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JP2022057406A |
To provide a magnetic thin film for solving a problem that it is difficult to be magnetized by an external magnetic field and Faraday effect is small (less likely to occur), because a direction of light travel, that is, magnetization in ...
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JP2022055343A |
To provide a thin film magnet that makes it easy to increase the surface magnetic flux density.A thin film magnet 100 according to the present invention includes a ferromagnetic base material 10, an oxide layer 20 provided on the ferroma...
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JP7049958B2 |
To achieve expansion of application range of a composite iron oxide thin film having a first iron oxide layer constituted by a magnetite crystal phase and a second iron oxide layer constituted by a hematite crystal layer as a surface lay...
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JP2022051178A |
To provide a magnetic memory device capable of storing steady information.A magnetic memory device according to an embodiment is provided with a stacked structure including: a first magnetic layer 11 having a variable magnetization direc...
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JP7041597B2 |
A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer that is (001)-oriented. In the magnetic layer, a first magnetic layer and a second magnetic layer are stacked in this order from the und...
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JP2022043545A |
To provide a magnetoresistance effect element having a large MR ratio and capable of achieving magnetization reversal even in a no-magnetic field, and a magnetic memory thereof.A magnetoresistance effect element of a present embodiment i...
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JP2022033026A |
To provide a magnetic film, a magnetoresistive element, and a magnetic memory that maintain the vertical magnetic anisotropy of a magnetic layer in a fixed layer and enables strong pinning even by annealing after a protective film is for...
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JP7022764B2 |
A magnetic-field-applying bias film having strong-magnetic-field resistance includes an exchange coupling film. The exchange coupling film includes a ferromagnetic layer and an antiferromagnetic layer stacked on the ferromagnetic layer. ...
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JP7022765B2 |
A magnetic-field-applying bias film exhibiting resistance to a high magnetic field has an exchange-coupled film including a permanent magnet layer and an antiferromagnetic layer stacked on the permanent magnet layer. The antiferromagneti...
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JP7018652B2 |
The present invention provides a magnetoresistance effect element which has a high thermal stability factor Δ and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a...
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JP7003719B2 |
A magnetic material is constituted of a ferromagnetic or ferrimagnetic insulator in a double perovskite structure of Sr3-xAxOs1-yByO6 (0.5≤x≤0.5, −0.5≤y≤0.5). A is an alkali metal or alkaline earth metal atom, and B is a transi...
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JP7011477B2 |
The invention provides a magnetic recording medium with an excellent signal-to-noise ratio during reading by reducing the noise produced during writing of data onto the magnetic recording medium, and increasing the signal level. The assi...
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JP2022016846A |
To provide a magnetoresistive sensor with a large MR ratio.A magnetoresistive sensor includes a base layer, a protective layer, a laminate that is between the base layer and the protective layer and includes a first ferromagnetic layer, ...
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JP7006696B2 |
A thermoelectric conversion element 10 includes an anomalous Nernst material 11 having the anomalous Nernst effect, in which: the anomalous Nernst material 11 includes at least an element having the inverse spin-Hall effect; and the elem...
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JP7005452B2 |
According to one embodiment, a magnetic memory apparatus includes a first stacked body and a controller. The first stacked body includes a first magnetic layer, a first counter magnetic layer, and a first intermediate layer placed betwee...
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JP7004053B2 |
To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product).The magnetoresistance effect element includes a first ferromagnetic layer, a second ferroma...
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JP2022507063A |
The multilayer film includes a substrate, a first magnetic layer arranged on the substrate, and a second magnetic layer arranged on the first magnetic layer. The first magnetic layer is Fe(50-80)N(10-20)B(1-20)M(0-10)M is Si, Ta, Zr, Ti,...
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JP6999122B2 |
To provide a highly reliable magnetic memory device by improving, e.g., tunnel magnetoresistance (TMR) characteristics of a magnetic tunnel junction (MTJ).A magnetic memory device includes a first magnetic structure on a substrate, a sec...
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JP2022013087A |
To provide a spin orbit material capable of obtaining a spin Hall angle capable of sufficiently reversing the magnetization and being applied to an actual element.A spin material according to an embodiment of the present invention is com...
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JP2022007092A |
To provide a common mode noise suppression member that can maintain good communication quality even in a frequency band of a GHz band or more while suppressing common mode noise transmitted through a differential line without hindering t...
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JP6985708B2 |
To provide: a Mn-based ferromagnetic thin film which has high thermal stability and a low magnetic relaxation constant, and which can be manufactured readily with stability; a method for manufacturing such a Mn-based ferromagnetic thin f...
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JP6986729B2 |
To provide a fundamental monocrystalline magneto resistive element required for realizing mass productivity and a low price when applying a monocrystalline giant magneto resistive element using a Heusler alloy to an actual device.A monoc...
