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WO/2005/106955A1 |
Disclosed is a storage element using a material (variable resistance material) whose resistance changes according to the electrical pulse applied thereto. The storage element comprises a transistor (T1) which is formed on a semiconductor...
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WO/2005/101420A1 |
A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin fil...
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WO/2005/101539A1 |
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to the invention, a resistance variable memory element is provided...
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WO/2005/098958A1 |
The invention relates to a method for producing a PCM memory element and to a corresponding PCM element. The method of production comprises the following steps: providing a first and a second line device (Ma, Mb) underneath an insulating...
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WO/2005/096380A1 |
The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the invention includes a phase change memory ...
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WO/2005/093839A2 |
The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second ele...
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WO/2005/083810A2 |
A microelectronic programmable structure (102, 104, 202, 204) suitable for storing information and methods of forming and programming the structure are disclosed. The programmable structure generally includes a metal oxide ion conductor ...
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WO/2005/081256A1 |
A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element has a plurality of multiple-layer struc...
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WO/2005/076280A1 |
To improve recording/holing reliability in the case of operating a phase change memory at a low voltage and at a high temperature, or leaving it as it is. A high-speed operation is performed with a read voltage above set and reset voltag...
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WO/2005/076355A1 |
A phase-change storage composed of memory cells each comprising a memory element and a select transistor. The heat resistance is enhanced, so that the storage can operate above 145°C. The recording layer is such that the contents of Zn ...
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WO/2005/072090A2 |
A multi-terminal logic device. The device includes a phase change material having crystalline and amorphous states in electrical communication with three or more electrical terminals. The phase change material is able to undergo reversib...
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WO/2005/066969A1 |
A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the...
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WO/2005/053047A1 |
The invention relates to an integrated semiconductor memory (1) comprising a storage medium (6) that is located between two electrodes (10, 20) and that takes the form, for example, of a phase change medium. The storage medium (6) can ad...
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WO/2005/045847A1 |
The invention relates to a phase change memory element comprising, between two electric contacts (1, 2), a part (3) which is made of a memory material, presenting an amorphous to crystal phase change and vice-versa and is embodied in the...
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WO/2005/045935A2 |
Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing vari...
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WO/2005/041196A1 |
The current flow restriction used to switch a phase change memory (PC-RAM) poses a significant problem in known phase change memories. The construction of said memories is based on a vertical current conduction that is perpendicular to t...
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WO/2005/041303A1 |
There is provided a resistance change element which can lower the drive voltage of an RRAM expected to be a high-speed memory having a low power consumption and suppress irregularities of the electric pulse width for realizing the same r...
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WO/2005/034244A2 |
A current-controlling device comprising a first conductor (14), a second conductor (16), and a tunneling barrier (18) comprising a first insulating layer between the first conductor and the second conductor. The tunneling barrier electri...
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WO2004100217B1 |
Multi-terminal field devices comprising a chalcogenide material. The devices include a first terminal, a second terminal and a field effect terminal. Application of a gate signal to the field effect terminal modulates the current passing...
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WO/2005/029585A1 |
[PROBLEMS] To provide a phase-change film for semiconductor non-volatile memories and a sputtering target for forming such a phase-change film. [MEANS FOR SOLVING PROBLEMS] Disclosed is a phase-change film for semiconductor non-volatile ...
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WO/2005/027134A2 |
Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region (210) containing a chalcogenide material along with three or more ...
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WO/2005/024839A1 |
The invention relates to a storage location (1) having an ionic conduction storage mechanism and to a method for the production thereof. The central idea of the inventive storage location (1) and of the inventive production method consis...
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WO/2005/017906A1 |
A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, ...
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WO/2005/011011A1 |
The present invention provides an improved method for forming a memory element having a chalcogenide layer such as Ge2Sb2Te5. A substrate having a dielectric etch stop layer, a chacolgenide layer, an anti-reflective layer and a mask laye...
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WO/2005/008783A1 |
A switching element comprises an ion conductor for conducting metal ions used in electrochemical reaction, a first electrode and a second electrode provided apart from each other by a specified distance while in contact with the ion cond...
