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WO/2024/063128A1 |
Provided is a laminate comprising: an adhesive sheet for catching an element distant from a holding substrate; and a release sheet laminated on one surface of the adhesive sheet. The adhesive sheet is provided with an adhesive layer. The...
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WO/2024/062741A1 |
Provided is a method for modeling a wafer shape by means of a function. The function calculates a displacement z of a wafer in the thickness direction thereof, and is the sum of a plurality of functions including: a first function g(r) t...
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WO/2024/062762A1 |
A substrate processing apparatus 1 comprises a transfer block 5, a processing block 7, and a buffer unit 33. The transfer block 5 comprises a bulk transport mechanism HTR for storing a substrate W into a carrier C, and a first attitude t...
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WO/2024/063049A1 |
Provided is a substrate processing device that makes it possible to synchronize a plurality of clamp pins to stably position a substrate at a center of rotation. A substrate processing device 1 according to an embodiment of the present i...
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WO/2024/064049A1 |
An actuator assembly to actuate a plasma tuning ring in a processing chamber includes an actuator, a rod, bellows, and vacuum seals. The actuator is arranged external to the processing chamber. The processing chamber is under vacuum. The...
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WO/2024/062974A1 |
This remover composition for light irradiation removal contains a solvent and at least either a polymer or a compound that has a structure represented by formula (1) and a carbon content of 80% or less. (In formula (1), each of R1 and R2...
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WO/2024/062923A1 |
The present invention addresses the problem of providing a film that has excellent adhesion for bonding members, even at an extremely low temperature of about -50°C, and has high cold/heat cycle reliability. The invention relates to a...
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WO/2024/062305A1 |
Semiconductor devices and methods of making the same include a first lower device and a second lower device on a substrate. A first upper device is over the first lower device and a second upper device is over the second lower device. A ...
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WO/2024/060476A1 |
The present invention relates to the technical field of chip fixtures. Disclosed is a chip mounting fixture, comprising: a fixture body, wherein the fixture body is provided with chip slots which are uniformly distributed in an array and...
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WO/2024/064567A2 |
In an aspect, a transistor comprises a gate structure having a metal gate, a dielectric layer at least partially surrounding the metal gate, a metal cap over a portion of the metal gate that is not surrounded by the dielectric layer, and...
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WO/2024/063652A1 |
A thermal processing device (1) is disclosed herein for thermally processing material (MTR) on a substrate (STR). The thermal processing device comprises a support plate (10) which at a first main side (11) is provided with a layer stack...
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WO/2024/063479A1 |
The present invention relates to: an epitaxial die having a structure enabling easy detection of electrical defects in an epitaxial die before an upper wiring process and easy replacement of a defective epitaxial die; a semiconductor lig...
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WO/2024/063588A1 |
The present invention relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device, according to an embodiment, may comprise the steps of: forming a thin film structure on a substrate;...
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WO/2024/063744A2 |
The present invention relates to a method (100) for enabling the use of an liquid-air interface in order to create the colloidal quantum well film desired to be created on a substrate surface.
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WO/2024/062877A1 |
The present invention addresses the problem of providing a chemical liquid which exhibits excellent removability of SiGe, while being suppressed in surface roughening of Ge if applied to an object to be processed containing Ge and SiGe. ...
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WO/2024/062703A1 |
Provided are a substrate processing method and a substrate processing apparatus that make it possible to selectively remove, in a satisfactory manner, a self-assembled monolayer that is provided to the surface of a substrate. The present...
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WO/2024/063873A1 |
Apparatus and methods for lifting a substrate from a substrate support include i. moving the substrate support and the substrate from a first position in a first direction toward lift pins, the substrate support having through holes each...
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WO/2024/060423A1 |
A surface modification method and device for a CIGS solar cell. The method comprises: starting a microwave power source (131) to ionize an inert gas in a microwave plasma generation chamber (132) so as to generate microwave plasma, bring...
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WO/2024/059012A1 |
A composite nanocrystalline silicon layer can be formed by depositing a polycrystalline silicon sublayer directly or indirectly on a substrate. An amorphous silicon sublayer is deposited on the polycrystalline silicon sublayer. The compo...
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WO/2024/055389A1 |
The present disclosure relates to a semiconductor structure/gate structure preparation method, a semiconductor structure, and a gate structure. The method comprises: providing a substrate; forming a first conductive layer having a first ...
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WO/2024/058943A1 |
In certain embodiments, a method includes depositing a photoresist layer over a semiconductor wafer to be patterned by photolithography, the photoresist layer having a first height, and exposing the photoresist layer to a pattern of acti...
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WO/2024/058678A1 |
The invention is related to a method of manufacture of van der Waals heterostructures based on transition metal dichalcogenides selectively grown by the chemical vapor deposition on a graphene substrate, wherein the surface of the graphe...
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WO/2024/057973A1 |
The present invention provides an electrostatic chuck and a substrate processing device which suppress residual adhesion of a substrate. Provided is an electrostatic chuck comprising a dielectric body and an electrode provided inside the...
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WO/2024/057588A1 |
Provided is a technology by which the maintenance period of a member provided in an exhaust system can be extended. The present invention is provided with: a treatment chamber for treating a substrate; an exhaust pipe that exhausts an ...
