| Document |
Document Title |
|
WO/2021/034365A1 |
A resonator that includes a substrate with a cavity that extends in a principal surface thereof and a vibrating resonator above the principal surface of the substrate and including bottom and top electrodes with a piezoelectric layer dis...
|
|
WO/2021/028281A1 |
A micro-acoustic wave device is proposed for application in ultrahigh frequency range. The device uses a thin film piezoelectric material stacked on a carrier substrate. Additionally, a material is embedded between carrier substrate and ...
|
|
WO/2021/027319A1 |
A bulk acoustic wave resonator, comprising: a substrate (110); an acoustic lens (120); a bottom electrode (130) that is disposed above the substrate (110); a top electrode (150) that is arranged opposite to the bottom electrode (130) and...
|
|
WO/2021/027671A1 |
A bulk acoustic wave filter for improving near stopband suppression and an electronic device. Sealing rings (3) are connected to the reference ground plane of a carrier plate (5) by means of solder balls (6), so as to eliminate the coupl...
|
|
WO/2021/027673A1 |
The present invention relates to the technical field of filters, and in particular relates to a packing structure of a bulk acoustic wave filter and a method. The packaging structure comprises a first chip, which is provided with a plura...
|
|
WO/2021/030289A1 |
A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate...
|
|
WO/2021/028273A1 |
Cascades of SAW resonators with different apertures can reduce the effects of unwanted transversal modes and other spurious modes of the SAW resonator. As part of a filter circuit cascades of SAW resonators have the potential to improve ...
|
|
WO/2021/027320A1 |
The present invention relates to a film bulk acoustic resonator, comprising: a substrate; an acoustic mirror cavity; a bottom electrode; a top electrode; and a piezoelectric layer. An area where the acoustic mirror cavity, the bottom ele...
|
|
WO/2021/027321A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, an acoustic lens, a bottom electrode, a top electrode, and a piezoelectric layer, wherein an overlapped region of the acoustic lens, the bottom electrode...
|
|
WO/2021/023484A1 |
An electroacoustic resonator comprises a substrate (3) with a piezoelectric material and an interdigital electrode structure on a top side (33) of the substrate. The electrode structure comprises a first electrode (1) and a second electr...
|
|
WO/2021/025004A1 |
[Problem] To provide an elastic wave device with which it is possible to obtain good characteristics in ultra-high frequency bands of 6 GHz or higher, while maintaining sufficient mechanical strength. [Solution] An elastic wave device co...
|
|
WO/2021/024993A1 |
Provided is an elastic wave device in which a partition support member does not readily dig into a cover member. An elastic wave device 10, provided with: a piezoelectric substrate 4 having a first side 4a constituting a part of the ou...
|
|
WO/2021/024762A1 |
Provided is an elastic wave filter device capable of improving steepness, and increasing the amount of attenuation outside a passband in a broad frequency range near the passband. The elastic wave filter device 1 comprises: a first sig...
|
|
WO/2021/021747A1 |
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An acoustic wave device may include a substrate. The acoustic wave device may include first and second l...
|
|
WO/2021/018770A1 |
A BAW resonator (RN) with reduced lateral modes is provided. The resonator has an active stack of bottom electrode (BE), piezoelectric material (PM) and top electrode (TE) and at least one element of this active stack has a curved side w...
|
|
WO/2021/021745A1 |
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electri...
|
|
WO/2021/021736A1 |
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoust...
|
|
WO/2021/020102A1 |
This elastic wave device comprises: a substrate; a multilayer film located on the substrate; a piezoelectric film located on the multilayer film; and a first excitation electrode and a second excitation electrode located on the piezoelec...
|
|
WO/2021/021743A1 |
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable ...
|
|
WO/2021/018543A1 |
A filter device having a reduced sensitivity to production tolerances comprises a multilayer panel with integrated wiring, a piezoelectric substrate mounted to the panel. A first filter circuit (FC1) and a signal path (SP) comprising a s...
|
|
WO/2021/021739A1 |
Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acou...
|
|
WO/2021/021732A1 |
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled...
|
|
WO/2021/021748A1 |
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate a...
|
|
WO/2021/019932A1 |
This crystal vibrator (1) is provided with: a crystal vibrating element (10) having excitation electrodes (14a, 14b) and connection electrodes (16a, 16b) electrically connected to the excitation electrodes (14a, 14b); a base member (30) ...
|
|
WO/2021/018568A1 |
The invention relates to a method for producing a plurality of sealed functional elements, in particular hermetically sealed functional elements, the method comprising the following steps: providing a first wafer comprising the plurality...
|
|
WO/2021/012923A1 |
Provided are a thin film bulk acoustic resonator and a fabrication method therefor, the method comprising: successively forming a first electrode layer, a piezoelectric material layer and a second electrode layer on a first substrate, th...
|
|
WO/2021/012379A1 |
Provided is a method for manufacturing a thin-film bulk acoustic wave resonator. In said manufacturing method, a bulk acoustic wave film (120) and a support structure (130) are sequentially formed on a first substrate (100); the support ...
|
|
WO/2021/013568A1 |
An electro acoustic resonator with reduced spurious modes comprises an interdigital transducer with two bus bars and interdigitated electrode fingers and a wave guide structure to excite a piston mode in the resonator. With adjacent inne...
