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WO/2000/079539A1 |
A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second puls...
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WO/2000/070689A1 |
A magnetic tunnel junction device provided with a multilayer structure comprising a pair of electrode layers (1, 9) of a ferromagnetic material and an interposed tunnel barrier layer (5) of an insulating material. In order to realize a l...
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WO/2000/065669A1 |
A transistor operated by changing the electrostatic potential of an island (26) disposed between two tunnel junctions (34, 36). The transistor has an island (26) of material which has a band gap (e.g. semiconductor or superconductor mate...
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WO/2000/057498A1 |
A memory element comprising a volume of phase change memory material (250); and first and second contact for supplying an electrical signal to the memory material (250), wherein the first contact comprises a conductive sidewall spacer (1...
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WO/2000/054982A1 |
An information recording medium having such a recording material layer on a substrate where reversible phase transition between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The r...
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WO/2000/049659A1 |
The basic discovery underlying the present invention concerns a plurality of oxide substances, i.e., materials for use in microelectronic and in electronic circuits and particularly semiconductor chips which combine both a switching phen...
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WO/2000/041247A2 |
Quantum-size electronic devices comprise electrodes and at least one cluster seperated from the said electrodes by a tunnel-transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formula...
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WO/2000/041245A1 |
Quantum-size electronic devices comprise electrodes and at least one cluster separated from the said electrodes by a tunnelly transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formu...
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WO/1999/067798A2 |
Methods and apparatus for high voltage, high current, fast acting, high temperature, high repetition rate synthetic diamond electrical switch and an improved particle and radiation detector are disclosed. Energy absorbed from incident el...
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WO/1999/054128A1 |
An electrically operated, single cell memory element (30) comprising: a volume of memory material (36) defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielect...
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WO/1999/039394A1 |
The present invention relates generally to fabricating two-terminal electric microswitches comprising thin semiconductor films and using these microswitches to construct column-row (x-y) addressable microswitch matrices. These microswitc...
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WO/1999/028914A2 |
A programmable sub-surface aggregating metallization structure (100) includes an ion conductor (110) such as a chalcogenide glass which includes metal ions and at least two electrodes (120, 130) disposed at opposing surfaces of the ion c...
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WO/1999/021235A1 |
A semiconductor memory device using silicon-rich amorphous silicon alloy material memory elements that are electrically programmable by means of current induced conductivity comprises a layer (10) of the alloy material on opposing sides ...
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WO/1999/007027A1 |
A thin-film two-terminal element comprising a first metal film functioning as both a wiring layer and a first electrode, a first insulation film having nonlinear resistance characteristics and formed on the first electrode of the first m...
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WO/1998/058385A1 |
An electrically operated, directly overwritable memory element (42) comprising a volume of memory material (36) having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in...
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WO/1998/044498A1 |
The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with ...
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WO/1998/036446A2 |
An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure,...
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WO/1998/019350A1 |
A composite memory material (36) comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, ...
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WO/1998/014823A1 |
Thin-film switching elements (20, 21) of a display device or the like include a first electrode (22, 23) on a substrate (11) and a layer of switching material (24, 25) on the first electrode. These switching elements may be semiconductor...
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WO/1997/048032A2 |
A programmable metallization cell (10) ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (13 and 14) (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor (12...
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WO/1997/040499A1 |
An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element (36) with multibit storage capabilities and having at least one contact (6) for supplying electrical input signals to set the memory eleme...
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WO/1997/016766A1 |
An active matrix liquid crystal display panel (1) comprises a plurality of liquid crystal display elements (2) distributed in a matrix of rows and columns; means (10-11) for supplying video signals and display element selection signals, ...
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WO/1997/015954A1 |
The present invention is a computational unit comprising a logic processing device (10), and a memory array (30) deposited on top of and communicating with the logic processing device. More specifically, the present invention is a comput...
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WO/1997/007550A1 |
Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element (30) having an increased thermal stability of data retention achie...
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WO/1997/005665A1 |
An electrically operated memory element (30) includes a volume of memory material (36) characterized by: a large dynamic range of electrical resistance values; and the ability of at least a filamentary portion to be set, by the selected ...
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WO/1996/030953A1 |
A production method of nonlinear MIM device (50) including a Ta electrode layer (16), an anodized layer (18) and a Cr electrode layer (20). A tantalum oxide film (14) is first disposed on a transparent substrate (12), the Ta electrode la...
