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WO/2024/014167A1 |
Provided is an elastic wave device in which delamination between an IDT electrode and a layer covering the IDT electrode is unlikely to occur. An elastic wave device 1 comprises: a support substrate 3; an intermediate layer 4 that is d...
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WO/2024/014204A1 |
Provided is an elastic wave device capable of lowering electrical resistance while increasing the power resistance of electrode fingers of an IDT electrode. An elastic wave device according to the present invention comprises: a piezoel...
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WO/2024/007404A1 |
A thin-film bulk acoustic resonator, comprising a substrate (1), an acoustic reflection structure (2) arranged on one side of the substrate (1), a bottom electrode (3) stacked on one side of the acoustic reflection structure (2), a piezo...
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WO/2024/009553A1 |
A resonance device (1) comprises: a resonator (10) which includes a vibration part (110), a holding part (140) that is placed on at least a part of the periphery of the vibration part (110), and a support arm (150) that connects the vibr...
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WO/2024/009555A1 |
A resonance device (1) comprises: a resonator (10) that has a vibrating part (110), a retention part (140) disposed at least in a portion of the surroundings of the vibrating part (110), and a supporting arm (150) that connects the vibra...
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WO/2024/009660A1 |
Provided is an elastic wave device that makes it possible to suppress unwanted waves and to suppress degradation of resonance characteristics. This elastic wave device comprises a piezoelectric substrate including a piezoelectric layer...
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WO/2023/202548A9 |
The present disclosure belongs to the technical field of bulk acoustic wave resonators. Provided are a bulk acoustic wave resonator, a method for preparing a bulk acoustic wave resonator, and an electronic device. The bulk acoustic wave ...
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WO/2024/002237A1 |
Embodiments of the present application relate to the technical field of resonators, and provide a surface acoustic wave resonator, a filter, and a communication device. The surface acoustic wave resonator can achieve a flat slowness curv...
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WO/2024/001087A1 |
Disclosed in the present invention are a preparation method for a film bulk acoustic resonator, and a film bulk acoustic resonator. The resonator comprises a silicon substrate, a bottom electrode layer, a piezoelectric layer and a top el...
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WO/2024/003001A1 |
The invention concerns a layer for an acoustic device, in particular for a micro acoustic radio frequency device. According to the invention, the layer has essentially a composition SiOxCyNz, wherein x, y and z > 0. Furthermore, the inve...
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WO/2024/004862A1 |
The present invention improves filter characteristics. A first resonator has an inclination angle θ1, and a second resonator has an inclination angle θ2. The inclination angle θ1 is greater than the inclination angle θ2.
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WO/2024/001352A1 |
Provided in the present disclosure are an acoustic wave device structure with a temperature compensation characteristic, and a filter and an electronic device. The acoustic wave device structure comprises a piezoelectric layer, a tempera...
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WO/2024/001757A1 |
The present invention relates to the technical field of microelectronics. Disclosed in the present invention are a high-frequency acoustic-wave resonator and a filter using same. The high-frequency acoustic-wave resonator comprises a sup...
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WO/2024/001872A1 |
Embodiments of the present application provide a surface acoustic wave filter, an apparatus, and an electronic device. The surface acoustic wave filter comprises a supporting substrate; a first acoustic velocity layer is arranged above t...
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WO/2024/004333A1 |
Provided is a composite substrate that can contribute to improving the performance of a SAW filter. A composite substrate according to an embodiment of the present invention has: a support substrate having an upper surface and a lower su...
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WO/2024/001157A1 |
The present application discloses an FBAR filter and a multi-ladder filter. The FBAR filter comprises a series resonator, a parallel resonator, a first inductor, and a second inductor; the series resonator and the parallel resonator are ...
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WO/2023/248530A1 |
An MEMS acoustic element (101) comprises: a first substrate (51) having a first through-hole (51e); a second substrate (52) that is disposed so as to block the first through-hole (51e) and at least partially overlap the first substrate (...
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WO/2023/248751A1 |
The present invention can ensure bonding strength between an electrode layer and an under bump metal. The present invention has a piezoelectric layer, an electrode layer positioned on an upper surface of the piezoelectric layer, an under...
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WO/2023/246385A1 |
The present application relates to the technical field of preparation of heterogeneous integrated devices, and provides a structure of an acoustic wave filter, comprising: parallel resonators and series resonators. The parallel resonator...
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WO/2023/250159A1 |
Devices (e.g., resonators) comprising a single-crystalline material, and related systems and methods, are generally described.
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WO/2023/248558A1 |
The present invention provides an elastic wave device that can suppress unnecessary waves and that can suppress thermal stress. An elastic wave device 10 comprises: a piezoelectric substrate 11 that includes a piezoelectric layer 4 hav...
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WO/2023/248824A1 |
In this duplexer according to the present invention, a first filter connects a common terminal and a first terminal, and corresponds to a first pass band. A second filter connects the common terminal and a second terminal, and correspond...
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WO/2023/248636A1 |
Provided is an acoustic wave device that can suppress Rayleigh mode spurious responses without excessively increasing a fractional bandwidth value. An elastic wave device 1 comprises a support substrate 3, a silicon oxide layer 4 that ...
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WO/2023/248823A1 |
This filter device has a multilayer substrate, a chip mounted on the multilayer substrate, a first filter of which at least a portion is included in the chip, and a first hybrid coupler connected to the first filter. A portion of the fir...
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WO/2023/246515A1 |
The present application relates to the technical field of the preparation of heterogeneous integrated devices. Provided are a structure of a longitudinal leaky surface acoustic wave resonator, and a filter. The structure of an acoustic w...
