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WO/2021/003755A1 |
Disclosed is a polished quartz crystal frequency wafer with a boss structure on an edge, the polished quartz crystal frequency wafer comprising an original wafer in the form of a rectangular block, with the boss structure being arranged ...
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WO/2021/006056A1 |
A purpose of the present invention is to reduce spurious emissions. An elastic wave device (1) comprises a support substrate (4), a piezoelectric body layer (6), and an IDT electrode (7). The support substrate (4) is formed from crystal....
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WO/2021/006023A1 |
The present invention achieves a decrease in the size of a high-frequency component provided on a main surface of a mounting substrate on which an external connection electrode is disposed. A high-frequency module (1) is provided with a ...
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WO/2021/002321A1 |
An elastic wave filter (1) that comprises: a split resonator group (11) and series arm resonators (12, 13, 14), arranged upon a path connecting an I/O terminal (110) and an I/O terminal (120); and parallel arm resonators (21, 22, 23) arr...
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WO/2021/002382A1 |
The present invention suppresses harmonic distortion. This elastic wave device (1) comprises: a silicon substrate (2); a piezoelectric layer (4); and an IDT electrode (5). The silicon substrate (2) has a first main surface (21) and a sec...
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WO/2021/002046A1 |
[Problem] To provide a bonded body which enables improvement of the Q value of an acoustic wave element. [Solution] A bonded body 9A according to the present invention is provided with a supporting substrate 6, a piezoelectric material s...
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WO/2021/002434A1 |
The present invention comprises a substrate, an electrode film, and a piezoelectric film which is a polycrystalline film comprising an alkali niobate having a perovskite structure represented by the compositional formula (K1-xNax)NbO3 (0...
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WO/2021/002047A1 |
[Problem] To provide a joined body that enables improvement of a Q value of an elastic wave element. [Solution] A joined body 9A includes a support substrate 6, a piezoelectric material substrate 1A, and a silicon oxide layer 2 between t...
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WO/2020/261808A1 |
This elastic wave filter (10) comprises: an input terminal (T1); an output terminal (T2); a series arm circuit (20); and a parallel arm circuit (30). The series arm circuit includes a first series arm resonator (S1) and a second series a...
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WO/2020/259661A1 |
The present invention provides a high-frequency surface acoustic wave resonator and a preparation method therefor. The high-frequency surface acoustic wave resonator comprises: a high-wave-velocity supporting substrate, a piezoelectric f...
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WO/2020/258177A1 |
A differential resonator (1), comprising a substrate (10), a first resonator (11), a second resonator (12), and a coupling mechanism (14). The first resonator (11) is connected to the second resonator (12) by means of the coupling mechan...
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WO/2020/262388A1 |
Provided is a filter device in which insertion loss is reduced. A filter device 1 is provided with: a piezoelectric substrate 2 including a high acoustic velocity support substrate 13 (high acoustic velocity material layer) and a piezoel...
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WO/2020/261819A1 |
The present invention provides a high-frequency module and a communication device that are capable of suppressing deterioration of a noise index of a low-noise amplifier. A high-frequency module (1) is provided with a mounting substrate ...
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WO/2020/263254A1 |
A filter is provided. The filter (100) includes a cascade of coupled acoustic wave resonators (110-1,... 110-i) between an input terminal (120) and an output terminal (130) of the filter. The acoustic wave resonators are three terminal r...
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WO/2020/261707A1 |
A method for manufacturing a ceramic substrate having a recess part on the upper surface, the method having: a step for cutting a mother laminate, which is obtained by laminating a plurality of ceramic green sheets, in a direction that f...
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WO/2020/262023A1 |
Provided is a composite filter device comprising first and second filters with which it is possible to further reduce insertion loss in a second filter having a high relative passband. A composite filter device 1 is provided with: a piez...
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WO/2020/261630A1 |
The present invention reduces stress applied to a connection portion between a support arm and a holding part. This resonance apparatus is provided with: a resonator including a base, a vibration arm extending from one end of the base al...
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WO/2020/263659A1 |
Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The secon...
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WO/2020/262607A1 |
Provided is an elastic wave device in which a substrate has a piezoelectric predetermined region on a first major surface facing one side in a direction normal to the substrate. An excitation electrode is positioned in the predetermined ...
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WO/2020/261763A1 |
Provided is an elastic wave device in which ripples due to transverse mode can be more effectively suppressed. An elastic wave device 10 constituted by first and second elastic wave resonator units, wherein: the first elastic wave reso...
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WO/2020/258334A1 |
A resonator and a preparation method therefor. The resonator comprises a silicon substrate (1), a bottom electrode (3) stacked on part of the silicon substrate (1), a piezoelectric layer (4) covering the bottom electrode (3) and part of ...
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WO/2020/261978A1 |
The objective of the present invention is to provide a surface acoustic wave device which has excellent electric power resistance and linearity, and with which unwanted waves can be suppressed. A surface acoustic wave device 1 is provi...
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WO/2020/262472A1 |
An electronic component housing package 100 comprises: an insulating substrate 101 having a major surface; an external connection conductor 105 partly exposed on the major surface; and an inner layer conductor 107 positioned on the inner...
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WO/2020/255474A1 |
A resonance device 1 is provided with: an MEMS substrate 40 including a resonator 10; an upper lid 30 provided to seal an oscillation space S of the resonator 10; and a grounding part 50 located between the MEMS substrate 40 and the uppe...
