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WO/2007/023569A1 |
A nonvolatile semiconductor storage device includes: a common electrode (38); a resistance storage layer (42) formed on the common electrode (38) in such a way that it is switched between a high resistance state and a low resistance stat...
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WO/2007/021913A1 |
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device (301) . The preferably cone-like shaped bottom electrode (308) ensures that the thickness of the insulating material (312) at th...
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WO/2007/020832A1 |
[PROBLEMS] To provide a switching device reversibly and repetitively exhibiting two greatly different stable resistive characteristics and applicable to a highly-integrated nonvolatile memory. [MEANS FOR SOLVING PROBLEMS] A switching dev...
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WO/2007/018026A1 |
A variable resistor element, which comprises a first electrode, a second electrode and a variable resistor that exists in an area held between the first electrode and the second electrode and is changed in electric resistance when a volt...
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WO/2007/016169A1 |
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode (12) and a chalcogenide comprising phase change material layer (18) over the first electrode. A metal -chalcogenid...
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WO/2007/010746A1 |
Disclosed is a semiconductor storage comprising a variable resistor element obtained by arranging a variable resistive body between a first electrode and a second electrode. The electrical resistance of the variable resistor element is v...
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WO/2007/007606A1 |
In a variable resistance device having a variable resistive element between first and second electrodes and changing its electrical resistance when a voltage pulse is applied between the first and the second electrode, its data retention...
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WO/2006/132813A1 |
A memory device (100) , such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass (18) in contact with a metal-chalcogenide (20) such as tin selenide and methods of forming such a memory deviceare d...
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WO/2006/132045A1 |
It is possible to provide a nonvolatile storage element capable of reducing transient current during information write and erase and reducing the current consumption and a fabrication method of the nonvolatile storage element. A nonvolat...
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WO/2006/130800A2 |
A nonvolatile memory cell is provided, the cell comprising a transistor in series with resistance- switching material, which can be switched between at least two stable resistance states, for example a high-resistance state and a low-res...
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WO/2006/124153A1 |
A memory may include a phase change memory material having an electrode including a material that is a conductive oxide or that forms a conductive oxide.
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WO/2006/121473A1 |
A memory cell includes a phase change material (PCM) element that stores an information bit. A heating element external to the PCM element changes the information bit. A cooling element increases the speed of the information bit change. ...
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WO/2006/117063A1 |
A phase change memory cell is disclosed. The phase change memory cell (54) includes a first thin film spacer (58) and a second thin film spacer (60). The first thin film spacer defines a sub- lithographic dimension and is electrically co...
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WO/2006/115208A1 |
A first electrode layer includes first electrode wires (W1, W2) extending parallel. A state change layer is formed on the first electrode layer and includes state change bodies (60-11, 60-12, 60-21, 60-22) each exhibiting a diode charact...
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WO/2006/108541A1 |
A memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern ...
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WO/2006/109622A1 |
Disclosed is an electrical device comprising a first terminal (1), a second terminal (3) and a resistance variable thin film (2). The resistance variable thin film (2) is connected between the first terminal (1) and the second terminal (...
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WO/2006/110518A2 |
A phase change memory is formed of two vertically spaced layers (18, 34) of phase change material. An intervening dielectric (20) spaces the layers from one another along a substantial portion of their lateral extent. An opening (28) is ...
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WO/2006/104824A2 |
The present memory device (130) include first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138), and an active layer (136) between the first and second electrodes (132, 138) and in...
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WO/2006/099158A2 |
The present memory device includes first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138), and an active layer (136) between the passive layer (134) and the second electrode (138)...
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WO/2006/094867A1 |
The object to develop a nonvolatile resistively switching memory system that can be manufactured on the basis of CMOS technology is solved by the present invention a method for manufacturing an electrolyte material layer with a chalcogen...
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WO/2006/091480A1 |
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a lay...
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WO/2006/086248A1 |
The present memory device (80) includes a first electrode (82), a passive layer (84) on and in contact with the first electrode (82), the passive layer (84) including copper sulfide, a barrier layer (86) on and in contact with the passiv...
