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WO/2004/025659A1 |
The memory device has constituent cells (604) which include a structural phase-change material to store the cell's data. This material may be, for instance, a chalcogenide alloy. A first pulse (204) is applied to the cell (604) to leave ...
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WO/2004/017436A2 |
The invention relates to a non-volatile memory element and production methods thereof and storage element arrangement, whereby a first electrode (1) used to reduce a formation voltage comprises a field amplifier structure (4) used for am...
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WO/2004/017437A1 |
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric (210) exposing a contact (170) formed on a substrat...
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WO/2004/017438A1 |
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an adhesive (215), like Ti or polysilicon, is formed on a dielectric (210) and on an electrod...
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WO/2004/008535A1 |
A nonvolatile memory comprising first and second electrodes (11, 12) and a phase-change recording body (14) interposed between the first and second electrodes (11, 12) and having a resistance variable when an electric pulse is applied be...
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WO/2003/102756A2 |
Discussed are computational circuits that include a matrix of computing elements, wherein the computing elements are at a length scale of nanometers. The computational circuits comprise charge-density-wave compounds for performing comput...
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WO/2003/096177A1 |
Non-binary computing methods utilize a digital multistage phase change material. Addition, subtraction, multiplication, and division are accomplished with the controlled application of energy to a phase change material. Energy in an amou...
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WO/2003/094227A1 |
A solid electrolyte switching device (10, 10’, 20, 20’) comprises a first interconnection layer (13) provided on a substrate (11) covered with an insulating layer, an ion supply layer (17) provided on the first interconnection layer ...
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WO/2003/088250A2 |
Programmable conductor memory cells in a stud configuration are fabricated in an integrated circuit by blanket deposition of layers. The layers include a bottom electrode in contact with a conductive region in a semiconductor substrate, ...
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WO/2003/085675A2 |
A phase-change memory device has a plurality of first wiring lines WL extending in parallel to each other, a plurality of second wiring lines BL which are disposed to cross the first wiring lines WL while being separated or isolated ther...
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WO/2003/085740A1 |
A non-volatile memory includes an insulation substrate (11) having a first electrode (18) thrusting through the front and rear surfaces, a second electrode (13) formed on one surface of the insulation substrate (11), and a recording laye...
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WO/2003/079443A2 |
The present invention is related to methods and apparatus to produce a memory cell (400) or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell (400) according to an emb...
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WO/2003/079463A2 |
A microelectric programmable structure (100) suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion con...
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WO/2003/073428A1 |
A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a first layer of a metal−doped chalcogenid...
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WO/2003/071614A2 |
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory ele...
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WO/2003/071531A1 |
A sputtering target for a phase change memory characterized in that the target is composed of three or more elements, the main component is one or more selected from antimony, tellurium, and selenium, and the variation of the composition...
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WO/2003/067633A2 |
A programmable resistance memory element using a conductive sidewall layer (134) as the bottom electrode. The programmable resistance memory material (210) deposited over the top edge of the bottom electrode, in a slot-like opening of a ...
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WO/2003/065456A2 |
A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over the substrate and including the patterned ...
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WO/2003/054887A1 |
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a...
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WO/2003/052815A2 |
An electrode structure (200A) includes a first layer of conductive material (202) and a dielectric layer (204) formed on a surface of the first layer. An opening (206) is formed in the dielectric layer to expose a portion of the surface ...
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WO/2003/050872A1 |
A nonvolatile memory (1) comprising an insulation substrate (11) having first electrodes (15) penetrating through front and back faces, second electrodes (12) formed on one face of the insulation substrate (11), and recording layers (14)...
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WO/2003/044878A2 |
The present invention provides a polymer material having a carrier transport property. The polymer material has first and second states in which degrees of the carrier transport property are different from each other, microscopic structu...
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WO/2003/044802A2 |
A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding...
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WO/2003/038831A1 |
A phase-change memory cell (10) may be formed with a carbon-containing interfacial layer (20) that heats a phase-change material (24). By forming the phase-change material (24) in contact, in one embodiment, with the carbon containing in...
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WO/2003/036735A2 |
Programmable surface control devices whose physical features, such as surface charcteristics and mass distribution, are controlled by the presence or absence of an electrodeposition (40) of metal and/or metal ions from a solid solution u...
