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WO/2000/055384A1 |
The inventive method and the corresponding device (2) are used to coat a support body (3) with a hard magnetic SE-FE-B layer (4) (SE = rare earth, FE = ferromagnetic element; especially NdFeB) with a relatively large thickness by using a...
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WO/2000/055871A1 |
A thin film which mainly comprises a hexacyano complex containing vanadium and chromium provides a transparent or colored thin film of a molecular magnetic material having a high Tc.
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WO/2000/052489A1 |
A magnetic sensor comprises (1) a support base, (2) a ferromagnetic tunnel junction device having a first magnetic layer on the support base, a tunnel insulating layer containing aluminum oxide, formed on the first magnetic layer by sput...
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WO/2000/052713A1 |
Magnetic materials having a coercivity not less than about 1000 Oersted are prepared in a single step procedure. A molten mixture of a desired composition having a relatively high boron content is cooled at a rate slower than about 10?5Â...
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WO/2000/050912A1 |
The invention relates to a decoupled GMR sensor which is characterised by at least one ferromagnetic layer and one laterally structured layer (1), comprising ferro and antiferromagnetic domains (2, 3). Said laterally structured layer is ...
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WO/2000/048180A1 |
A magneto-optical recording medium that remarkably reduces the amount of time and energy required for writing and reading while maintaining high-density recording, thus providing a compact and energy-saving magneto-optical recording devi...
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WO/2000/038191A1 |
An improved and novel fabrication method for magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line...
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WO/2000/034946A1 |
A bottom spin valve sensor employs a seed layer (201) for a nickel oxide (NiO) antiferromagnetic pinning layer (212) for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve o...
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WO2000005712A9 |
A method and apparatus for dissipating heat generated in a sensor element of a vertical magnetoresistive recording head or flux guide magnetoresistive recording head having a recess formed in the lower and/or upper magnetic shields for e...
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WO/2000/028342A1 |
A disk drive system having a magnetic tunnel junction (MTJ) sensor (600) having two MTJ stacks between first and second shields and a common electrode disposed between the two MTJ stacks. A first sense current (11) is provided to the fir...
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WO/2000/026683A1 |
A magnetoresistive magnetic field sensor comprises a bilayer with a first soft magnetic layer and in direct contact therewith a second soft magnetic layer. The layers are exchange coupled to one another. The second soft magnetic layer is...
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WO/2000/025307A1 |
A GMR stack has at least two ferromagnetic layers (e.g., CoFe) spaced from each other by a nonferromagnetic layer (e.g., Cu). A layer of a phase-breaking material (such as Ta or a Ta-base alloy) between the nonferromagnetic layer and at ...
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WO/2000/019441A2 |
The invention relates to a magnetoresistive memory having improved interference immunity while keeping the chip surface small. Interference immunity is improved by arranging word lines vertically between two complementary bit lines. Also...
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WO/2000/019226A1 |
A magnetoresistive (GMR) sensor includes a substrate and a first trilayer disposed on the substrate. A first spacer layer is disposed on the first trilayer. A first magnetic layer is disposed on the first spacer. A second spacer layer is...
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WO/2000/017915A1 |
The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body (1) having a coil (3) with a magnetic core (4). By means of this method, the surface is provided with a first metallization layer (...
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WO/2000/017666A1 |
The invention relates to a magnetoresistive sensor element, especially an angular sensor element, having a first magnetic layer (1) whose magnetization direction represents a direction reference, a second non magnetic layer (2) formed on...
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WO/2000/017863A1 |
A magnetoresistive sensor (30) and a method of producing the magnetoresistive sensor (30) using electrochemical deposition are disclosed. An insulated substrate (11) is coated with a conductive coating (12) to ready the insulated substra...
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WO/2000/014768A1 |
An electromagnetic field generator and method of operation for ion beam deposition of magnetic thin-film materials is presented. A combination of open frame electromagnetic field generator elements provides precise control of magnetic fi...
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WO/2000/014732A2 |
The invention relates to a method for modifying the magnetizing direction (M) of a thin film. An electric field (H) with a field component that is perpendicular to the surface of the field is produced.A magnetizing direction is produced ...
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WO/2000/014748A1 |
The invention relates to a magnetoresistive element in which a non-magnetic layer element (3) is arranged between a first ferromagnetic layer element (1) and a second ferromagnetic layer element (2). Said non-magnetic layer element (3) c...
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WO/2000/013194A1 |
A magnetoresistive material with two metallic magnetic phases. The material exhibits the giant magnetoresistance effect (GMR). A first phase of the material includes a matrix of an electrically conductive ferromagnetic transition metal o...
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WO/2000/010023A1 |
A strongly miniaturizable magnetic field sensor is based on four spin tunnel junctions, together forming a Wheatstone bridge. The magnetically sensitive electrode functions as well as a laminated flux concentrator, resulting in a low noi...
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WO/2000/010024A1 |
A sensor or a memory element comprises a fixed or free ferromagnetic layer. To increase the ease of writing the free layer (for memories) or the fixed layer (for sensors) the layer to be written or switched comprises multilayer configura...
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WO/2000/010178A1 |
According to the invention, a magnetoresistive element has a first ferromagnetic layer element (11), a non-magnetic layer element (13) and a second ferromagnetic layer element (12) disposed in such a way that the non-magnetic layer eleme...