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WO/2023/248815A1 |
In the present invention, the frequency characteristics of an elastic wave filter are improved. This elastic wave filter has a first elastic wave resonator. The width of the frequency band of the first elastic wave resonator is represent...
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WO/2023/243351A1 |
The present invention reduces spurious emissions. Provided is an elastic wave device comprising: a support substrate with a cavity formed therein; a piezoelectric substrate located above the support substrate and covering the cavity; and...
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WO/2023/244165A1 |
An apparatus is disclosed for implementing a surface-acoustic-wave, SAW, filter with dielectric material (134) disposed in a piezoelectric layer (132). In an example aspect, the apparatus includes a surface-acoustic-wave filter with a pi...
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WO/2023/241786A1 |
A surface acoustic wave resonator element (1) comprising a first conductive element (2), a second conductive element (3), and an active area (4). First electrodes (7) extend from said first conductive element (2) across a first interface...
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WO/2023/241828A1 |
A SAW resonator element (1) comprises conductive elements (2, 3), an active area (4) being arranged between said conductive elements (2, 3) and separated from each conductive element (2, 3) by an interface area (5, 6). Electrodes (9, 10)...
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WO/2023/243919A1 |
An embodiment provides a full transmission device for wide-angle mode conversion of elastic waves, which can implement mode conversion of elastic waves with high energy efficiency in a wide incident angle range by using a single filter. ...
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WO/2023/243519A1 |
Provided is a multiplexer in which heat dissipation of a series-arm resonator is improved and degradation of power tolerance is less likely to occur. A multiplexer 10 of this invention comprises a transmission filter 1A and a reception...
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WO/2023/236332A1 |
An acoustic resonator device (1) comprising a substrate (2) and a piezoelectric layer (3), such as LN membrane, sandwiched between a floating potential bottom electrode (6) and pairs of top electrodes (7) to which RF voltage is applied, ...
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WO/2023/236153A1 |
Clock distribution in an integrated circuit component can comprise the generation of bulk acoustic waves by acoustic transmitters and propagation of the bulk acoustic waves across the substrate where they are received by piezoelectric el...
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WO/2023/237219A1 |
The invention relates to an acoustic resonator device (100) comprising: a piezoelectric layer (102); a dielectric substrate (104); and an interdigital transducer (106) which is arranged between the piezoelectric layer (102) and the diele...
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WO/2023/238768A1 |
An N-path filter (1) comprises N signal paths (P1-PN) that are connected in parallel between signal terminals (110 and 120), and N signal paths (P41-P4N). The signal path (PN) has a switch (1N) connected to the signal terminal (110), a s...
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WO/2023/239582A1 |
Advanced magnetic metamaterial networks for spatially-engineered magnetoinductive waves for signal transport in accordance with embodiments of the invention are disclosed. In one embodiment, a metamaterial network is provided, the metama...
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WO/2023/239293A1 |
An apparatus is disclosed for a surface-acoustic-wave filter that suppresses intermodulation distortion. In an example aspect, the apparatus includes a surface-acoustic-wave filter including an electrode structure (302) and at least one ...
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WO/2023/238473A1 |
Provided is an elastic wave device in which wiring resistance is reduced and stress applied thereto is generally reduced. An elastic wave device 1 comprises: a piezoelectric layer 4 that has a first main surface 4a and a second main su...
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WO/2023/234405A1 |
In this composite filter, an LC filter has one or more attenuation poles on the lower frequency side of a pass band. At least one of a plurality of acoustic wave resonators has an anti-resonance frequency located between one of the one o...
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WO/2023/235309A1 |
In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode embedded in a surface of the piezoelectric substrate to support a high-order mode of a surface acoustic wa...
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WO/2023/232562A1 |
The invention relates to a method for manufacturing an elastic wave device configured to operate at a frequency lower than 1 GHz, and formed on a POI substrate, the formation of the POI substrate comprising the following steps: - a) a st...
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WO/2023/231882A1 |
The present application provides a filter and an electronic device. The filter comprises a base layer; a piezoelectric layer located on one side of the base layer, wherein a third propagation speed of sound waves propagated on the base l...
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WO/2023/234383A1 |
In the present invention, the size of an elastic wave device is reduced. The elastic wave device includes: a support substrate; a piezoelectric body layer that directly, or indirectly, contacts the support substrate; and an IDT electrode...
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WO/2023/235645A1 |
An acoustic wave resonator has a first conductive layer (210), piezoelectrical material (212) formed over the first conductive layer, and second conductive layer (214) formed over the piezoelectric material. An alignment of the first con...
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WO/2023/234321A1 |
The present invention reduces fluctuations in frequency characteristics. The present invention comprises: a piezoelectric layer having a first main surface and a second main surface that face each other in a first direction; at least one...
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WO/2023/235311A1 |
In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode implemented on a surface of the piezoelectric substrate, such that the surface acoustic device supports a ...
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WO/2023/234144A1 |
Provided is an elastic wave device wherein the transverse mode can be stably suppressed. This elastic wave device 1 comprises a piezoelectric board 2 and an IDT electrode 3 provided on the piezoelectric board 2. The IDT electrode 3 has...
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WO/2023/233843A1 |
The present invention suppresses degradation in characteristics while achieving size reduction. In a high frequency module (100), a first chip (4) includes at least one of a plurality of first elastic wave resonators (14) of a first filt...
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WO/2023/228985A1 |
The present invention equalizes the frequency characteristics of adjacent resonators. This elastic wave device comprises a plurality of resonators. Each of the plurality of resonators comprises: a support member having thickness in a fir...
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