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WO/1980/001663A1 |
Manufacture of sponge rubber shapes, such as spheres (10) used for cleaning tubes internally, and the shapes made thereby. The sponge rubber is initially cut into cubes approximating the shape of the final product. Next the sponge rubber...
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JP2024518380A |
A method of processing a substrate includes selectively dispensing a processing fluid onto the substrate on a die-by-die basis and chemical-mechanically polishing the substrate after dispensing the processing fluid. The processing fluid ...
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JP7473414B2 |
To provide a wafer processing method which can satisfactorily remove an outer circumferential surplus region even in the case that a wafer surface is covered with resin such as polyimide and prevents a device from being damaged even in t...
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JP7467759B2 |
A magnetic disk substrate of an embodiment comprises a pair of main surfaces, and an outer peripheral edge surface. In the magnetic disk substrate, the outer peripheral edge surface has a pair of chamfered surfaces connecting to the main...
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JP2024048729A |
An object of the present invention is to provide a polishing method and a polishing apparatus that enable power saving and miniaturization, and can easily perform local polishing. [Solution] In the polishing method of the present inventi...
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JP2024046238A |
An object of the present invention is to provide a wafer processing method and processing apparatus that can suppress damage to devices when grinding a wafer to a final thickness. [Solution] A method for processing a wafer is to set a co...
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JP7460322B2 |
A processing method for a wafer having a chamfered portion on an outer circumference thereof includes a step of irradiating a laser beam of a transmission wavelength to the wafer along an outer circumferential edge of the wafer at a posi...
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JP2024043189A |
In one aspect, there is provided a method for manufacturing a magnetic disk substrate that can both improve the polishing rate and reduce waviness on the surface of the substrate after polishing, and has excellent productivity. The prese...
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JP7452403B2 |
Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the rati...
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JP7451041B2 |
To provide a hub type cutting blade which fixes a base and a cutting blade in regardless of a size of abrasive grains.A cutting blade 60 used in a cutting unit 18 of a cutting device for cutting a workpiece held by a chuck table in a sta...
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JP7451324B2 |
A substrate processing apparatus which reliably prevents a cleaning liquid containing foreign particles from falling from a polishing head onto a substrate is disclosed. The substrate processing apparatus includes a rotating and holding ...
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JP2024511275A |
The present invention relates to a method for manufacturing a disk from a cylindrical rod made of semiconductor material with an axis and an identification groove on the side of the rod, parallel to the axis. The method comprises, in a p...
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JP2024032221A |
An object of the present invention is to provide a wafer grinding method that can efficiently grind a wafer to a uniform thickness in a short time. [Solution] A method for grinding a wafer W is to grind a wafer W by bringing a rotating a...
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JP7446055B2 |
A method for multistep machining a cutting tool comprises the steps of defining a data set (12) of the cutting tool comprising target geometries of the cutting tool, parameters of materials of the cutting tool and/or parameters of proces...
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JP7441957B2 |
A substrate recycling method according to the present disclosure is intended for allowing reuse of a first processed substrate obtained by detaching a semiconductor device layer formed on a growth substrate. The substrate recycling metho...
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JP2024025598A |
[Problem] Processing technology using a wire mesh grindstone that enables a variety of cutting processes such as straight groove machining, arbitrary groove width processing, and straight line cutting to arbitrary curve cutting on workpi...
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JP2024022743A |
The present invention provides a new method for polishing a disc-shaped workpiece that does not cause a large difference in thickness between the outer circumference and other parts of the workpiece. [Solution] A method for polishing a w...
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JP2024022232A |
[Problem] High efficiency in a smoothing process that removes waviness components from single crystal diamond (SCD), polycrystalline diamond (PCD), or diamond-like carbon (DLC) substrates, flattens them, and improves the subsequent surfa...
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JP2024017800A |
The present invention provides a method for processing a workpiece that can easily reduce variations in the thickness of the workpiece after grinding. [Solution] A method for processing a workpiece, which includes a fixing step of fixing...
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JP2024017963A |
The present invention provides a management device, a management method, and a wafer manufacturing system that can improve the processing yield of wafers. A management device 20 includes a control unit 22 that manages a plurality of wafe...
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JP7428473B2 |
Provided is a method of manufacturing an electronic part including fixing a hard and brittle substrate to a support and separating the hard and brittle substrate from the support, the method being capable of preventing the hard and britt...
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JP2024014687A |
[assignment] The purpose of the present invention is to provide a system and a program that can maintain the machining accuracy of a workpiece even if the abrasive material wears out. [Solution] A system comprising at least one computer ...
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JP2024009647A |
An object of the present invention is to provide a wafer production method that can reduce processing defects by removing peeling debris generated when a wafer is peeled from an ingot. [Solution] A method for producing a wafer is to plac...
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JP7419467B2 |
To eliminate wafer damage after performing wafer shape processing and damage of a wafer end face in a step of pressing a polishing tape against an edge portion of the wafer end face.In a wafer W thinned to a desired thickness by back gri...
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JP7409820B2 |
To provide a polishing method and a polishing liquid for an InP semiconductor substrate, which can obtain polishing efficiency without increasing a polishing load.In a polishing method of a polishing device 10, by using a polishing pad 1...
