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WO/2022/242978A1 |
The present invention provides a various techniques for detecting secondary charged particles and backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary char...
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WO/2022/243493A2 |
A method of producing coated substrates resistant to plasma corrosion and a related coating are provided. The method comprises depositing, over at least a portion of a substrate, an yttrium-containing plasma resistant coating through a p...
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WO/2022/243048A1 |
Provided is an aberration corrector (101) having a plurality of magnetic poles (210, 211) including a first magnetic pole (210) and further magnetic poles (211), a ring (240) that magnetically connects the plurality of magnetic poles wit...
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WO/2022/242120A1 |
The present application relates to an ion source apparatus and a usage method therefor, and a vacuum treatment system. The apparatus comprises a discharge cavity, wherein the cylindrical central axis thereof is the central axis of the io...
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WO/2022/244149A1 |
Provided is an ion milling device that can achieve remarkable improvement in machining speed controllability and machining profile reproducibility. The ion milling device has: an ion gun (1) that is mounted in a vacuum chamber (4) and th...
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WO/2022/245011A1 |
A semiconductor process system according to an embodiment of the present invention comprises: a substrate support part which includes an electrode and in which a substrate is disposed; and a frequency generation device for providing bias...
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WO/2022/245824A1 |
A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the proces...
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WO/2022/246076A1 |
Methods of filling wordline features of 3D NAND structures with tungsten include treating a conformal tungsten with nitrogen trifluoride (NF3). The NF3 treatment is preferential to the openings of the wordline features relative to the in...
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WO/2022/243611A1 |
The invention relates to a method for depositing a chromium-based material from a target onto a metal substrate, by continuous magnetron sputtering, using a plasma generated in a gas. According to the invention: the ratio between the flo...
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WO/2022/242126A1 |
An ion source apparatus with an adjustable plasma density, which belongs to the field of semiconductor devices. A coil is wound on the outer side of a discharge cavity of the ion source device having an adjustable plasma density; a radio...
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WO/2022/245545A1 |
A manifold assembly for a processing chamber in a substrate processing system includes a manifold. The manifold includes a first valve assembly configured to flow a liquid coolant at a first temperature from a first channel of a coolant ...
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WO/2022/244054A1 |
The purpose of the present disclosure is to provide a high-voltage insulating structure capable of reducing an electric field around a conductor to which a high voltage is applied. In this high-voltage insulating structure, an electrical...
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WO/2022/245700A1 |
Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the process...
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WO/2022/245761A1 |
A processing chamber includes a grid and a first disk. The grid includes a plurality of holes arranged in the processing chamber. The grid partitions the processing chamber into a first chamber in which plasma is generated and a second c...
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WO/2022/244055A1 |
Provided is a sample holder with high versatility. A sample holder 100 includes: a holder shaft 2; a placement part 3 on which a sample SAM can be placed; a movement mechanism 4 for moving the holder shaft in a first direction; a rotatio...
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WO/2022/238611A1 |
A substrate processing apparatus, comprising a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one h...
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WO/2022/240556A1 |
Various embodiments of systems and methods are described herein for controlling a pulsed plasma. Pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) of the plasma generation source may be controlled based on the m...
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WO/2022/239187A1 |
The purpose of the present invention is to efficiently implement correction of aberrations in an electron microscope comprising an aberration corrector that corrects aberrations using a multipole lens. The electron microscope according t...
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WO/2022/238137A1 |
Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in ...
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WO/2022/240390A1 |
A substrate support assembly includes a metal matrix composite (MMC) susceptor body configured to support a substrate in a processing chamber. The MMC susceptor body forms one or more channels configured to receive heat transfer fluid. T...
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WO/2022/240547A1 |
A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column,...
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WO/2022/240919A1 |
A system is provided for generating plasma within narrow diameter tubes, e.g., tubes with an inner diameter of less than 1 millimeter. The system may comprise the tube, a nozzle connected to at least one end of the tube configured to sup...
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WO/2022/238622A1 |
A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) bei...
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WO/2022/238621A1 |
A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) wi...
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WO/2022/240595A1 |
Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing le...
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WO/2022/240651A1 |
Embodiments of the present disclosure relate to a system for pulsed direct- current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a subst...
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WO/2022/240944A1 |
A semiconductor processing chamber for processing semiconductor substrates may include a pedestal to support a substrate with a heater zones and a wire mesh configured to deliver a Radio Frequency (RF) signal to a plasma. The chamber may...
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WO/2022/239646A1 |
A multi-electron beam image acquisition device according to an aspect of the present invention is characterized by comprising: a stage on which a substrate is mounted; an illumination optical system which uses a multi-primary electron be...
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WO/2022/240418A1 |
A substrate support assembly includes a cooling plate forming one or more channels configured to receive heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas...
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WO/2022/240704A1 |
Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substr...
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WO/2022/241196A1 |
A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit o...
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WO/2022/240998A1 |
An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, an...
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WO/2022/235399A1 |
A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to gener...
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WO/2022/234029A1 |
A method for treating the surface of a steel strip is provided where the method comprises the steps of providing a steel strip (5), plasma treatment of the steel strip by a magnetron plasma sputter unit (1); transferring of the plasma tr...
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WO/2022/235920A1 |
Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma pr...
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WO/2022/235327A1 |
A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion...
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WO/2022/235454A1 |
Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop ...
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WO/2022/233093A1 |
A microfocus field emission electron source based on a carbon nanotube, and a preparation method therefor. The method comprises the following steps: (1) applying a metal platinum layer onto the surface of a nickel substrate; (2) under th...
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WO/2022/233343A1 |
A method and a device for manufacturing a hydrophilic substrate are provided. The method includes introducing reaction gas into vacuum chamber; applying first voltage to the vacuum chamber, applying second voltage to sample carrier, and ...
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WO/2022/235544A1 |
Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system contr...
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WO/2022/232502A1 |
Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a firs...
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WO/2022/231783A1 |
The present disclosure may include a method for calibrating a capacitor in a matching network in a radio frequency plasma processing device, the method including. The method may include identifying the capacitor in the matching network, ...
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WO/2022/230488A1 |
Provided is: an electron gun that can lengthen the life of a photocathode; an electron beam applying device in which said electron gun is mounted; and an irradiation position shifting method.　The electron gun includes a light source, a...
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WO/2022/232410A1 |
Apparatus for treating water is provided where the apparatus includes a reaction chamber having an air-water interface and a plasma applicator disposed in air in proximity to the air-water interface. The plasma applicator includes a soli...
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WO/2022/231862A1 |
An integrated microcrystal electron diffraction system and method are provided that include an electron source, a sample assembly configured to retain a sample, a camera assembly, and a control system. The control system pre-screens the ...
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WO/2022/231922A1 |
An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footpri...
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WO/2022/231673A1 |
A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of th...
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WO/2022/230135A1 |
An electron beam irradiation device (1) radiates an electron beam from an electrode (12) that is connected to a tip of a conductive part (21) which projects inside a vacuum container (11), to the exterior of the vacuum container (11) via...
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WO/2022/231806A1 |
A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to...
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WO/2022/228778A1 |
The invention relates to a hollow cathode system for generating a plasma and to a method for operating such a hollow cathode system, in which an anode device (13), a power supply device (14) for providing an electrical voltage applied be...
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