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WO/2003/036736A2 |
Mass distribution within programmable surface control devices is controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable electric field. One such progr...
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WO/2003/032392A2 |
A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. ...
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WO/2003/028124A1 |
A switch comprising a transistor for selecting a storage cell and a solid electrolyte. In a storage cell, a metal is formed over a drain diffusion layer of a field−effect transistor fabricated on the surface of a semiconductor substrat...
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WO/2003/023875A2 |
A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, ...
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WO/2003/021692A2 |
A phase-change memory (10) may be formed with at least two phase-change material layers (22, 26) separated by a barrier layer (24). The use of more than one phase-change layer (22, 26) enables a reduction in the programming volume while ...
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WO/2003/021693A2 |
An elevated phase-change memory cell (10) facilitates manufacture of phase-change memories by physically separating the fabrication of the phase-change memory components from the rest of the semiconductor substrate (12). In one embodimen...
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WO/2003/020998A2 |
Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contain...
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WO/2003/019691A2 |
A first conductive electrode material (16) is formed on a substrate (12). Chalcogenide comprising material (22) is formed thereover. The chalcogenide material comprises AxSey, A preferable being Ge and Si. A silver comprising layer (24) ...
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WO/2003/017282A1 |
The invention relates to computer engineering and can be used for various computer memory devices and for developing video-audio apparatus of new generation, systems of associative memories and synapses (an element of a electric line pro...
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WO/2003/009302A1 |
A semiconductor memory device including different types of memories capable of reducing the size (thickness) and increasing the speed. The semiconductor memory device includes a first memory having bit lines, word lines intersecting the ...
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WO/2002/103436A2 |
A novel thin planar latching switch device, generally based on a layer of polymeric switching materials sandwiched between two electrical planar conductors operative as electrodes. The device behaves as a bi-stable switch. Furthermore, t...
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WO/2002/097863A2 |
A first and second oxide layers and a conductive layer are deposited on a substrate with a via formedwithin the first oxide layer. The conductive layer and the second oxide layer are then removed suchthat the remaining portion of the con...
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WO/2002/095920A1 |
The electron tunneling device (110) includes first and second non-insulating layers (112 and 114) spaced apart such that a given voltage can be provided therebetween. The device also includes an arrangement disposed between the non-insul...
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WO/2002/095832A2 |
A detector (10A) for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers (14), which layers are spaced a...
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WO/2002/091496A2 |
A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has reversibly programmable resistance. The material incl...
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WO/2002/084729A2 |
The aim of the invention is to provide a method for monitoring the chalcogenation process and, in doing so, to enable this process to be controlled and the determination of its end point. To this end, a method is used in which, during pr...
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WO/2002/037500A1 |
A bistable electrical device (50) employing a bistable body (52) and a high conductivity material (54). A sufficient amount of high conductivity material (54) is included in the bistable body (52) to impart bistable between a low resista...
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WO/2002/021542A1 |
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor (140) and a plurality of electrodes (160, 120). Electrical propert...
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WO/2002/021598A1 |
An electronic device comprising a first electrode made of a mixture conductor material having ion conductivity and electron conductivity and a second electrode made of a conductive material, in which a voltage is so applied between the f...
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WO2000063981A9 |
A metal-insulator-metal diode device (10) and method of manufacture are described. The device includes conductive layers (12, 16) and a metal-insulator layer (14) comprising particles of a refractory metal (20) having an instrinsic oxide...
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WO/2002/013284A2 |
A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between...
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WO/2002/009206A1 |
An electrically operated programmable resistance memory element. In one embodiment of the invention the memory element includes an electrical contact having at least a first region (R1) with a first resistivity and a second region (R2) w...
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WO2000048196A9 |
A microelectronic programmable structure (300) and methods of forming and programming the structure (300) are disclosed. The programmable structure (300) generally includes an ion conductor (340) and a plurality of electrodes (320, 330)....
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WO/2001/047042A1 |
A method for stabilizing a tunnel junction component, in which a mask is formed on the surface of a substrate, and conductors (3, 4) are constructed by evaporation onto the substrate in an evaporation chamber, and at least one thin oxide...
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WO2000015882A9 |
A method for switching properties of perovskite thin film materials, including the colossal magnetoresistive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials i...
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