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WO/2020/255520A1 |
The present invention further improves confinement of vibration. This resonator (10) comprises: a vibration unit 120 that includes an Si substrate F2 in which one main surface has an X-axis-direction width W and a Y-axis-direction length...
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WO/2020/254090A1 |
The invention relates to a temperature-controlled RF resonator (200) comprising a thermally insulating enclosure (110) inside which the following are implemented: - at least one resonating element (120) configured to deliver an RF output...
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WO/2020/252962A1 |
An acoustic wave device and a preparation method therefor, and a temperature control method of the acoustic wave. The preparation method comprises: respectively providing a first substrate and a second substrate (S110); forming an acoust...
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WO/2020/250490A1 |
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material substrate is thin. [Solution] A composite...
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WO/2020/250491A1 |
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate formed from lithium tantalate or the like to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material...
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WO/2020/250734A1 |
The present invention improves both the filter characteristic at the time of transmission and filter characteristic at the time of reception of one filter. A filter (2) allows a transmission signal in a predetermined frequency band to pa...
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WO/2020/250572A1 |
Provided is an elastic wave device less likely to experience surge destruction. A dielectric film 4 is provided so as to cover an IDT electrode 3. The IDT electrode 3 has: a first and a second edge region E1, E2, which are low-speed-of...
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WO/2020/244332A1 |
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode provided over the substrate; a top electrode provided oppositely to the bottom electrode and having an electrode ...
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WO/2020/244254A1 |
A bulk acoustic wave resonator, comprising: a substrate (201); an acoustic mirror (203); a bottom electrode (205) arranged above the substrate (201); a top electrode (209) arranged opposite the bottom electrode (205) and provided with an...
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WO/2020/241776A1 |
Provided is an elastic wave device that can effectively suppress higher-order modes. This elastic wave device 1 comprises a support substrate 4 that comprises silicon, a piezoelectric layer 6 that is provided directly or indirectly on ...
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WO/2020/238508A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode provided above the substrate, a top electrode having an electrode connection portion, and a piezoelectric layer pr...
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WO/2020/238509A1 |
A bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode, provided on the substrate; a top electrode (50), opposite to the bottom electrode and having an electrode connection portion; and a piezoele...
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WO/2020/241849A1 |
This crystal element comprises: an oscillating section having a first surface and a second surface; a flat plate section having a first surface and a second surface, having a thickness greater than that of the oscillating section, and be...
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WO/2020/241820A1 |
Provided is a wiring electrode capable of suppressing alloying between metal layers, and capable of enhancing reliability. The wiring electrode 1 according to the present invention, which is a wiring electrode provided on a piezoelectr...
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WO/2020/238296A1 |
A bulk acoustic resonator, comprising a substrate (10), an acoustic mirror (20), a bottom electrode (30) provided above the substrate (10), a top electrode (50) which is opposite the bottom electrode (30) and has an electrode connection ...
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WO/2020/241790A1 |
[Problem] To reduce spurious signals and improve electrical characteristics in a piezoelectric vibration plate with a frame, in which a vibration unit and an outer frame are linked by a holding unit, and in a piezoelectric vibration devi...
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WO/2020/243201A1 |
A method of tuning a resonant frequency of a nano-electromechanical systems (NEMS) drum device is performed by applying a gate voltage between the drum membrane [100] and a back gate [104] to alter the resonant frequency of the membrane ...
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WO/2020/238696A1 |
The embodiment of the present disclosure provides a flexible electro-acoustic substrate and a preparation method therefor, as well as a flexible electro-acoustic device. The preparation method for the flexible electro-acoustic substrate ...
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WO/2020/238286A1 |
Provided in the present application are a resonant thin film layer, a resonator and a filter; the resonant thin film layer comprises a first electrode layer disposed on a first wafer, a piezoelectric layer disposed on the first electrode...
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WO/2020/232914A1 |
A thin film piezoelectric sonic sensor, comprising: a substrate layer (2), a ground electrode layer (3), and a piezoelectric layer (4) which are stacked. At least one transducer (5) is provided on the side of the piezoelectric layer (4) ...
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WO/2020/234238A1 |
A BAW resonator with reduced losses is provided. The BAW resonator (BAWR) has a first gap (G1) arranged between the piezoelectric material (PM) and a first electrode (EL1) selected from the bottom electrode (BE) and the top electrode (TE...
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WO/2020/233977A1 |
An acoustic delay component providing a large bandwidth and a high center frequency together with a low insertion loss is provided. The delay component comprises two or more functional cells (FC1, FC2. FC3) arranged in a transducer (TD) ...
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WO/2020/228284A1 |
The present invention provides a method for preparing a solid reflection type bulk acoustic wave resonator, comprising the following steps of: taking a piezoelectric material subjected to ion implantation, growing a reflection layer belo...
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WO/2020/230484A1 |
A piezoelectric device (100) is provided with a base board (110), a piezoelectric element (120), and a lid portion (130). The piezoelectric element (120) includes a base portion (121) and a membrane portion (122). The base portion (121) ...
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WO/2020/228152A1 |
Provided are an air-gap-type semiconductor device packaging structure and a manufacturing method therefor. The manufacturing method comprises: forming, on a carrier (100), a bonding layer (101) with a first bonding layer opening (110'), ...
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WO/2020/232458A1 |
A method of forming a piezoelectric film can include providing a wafer in a CVD reaction chamber and forming an aluminum nitride material on the wafer, the aluminum nitride material doped with a first element E1 selected from group IIA o...
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