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WO/1996/023246A1 |
A process for preparing a nonlinear resistance element which comprises the steps of: forming a first conductive film composed of tantalum as a major component and tungsten as an additive on a substrate; anodizing the first conductive fil...
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WO/1996/019837A2 |
A semiconductor memory device comprises first and second conductive contact layers (12, 15) and a hydrogenated, silicon-rich, amorphous silicon alloy layer (14), particularly an amorphous silicon nitride or amorphous silicon carbide allo...
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WO/1996/016448A1 |
The invention relates to a tunnel-effect component consisting of at least two conductive regions (3a, 3b) formed on a substrate (1) by directional application process and an insulating region (2) arranged spatially between them and formi...
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WO/1996/014664A1 |
An insulated lattice is prepared with a plurality of lattice oriented atoms to create a substantially planar surface having a lattice arrangement. Any unsatisfied chemical bonds are terminated along the substantially planar surface by pl...
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WO/1996/012308A1 |
An active matrix liquid crystal display panel (1) including a plurality of liquid crystal display elements (2) distributed in a matrix of rows and columns for supplying video signals and display element selection signals, including row a...
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WO/1994/024707A1 |
The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material (36) which defines the single cell memory element, a pair of s...
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WO/1994/018600A1 |
This resistance element comprises a first conductive film, an insulating film and a second conductive film. The first conductive film is a metallic film formed by adding, to its principal metallic component such as tantalum, an element w...
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WO/1994/015370A1 |
This diode is used for a liquid crystal display of an active matrix type. The parasitic capacitance of the diode can be reduced, and a film with a large area and an even thickness can be formed, making it possible to fabricate a large li...
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WO/1994/010755A1 |
Described is an electronic component with N input terminals, which admit N input signals, M output terminals, each of which is assigned to one or more input terminals, a component body in which, depending on the input signals, current pa...
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WO/1993/004506A1 |
A solid state, directly overwritable, non volatile, high speed, multibit single cell memory characterized by numerous stable, non volatile detectable configurations of local atomic and/or electronic order, which can be selectively and re...
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WO/1993/002480A1 |
Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching device fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the ...
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WO/1991/015033A1 |
An electron device comprises a first dielectric layer (103) having a first thickness determined to allow the tunneling of carriers therethrough and a first dielectric constant, a second dielectric layer (104) provided in contact with the...
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WO/1990/013921A1 |
An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer and metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contac...
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WO/1990/000817A1 |
An electrical device comprises a body of a switching material (3, 13, 24) and a pair of electrodes (1, 4; 11, 14 et 15; 22, 23) that are located on the switching material with at least part of the switching material between them. The swi...
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WO/1986/000470A1 |
The method is intended to the fabrication of an electronic element comprising at least one connection input and one synthetic semi-conductor body consisting of a mixture of conducting particles in a synthetic mass. The conducting particl...
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WO/1979/000776A1 |
A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate (18, 25, 50, 65, 75, 88), a solid amorphous semiconductor film (51, 66, 76, 88), ...
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WO/1979/000724A1 |
A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film (65, 65', 65'', 65'''), preferably by vaporizing selicon (6) or the...
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JP2022554106A |
An electrochemical device includes an electrochemical cell and an electrical circuit. The electrochemical cell includes a first solid state component and a second solid state component. The two solid components contain the same chemical ...
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JP7197866B2 |
Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide hav...
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JP2022189332A |
To provide a storage device with an improved operation speed.A storage device 10 comprises: a word line 20; a bit line 30; a phase change layer 40 arranged between the word line 20 and the bit line 30 and being possible to reversibly mak...
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JP7194485B2 |
A method is presented for forming a semiconductor device. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form a plurality of trenches for receiving a first conducting ma...
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JP2022189117A |
To optimize current passed to a resistance change element.According to an embodiment, in a non-volatile semiconductor storage device, a cell block comprises a plurality of memory cells and a selection transistor. The plurality of memory ...
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JP2022189331A |
To provide a storage device capable of operating on a lower current than ever before.A storage device 10 comprises a phase change layer 40 containing tellurium and a diffusion layer 50 arranged in a position adjacent to the phase change ...
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JP2022552906A |
An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stack of materials. The material of the stack includes one or more chalcogenide materials. Metal oxid...
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