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WO/2006/084856A1 |
A memory cell device includes a first electrode, a heater adjacent the first electrode, phase-change material adjacent the heater, a second electrode adjacent the phase-change material, and isolation material adjacent the phase-change ma...
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WO/2006/084857A1 |
A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material ad...
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WO/2006/082008A1 |
The present invention includes a phase-change memory cell device and method that includes a memory cell, a selection device, a contact, and a sublithographic pillar. The contact is coupled to the selection device. The phase-change pillar...
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WO/2006/079952A1 |
A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure (210...
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WO/2006/077747A1 |
A nonvolatile semiconductor storage device capable of controlling the bidirectional currents and suppressing the parasitic currents flowing in non-selected memory cells in a cross-point array arrangement having memory cells each comprisi...
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WO/2006/078505A2 |
The invention provides for a nonvolatile memory cell comprising a dielectric material (28) in series with a phase change material (30), such as a chalcogenide Phase change is achieved in chalcogenide memories by thermal means Concentrati...
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WO/2006/075574A1 |
There are provided a resistance change element having an excellent heat resistance for suppressing degrading of resistance change characteristic upon temperature increase as compared to a conventional element and a manufacturing method o...
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WO/2006/072842A1 |
A thermally programmable memory has a programmable element (20) of a thermally programmable resistance preferably of phase change material, material and a blown antifuse (80) located adjacent to the programmable material. Such a blown an...
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WO/2006/069933A1 |
Both a chalcogenide select device (24, 120) and a chalcogenide memory element (40, 130) are formed within vias within dielectrics (18, 22). As a result, the chalcogenides is effectively trapped within the vias and no glue or adhesion lay...
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WO/2006/059313A2 |
A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first e...
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WO/2006/051996A1 |
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as...
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WO/2006/051645A1 |
An information recording medium exhibiting high recording sensitivity at the time of recording information and excellent recursive rewrite performance. In the information recording medium (15) at least comprising a recording layer (104) ...
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WO/2006/053163A2 |
A method of fabricating an electronic structure by providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer (102), providing first and second openings (104, 106) through the dielectric layer (100),...
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WO/2006/052394A1 |
A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material (21) over a substrate (10), depositing an insulating layer (20)...
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WO/2006/049762A1 |
A method for forming a metal-insulator-metal device (24, 124, 224, 424) includes imprinting at least one first layer (620) to form a first depression (636), removing a portion of at least one second layer (610) through the first depressi...
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WO/2006/049760A1 |
A metal-insulator-metal device (24, 124, 224, 424) includes a layer (610) having a major dimensional surface. The layer (610) has a first metal portion (452) having a first boundary, a second metal portion (454) having a second boundary ...
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WO/2006/035325A1 |
The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a s...
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WO/2006/034946A1 |
The aim of the invention is to provide a non-volatile semiconductor memory with conductive bridging RAM (CBRAM) memory locations, in which a chemically inert barrier layer is present between the Ag-doped GeSe layer and the Ag top electro...
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WO/2006/034953A1 |
An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical...
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WO/2006/029228A2 |
A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and an electrolytic tunnel barrier that is an electrolyte to oxygen and promotes...
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WO/2006/028117A1 |
There is provided a resistance change element having configuration different from the conventional element and having an excellent resistance change characteristic. The resistance change element has at least two state having different el...
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WO/2006/014249A2 |
A method of forming a metal chalcogenide. A metal is provided and exposed to a chalcogen plasma to form the metal chalcogenide.
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WO/2006/009218A1 |
A ferroelectric layer (104) is sandwiched by a lower electrode layer (103) and an upper electrode (105), and a prescribed voltage (DC, pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the ...
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WO/2006/003620A1 |
The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material...
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WO/2006/001942A2 |
A two-terminal electronic isolation device (10) has an anode (20), a cathode (30), an integral tunnel junction (50), and a current-injection layer (40). The current-injection layer (40) comprises a silicon-rich oxide.
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WO/2005/124788A2 |
A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, ...
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WO/2005/112118A1 |
Chalcogenide materials have a problem that it exfoliates easily during fabrication process of a phase change memory because of its low adhesion to a high melting point metal or a silicon oxide film. Chalcogenide materials also have a pro...
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WO2004081617B1 |
The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage...
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