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WO/2000/010022A1 |
It is proposed to make thin film magnetic field sensors with perpendicular axis sensitivity, based on a giant magnetoresistance material or a spin tunnel junction, by making use of ferromagnetic layers that have strongly different uniaxi...
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WO/2000/005693A2 |
A security device such as an anti-pilferage label or authentication label comprises as security feature a (first) soft-magnetic thin film having a thickness ranging from 100 nm to 2000 nm. The thin film is composed of an amorphous Co¿x?...
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WO/2000/004591A1 |
A low resistance magnetic tunnel junction with low resistance barrier layer and method of fabrication is disclosed. A first magnetic layer of material with a surface is provided and a continuous layer of material, e.g. aluminum, is forme...
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WO/2000/004592A1 |
A method of fabricating a magnetoresistive tunnel junction including forming a thin, continuous layer of aluminum alloy (15) on the surface of a first magnetic layer (11), the continuous layer of aluminum alloy including greater than 90 ...
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WO/1999/067828A1 |
A first magnetic layer, a second magnetic layer and a tunnel barrier layer are deposited in sequence to form a magnetic tunnel device. The device includes an area where the change in magnetic resistance ratio with the change in the volta...
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WO/1999/067099A1 |
A transfer web or tape for transferring discrete areas of a magnetic film from the tape to a substrate is disclosed, the web or tape comprising: (i) a backing layer; (ii) a release layer carried on one face of said backing layer; (iii) a...
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WO/1999/062068A2 |
The invention relates to a magnetic memory for binary data, such as has been produced up until now in the form of a hard drive or an interchangeable data support. The aim of the invention is to produce a predeterminable increase in the c...
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WO/1999/056074A2 |
Element comprising a substrate (101) having a layer structure (103) bounded by two parallel main faces (105a, 105b) with at least two layers of mutually different magnetical behavior. The layer structure has a zone (109) which, viewed in...
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WO/1999/045405A1 |
A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor (23) supported on a substrate electrically isolated from one another b...
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WO/1999/041792A1 |
The invention concerns a magnetoresistor with tunnel effect comprising, in the form of a stack: a first magnetic material layer (12) with free magnetisation; an electric insulant material layer (16), called barrier layer; and a second ma...
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WO/1999/032896A1 |
A spin valve sensor (10) and a method of sensor include a stack having a first layer of ferromagnetic material (19) and a second layer of ferromagnetic material (25), with the second layer of ferromagnetic material having a thickness of ...
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WO/1999/031659A1 |
The present invention relates to a magnetic information storage and retrieval device, using e.g. the Kerr effect or the giant magneto-resistance (GMR) effect. The device comprises at least one magnetic layer for storing information. The ...
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WO/1999/027379A1 |
The invention concerns a magnetic sensor comprising a non-magnetic insulating layer (2) including at least a layer of ferromagnetic particles (4), the assembly being enclosed between two ferromagnetic electrodes (2, 3). For its operation...
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WO/1999/024973A1 |
The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The r...
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WO/1999/017319A1 |
The invention concerns a method for increasing the operating frequency of a magnetic circuit and corresponding magnetic circuit. The method is characterised in that it consists in forming breaks at least in one part of the circuit. Said ...
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WO/1999/008265A1 |
A spin bulb magnetoresistant element provided with a free layer of a magnetic layer, a pinned layer of a magnetic layer, a non-magnetic layer interposed therebetween, and a permanent magnet film for controlling the magnetic domains of th...
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WO/1998/052202A1 |
At the time of patterning a magnetic garnet film formed on the surface of a nonmagnetic garnet substrate, a magnetic garnet film, an intermediate layer, and a resist layer are successively formed on the surface of the substrate in this o...
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WO/1998/047613A1 |
Methods and apparatus for the preparation of a substrate (2) having an array of diverse materials in predefined regions thereon. A substrate (2) having an array of diverse materials thereon is generally prepared by depositing components ...
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WO/1998/036105A1 |
A film deposition apparatus of an artificial lattice multi-layered film for depositing a gigantic magnetoresistive film (GMR film) having an artificial lattice structure formed by alternately laminating magnetic metal films and non-magne...
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WO/1998/025263A1 |
A magneto-electronic device comprising a substrate (1) on which a first body (21) and a second body (22) of magnetic material are provided, whereby the magnetization (M�2?) of at least the second body (22) is not fixed, the two bodies ...
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WO/1998/024944A1 |
A multilayered material has an amorphous or polycrystalline layer, a textured buffer layer and an oriented thin layer. At least one covering layer is further contained between the buffer layer and the thin layer. In a process for produci...
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WO/1998/023923A1 |
A non-contact transducer defining a potentiometer has an elongated anti-ferromagnetic substrate (1) carrying a lower ferromagnetic layer (2), an electrically insulating layer (3), an upper ferromagnetic layer (4) and an upper, non-magnet...
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WO/1998/022942A1 |
Theres is disclosed a magnetic recording medium which includes a magnetizable layer thereon, wherein said magnetizable layer comprises a plurality of ferri- or ferromagnetic particles each having a largest dimension no greater than 100nm...
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WO/1998/022636A1 |
A sputtering target which is substantially composed of at least one R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re, and Mn. The target contains at least one kind of alloy or compoun...
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WO/1998/020496A1 |
A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses (12, 13, 13'...
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WO/1998/012758A1 |
A structure of a novel magneto-resistance effect device having a higher MR change than the conventional ones. The device comprises a multilayer film (3) having a multilayer structure in which a non-magnetic conductive layer (5) is sandwi...
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