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JP6978000B2 |
A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is position...
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JPWO2020158323A1 |
1st electrode (10), magnetized fixed layer (120) with fixed magnetization direction, 1st insulating layer (130), magnetized free layer with variable magnetizing direction (140), 2nd insulating layer (150), and 1st The two electrodes (160...
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JP6970654B2 |
According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The...
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JP6969752B2 |
A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a C...
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JP2021180059A |
To provide a new compound having magnetic properties applicable to a magnetic recording medium by using a rare earth compound having a ThMn12 type structure, a magnetic storage medium using the same, and a method of producing the same.A ...
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JP6967259B2 |
To provide a laminated film for a surface direct-coupled giant magnetoresistance element which can realize a laminated film for a surface direct-coupled giant magnetoresistance element (CPP-GMR) having a higher MR ratio and a higher sens...
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JP6968398B2 |
Some embodiments are directed to a magnetoresistive device, including a free layer having an easy magnetization direction in a perpendicular direction or in an in-plane direction; a fixed layer having the easy magnetization direction whi...
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JP6965760B2 |
To provide a domain wall displacement type magnetic recording element capable of stably controlling the movement of a domain wall within a predetermined range.A domain wall displacement type magnetic recording element includes a recordin...
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JP2021176184A |
To provide an in-plane magnetization film which can achieve the magnetic performances, i.e. 2.00 kOe or more in coercive force Hc and 2.00 memu/cm2 or more in residual magnetization Mrt per unit area without performing a film formation p...
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JP6954908B2 |
A magnetic isolator includes a dielectric film having a layer of electrically-conductive soft magnetic material bonded thereto. The layer of electrically-conductive soft magnetic material comprises substantially coplanar electrically-con...
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JP6952672B2 |
According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The conductive member includes a first portion, a second portion, ...
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JP6951454B2 |
An exchange-coupling film having a large magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed, thus exhibiting high stability under high-temperature conditions, and having excellent high-magnet...
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JPWO2020110893A1 |
In order to provide a magnetic alloy material containing a metal element as a main component and having a larger spin moment than an iron-cobalt alloy, at least an element selected from the group consisting of iron and cobalt as a main c...
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JPWO2020045655A1 |
In a magnetoresistive element having a quadruple interface, the resistance area product RA is small, the magnetoresistive ratio is large, and the effective magnetic anisotropy energy density K.efft*Also provides a large magnetoresistive ...
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JP6949834B2 |
A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angle...
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JP2021155847A |
To provide an electromagnetic wave attenuation body capable of improving attenuation characteristics for electromagnetic wave, an electronic device, a film deposition device, and a film deposition method.An electromagnetic wave attenuati...
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JPWO2020090719A1 |
The spin torque generating element 10 includes a conductor layer 1 to which a current Jc is supplied, an insulating layer 2 formed on one surface of the conductor layer 1, and a ferromagnetic layer formed on the other surface of the cond...
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JP6941085B2 |
A sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first...
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JP6943019B2 |
A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a...
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JP2021145078A |
To provide a magnetic memory element capable of stably maintaining information recorded by magnetization vertical to a recording layer.A magnetic memory element 10 including a recording layer 11 having a ferromagnetic substance and a pai...
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JP2021132110A |
To provide a domain wall displacement element and a magnetic recording array, having less leakage magnetic field.A domain wall displacement element according to a present embodiment comprises: a magnetic recording layer containing a stre...
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JP2021523576A |
The present invention has a general composition XaX'bYcZd[In the equation, X and X'represent a 3d transition metal with unpaired electrons, independent of each other; Y is a group 5, 8, 9, or 10 4d or 5d transition metal, Z is 13, It is ...
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JP2021128814A |
To provide a device comprising a BiSb layer having a high spin hole angle and a high conductivity.A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer 10 formed on the substrate, and a bism...
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JP6930230B2 |
To provide a novel metal/insulator nano-granular thin film with a high heat resistance, and a thin film magnetic sensor arranged by use thereof.A metal/insulator nano-granular thin film comprises: ferromagnetic particles; and an insulati...
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JPWO2020059542A1 |
Provision of skyrmion circuits and methods for manufacturing skyrmion circuits. The skyrmion circuit (1) patterns the circuit part (1A) in which the skyrmion can exist and the skyrmion is propagated and the non-circuit part (1B) in which...
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JP6923881B2 |
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...
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JP6921691B2 |
A semiconductor device including a semiconductor element and a first member is provided. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic plan...
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JP6923185B2 |
To provide a hard magnetic material capable of exhibiting good uniaxial magnetic anisotropy without using any rare earth element or noble metal element.A hard magnetic material is based on a tetragonal FeCoV based alloy having a composit...
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