provided is a Wien filter in which discharge risk is reduced and which operates stably with excellent efficiency. A Wien filter according to an embodiment of the present invention comprises: a tubular yoke; a plurality of magnetic poles ...
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