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JP7183703B2 |
To provide a spin orbit torque type magnetization rotation element capable of causing magnetization rotation without applying an external magnetic field without increasing a current flowing through a spin orbit torque wiring layer.A spin...
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JP2022178753A |
To provide a ferromagnetic thin film laminate having a novel configuration which has isotropic magnetic properties in the film plane as a whole laminate structure and which can be used for electronic equipment.A ferromagnetic thin film l...
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JP2022179429A |
To provide a two-dimensional structural composite material and a manufacturing method for the same, two-dimensional structural composite material being a two-dimensional structural material and other functional materials that may improve...
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JP7181064B2 |
To provide a ferromagnetic thin film which can promote the high magnetic permeability to be brought about by a ferromagnetic thin film having a nano granular structure.A ferromagnetic multilayer film has a structure in which ferromagneti...
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JP2022173700A |
To provide a magnetic recording medium capable of containing magnetic particles having a fine crystal gain size in a surface layer of a magnetic recording layer and in the vicinity thereof.A magnetic recording medium according to the pre...
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JP7169683B2 |
The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non-magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling i...
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JP7169135B2 |
To improve purity of the soft magnetic ferrite part of a soft magnetic ferrite composite material.A production method of soft magnetic ferrite composite material where a soft magnetic ferrite part is formed on the surface of a backing ma...
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JP7166615B2 |
To provide a rare earth magnet having excellent coercive force, a film, a laminate, a manufacturing method for a rare earth magnet, a motor, a generator, and an automobile.A rare earth magnet has a main phase and a grain boundary phase a...
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JP2022166663A |
To provide a thin film laminate that can be used for a tunnel magnetoresistive element or the like.A thin film laminate according to the present invention includes a base portion formed on a substrate and a function portion formed on the...
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JP2022166395A |
To provide an electronic device capable of eliminating a need for an external magnetic field, being available for a random number generation element or a memory element that can output relatively large reading signals and also available ...
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JP7161282B2 |
An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is...
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JP7160705B2 |
According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of no...
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JP7160945B2 |
An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr ...
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JP7157573B2 |
In order to provide a Ni-based alloy for a seed layer, the alloy enabling achievement of a seed layer that exhibits enhanced alignment to the (111) plane and that has a fine crystal grain size, a sputtering target which contains said all...
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JP2022158650A |
To perform high-speed reversal and control of the magnetization direction of a ferromagnetic body.A magnetization control device (1) includes a first ferromagnetic body (2) magnetized in a first direction and a first non-magnetic metal (...
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JP2022158651A |
To reverse the magnetization of a ferromagnetic metal layer on the basis of spin-orbit torque magnetization reversal with a simple configuration.A magnetization control device (1) includes a first non-magnetic metal (2) extending in the ...
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JP2022159318A |
To provide a sputtering target, a method for producing a laminated film, a laminated film and a magnetic recording medium, which can improve magnetic separation between magnetic particles without significantly lowering the magnetic aniso...
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JP7153634B2 |
A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb2O5 as a met...
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JP7149055B2 |
To provide a ferromagnetic exchange coupling element and a manufacturing method thereof that can realize ferromagnetic exchange coupling with a material without heat resistance with high manufacturing efficiency and can be applied to var...
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JP7142362B2 |
A magnetic element is formed from a magnetic material, which is a material that is capable of generating a magnetic skyrmion, and a defect is introduced at a position corresponding to each side of an approximate triangle in plan view. A ...
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JP2022138531A |
To provide a magnetic detection element capable of improving sensitivity.A magnetic detection element having a magnetic layer 40 includes a substrate 10, an insulating film 20 arranged on the substrate 10, and a magnetic layer 40 arrange...
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JP2022139448A |
To provide a magnetic functional element utilizing a transition metal oxide that has a high Curie temperature and a magnetic exchange bias that develops at a high temperature and that exhibits a large magnetic exchange bias, and a magnet...
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JP2022139920A |
To increase output of a magnetic sensor.A magnetic sensor 1 includes a ceramic substrate 2, a GMR layer 5, and an underlying layer 4. The ceramic substrate 2 includes a substrate body 20 and a grace layer 3. The substrate body 20 include...
