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WO/2009/020210A1 |
A fine switching element is provided with a first electrode (4), which includes an ion conductor, and a second electrode (5) composed of an electrical conductor. The switching element physically and electrically connects the first electr...
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WO/2009/020041A1 |
This invention provides a resistance variation-type memory device which can improve the capability of retaining the resistance value of a stored state and an erased state. A memory layer (5) comprising a high-resistance layer (2) and an ...
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WO/2009/008931A2 |
An inverted variable resistance memory cell and a method of fabricating the same. The memory cell is fabricated by forming an opening in an insulating layer deposited over a semiconductor substrate, etching the top portion of the opening...
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WO/2009/005614A2 |
A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read / write switching element.
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WO/2009/005699A1 |
A method of forming a memory cell is provided that includes (1) forming a first conductor (206) above a substrate; (2) forming a reversible resistance-switching element (202) above the first conductor using a selective growth process; (3...
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WO/2009/001261A1 |
An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different ...
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WO/2009/001262A1 |
An electric device has a resistor including a phase change material changeable between a first phase and a second phase within a switching zone. The resistor has a first resistance when the phase change material is in the first phase and...
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WO/2008/155251A1 |
The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer (3) located between first and second metallic layers (1, 4). The amorphous chalcogenide solid active electr...
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WO/2008/155724A1 |
An electronic component (100), a first electrode (101), a second electrode (102), and a convertible structure (103) electrically coupled between the first electrode (101) and the second electrode (102), being convertible between at least...
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WO/2008/153006A1 |
An information recording/reproducing device is provided with a recording layer, and a means for recording information by generating phase change in the recording layer by applying a voltage to the recoding layer. The recording layer cont...
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WO/2008/153099A1 |
This invention provides an information recording/reproducing device comprising a laminated structure having an electrode layer and a recording layer, a buffer layer added to the electrode layer, and a voltage application part for applyin...
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WO/2008/152908A1 |
To provide a neuron element and a neural network information processing apparatus using the same. The neuron element (1) comprises an input part (10) that receives a plurality of input signals (xi) to generate weighted signals (xiwi) obt...
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WO/2008/149605A1 |
Disclosed is a variable resistance element comprising a first electrode, a variable resistance material layer formed on the first electrode, and a second electrode formed on the variable resistance material layer. The variable resistance...
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WO/2008/149808A1 |
A switch circuit is provided with a plurality of switch elements. Each switch element has two metal layers and a resistance variable layer arranged between the metal layers by being brought into contact with the metal layers. The switch ...
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WO/2008/149484A1 |
A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (...
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WO/2008/146461A1 |
Disclosed is a nonvolatile semiconductor device comprising a first electrode (103), a second electrode (105) and a variable resistance layer (104) arranged between the first electrode (103) and the second electrode (105) and having a res...
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WO/2008/146243A2 |
An electronic device (100) comprises a substrate (101), a first electrode (102) formed at least partially on the substrate (101), a second electrode (103) formed at least partially on the substrate (101), a convertible structure (104) co...
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WO/2008/147595A1 |
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e...
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WO/2008/142919A1 |
Provided is a variable resistive element which performs high speed and low power consumption operation. In the variable resistive element, a metal oxide layer (10) is provided between a first electrode (11) and a second electrode (12), a...
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WO/2008/144173A1 |
A variable resistance memory element and method of forming the same is disclosed. The memory element includes a substrate supporting' a bottom electrode (145) having a small bottom contact area. A variable resistance material (121) is fo...
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WO/2008/142768A1 |
A semiconductor device equipped with a phase-change memory element having a memory layer constituted of the phase-change material M (additional element)-Ge-Sb-Te (wherein M is at least one of In, Ga, Al, Zn, Cd, Pb, Si, V, Nb, Ta, Cr, Mo...
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WO/2008/132899A1 |
In order to use a resistance change element having an MIM laminate structure of metal/metal oxide/metal as a switch element, an off resistance larger than that required for a memory element by a factor of 1000 or more must be achieved. I...
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WO/2008/132701A1 |
A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a s...
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WO/2008/129477A2 |
An electronic device (100), comprises a first electrode (101), a second electrode (102) and a convertible structure (103) connected between the first electrode (101) and the second electrode (102), which convertible structure (103) is co...
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WO/2008/129480A2 |
An electronic component (100) comprising a matrix (102) and a plurality of islands (103) embedded in the matrix (102) and comprising a material which is convertible between at least two states characterized by different electrical proper...
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WO/2008/126366A1 |
Disclosed is a variable resistance element comprising a first electrode (2), a second electrode (4), and a variable resistance layer (3) which is arranged between the first electrode and the second electrode and electrically connected wi...