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JP2023184380A |
PURPOSE: To provide a method and a device effective at a site for reducing downtime of a prober by performing the method in a short time with high efficiency without adversely affecting environment of a semiconductor manufacturing site a...
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JP7405649B2 |
A method of grinding a surface of a workpiece that has surface irregularities includes a first grinding step of grinding the surface of the workpiece by a predetermined amount of stock removal while keeping a measuring element of a heigh...
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JP2023180400A |
To effectively remove a burr generated in a kerf of a workpiece without using a large amount of high-pressure water.A burr removal device 40 removes a burr in a workpiece W in which the burr is formed in a kerf cut by a cutting blade 32,...
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JP7402538B2 |
The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The ...
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JP2023178927A |
To suppress cracking and chipping in a workpiece and accomplish polishing of high quality.A polishing tape is arranged so that tension is applied thereto, between a polishing tape supply pulley and a polishing tape winding pulley. Then, ...
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JP2023177697A |
To provide a grinding method of a workpiece which can inhibit occurrence of chips at an outer periphery part of the workpiece.A grinding method of a workpiece includes: a holding step 101 in which a workpiece is held on a holding table; ...
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JP2023177443A |
To provide a grinding method for a work-piece that can form a concave part so that a center of a surface to be ground of the work-piece matches with a center of a bottom surface of the concave part, even if the work-piece is carried in a...
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JP2023175737A |
To provide a device and a method capable of grinding the surface of a silicon wafer and efficiently and effectively repairing a processed altered layer and flattening the roughness by using a pulse laser.A grinding repair device (1) acco...
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JP2023173782A |
To provide a polishing liquid composition that can reduce residual silica on the substrate surface after polishing, while maintaining the polishing speed.According to one embodiment, a polishing liquid composition contains silica particl...
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JP2023173871A |
To provide a polishing device and a polishing method capable of considering unevenness distributions of a workpiece surface, modifying a surface of the workpiece for improving processing ability in a short time.There is provided a polish...
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JP2023172079A |
To provide a wafer processing method with which it is possible to solve trouble that a wafer is broken when a protective tape is separated.Provided is a method for processing a wafer 10 that has on a surface 10a a device region 11b in wh...
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JP2023549029A |
A method (100) of manufacturing a high resistance silicon handle wafer (230) to enable the formation of a hybrid substrate structure (336). The method includes producing a wafer (212) having a crystal orientation identifier (210), thinni...
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JP7378894B2 |
A processing apparatus includes: a chuck table that is configured to be capable of rotation in a state of supporting the workpiece; a processing unit including a spindle to which a processing tool for grinding or polishing is mounted and...
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JP2023161308A |
To provide a technique capable of minimizing and simplifying an entire apparatus and facilitating recovery of grinding chips and maintenance.An anodization-assisted grinding apparatus comprises: pouring means 8 which pours an electrolyte...
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JP2023160761A |
To provide a method and device of grinding a semiconductor strip capable of shortening the time required for a grinding step.Provided is a method and device of grinding a semiconductor strip. The method of grinding a semiconductor strip ...
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JP7370347B2 |
A production method for a hard disk board 10. The production method: makes it possible to achieve high-precision polishing by quickly selecting to change polishing conditions or replace a polishing pad on the basis of the flatness of the...
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JP7361846B2 |
A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; ...
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JP7358011B2 |
An objective of the present invention is to prevent defects of corners of a device chip if a workpiece is divided by grinding the workpiece to reduce the thickness of the workpiece. A method of manufacturing a plurality of device chips c...
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JP7357567B2 |
Disclosed is a wafer processing method for reliably conducting the so-called TAIKO grinding to form a circular concave portion corresponding to a device region and an annular convex portion corresponding to a peripheral surplus region on...
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JP2023138589A |
To provide a device and a method for processing a wafer with a tape, which can simultaneously achieve improvement of processing quality of edge trimming and improvement of throughput.A device for processing a wafer with a tape stuck to a...
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JP7349761B2 |
A uniform polishing device for crystal materials and use method thereof. The polishing device comprises: a feeding unit (1), a clamping unit (2), a polishing unit (3), and a control unit; the feeding unit (1) drives a workpiece to move a...
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JP7349185B2 |
The present invention discloses a multi-energy field nano-lubricant micro-scale bone grinding processing measuring system, belonging to the technical field of grinding processing. The system includes a three-dimensional displacement work...
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JP7345966B2 |
To provide a wafer regeneration method capable of regenerating a wafer at high quality while suppressing increases in number of steps and cost.A regeneration method of a wafer having a first surface and a second surface and formed with a...
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JP7341532B2 |
Forming an amorphous carbon layer due to lattice distortion of carbon atoms on a surface layer of a single-crystal diamond under a mechanical shear function of a hard abrasive, and generating a chemical reaction between the amorphous car...
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JP2023126228A |
To provide a method for cutting a group III nitride single crystal, capable of reducing the amount of the group III nitride single crystal lost by cutting.The method for cutting a group III nitride single crystal having first and second ...
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