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WO/2023/167316A1 |
This elastic wave device comprises: a support substrate; a piezoelectric layer provided on the support substrate; a functional electrode provided on the piezoelectric layer; a cavity portion which is provided inside the support substrate...
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WO/2023/167221A1 |
In the present invention, a composite substrate has a piezoelectric layer and a low-acoustic-velocity film. The low-acoustic-velocity film spreads along the bottom surface of the piezoelectric layer, and has a lower acoustic velocity tha...
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WO/2023/165786A1 |
A method of exchanging quantum information between a photon and a micro/nano scale resonant structure is provided. The method comprises providing the resonant structure (15) in an optical waveguide (10). The method further comprises pass...
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WO/2023/162597A1 |
A duplexer (10) comprises: a piezoelectric substrate (50) having an upper surface (52) and a lower surface (51); a function element (120) disposed on the lower surface (51); a flat plate electrode (160) disposed on the upper surface (52)...
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WO/2023/162594A1 |
In order to reduce the spurious emission from an acoustic wave device using lamb waves, in this acoustic wave device using lamb waves at least a portion of an electrode is embedded in a piezoelectric substance.
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WO/2023/162979A1 |
Provided is an elastic wave device capable of improving a Q value and adjusting a frequency at which unnecessary waves are generated. An acoustic wave device 1 comprises: a piezoelectric substrate 2; and an IDT electrode 3 provided on ...
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WO/2023/162301A1 |
A resonator (10) equipped with a vibration part (120) configured to vibrate as the main vibration in a predetermined vibration mode, and formed on a silicon substrate (270) containing phosphorus (P), the silicon substrate (270) having a ...
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WO/2023/162566A1 |
The present invention is provided with: a piezoelectric body (10) that has a main surface (Sf1); a functional element (50) that is formed on the main surface (Sf1), and is included in an elastic wave device (110); a support layer (45) th...
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WO/2023/160905A1 |
An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structur...
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WO/2023/157958A1 |
The present invention suppresses cracking of a piezoelectric layer. This elastic wave device comprises: an elastic wave element comprising a piezoelectric layer that is thick in a first direction and has a first main surface and a second...
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WO/2023/157504A1 |
A crystal oscillator (100) has a frequency adjustment metal film (36) comprising a metal underlayer (36a) and a metal layer (36b) formed on the first main surface (301) of a second sealing member (30). In frequency adjustment of the crys...
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WO/2023/158714A1 |
A carrier aggregation circuit that includes a primary signal path for processing a first frequency band, the first frequency band being a TDD frequency band, and a secondary signal path for processing a second frequency band. The primary...
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WO/2023/159091A1 |
A filter device is provided that includes a substrate and a piezoelectric plate attached to the substrate. A conductor pattern (638a, 638b, 738a, 738b) is formed at a first surface of the piezoelectric plate and includes interdigital tra...
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WO/2023/155131A1 |
Provided in the embodiments of the present application are a bulk acoustic wave resonator, an acoustic filter and an electronic device. The present application relates to the technical field of semiconductors, and can improve the perform...
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WO/2023/156107A1 |
An apparatus is disclosed for a surface-acoustic-wave filter with an electrical conductor having a floating potential. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrod...
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WO/2023/155130A1 |
Provided in the embodiments of the present application are a surface acoustic wave resonator, an acoustic filter and an electronic device, relating to the technical field of semiconductors. The present application can improve the perform...
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WO/2023/157798A1 |
Provided is an elastic wave device capable of suppressing development of peeling of a piezoelectric layer and suppressing deterioration in electrical characteristics. An elastic wave device 1 is provided with: a support substrate 3; a ...
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WO/2023/151907A1 |
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing a SAW resonator (800) with a resonance frequency located at the upper stopband edge. One aspect is an apparatus includin...
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WO/2023/153272A1 |
Provided is an acoustic wave device in which a contact between a wire on a mounting substrate and a wire on a piezoelectric substrate can be suppressed, and degradation of electrical characteristics can be suppressed. An acoustic wave ...
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WO/2023/149471A1 |
The present invention improves the steepness of the attenuation characteristics of an acoustic wave filter. This acoustic wave filter comprises: a plurality of series resonators; and a plurality of parallel resonators including a first p...
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WO/2023/149119A1 |
A high frequency circuit (1) comprises: filters (11 and 12) that use a band A for TDD as a pass band; a filter (20) that uses at least a portion of a band B as a pass band; and a switch circuit (30) that can simultaneously execute the co...
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WO/2023/150436A1 |
A stacked AW filter package (200) includes a first substrate (204) stacked on a second substrate. The first substrate has a first AW filter circuit (202) on first surface (212) and a metal layer (210) on a second surface. The second subs...
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WO/2023/147724A1 |
Disclosed in the present application are a band-pass filtering circuit and a multiplexer. The band-pass filtering circuit comprises an electromagnetic LC filtering circuit and at least two acoustic resonance units, wherein each of at lea...
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WO/2023/142483A1 |
The present disclosure relates to the field of resonators. Disclosed are an interdigital transducer structure, a resonator, a manufacturing method for a resonator, and a filter. The interdigital transducer structure comprises a first bus...
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WO/2023/145878A1 |
This elastic wave device comprises an element base board, a piezoelectric layer, a funtional electrode provided for the piezoelectric layer, and a mounting base board. The element base board has a hollow portion positioned so as to at le...