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WO/2024/056193A1 |
A method for manufacturing a SiC semiconductor element (10), comprising the steps of providing a SiC substrate (20) with a SiC epitaxial layer (30) on top, treating the SiC epitaxial layer (30) with plasma immersion ion implantation (PII...
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WO/2024/055348A1 |
Provided in the embodiments of the present application is a conveying device for wafer cassettes. The conveying device comprises a rack and a conveying mechanism, wherein the conveying mechanism comprises two conveying units, which are a...
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WO/2024/059751A2 |
Systems and methods are described herein for manufacturing high-index, low-absorption materials for use in visible light optical metasurfaces. Methods of manufacturing or forming hydrogenated amorphous silicon (a-Si:H), silicon-rich nitr...
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WO/2024/055885A1 |
Provided in the present application are a semiconductor device and a preparation method therefor, which realize ohmic contact between a first electrode layer and an epitaxial layer, reduce the contact resistivity of ohmic contact, are co...
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WO/2024/057528A1 |
According to an embodiment of the present invention, a semiconductor device comprises a first cell including a first PMOS transistor, a second PMOS transistor arranged side by side with the first PMOS transistor, a first NMOS transistor,...
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WO/2024/059450A1 |
Disclosed are integrated circuit structures with buried rails and backside metals for routing input signals to and/or output signals from one or more cells of the integrated circuit structures. Port landing-free connections to input port...
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WO/2024/058355A1 |
The present invention relates to: a semiconductor device having, as a gate dielectric layer, an amorphous fluorinated carbon thin film that has a high dielectric constant, low leakage current, and high insulation strength and is thus use...
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WO/2024/057780A1 |
This laser processing device comprises a support unit for supporting a target object, a light source for emitting laser light, a spatial optical modulator for modulating the laser light by displaying a modulation pattern, a condensing un...
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WO/2024/059234A1 |
Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a hol...
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WO/2024/059467A1 |
START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORM ETCH GAS INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER STOP
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WO/2024/058824A1 |
A processing system includes one or more processing chambers, and a system controller configured to cause the processing system to perform (a) a pre-clean process on exposed surfaces of a semiconductor structure, the semiconductor struct...
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WO/2024/058370A1 |
Disclosed are a nitride substrate having a low dislocation density, and a method for manufacturing same. According to one aspect of the present embodiment, provided is a method for manufacturing a substrate, the method being characterize...
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WO/2024/057792A1 |
This film-like adhesive agent is formed of a resin composition having thermosetting properties and containing a filler, and has a single-layer structure including a first surface and a second surface. The film-like adhesive agent has a r...
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WO/2024/057887A1 |
Provided is a mounting device that acquires position information about a substrate recognition mark and achieves highly accurate mounting, even when a chip component covers the substrate recognition mark in facedown mounting. Specificall...
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WO/2024/058356A1 |
The present invention relates to: a capacitor comprising, as a dielectric film, a thin film of amorphous fluorinated carbon that has a high dielectric constant and a low leakage current and provides a high level of insulation; a manufact...
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WO/2024/057722A1 |
The present invention provides an impurity diffusion composition which contains (A) a polyvinyl alcohol that has a saponification degree of not less than 30% by mole but less than 70% by mole, (B) an impurity diffusion component and (C) ...
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WO/2024/058881A1 |
A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the othe...
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WO/2024/058180A1 |
The present invention relates to a substrate (1) which is for forming a semiconductor device, and has: a diamond substrate (10); and a silicon carbide layer (20) disposed on a portion or the entirety of one surface (10a) of the diamond s...
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WO/2024/057889A1 |
Provided are: a wavelength measurement device which is capable of contributing to efficient measurement by shortening measurement time when measuring a representative wavelength of each light-emitting element chip by causing a plurality ...
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WO/2024/057165A1 |
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device has a plurality of memory cells, a first insulator, and a second insulator disposed on the first insulator. Each of the memory cells has...
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WO/2024/058431A1 |
The present invention relates to: a precursor for forming an yttrium- or scandium-containing thin film, the precursor characterized by including a compound represented by chemical formula 1; a method for forming an yttrium- or scandium-c...
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WO/2024/056127A1 |
The invention relates to a system for handling workpieces A or an arrangement formed of multiple systems of this type. The system according to the invention for handling workpieces A comprises a housing, delimiting a handling chamber B, ...
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WO/2024/055756A1 |
A wafer centering adjustment method, comprising: before a wafer (4) is etched, a wafer centering system (1) confirms whether the circle center of the wafer (4) coincides with the center of a first adsorption platform (3), and if not, the...
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WO/2024/058140A1 |
This semiconductor device is provided with: a semiconductor substrate (10) which has a main surface (10a); a drift layer (31) of a first conductivity type, the drift layer being formed in a main surface (10a)-side surficial part; a drain...
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WO/2024/058025A1 |
The present invention provides: a method for cleaning a semiconductor substrate, by which it is possible to remove (clean), in a shorter time and more cleanly by a simple operation, an adhesive layer that is obtained using, for example, ...
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WO/2024/057698A1 |
The present invention is a single crystal silicon substrate equipped with a nitride semiconductor layer, said substrate including: a single crystal silicon substrate; a 3C-SiC single crystal film that has been epitaxially grown on the si...
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