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WO/2021/136282A1 |
The present application provides a filter and a method for improving filter performance and a signal processing device. Wherein, the filter comprises: a plurality of resonators, the plurality of resonators comprising a plurality of serie...
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WO/2021/135017A1 |
The present invention relates to a temperature-compensating layer structure, comprising a temperature-compensating layer, wherein the upper side of the end part of the temperature-compensating layer is an inclined surface so that the end...
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WO/2021/135016A1 |
Disclosed is a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode connected to a bottom electrode pin; a top electrode connected to a top electrode pin; a piezoelectric layer disposed between th...
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WO/2021/135022A1 |
Disclosed in the present invention is a bulk acoustic wave resonator, comprising: a substrate; a bottom electrode; a top electrode; a piezoelectric layer arranged between the bottom electrode and the top electrode; and an acoustic mirror...
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WO/2021/135010A1 |
The present invention relates to a bulk acoustic resonator component, comprising at least two bulk acoustic resonators provided on a same substrate, each resonator comprising: an acoustic mirror; a bottom electrode; a top electrode; and ...
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WO/2021/135015A1 |
Disclosed is a bulk acoustic wave resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein a mass load is a...
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WO/2021/134684A1 |
A film bulk acoustic resonator (1). The film bulk acoustic resonator (1) comprises: a substrate assembly (10), an acoustic reflection structure being formed on the surface of the substrate assembly (10); a piezoelectric film (30) dispose...
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WO/2021/135020A1 |
Disclosed in the present invention is a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer provided between the bottom electrode and the top electrode, whe...
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WO/2021/135134A1 |
A film piezoelectric acoustic wave resonator and a manufacturing method therefor and a filter. The film piezoelectric acoustic wave resonator comprises: a first substrate (50); a first electrode (20), a piezoelectric sheet (30), and a se...
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WO/2021/135019A1 |
Disclosed is a bulk acoustic resonator. The bulk acoustic resonator comprises: a substrate; a bottom electrode; a top electrode; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein the bottom el...
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WO/2021/136756A1 |
The present invention relates to a transducer structure with transverse mode suppression means, in particular for a single- port resonator, comprising a piezoelectric substrate (120, 170), in particular a composite substrate, at least a ...
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WO/2021/135018A1 |
The present invention relates to a semiconductor structure having a stacking unit, comprising: a protective layer; and multiple units sequentially stacked on the lower surface of the protective layer in the thickness direction of the pro...
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WO/2021/128694A1 |
The present invention relates to a reflectionless filter, comprising: a symmetrical two-port circuit, the circuit comprising series resonator branches and multiple parallel resonator branches, each series resonator branch being provided ...
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WO/2021/131125A1 |
Provided are a high-frequency module and a communication device capable of achieving more excellent impedance characteristics. A high-frequency module (1) is provided with: a first elastic-wave filter (first reception filter 3); a second...
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WO/2021/131121A1 |
A piezoelectric vibration element (10) comprising: a piezoelectric piece (11) having a main surface (11A); an excitation electrode (14a) which is disposed on the main surface (11A) of the piezoelectric piece (11); and a connection electr...
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WO/2021/127813A1 |
Disclosed in the present invention is an SMD resonator, comprising a base, a cover plate and a resonance sheet, wherein the base comprises a bottom plate and a side plate, and the base and the cover plate jointly define an accommodating ...
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WO/2021/128339A1 |
The present invention provides a film bulk acoustic resonator, comprising a first electrode, a second electrode positioned above the first electrode, a piezoelectric film between the first electrode and the second electrode, a substrate ...
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WO/2021/120499A1 |
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode, wherein ...
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WO/2021/120470A1 |
An ultrasonic sediment-removing vibration unit in a small irrigation ditch flow measuring device, which relates to the technical field of ultrasonic waves and comprises a sealed box (1), a metal cover plate (2), and a circuit board; the ...
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WO/2021/124955A1 |
[Problem] To provide a joint body of a diaphragm composed of high-rigidity ceramics and a support substrate, wherein a structure is provided that can prevent peeling or cracking of the diaphragm, while maintaining the strength of the dia...
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WO/2021/122479A1 |
Electroacoustic device (5) for generating at least one acoustic wave (Fv,Vx), the device comprising a piezoelectric substrate (10) and first (15) and second (20) groups of electrodes (60,65,70,75) arranged on the substrate, each electrod...
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WO/2021/120590A1 |
A thin-film piezoelectric acoustic wave resonator, a manufacturing method therefor, and a filter. The thin-film piezoelectric acoustic wave resonator comprises: a first substrate (50); an upper electrode (20), a piezoelectric plate (30),...
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WO/2021/125953A1 |
The present invention is in the field of an atomic force microscopy probe, which probes generally consist of four cooperating elements, namely a sharp tip to sense the surface, an optical resonator usually being a cavity, a drive usually...
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WO/2021/125013A1 |
Provided is an elastic wave device that can suppress spuriousness by higher-order modes. A elastic wave device 1 comprising a support substrate 2, a piezoelectric film laminated directly or indirectly on the support substrate 2, and an...
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WO/2021/122331A1 |
The present invention relates to a clock signal generator device (902) comprising: a micro-electromechanical resonant element (504); and at least one nano-electromechanical transduction element (512).
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WO/2021/121551A1 |
The present disclosure relates to an oscillator device (1, 1', 1'', 1''') comprising an active circuit device (2, 2'''), a circuit board (3) and a cavity resonator (4, 4'). The active circuit device (2, 2''') comprises an amplifier unit ...