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WO/2005/008643A2 |
A re-recordable data storage medium (100) is disclosed. The medium in one embodiment includes a phase-changeable layer (106) and an intermediate layer (104). A junction between the intermediate layer and another layer of the medium provi...
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WO/2005/008723A2 |
A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is ...
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WO/2004/107466A1 |
An electric switch comprising a ferroelectric substrate to which a metal is added, a pair of electrodes provided to the ferroelectric substrate and an electric field applying portion for changing the direction of the polarization of a pa...
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WO/2004/100266A1 |
A non-volatile memory comprising a first substrate (100) and a second substrate (110) is disclosed. The first substrate (100) comprises a plurality of switching devices (4) arranged as a matrix and a plurality of first electrodes (18) el...
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WO/2004/096567A1 |
A phase-change recording material enabling high-speed recording/erasure, excellent in recording signal characteristics, high in recorded signal storage stability, small in variation in reflectivity to the recorded signal even after long-...
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WO/2004/085168A1 |
A phase variation recording material capable of high-rate recording/erasure, having excellent recording characteristics, and exhibiting high preservation stability of recording signal and excellent durability against repeated recording, ...
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WO/2004/086459A2 |
A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
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WO/2004/085167A1 |
An information recording medium comprising a recording layer wherein a reversible phase change between the crystalline phase and the amorphous phase is caused by an optical means or an electric means is characterized in that the recordin...
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WO/2004/084306A1 |
A memory element in/from which information can be easily recorded/read and which is produced by a relatively simple manufacturing method and a storage device using this are disclosed. A memory element (10) comprises a first electrode (2)...
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WO/2004/081977A2 |
Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a ...
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WO/2004/081944A1 |
The invention relates to a non-volatile, integrated memory cell (4) comprising a word line (20), a bit line (10) which crosses the word line (20) and is arranged on a point of intersection above or below the word line, and a layer (40) c...
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WO/2004/066386A1 |
An electron device comprises an alloy memory core made of an electron conductor and electrodes provided to both ends of the electron conductor. By applying a current, the alloy composition is made uneven to write data. The memory core is...
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WO2004032147B1 |
The invention relates to a resistive storage element containing a dielectric as the storage medium, in which isolated nanoparticles are arranged. The dielectric is preferably configured from an organic polymer. The storage element exhibi...
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WO/2004/057684A1 |
The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whe...
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WO/2004/057618A2 |
The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change m...
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WO/2004/057676A2 |
The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the ph...
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WO/2004/055827A1 |
Briefly, in accordance with an embodiment of the invention, a method and system to program a memory material is provided. The method may include applying three signals having different durations and different amplitudes to a memory mater...
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WO/2004/055825A1 |
Phase change memories (10) may exhibit improved properties and lower cost in some cases by forming the phase change material layers (14) in a planar configuration. A heater (16) may be provided below the phase change material layers (44)...
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WO/2004/055915A2 |
A vertical elevated pore structure for a phase change memory (10) may include a pore (46) with a lower electrode (24, 26) beneath the pore contacting the phase change material (18) in the pore (46). The lower electrode may be made up of ...
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WO/2004/055916A2 |
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode (180), an adhesive material (220), an insul...
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WO/2004/051763A2 |
The invention relates to a method for the production of a memory cell, a memory cell and a memory cell arrangement. According to the inventive method for the production of a memory cell, a first electrically conductive area (311) is form...
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WO/2004/049440A2 |
Disclosed are a semiconductor memory device (1) having a memory effect due to phase transformation and a method for the production thereof, according to which a hollow space arrangement (H) comprising at least one hollow space (H1, H2) t...
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WO/2004/034482A2 |
The electric device (1, 100) comprises a resistor (36, 250) comprising a phase change material which is able to be in a first phase and in a second phase. The resistor (36, 250) has an electrical resistance which has a first value when t...
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WO/2004/032256A1 |
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening (220) is formed through a dielectric (210) exposing a contact (170), the contact (...
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WO/2004/027877A1 |
A variable resistance functional body comprises a body (101) of a first substance interposed between first and second electrodes (111, 112) and particles (102) of a second substance so provided in the body (101) as to vary the electrical...
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