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JP7136492B2 |
The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element...
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JP7133392B2 |
To provide a ferromagnetic thin film or the like capable of enhancing an effect such as a high magnetic permeability or the like, achieved by a ferromagnetic thin film having a nano granular structure.A ferromagnetic laminated film inclu...
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JP7131835B2 |
The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.
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JP2022537980A |
A method and device for controlling switching trajectories in a spin-orbit torque device, the three-terminal device comprising a magnetic tunnel junction (MTJ) and a spin-orbit torque (SOT) generating layer. The MTJ has a first magnetic ...
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JP2022122287A |
To provide a dense magnetic complex with relatively great film thickness, which is excellent in magnetic characteristics and electrical characteristics, and which comprises a ferrite layer with proper adhesion.A magnetic complex comprise...
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JP7122260B2 |
A sputtering target according to the present invention contains Co and one or more metals selected from the group consisting of Cr and Ru, as metal components, wherein a molar ratio of the content of the one or more metals to the content...
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JP2022118907A |
To provide an electronic device that can enhance practicality of an inductor element which utilizes a degree of freedom of spins of electrons and is easily made compact, and also has high practicality.An inductor element 10 comprises a m...
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JP2022109474A |
To provide a soft magnetic alloy that contains Co, and has higher saturation magnetic flux density Bs and does not significantly increase coercive force Hc as compared with the case that does not contain Co.There is provided a soft magne...
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JP7107285B2 |
A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure...
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JP2022108267A |
To provide a magnetic structure, a magnetic device incorporating the magnetic structure, and a method for providing the magnetic structure.The magnetic structure includes a magnetic layer, a templating structure, and a resistive insertio...
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JP7104068B2 |
A position detection element includes an exchange coupling film having a large exchange coupling magnetic field and a position detection apparatus showing good detection accuracy in a high temperature environment. The position detection ...
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JP7102448B2 |
Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. Th...
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JP2022102900A |
To provide a magnetization control device capable of increasing the speed and energy saving by increasing a spin bias.A magnetization control device (1) includes a nonmagnetic metal (3), a first ferromagnetic body (2) formed on a portion...
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JP2022102864A |
To improve sensitivity of a magnetic sensor that makes use of the magnetic impedance effect.A magnetic sensor 1 is provided, comprising: a nonmagnetic substrate; and a magnetic sensitive element having a soft magnetic material layer 101 ...
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JP2022094518A |
To provide: an FeSiAl alloy thin film having good soft magnetic characteristics and capable of being used for a free layer of an MTJ element, and a method for producing an FeSiAl alloy thin film; and a magnetic sensor in which an FeSiAl ...
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JP7090060B2 |
A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnet...
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JP7086664B2 |
According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxid...
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JP2022085978A |
To provide nano magnetic particles having magneto-optical properties similar to those of nano granular structural materials and a manufacturing method of the same.A nano granular structural material is prepared by dispersing nano particl...
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JP7081842B2 |
The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided wi...
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JP7081694B2 |
A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.
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JP7076555B2 |
Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.
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JP7070020B2 |
To provide a magnetic path formation member which can increase the accuracy of alignment.The magnetic path formation member includes: a material 10A made of a non-magnetic material; and a first magnetic film 11A and a second magnetic fil...
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JP2022073039A |
To provide a spin element with high operating efficiency, a magnetic array, and a method for manufacturing the spin element.A spin element has a wiring extending in the first direction, a laminate stacked on the wiring and including a fi...
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JP2022069247A |
To provide a magnetic tunnel junction element that is usable even at operation temperatures over a wide range of -40 to +150°C, and has low electric power, high-speed inversion and high-reliability properties, and a magnetoresistive mem...
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JP7055319B2 |
To provide a magnetic element capable of increasing field effect.A magnetic element includes a first region, a second region having a thickness less than that of a 3 atomic layers, and a third region. The second region is located between...
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JP7055935B2 |
A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing laye...
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JP2022059919A |
To provide an integrated device and a neuromorphic device with a small variation in performance of each domain wall motion element.An integrated device according to an embodiment comprises a substrate and a lamination structure laminated...
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