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WO/2021/117272A1 |
This resonance device (1) comprises: a lower lid (20); an upper lid joined to the lower lid (20); and a resonator (10) that has vibration arms (121A-121D) capable of bending and vibrating inside an inner space provided between the lower ...
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WO/2021/114556A1 |
The present invention relates to a bulk acoustic wave resonator and a manufacturing method therefor. The resonator comprises: a substrate; a bottom electrode; a top electrode; and a piezoelectric layer provided between the bottom electro...
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WO/2021/117581A1 |
The present invention prevents occurrence of polarization reversal. In this elastic wave device (1), a plurality of first electrode fingers (61) and a plurality of second electrode fingers (62) are disposed on a piezoelectric layer (5). ...
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WO/2021/114140A1 |
Disclosed are a packaging method for a filter chip (300), and a packaging structure. The packaging method comprises: providing a circuit substrate (100); covering a first surface of the circuit substrate (100) and/or the filter chip (300...
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WO/2021/114970A1 |
A film bulk acoustic resonator structure manufacturing method is provided, comprising: determining a connection mode for film bulk acoustic resonators to be formed; etching a substrate (100) to form recesses (101), and filling the recess...
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WO/2021/114555A1 |
The present invention relates to a bulk acoustic wave resonator, comprising: a base; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein:...
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WO/2021/109426A1 |
The present invention relates to a single crystal thin film bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode connected with the bottom electrode pins; a top electrode connected with the top el...
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WO/2021/109443A1 |
Disclosed are a chip packaging module and a packaging method thereof, and an electronic device with the chip packaging module. The chip packaging module comprises: a chip (15); a package substrate (10), which faces the chip (15), a cavit...
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WO/2021/112214A1 |
Provided is an acoustic wave device capable of sufficiently suppressing spurious even when a piezoelectric body having anisotropy is used. The acoustic wave device 1 is provided with: a piezoelectric body 2; a first electrode 3 provided ...
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WO/2021/109444A1 |
The present invention relates to a bulk acoustic resonator, which comprises: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer that is disposed between the bottom electrode and the top electr...
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WO/2021/109090A1 |
A manufacturing method for a resonator and the resonator. A manufacturing method (S10) for a resonator (100) comprises: a cavity (10) forming step (S11): providing a base layer material (1), forming the cavities (10) from the top surface...
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WO/2021/106572A1 |
[Problem] To provide a structure that suppresses spurious waves that cannot be suppressed by controlling the surface geometry of joining faces of a piezoelectric material substrate and a support substrate of a joined body. [Solution] A j...
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WO/2021/106573A1 |
[Problem] To provide a structure that suppresses spurious waves that cannot be suppressed by controlling the surface shapes of joining surfaces of a piezoelectric material substrate and a support substrate of a joined body. [Solution] A ...
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WO/2021/104505A1 |
A filter circuit (100) having good passive intermodulation performance, a duplexer (100a) comprising the filter circuit (100), and a communication apparatus (1). The filter circuit (100) comprises an input end (In) for receiving a radio ...
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WO/2021/102640A1 |
An acoustic wave device and a fabrication method therefor. The acoustic wave device comprises: a POI structure, comprising: a material layer that has a high acoustic velocity layer and a low acoustic velocity layer that alternate, wherei...
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WO/2021/102813A1 |
Provided are a film bulk acoustic resonator and a preparation method therefor, and a filter. The film bulk acoustic resonator comprises a substrate and a piezoelectric oscillation structure. The piezoelectric oscillation structure compri...
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WO/2021/103579A1 |
Disclosed are a thin film material surface acoustic wave device with a GS layered electrode, a preparation method therefor and the use thereof. The device sequentially comprises a substrate, a first layer of interdigital transducer, a si...
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WO/2021/106266A1 |
In a piezoelectric device (100), a cantilever portion (120) has a fixed edge portion (121) and a free edge portion (122). A plate-shaped portion (130) has an opposing edge portion (131), a supporting edge portion (132), a first side supp...
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WO/2021/108281A2 |
Energy confinement in acoustic wave devices. In some embodiments, a surface acoustic wave device can include a quartz substrate, a piezoelectric film formed from LiTaO3 or LiNbO3 and disposed over the quartz substrate, and an interdigita...
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WO/2021/106921A1 |
This crystal element 10 comprises: a vibration part 11; a holding part 13; an electrode part 14; and a recess 18 as a recess and/or a projection. The vibration part 11 has a pair of vibration part main surfaces 111, 112. The holding part...
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WO/2021/100506A1 |
This electronic component (100) comprises: a substrate (110); a functional element (120) formed on the substrate (110); a support body (140); a cover part (150); and a protective layer (160) that covers the cover part (150). The support ...
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WO/2021/100504A1 |
This electronic component (100) comprises: a substrate (110); a functional element (120) formed on the substrate; a first electrode (150); a support for an insulator (160); a cover part (190); a second electrode (170), and a projection (...
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WO/2021/098321A1 |
Disclosed in the present invention is a two-dimensional high-performance resonator, specifically being an ultrahigh-frequency resonator structure capable of improving an electromechanical coupling coefficient of the resonator. The resona...
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WO/2021/100611A1 |
Provided is a filter device capable of suppressing tertiary distortion due to interfering waves. A filter device 1 is provided with a first filter 2A and a second filter 2B commonly connected to a common terminal 3, the first filter 2A h...
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