|
|
WO/2021/012377A1 |
Provided are an encapsulation method and an encapsulation structure for a bulk acoustic resonator. A resonator cover body (30) is manufactured by means of forming, on a second substrate (300), an elastic bonding material layer (301) prov...
|
|
WO/2021/013571A1 |
The RF receiving filter, RX filter (Rx), comprises an input port (A) for receiving a radio frequency signal from an antenna (Ant) and an output port (R) on which the filtered radio frequency signal is provided. The RX filter (Rx) compris...
|
|
WO/2021/012376A1 |
A packaging method and a packaging structure for a bulk acoustic resonator. An elastic bonding material layer (301) having a second cavity (302) is formed on a second substrate (300), and is used to manufacture a resonator cover (30). Th...
|
|
WO/2021/012917A1 |
The present invention provides a film bulk acoustic resonator and a manufacturing method therefor, and a filter and a radio-frequency communication system. The film bulk acoustic resonator comprises: a first substrate; a support layer pr...
|
|
WO/2021/014669A1 |
[Problem] To provide a bonded body that enables Q value improvement of an acoustic wave element. [Solution] A bonded body 9A includes a support substrate 6, a piezoelectric material substrate 1A, and a multilayer film 22 between the supp...
|
|
WO/2021/012378A1 |
A thin-film bulk acoustic wave resonator and a fabrication method therefor. The thin-film bulk acoustic resonator is provided with a first segmented structure and a second segmented structure in a piezoelectric stack (120). The first seg...
|
|
WO/2021/012380A1 |
A packaging method and a packaging structure for a bulk acoustic resonator. In a resonator cover (30), a second cavity (302) is mainly formed from the combination of a recess (300a) in a second substrate (300) and a space bounded by an e...
|
|
WO/2021/015187A1 |
An elastic wave filter (1), provided with series arm resonators (s1, s2) comprising elastic wave resonators having an IDT electrode, and parallel arm resonators (p1, P2). The IDT electrode has a pair of comb electrodes comprising a plura...
|
|
WO/2021/012916A1 |
Disclosed are a film bulk acoustic resonator and a method for manufacturing same. The film bulk acoustic resonator comprises: a first substrate (100); a supporting layer (101) bonded to the first substrate (100); a first cavity (110a) fo...
|
|
WO/2021/008847A1 |
A SAW resonator with reduced spurious modes is provided. The resonator comprises a (111) silicon carrier substrate (CS), an electrode structure (ES) and a piezoelectric layer (PIL). The carrier substrate has a crystal orientation with th...
|
|
WO/2021/010164A1 |
An electronic component (100) comprises: a substrate (110); functional elements (120) formed on the substrate (110); columnar conductors (140) protruding from the substrate (100); a cover part (130) which is supported by the columnar con...
|
|
WO/2021/010379A1 |
An acoustic wave filter (40) is provided with a longitudinally coupled resonator (1) having a plurality of IDT electrodes and reflectors. When: [i] a distance between an electrode finger (Fe(k)) and an electrode finger (Fe(k+1)) is defin...
|
|
WO/2021/009008A1 |
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
|
|
WO/2021/010245A1 |
A filter body comprises: a series arm including a plurality of series resonators connected in series with each other; and one or more parallel resonators, the series arm and the one or more parallel resonators being connected in a ladder...
|
|
WO/2021/008186A1 |
A bulk acoustic resonator comprises: a substrate (10); an acoustic mirror (20); a bottom electrode (30) disposed on the substrate (10); a top electrode (70); a piezoelectric layer (50) disposed above the bottom electrode (30) and between...
|
|
WO/2021/005833A1 |
This piezoelectric vibrator (100) comprises a base member (30), a lid member (40), and a laminated structure (101) provided between the base member (30) and the lid member (40), wherein the laminated structure (101) includes: a piezoelec...
|
|
WO/2021/006156A1 |
Provided is an elastic wave device which can suppress separation of a cover member from support members, and which can suppress separation of the support members from a piezoelectric substrate. This elastic wave device 1 is provided wi...
|
|
WO/2021/003699A1 |
A manufacturing method for a bulk acoustic wave filter, comprising: sequentially forming acoustic reflection air chambers (2), seed layers (3), lower electrode layers (4), and piezoelectric layers (5, 5-1, 5-2, 5-3) of n resonators (201-...
|
|
WO/2021/004127A1 |
A bulk acoustic resonator, comprising: a substrate; an acoustic mirror (30); a bottom electrode (10) disposed on the substrate and having a bottom electrode metal connection layer (13); a top electrode (12) opposite to the bottom electro...
|
|
WO/2021/006073A1 |
Provided is a ladder-type filter capable of ensuring an adequate amount of attenuation in a frequency range different from the own band thereof, and in particular in a frequency range separated from the own band thereof. A ladder-type ...
|
|
WO/2021/006157A1 |
Provided is an elastic wave device that can suppress peeling of a cover member from a support member. The elastic wave device 1 comprises: a piezoelectric substrate 2; an IDT electrode 3 (excitation electrode) that is provided on the p...
|
|
WO/2021/006055A1 |
The present invention reduces spurious emissions. An acoustic wave device (1) according to the present invention comprises a support substrate (4), a piezoelectric layer (6), and an IDT electrode (7). The support substrate (4) is made of...
|