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WO/2008/126365A1 |
A nonvolatile memory device comprises a first electrode (111), a second electrode (112), and a variable resistance layer (113) which is interposed between the electrodes and the resistance value of which is reversibly changed between res...
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WO/2008/127866A1 |
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are co...
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WO/2008/123139A1 |
Disclosed is a resistance memory element which has a relatively high switching voltage and can achieve a relatively high change ratio in resistance. The resistance memory element comprises a base material (2) and opposite electrodes (3,4...
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WO/2008/123307A1 |
A nonvolatile information recorder/reproducer of low power consumption exhibiting high thermal stability. The information recorder/reproducer comprises a recording layer, and a means for recording information by applying a voltage to the...
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WO/2008/124328A2 |
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact bet...
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WO/2008/124444A1 |
Embodiments of the present invention, provide a method that includes providing a wafer including multiple cells, each cell including at least one emitter (108), and performing a lithographic operation on the wafer. The lithographic opera...
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WO/2008/120126A1 |
An electronic device (100) comprising a heat transfer structure (103) and a phase change structure (104) which is convertible between two phase states by heating, wherein the phase change structure (104) is electrically conductive in at ...
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WO/2008/117679A1 |
A variable resistance element is provided with a first electrically conductive unit, an insulating film pattern formed on the first electrically conductive unit, a step formed by the insulating film pattern against the upper surface of t...
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WO/2008/117455A1 |
A phase-change memory composed of a resistive element and an MIS transistor, wherein the resistive element has a storage layer consisting of a chalcogenide film whose average composition is represented by the general formula: InαGeXSbYT...
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WO/2008/117494A1 |
Storage elements (3) provided in a storage device (21) in matrices comprise resistance change elements (1) the electrical resistance values of which are changed by application of an electrical pulse having a positive or negative polarity...
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WO/2008/113734A1 |
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A compris...
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WO/2008/108822A2 |
An electrically actuated switch (100', 200') comprises a first electrode (102), a second electrode (104), and an active region (306) disposed therebetween. The active region comprises at least one primary active region (308, 308') compri...
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WO/2008/102718A1 |
Provided is a semiconductor memory device comprising a resistance-varying element including a first electrode, a current passage region disposed to contact the first electrode, and a second electrode disposed to contact the current passa...
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WO/2008/090963A1 |
This invention provides a method for forming a chalcogenide film within a contact hole formed in an insulating layer on a substrate. The method comprises the step of providing a target having the same composition as the chalcogenide film...
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WO/2008/090621A1 |
In the step of forming an InGeSbTe film by doping GeSbTe composed of germanium (Ge), antimony (Sb) and tellurium (Te) as a base material with indium (In), while maintaining the temperature of a semiconductor substrate at a temperature be...
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WO/2008/084545A1 |
This invention provides a phase change memory that can improve heat resistance during mounting through solder reflow treatment or during use in a high-temperature environment. The phase change memory comprises electrodes provided respect...
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WO/2008/081742A1 |
A resistance variable element (10), a resistance variable storage device and a resistance variable device are provided with a first electrode(2); a second electrode (4); and a resistance variable layer (3), which is arranged between the ...
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WO/2008/081741A1 |
A resistance variable element and a resistance variable storage device using such resistance variable element are provided with a first electrode; a second electrode; and a resistance variable layer (3), which is arranged between the fir...
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WO/2008/078197A2 |
The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the sub...
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WO/2008/068991A1 |
Provided is a nonvolatile semiconductor memory device capable of executing rewriting operations of different resistance changes individually and simultaneously for a plurality of memory cells having variable resistance elements changed i...
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WO/2008/068992A1 |
Provided is a nonvolatile semiconductor storage device, which is enabled to perform a stable, high-speed switching operation on variable resistance elements by applying a voltage of a positive or negative polarity with no difference in t...
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WO/2008/062623A1 |
Provided is an element structure by which operating voltage variance and a leak current in an off-state are reduced in a resistance variable type nonvolatile storage device. The nonvolatile storage device is characterized in having a lam...
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WO/2008/054572A1 |
In a method of providing an operating characteristic of a resistive memory device (38, 138), material of an electrode thereof is selected to in turn provide a selected operating characteristic of the device. The material of the electrode...
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WO/2008/047770A1 |
[PROBLEMS] To provide a resistance variable element which can perform bipolar operation in prescribed operating principles and can be used as a storage element. [MEANS FOR SOLVING PROBLEMS] A resistance variable element is provided with ...
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