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WO/2023/143005A1 |
Provided in the present invention are a high-bandwidth silicon back face etching type film bulk acoustic resonator, and a preparation method therefor. The bulk acoustic resonator sequentially comprises a substrate, a dense oxide film, a ...
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WO/2023/145626A1 |
This piezoelectric body has a first part, a second part and a third part. In a plan view, at least a portion of the second part is located on one side of a first direction relative to the first part. At least a portion of the third part ...
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WO/2023/145483A1 |
In the present invention, a bonding pad for wire bonding is formed on the outer surface of a first sealing plate of a piezoelectric oscillator having the first sealing plate and a second sealing plate, which are joined to the two main su...
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WO/2023/140270A1 |
A method for manufacturing an elastic wave element according to the present disclosure is for manufacturing an elastic wave element that includes a support substrate, a piezoelectric layer provided on the support substrate, and a functio...
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WO/2023/140070A1 |
Provided is a method for adjusting the frequency of a quartz oscillator (100), wherein: a metal film (36) for frequency adjustment that comprises a base metal layer (36a) and a metal layer (36b) layered thereon is formed on a first princ...
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WO/2023/140362A1 |
This acoustic wave device comprises: a support substrate including a support member and an intermediate layer provided on the support member; a piezoelectric body layer provided on the intermediate layer; and a function electrode provide...
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WO/2023/139839A1 |
A piezoelectric device (101) comprises: a base part (10) having an opening (9); and a vibration layer (12) disposed on the upper side of the base part (10). The vibration layer (12) has a fixation part (41) fixed to the base part (10) an...
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WO/2023/139979A1 |
The present invention improves the heat dissipation and shielding properties of a high-frequency module. A high-frequency module (100) has an electronic component (1) that has: a principal surface (11) that is on the opposite side from a...
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WO/2023/137769A1 |
The embodiments of the present application relate to the technical field of semiconductors. Provided are an acoustic filter and an electronic device by means of which the filtering performance of an acoustic filter can be improved. The a...
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WO/2023/140354A1 |
Provided is an elastic wave device that can inhibit unnecessary waves near the resonant frequency or near the anti-resonant frequency, even in a configuration in which a mass-addition film is provided to an edge region. This elastic wa...
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WO/2023/139819A1 |
This crystal resonator (1) comprises: a crystal substrate (10) having a first main surface (10A) and a second main surface (10B) facing the first main surface (10A); a first comb-like electrode (IDT1) provided on the first main surface (...
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WO/2023/140331A1 |
The present invention suppresses cracking in a piezoelectric layer. This elastic wave device comprises: a support member including a support substrate having a thickness in a first direction; a piezoelectric layer provided in the first d...
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WO/2023/140327A1 |
This elastic wave device comprises: a supporting board including a supporting member and a junction layer provided on the supporting member; a piezoelectric layer provided on the junction layer; a function electrode provided on the piezo...
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WO/2023/140272A1 |
In the present invention, an elastic wave device comprises a support substrate, a piezoelectric layer provided on the support substrate, a functional electrode provided on the piezoelectric layer, a cavity part, and at least one protrusi...
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WO/2023/135844A1 |
The invention provides a composite substrate having exceptional durability. This method for producing a composite substrate according to an embodiment of the present invention comprises: forming a first layer on a lower surface side of a...
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WO/2023/134962A1 |
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes...
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WO/2023/136293A1 |
Provided is an elastic wave device that can suppress unnecessary waves near the resonant frequency. This elastic wave device 10 comprises: a piezoelectric substrate having a support member including a support substrate, and a piezoelec...
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WO/2023/136156A1 |
This piezoelectric vibration device comprises: a piezoelectric vibrator including a piezoelectric vibration plate, and first and second sealing plates that hermetically seal a vibrating portion of the piezoelectric vibration plate; a bas...
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WO/2023/134252A1 |
The present invention relates to radio frequency filtering technology, and disclosed are a BAW filter structure and a preparation method. With respect to a stress problem in the prior causing industrial production to be unviable, the pre...
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WO/2023/136291A1 |
Provided is an elastic wave device in which the frequency at which an unwanted wave is generated can be distanced from an anti-resonance frequency. An elastic wave device 10 according to the present invention comprises: a piezoelectric...
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WO/2023/136294A1 |
Provided is an elastic wave device in which the frequency at which an unwanted wave is generated can be moved away from an anti-resonance frequency. An elastic wave device 10 according to the present invention is provided with: a piezo...
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WO/2023/136292A1 |
Provided is an elastic wave device that can suppress loss degradation without easily damaging the elastic wave device. An elastic wave device 10 according to the present invention comprises: a piezoelectric substrate 12 having a suppor...
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WO/2023/132354A1 |
A filter device having one or more elastic resonators, wherein the one or more elastic resonators each have a piezoelectric film that has piezoelectric properties, and an IDT electrode that has a plurality of electrode fingers and is pos...
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WO/2023/127884A1 |
The present invention comprises a piezoelectric body, two excitation electrodes overlapping the surface of the piezoelectric body, two extraction electrodes that are extracted from the two excitation electrodes, and a temperature-sensiti...
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WO/2023/127730A1 |
This piezoelectric device comprises a piezoelectric element, a mounting substrate, and a temperature sensitive element. The mounting substrate has a recess which is hermetically sealed. The piezoelectric element is mounted on a bottom su...
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